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    Fabrication Process: Bil - Cross Sectioning Process Step

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    MUHAMMAD ROSMAIDIE BIN ROSLAN
    The document describes the fabrication process for manufacturing semiconductor devices. It involves 18 main steps: 1) Wafer cleaning and preparation, 2) Thermal oxidation to grow a silicon dioxide layer, 3) Photolithography and etching to pattern the silicon dioxide, 4) Diffusion processes to introduce dopants into the silicon substrate, 5) Repeating steps 2 through 4 for multiple layers, 6) Depositing a metal layer and 7) Final photolithography and etching steps to pattern the metal contacts. The process utilizes techniques such as thermal oxidation, photolithography, diffusion, deposition, and wet and dry etching to fabricate transistors, diodes and other devices on the silicon wafer.

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    Fabrication Process: Bil - Cross Sectioning Process Step

    Uploaded by

    MUHAMMAD ROSMAIDIE BIN ROSLAN
    15 views6 pages
    The document describes the fabrication process for manufacturing semiconductor devices. It involves 18 main steps: 1) Wafer cleaning and preparation, 2) Thermal oxidation to grow a silicon dioxide layer, 3) Photolithography and etching to pattern the silicon dioxide, 4) Diffusion processes to introduce dopants into the silicon substrate, 5) Repeating steps 2 through 4 for multiple layers, 6) Depositing a metal layer and 7) Final photolithography and etching steps to pattern the metal contacts. The process utilizes techniques such as thermal oxidation, photolithography, diffusion, deposition, and wet and dry etching to fabricate transistors, diodes and other devices on the silicon wafer.

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    Assignment Wafer Final

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    The document describes the fabrication process for manufacturing semiconductor devices. It involves 18 main steps: 1) Wafer cleaning and preparation, 2) Thermal oxidation to grow a silicon dioxide layer, 3) Photolithography and etching to pattern the silicon dioxide, 4) Diffusion processes to introduce dopants into the silicon substrate, 5) Repeating steps 2 through 4 for multiple layers, 6) Depositing a metal layer and 7) Final photolithography and etching steps to pattern the metal contacts. The process utilizes techniques such as thermal oxidation, photolithography, diffusion, deposition, and wet and dry etching to fabricate transistors, diodes and other devices on the silicon wafer.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as docx, pdf, or txt
    15 views6 pages

    Fabrication Process: Bil - Cross Sectioning Process Step

    Uploaded by

    MUHAMMAD ROSMAIDIE BIN ROSLAN
    The document describes the fabrication process for manufacturing semiconductor devices. It involves 18 main steps: 1) Wafer cleaning and preparation, 2) Thermal oxidation to grow a silicon dioxide layer, 3) Photolithography and etching to pattern the silicon dioxide, 4) Diffusion processes to introduce dopants into the silicon substrate, 5) Repeating steps 2 through 4 for multiple layers, 6) Depositing a metal layer and 7) Final photolithography and etching steps to pattern the metal contacts. The process utilizes techniques such as thermal oxidation, photolithography, diffusion, deposition, and wet and dry etching to fabricate transistors, diodes and other devices on the silicon wafer.

    Copyright:

    © All Rights Reserved
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    of 6

    1

    FABRICATION PROCESS

    Bil Cross sectioning Process step


    .
    1. Prepare and cleaning process
     Prepare the p-type wafer.
     Do the wafer cleaning process
    (BOE).
    P-type  Cleaning involves removing
    particles, organics and metals
    from wafer surfaces.
    2. Oxidation process
     Growth the silicon dioxide (SiO2)
    layer using wet oxidation.
     The thickness > 3000 A

    3. Photolithography process
     Photoresist coating
    - Apply the photoresist layer
    on the wafer
     Alignment and exposes
    - Align the mask and expose
    with UV-light.

    4. Development process
     Development is process to
    remove unwanted photoresist
    layer.

    5. Etching process
     The process to removes
    unwanted silicon dioxide.
     This process using wet etching
    (BOE).

    6. N-type diffusion process


     The process to underneath the
    n-type dopant like boron into
    silicon substrate.

    P – type Photoresist
    N – type Resistor
    SiO2 Transistor
    Mask Diodes
    2
    FABRICATION PROCESS
    7. Etching process
     The process to removes all
    silicon dioxide from the wafer
    surfaces.
     This process using wet etching

    8. Oxidation process
     Repeat step oxidation before
    this.
     Growth the silicon dioxide (SiO2)
    layer using wet oxidation.
     The thickness > 3000 A

    9. Photolithography process
     Photoresist coating
    - Apply the photoresist layer
    on the wafer
     Alignment and exposes
    - Align the mask and expose
    with UV-light.

    10. Development process


     Development is process to
    remove unwanted photoresist
    layer.

    11. Etching process


     The process to removes
    unwanted silicon dioxide.
     This process using wet etching
    (BOE).

    12. P-type diffusion process


     The process to underneath the
    p-type dopant like phosphorus
    into silicon substrate.

    P – type Photoresist
    N – type Resistor
    SiO2 Transistor
    Mask Diodes
    3
    FABRICATION PROCESS
    13. Etching process
     The process to removes all silicon
    dioxide from the wafer surfaces.
     This process using wet etching
    (BOE).

    14. Oxidation process


     Growth the silicon dioxide (SiO2)
    layer using wet oxidation.
     The thickness > 3000 A

    15. Photolithography process


     Photoresist coating
    - Apply the photoresist layer
    on the wafer
     Alignment and exposes
    - Align the mask and expose
    with UV-light.

    16. Development process


     Development is process to
    remove unwanted photoresist
    layer.

    17. Etching process


     The process to removes
    unwanted silicon dioxide layer.
     This process using wet etching
    (BOE).

    18. Emitter diffusion process


     The process to underneath the p-
    type dopant like aluminium into
    silicon substrate.

    P – type Photoresist
    N – type Resistor
    SiO2 Transistor
    Mask Diodes
    4
    FABRICATION PROCESS
    19. Etching process
     The process to removes all silicon
    dioxide from the wafer surfaces.
     This process using wet etching
    (BOE)

    20. Oxidation process


     Growth the silicon dioxide (SiO2)
    layer using wet oxidation.
     The thickness > 3000 A

    21. Photolithography process


     Photoresist coating
    - Apply the photoresist layer
    on the wafer
     Alignment and exposes
    - Align the mask and expose
    with UV-light.

    22. Development process


     Development is process to
    remove unwanted photoresist
    layer.

    23 Etching process
    .  The process to removes
    unwanted silicon dioxide.
     This process using wet
    etching (BOE).

    P – type Photoresist
    N – type Resistor
    SiO2 Transistor
    Mask Diodes
    5
    FABRICATION PROCESS
    24 Etching process
    .  The process to removes all
    photoresist.
     This process using acetone

    25 Deposition process
    .  Process that deposit
    aluminium metal thin film on
    the wafer surface.

    26 Photolithography process
    .  Photoresist coating
    - Apply the photoresist
    layer on the wafer
     Alignment and exposes
    - Align the mask and
    expose with UV-light

    27 Development process
    .  Development is process to
    remove unwanted
    photoresist layer.

    28 Etching process
    .  The process to removes
    unwanted silicon dioxide.
     This process using aluminium
    etch.

    29 Etching process
    .  The process to removes all
    unwanted photoresist layer.
     This process using acetone.

    # Process finish.

    P – type Photoresist
    N – type Resistor
    SiO2 Transistor
    Mask Diodes
    6
    FABRICATION PROCESS

    P – type Photoresist
    N – type Resistor
    SiO2 Transistor
    Mask Diodes

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