TIP41/41A/41B/41C ®

TIP41/TIP41A/TIP41B/TIP41C Pb
Pb Free Plating Product
NPN Silicon Epitaxial Power Transistor

9.90±0.20 0.
20 4.50±0.20
60
±

φ 3. 1.30±0.20
FEATURES:
* Medium Power Linear Switching Applications

6.50±0.20
* Complement to TIP42/TIP42A/TIP42B/TIP42C

15.70±0.20

2.80±0.20

9.19±0.20
COLLECTOR
2
2.40±0.20
1.27±0.20
BASE
13.08±0.20

3.02±0.20
1 1.52±0.20

3 3
EMITTER 1. BASE 12 0.80±0.20
2. COLLECTOR 2.54typ
3. EMITTER TO-220C 2.54typ 0.50±0.20
Package Dimension Dimensions in Millimeters

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol Parameter TIP41 TIP41A TIP41B TIP41C Units
VCBO Collector-Base Voltage 40 60 80 100 V
VCEO Collector-Emitter Voltage 40 60 80 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 6 A
PC Collector Power Dissipation 2 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

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© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 TIP41/41A/41B/41C ®

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT
TIP41 40
TIP41A 60
Collector-base breakdown voltage IC=1mA, I E=0 V
TIP41B V(BR)CBO 80
TIP41C 100
TIP41 40
TIP41A 60
Collector-emitter breakdown voltage V(BR)CEO IC=30mA, I B=0 V
TIP41B 80
TIP41C 100
Emitter-base breakdown voltage V(BR)EBO IE= 1mA, I C=0 5 V
TIP41 VCB=40V, I E=0
TIP41A VCB=60V, I E=0
Collector cut-off current ICBO 0.4 mA
TIP41B VCB=80V, I E=0
TIP41C VCB=100V, I E =0

TIP41/41A VCE=30V, I B=0

Collector cut-off current ICEO 0.7 mA
TIP41B/41C VCE=60V, I B=0

Emitter cut-off current IEBO VEB=5V, I C=0 1 mA

hFE(1) VCE=4V, I C=0.3A 30
DC current gain
hFE(2) VCE=4V, I C=3A 15 75

Collector-emitter saturation voltage VCE (sat) IC=6A, IB =0.6A 1.5 V

Base-emitter voltage VBE(on) VCE=4V, IC =6A 2 V

VCE=10V, IC =0.5A
Transition Frequency fT 3 MHz
f = 1MHz

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© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/