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Indeks Bias Batio3
Adv. Optical Mater. 2020, 8, 2001249 2001249 (1 of 23) © 2020 The Authors. Published by Wiley-VCH GmbH
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Figure 1. BaTiO3 films and resonant nanostructures for photonics. Doped films for light generation and nonlinear modification of BaTiO3 optical
properties (Section 2.6). Thin films of BaTiO3 grown by top-down methods for integrated electrooptic modulators (Section 3). BaTiO3 nanoparticles
and nanowires are utilized for nonlinear optics and biophotonics; hybrid BaTiO3/plasmonic nanoparticles employed for enhanced optical nonlinearities
(Section 4.1). Photonic metamaterials made from: BaTiO3 arrays of nanodisks, BaTiO3 nanoparticle films and metallic gratings or nanoparticles and
nanowires embedded in BaTiO3 matrix (Section 4.2). Photonic crystals such as woodpile 3D structures are used for nonlinear optics (Section 4.3). The
interaction length L is presented for every type of structure.
of BaTiO3 with different types of dopants and the THz response of this high permittivity ceramic.[18] They produced the syn-
is presented in Sections 2.6 and 2.7, respectively. In part 3, inte- thetic crystal after doping TiO2 with BaO, which improved
grated electrooptic modulators of BaTiO3 thin films are pre- the permittivity of TiO2 (εr ≈ 80) by more than ten times by
sented. Special emphasis is given in the performance of the (εr > 1000). BaTiO3 has a ferroelectric state at room tempera-
devices and the intricacies related to the film growth of BaTiO3 ture, which exist up to the Curie temperature (TC). Until the
via top-down methods. In part 4, the photonic applications mid-40s, ferroelectricity was considered to be a property associ-
related with nanostructured BaTiO3 in the form of nanoparti- ated with hydrogen bonded media. The study of ferroelectricity
cles (Section 4.1) and in the form of nanostructured thin films by Von Hippel (USA) also included ceramics such as BaTiO3
such as metasurfaces (Section 4.2) and photonic crystals (PhCs) in the class of materials with ferroelectric properties.[19] The
(Section 4.3) are presented. Several fields of research employ spontaneous polarization in ferroelectric materials results to a
BaTiO3 nanostructures such as biophotonics or nonlinear noncentrosymmetric (acentric) unit cell. For temperature below
optics and electrooptics. Figure 1 captures the main schemes the Curie point, namely below TC = 120 °C for bulk BaTiO3
where BaTiO3 nanostructures and films are utilized up with the crystal, the unit cell possesses a tetragonal (P4mm) symmetry
corresponding interaction length, L. Last, an overview of var- and thereby is noncentrosymmetric.[20]
ious applications that may benefit from this enabling material BaTiO3 belongs to the class of perovskites, similar to the
platform is presented. mineral CaTiO3, with the general formula of ABX3. Sites A and
B are filled by metals, while the X site is occupied by a nonme-
tallic element such as oxygen, forming the ABO3 structure. For
2. Physical Properties of BaTiO3 BaTiO3, the Ba+2 cations are located on the A-sites and Ti+4 on
the B-sites. The relative position of each ion within a single
2.1. Structural Properties of BaTiO3 unit cell is schematically presented in Figure 2, with eight Ba+2
being on the corners at (0 0 0); (0 0 1); (0 1 0); (1 0 0); (1 0 1);
Since the theoretical prediction of BaTiO3 in 1926, by Gold- (1 1 0); (0 1 1); (1 1 1). In cubic symmetry, the Ti+4 cations are
schmidt,[17] 15 years had to pass for the production of this positioned in the center at (½, ½, ½), while six O− anions are
crystal. It was 1941, when an American company filed the first at the center of the four faces at (0, ½, ½); (½, 0,½); (½, ½, 0).
patent of synthesizing BaTiO3 to protect the breakthrough Between Ba+2 and TiO3 group are formed ionic bonds, while
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700 °C.[41] As conventional integrated semiconductor circuits synthesize particles at low temperatures, while allowing for a
do not stand such high temperatures, sol–gel techniques with better control of the molecular precursors. The obtained pow-
lower processing temperatures down to room temperatures are ders are fine, with nanoparticles smaller than 50 nm, pure,
of high interest.[42] homogenous, and of good crystalline quality. Several methods
Sol–gel techniques are also limited to film thicknesses have been developed specifically for BaTiO3 nanoparticles syn-
of a few microns due to solvent evaporation and suffer from thesis: hydrothermal synthesis,[48] soft-chemistry with alkali or
biphasic amorphous crystalline structures as well as from an alkaline earth metal,[49] molten-salt synthesis methods,[50] or
unstable phase. To achieve thicker structures films of BaTiO3 high energy ball milling.[46]
are fabricated from solutions of nanoparticles. Either doctor
blading or spin-coating of nanoparticles with intermediate
drying have been utilized to develop ceramic capacitors with 2.3. Linear Optical Properties of BaTiO3
high dielectric constants.[43] Moreover, nanoparticles combined
with polymers improve the dielectric properties of the nano- BaTiO3 has a bandgap energy of ≈3.2 eV and does not sup-
composite polymer.[44,45] port low-energy excitons, thereby it is an optical dielectric
with a weakly dispersive, moderate refractive index ≈2.5 and
negligible optical losses at visible and near-infrared wave-
2.2.2. BaTiO3 Nanoparticle Fabrication lengths.[21] It is an adequate material platform to be utilized
both in photonic waveguides due to small optical losses, as
BaTiO3 can also be produced in a nanostructured form, uti- well as for resonant nanostructures such as photonic metas-
lised in a variety of applications. BaTiO3 nanoparticles have urfaces, photonic crystals, and other nanostructures, owing
been successfully synthesized by bottom-up wet chemistry to the large refractive index contrast in comparison to avail-
techniques that result in powders of nanoparticles. These able substrates like quartz. In the single crystal form, the
powders of BaTiO3 are used in electronic devices such as tetragonal phase results in birefringent optical properties.
multilayer ceramics with high crystallinity, purity and no The difference between the ordinary (no) and the extraor-
agglomerations. Initially, BaTiO3 powders were fabricated dinary (ne) refractive index stems from the different length
using solid-state methods, which involve the slow reaction of the c- and a-axis, where the a-axis has a lattice con-
of barium carbonate (BaCO3) and titanium oxide (TiO2) at stant a = b = 3.991 Å and c-axis has a constant of 4.035 Å.[20]
high temperatures of 1200 °C.[46] The powders produced by For light polarized along the a- or b- axis no is 2.40, while for
this method contain large particles with a wide size distri- light polarized along the c-axis, ne = 2.34 at 660 nm. The dif-
bution and many agglomerations. Salt-assisted spray pyrol- ference between no and ne tends to zero as the temperature of
ysis (SASP) is another method for powder synthesis, which the crystal approaches the Curie temperature, TC. Buse et al.[51]
requires fewer steps than the solid-state method and results have shown that there is a small influence on no upon heating
in nanoparticles with better homogeneity. The main step of toward TC, starting from room temperature. In contrast, the ne
SASP is the use of an ultrasonic aerosol atomizer to spray a becomes larger and approaches no for increasing temperatures.
precursor in a ceramic heated tube at 600–1000 °C. BaTiO3 The birefringence (ne – no) for different light wavelengths λ
nanoparticles with sizes from 30 to 360 nm can be fabri- and temperatures T is shown in Figure 3. The line fit of the
cated by SASP.[47] Wet chemistry methods make it possible to refractive index is described by the Sellmeier Equation[52]
Figure 3. Optical refractive index of BaTiO3. a) Birefringent optical response of BaTiO3 bulk crystal; refractive index measured across the visible
spectrum, for light polarized along (no) and perpendicular (ne) to the a-axis. b) Refractive index deviation (ne − no) between opposite polarizations
over temperature. (a,b) Adapted with permission.[51] Copyright 1993, Wiley-VCH. c) Refractive index of BaTiO3 thin films (sub-micrometer thickness)
produced by different fabrication methods. The refractive indices data are obtained from the references as indicated: molecular beam epitaxy (MBE),[53]
pulsed laser deposited (PLD),[54] amorphous barium titanate fabricated by a sol–gel technique,[56] polycrystalline (poly-C) and amorphous sputtered
thin films of 1–5 µm thickness,[59] nanoparticle films deposited by spin-coating of solvothermal synthesized particles of a diameter of 5 nm (circles)[57]
and hydrothermally grown (triangular) of a diameter of 50 nm.[58]
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Figure 4. Tunable optoelectronic properties of BaTiO3. a) Energy bandgap diagram of bulk BaTiO3. The p-orbitals of oxygen electrons form the valance
band (VB) of the crystal. Empty electron sites from titanium d-orbitals form the lowest energy of the conduction band. Oxygen vacancies contract the
bandgap energy, in contrast thinner films expand the bandgap energy. b) Absorption coefficient α spectra are modified as the crystal thickness; bulk
(green), 20 (blue), 11 (purple), and 8 nm (magenta) film, data obtained from ref. [61]. c) Electric resistivity over temperature of reduced BaTiO3−x with
different carrier concentration; more than ten orders of magnitude resistivity change is induced by the oxygen reduction from stoichiometric BaTiO3
to BaTiO3−x. Annotated is the carrier density of heavily reduced films. Data collected from ref. [67].
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pressure during deposition of BaTiO3 on the electrical and of the EO effect in BaTiO3 and define the constants and para
optical properties of BaTiO3 thin films grown by laser mole meters, which will be useful to compare the performance of the
cular-beam epitaxy. It was shown that the electrical conductivity EO devices presented in Section 3.
of the BaTiO3−x is improved upon reducing the oxygen pressure When an external electric field E is applied on as single
during deposition, where a metallic response was observed. The crystal, the index ellipsoid (ηij(0) + Δηij)xixj = 1 is deformed
electrical resistivity measured for the oxygen deficient BaTiO2.52 into:
thin films was found to be three orders of magnitude larger
than most common metals and the lowest resistivity value 1 1 2 1 1 2 1 1 2
among literature for BaTiO3, namely 6.0 × 10−5 Ω cm at room 2 + ∆ 2 x + 2 + ∆ 2 y 2 + ∆ 2 z
nx
n 1 ny
n 2 nz n 3
temperature. At the same time, the carrier density reached
1 1 1
values of 2 × 1022 cm−3 an order of magnitude lower than + 2∆ 2 yz + 2∆ 2 xz + 2∆ 2 xy = 1
n 4 n 5 n 6
metals. In addition, for every oxygen deficient BaTiO3−x film
was measured an optical absorption resonance. The absorption
spectral position blue shifts, while the linewidth becomes wider (2)
r11 r23 r13
with decreasing oxygen pressure.
r21 r22 r23 Ex
Kolodiazhnyi used another approach to create oxygen vacan-
1 3
r31 r32 r33 E
cies.[66] He used undoped BaTiO3 single bulk crystals, which where ∆ 2 = ∑rij E k =
n i j =1 r41 r42 r43 y
were reduced in temperatures higher than 900 °C in hydrogen Ez
r51 r52 r53
or nitrogen rich conditions. Such conditions improved the
r61 r62 r63
carrier concentration to levels higher than 1018 cm−3. Fol-
lowing this process, the insulator–metal transition was found
at a critical electron concentration of nc ≈ 1.6 × 1020 cm−3. In Here rij is the linear EO coefficient and r is the EO tensor.
a work followed 2 years later by Kolodiazhnyi et al.[67] they Provided the crystal symmetry, several elements of the EO
tried to answer the question if metallic BaTiO3−x could retain tensor may have the same or opposite values, or even be zero.
ferroelectricity by identifying a series of low symmetry phase Specifically for BaTiO3 due to symmetry of the crystal we have
transitions in metallic BaTiO3−x that may support ferroelectric
phase. Since the hybridization between the titanium 3d states 0 0 r13
and the oxygen 2p states is essential for ferroelectricity,[68] they
0 0 r23
detect discontinuities in electrical resistivity over temperature 0 0 r33
rBaTiO3 = (3)
and claim an indirect evidence of the low-symmetry crystallo- 0 r42 0
graphic phase transitions in BaTiO3−x. In Figure 4c is presented r51 0 0
the temperature dependence of BaTiO3−x resistivity, for various
0 0 0
electron concentration n. At the same time, Hwang et al.[35]
explored the oxygen vacancy role on the optical properties over The crystallographic point group P4mm of BaTiO3 can
mid-IR light. They observed that the structural phase transi- explain the zero elements, while it is also r13 = r23 and r42 = r51.
tions had a direct impact on the infrared response. Metallic The Pockels tensor components[69] are given in Table 1.
ground state was confirmed by the Drude-type low-frequency In Table 1, are presented the EO tensor components of
optical reflectance, while the mid-infrared absorption band of BaTiO3 for clamped and unclamped crystals. The mechanical
BaTiO3−x appears and grows with an increase in the oxygen constraints on the crystal affect greatly the EO response. If
vacancy concentration. BaTiO3 is unclamped, an electric field will induce a deforma-
tion by the converse piezoelectric effect. In turn, a modification
of the refractive index is caused due to the photoelastic effect.
2.4. Electrooptic Effect in BaTiO3 As a result, the electrooptic effect measured for unstrained
crystals is called the primary effect, while the response due to
The strong electrooptic response of BaTiO3 makes it a prom- piezoelectricity and photoelasticity is then named the secondary
ising material platform for EO applications. Bulk BaTiO3 has effect.[70] The observed effect in a free crystal is the sum of the
the largest Pockels coefficient reported up to date, which is primary and secondary effects. Thereby, the EO effect can be
measured to be r42 = 1300 pm V−1 in the unclamped (zero-stress described through the following equation
case) and r42 = 730 pm V−1 in the clamped case, see Table 1.
In this part, we review the essential effects associated with the 1
∆ 2 = rijkTE k + quadratic terms = rijks + ( pijlm dlmk )E k + ··· (4)
origin of this strong response, identify the microscopic origin n i
Table 1. BaTiO3 electrooptic tensor coefficients. where T and s indicate constant stress and strain, while p and
d are the photoelastic and piezoelectric tensors, respectively.[71]
EO coefficient Unclamped [pm V−1] Clamped [pm V−1] In Equation (4) rijkT and rijks are the free (unclamped) and clamped
r13 = r23 10.2 ± 0.6 8 ± 2 EO coefficients, respectively, while the product pijlmdlmk is the
r33 105 ± 10 40.6 ± 2.5
contribution to the electrooptic effect from the photoelastic
effect. Even though in several reports an effective coefficient
r42 = r51 1300 ± 100 730 ± 100
is used to describe the phenomenon, the separate coefficients
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provide an overview of the effects taking place in parallel. Esti- Table 2. Optoelectronic characteristics of ABO3-type crystals. Refrac-
mations based on several physical effects suggest a weak reduc- tive index (at 633 nm); electrooptic coefficient rij (clamped case, i.e.,
constant strain); Curie transition temperature TC; dielectric constant εr
tion of the EO response in the infrared wavelength region and (orthogonal to polarization direction) for bulk ferroelectric oxides. The
different electrooptic response for clamped and unclamped values are measured at room temperature.
crystals.[69,72] For the clamped case (constant strain), the elec-
trooptic effect is two times smaller in comparison to the Material Refractive index r [pm V−1] TC [°C] εr Reference
unclamped case (constant stress), where photoelastic contribu-
LiNbO3 2.29 r33 = 31.8 1195 84 [73,74]
tions add to the generalized electrooptic effect, while the elastic
deformations are induced by the piezo-electric effect, which dis- BaTiO3 2.37 r42 = 730 120 4500 [69,74]
where rijko and rijka are associated to the optic and acoustic lattice Chen et al.[82] suggested a model for predicting the clamped
vibrations. The contributions are frequency dependent. For EO coefficients of the crystals based on the relative displace-
more information on the EO effect, see Günter[71] from where ments of the central metal ion (B) to oxygen in the BO6 oxygen
we adapted the annotations. The electronic contribution to the octahedron. The aforementioned displacements modify the
electrooptic coefficient rijke can be determined from the nonlinear wave functions of the electrons in the crystal through electron–
optical susceptibilities dkji obtained, e.g., by second-harmonic phonon coupling, which then induces a change of the refractive
generation (SHG) experiments by using the following equation index. The electrooptic effect of BaTiO3 is the highest recorded
in bulk materials, as presented in Table 2 over several noncen-
4 trosymmetric crystals, with the perovskite structure ABO3.
rijke = dkji (6)
ni2 n 2j From Table 2 we can conclude that the optical refractive index
is not associated with the strength of the EO effect. Neither the
where ni2 and n 2j , and rijke are the refractive indices and elec- transition Curie temperature can be an index of the strength of
trooptic coefficients for the fundamental frequency. More the EO effect. In contrast, the large dielectric constant is asso-
details on the physics of second-harmonic generation will ciated with the strength of the EO effect, for an ABO3 type of
follow in the next Section. crystal. The larger the polarizability of the crystal, the longer
From the index ellipsoid, an effective coefficient sufficient the displacement of B site, as a result there is space for larger
can be derived to describe the linear electrooptic effect, such as motion and thereby stronger modification of the refractive index.
Normally, bulk crystals have stronger electrooptic response
1 than thin films, which have process-dependent properties due
∆n (E ) = − reff n 3E (7)
2 to deviation in stoichiometry, the presence of defects, rough-
ness, grain boundaries, strain gradients, and domain struc-
For traveling-wave EO phase modulators, the half-wave tures. Thereby, it is clear that for reliable EO devices, we have to
voltage Vπ defines, for a specific geometry, the voltage needed understand how the processing methods affect the performance
to induce a π phase shift for the transverse configuration of each material system. In part 3, the efforts and studies to
produce integrated EO devices out of nanofilms with EO coef-
λd ficient comparable to bulk crystals will be reviewed.
Vπ = (8)
Lrn 3
Here, λ is the wavelength, d is the electrodes distance, L 2.5. Nonlinear Response from BaTiO3
is the total interaction length, r is the EO coefficient, and n is
the refractive index. From Equation 8 it stems that low-voltage 2.5.1. Second-Harmonic Generation
modulators may have either large EO coefficient or long inter-
action lengths. Harmonic generation is a nonlinear optical process that
After presenting the mathematical formalism and the phys- appears when the material is exposed to an external field with
ical origin of the EO processes, we overview the advances of the a strength comparable to or higher than the atomic electric
field over the last years. The first theoretical studies on the elec- e
field E atom = , where e is the charge of an electron and
trooptic response crystals of perovskite structure were based 4πε 0 a0
on phenomenological and semiempirical methods. Kurtz and ao is the Bohr radius of a hydrogen atom.[83] Thus, the bound
Robinson[80] used an anharmonic oscillator model, while Levine electrons in the material have an anharmonic response and the
employed a bond charge model.[81] Furthermore, Wemple and atomic dipole moments emit higher frequency secondary radia-
DiDomenico Jr.[52,73] had managed to calculate the EO response tion. This response can be modeled by introducing a nonlinear
through the changes in the bandgap induced by the lattice polarization in the Maxwell equation, which contains additional
polarization and identified the origin of this response due to nonlinear terms and can be expressed as a series driving elec-
the distortion of the BO6 oxygen octahedra. Similar to that, tric field powers (Equation (9))[83]
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0 0 0 0 d15 0
d = 0 0 0 d15 0 0
(11)
d31 d31 d33 0 0 0
where χ ijk are the tensor components of χ(2), a third rank tensor
(2)
KNbO3 Orthorombic Bmm2 3.95 d33 = −19.6, 0.032 [90,92]
d32 = 11.3, (846 nm)
with 27 components, and Ej,k are the driving electric field vector
d31 = −12.9
components. However, due to symmetry constraints, the values
@ 1064 nm
of χ ijk are not independent. First, if the SHG occurs at optical fre-
(2)
quencies below the resonant frequency of the material, the GaAs Cubic 1.42 d14 = 209.5 70 (1060 nm) [90,93]
4 3m
@ 1058 nm
second order susceptibility is frequency independent. Thus, in
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of extremely high EO coefficients. While GaAs and other semi- is given by an extended Beer-Lambert expression dz dI = − αI − βI 2,
conductors have high second order susceptibilities, their EO where α is the linear absorption coefficient. The two-photon
coefficients are much lower (around 1.5 pm V−1) and further- absorption coefficient β is proportional to the imaginary part
more have the disadvantage of being conductive when too high of χ(3),[96,97] which is not vanishing for centrosymmetric mate-
electric fields are applied for EO switching. Thus, BaTiO3 offers rials. Since two-photon fluorescence is not a coherent process,
a convenient compromise for multifunctionality. phase matching conditions are not required. Fluorescence from
The SHG response depends strongly on the driving elec- BaTiO3 after doping with transition metals, rare earth ions or
tric field polarization. For BaTiO3, the highest χ(2) component mixed with plasmonic metals demonstrates such response. The
is d15, thereby an electric field polarized along this direction optical properties of doped BaTiO3 are presented in Section 2.6.
maximizes the SHG. Using the Voigt notation, d15 corresponds
to dxxz, which is not parallel to any BaTiO3 crystal axis. Thus,
the highest SHG from a BaTiO3 slab, illuminated by a nor- 2.5.3. Kerr Nonlinearity
mally incident p-polarized beam can be obtained when the
c-axis (assumed parallel to the z-axis) is in plane normal to the The third order susceptibility tensor gives rise to another
incidence. Additionally, the incident laser intensity (W cm2) is important nonlinear effect, which is the intensity dependent
also an essential parameter for inducing a nonlinear response. refractive index, also known as the Kerr nonlinearity. The
The SHG intensity scales with the square of the laser inten- dependence of the refractive index on the intensity I is given by
sity because SHG is a second order phenomenon. Also, the
focusing setting of the incident laser beam impacts the SHG n = n0 + n2I (12)
emission, with the strongest signal coming from the focus
point. Thus SHG can be used for confocal imaging. where n2 is known as the nonlinear refractive index and is
In bulk crystals, phase matching is also required for efficient related directly to χ(3) by n2 = 12π 2 χ (3) /n02 .
SHG, in addition to the correct orientation of the oscillating
driving electric field. Phase matching conditions are necessary
due to the dispersion of the refractive index. SHG is emitted 2.5.4. Nonlinear Response at the Nanoscale—The “Size” Effect
quasi-instantaneously along the path of the incident wave.
Hence, the total SHG from a sample is the interference of SHG BaTiO3 has been successfully fabricated in nanoparticle and
from all the points in the path of the incident wave. Because nanolayers form. Both these structures can be formed of
SHG propagates at a different velocity compared to the incident BaTiO3 grains with sizes as small as 20 nm. Thus, it is relevant
wave, this superposition leads to a high total SHG only when to understand how the nonlinear response changes in these
phase matching requirements are met and the incident and dimensions. As the nonlinear optical properties stem primarily
SHG waves are in phase. Thus, the total SHG from a sample from the crystal structure, understanding how the crystal struc-
depends strongly on the excitation wavelength and the length ture is affected at the nanoscale already gives valuable indica-
of the sample. To obtain maximum SHG intensity, the phase- tions about the nonlinear optical conversion efficiencies.
matching condition Δk = 2k(ω) − k(2ω) = 0 between the exci- First, the characteristic size of BaTiO3 nanostructures is much
tation and the emitted waves must be fulfilled. If this phase smaller than the coherence length of the material, which is typi-
matching condition is not satisfied, the total SHG is periodi- cally a few micrometers. Thus, fulfilling the phase-matching con-
cally cancelled along the sample due to destructive interference, dition is not an issue at this size scale. Therefore, in composite
with a period inversely proportional to Δk. In case of nanostruc- geometries, phase-matching conditions are relaxed, also named
tures with sizes much smaller than the excitation wavelength, random quasi-phase matching. Experiments have reported
the phase matching condition is relaxed.[83,95] random quasi-phase-matching in polycrystalline ferroelectrics and
in complex assemblies of BTO nanoparticles.[98] In comparison to
phase matching in single crystals, where the SHG intensity oscil-
2.5.2. Two-Photon Fluorescence lates along the sample, in composites with random quasi-phase
matching, such as disordered polycrystals, show a linear growth
Two-photon fluorescence appears after two photons with of the intensity with the thickness of the material and a broad-
the same energy are absorbed by a material, followed by the band acceptance bandwidth. For sample with nanoscale size,
emission of a single photon with lower energy. Although this the second order conversion efficiency can still depend on the
process also requires the quasi-simultaneous absorption of wavelength when χ(2) has a wavelength dependence, for instance
two photons, it is fundamentally different than SHG, because near the bandgap, or when optical resonances occurs.
it requires the existence of a real high energy state to which Next, the SHG does not exclusively appear from materials
the atom is excited (Figure 5b). Thus, the probability of two- with noncentrosymmetric crystal structure. At the nanoscale
photon absorption is very high for photons with energy higher the shape of the nanostructure breaks the inversion symmetry,
than the bandgap of the material. Furthermore, it also involves thus SHG appears due to the surface of the nanostructure and
the nonradiative decay from the high energy state to the fluo- if it has an asymmetric geometrical shape. Thus, SHG has
rescent excited state, before the fluorescent photon emission. been successfully detected in nanostructures such as nanopar-
This nonradiative decay introduces a time delay before the ticles and thin layers from centrosymmetric materials such as
fluorescence occurs, making fluorescence photons incoherent, metal,[99] where the presence of hotspots near the surface leads
as opposed to SHG. The rate of two-photon absorption rate to strong SHG conversion efficiencies.
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However, for dielectric nanostructures, SHG is more efficient refractive index and two-photon absorption, can be modified by
if the crystal structure is noncentrosymmetric. Consequently, combining BaTiO3 with metals to obtain composite layers,[114–118]
the behavior of the second order susceptibility χ(2) as sizes go to or by coating BaTiO3 nanoparticles with metallic seeds.[119]
the nanoscale has been addressed in several works. Theoretical The insertion of noble metals to BaTiO3 creates BaTiO3–metal
studies predict that ferroelectricity, which is linked to the pres- composites, where the Kerr nonlinearity is increased by the
ence of SHG, is present locally in colloidal quantum dot sized plasmonic resonance of metals which effectively enhances the
(below 5 nm) BaTiO3 nanoparticle under zero field.[100] This is electric field locally.[114,120–122]
confirmed in ensemble studies of concentrated nanoparticle As BaTiO3 is a bandgap insulator, photoluminescence
solutions,[101,102] powders of ball milled nanoparticles,[103] but also (PL) was detected at excitation wavelengths within the energy
on measurements performed on single nanoparticles.[101,104,105] bandgap ≈3.2 eV from BaTiO3 nanoparticles with sizes between
Kim et al.[105] demonstrated that the SHG polar measurements 80 and 100 nm. The nanoparticle size red shifts the maximum
from single BaTiO3 nanoparticles have a characteristic dipolar of PL intensity red shifts, which consists of contributions from
and quadrupolar shapes which is typical of bulk down to diame the surface states, where the crystal structure is distorted, and
ters of 30 nm. Several models are proposed to explain this tran- from self-trapped excitons.[123] It is possible to obtain photo
sition. Two of these models prescribe that the ferroelectricity luminescence with excitation wavelengths outside the bandgap
of the BaTiO3 nanoparticle is reduced due to the size, either by doping with oxygen vacancies, which leads to the additional
because the ferroelectricity decreases strongly with the volume formation of self-trapped excitons.[124] Visible photoluminescence
or because the surface effects overcome the bulk emission.[106–108] is also achieve using highly disordered states obtained with Mn
Other observation indicates that the presence of ferroelectricity doping[125] or in hollow nanofibers.[125]
at BaTiO3 nanoparticles smaller than 30 nm depends on using a The SHG conversion efficiency of BaTiO3 can also be opti-
fabrication method which results in strain at the nanocrystal sur- mized. For BaTiO3 films, in which the c-axis of the constituting
face.[103] The third model suggests that the BaTiO3 nanoparticles grains is not oriented in the same direction, periodic poling
are composed from a core with tetragonal crystal structure and applied close to the Curie temperature improve the SHG con-
a cubic or disordered shell region.[109] The thickness of the shell version efficiency by reorienting the grains in the same direc-
is hypothesized to be independent of the nanoparticle diameter, tion.[55] A modification of the actual value of the second order
because it appear due to crystal relaxation as the nanoparticle susceptibility is achieved when the first order susceptibility is
surface. Thus, as the nanoparticle diameter decreases below a modified, as the two quantities are connected by the Miller’s
certain threshold, the optical properties of the shell overcome the rule.[126] Doping can increase of the first order linear suscep-
core’s. However, for BaTiO3 nanoparticles bigger than 100 nm, a tibility, leading to a half of an order of magnitude increase of
study of the polarization SHG maps from single nanoparticles the second order susceptibility.[127] One order of magnitude
shows the contribution of the core to the total SHG signal is sig- increase of the second order susceptibility was obtained by
nificantly higher compared to the surface contribution.[110] A sim- combining doping with stress by growing BaTiO3 layers on
ilar model is suggested for BaTiO3 ceramic composites, where lattice mismatched substrate such as SrTiO3.[128] The combina-
the ferroelectric behavior is consistent with the presence of fer- tion of stress and Ce doping leads to an improvement of the c/a
roelectric grains and nonferroelectric grain boundaries, which ratio, which modifies the value of χ(2) strongly.
have a higher volume fraction as the grain size decreases.[111] Combining BaTiO3 with plasmonic materials, in particular at
Another work compares the SHG from BaTiO3 nanoparticles the nanoscale,[129,130] leads to an improved SHG conversion effi-
which claim cubic and tetragonal crystal structures from com- ciency. However this is due to the plasmonic resonance of the
mercial sources and synthesized in-house.[112] SHG was detected metallic nanoparticles and does not change the χ(2) of BaTiO3.
from all these nanoparticles, but STEM EELS measurements The same principle of exploiting a resonance to improve the
show variations of the crystal structure from each type. This vari- second order conversion efficiency is employed in BaTiO3 nano
ation indicates the presence of tetragonal and cubic phases with particles with Mie resonances,[131,132] where the SHG conversion
different ratios in the core of the nanoparticles and also hints efficiency normalized by the volume is two to three orders of
to the presence of surface reconstruction. These studies indicate magnitude higher in comparison to layers or bulk BaTiO3.[95]
that at least a core with tetragonal crystal structure is present in
BaTiO3 nanoparticles and the second order susceptibility values
are very similar to the bulk values. 2.6. Doping Effect in BaTiO3
In addition to SHG, BaTiO3 nanoparticles are also an effi-
cient source of higher harmonic generation. Measurements on The doping of BaTiO3 with several chemical elements is pos-
BaTiO3 in nanoparticles in glycol solution show that the non- sible, therefore offers unique opportunities to engineer the
linear refractive index, which is associated with the third order properties of the crystal in a range of applications. BaTiO3 upon
susceptibility, is enhanced by four orders of magnitude in com- doping may modify properties such as: Curie temperature,
parison to the bulk and normalized by the volume.[113] electric permittivity, grain size as well as the refractive index,
the electrooptic response and obtain light emission proper-
ties.[133–135] Both acceptor and donor-type additions in BaTiO3
2.5.5. Tunable Nonlinear Optical Properties of BaTiO3 have an impact on the quality of the crystal and the related
Nanoparticles and Nanowires (NWs) properties. Here, we will review the materials used to improve
photonic properties of BaTiO3 thin films.
The optical properties of BaTiO3, in particular the first order Whether a dopant ion is compatible with the host medium is
and third order susceptibilities, which is related to the nonlinear dependent on parameters like the site type, the compensation
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mechanism and the solid solubility limit.[136] Crystals well as a photoluminescence response in near-infrared. The Cr
with ABO3 structure (with Ba on the A site and Ti on the doping resulted in larger absorption over the visible region and
B site for BaTiO3) accept two types of dopants. The Ba2+ posi- three absorption bands at about 470, 575, and 610 nm. However,
tions can be substituted by ions of large ionic radii of valence3+ after cooling the sample at −200 °C and exposed to a 400 nm
and higher, while the Ti4+ sublattice are compatible dopant ions laser, four sharp lines appeared in the near infrared and several
with smaller ionic radii of valence 5+ and higher.[153,154] The additional weak emission lines. An important metal for doping
three-valent ions can substitute either the A-type or the B-type BaTiO3 is erbium, since Er3+ ions have optical fluorescent proper-
sites, where the ions substitute the Ba2+ sites act as donors, ties particularly useful in laser applications.[146–149] The work from
while the Ti4+ sites act as acceptors (e.g., Mn, Fe, Ni, or Cr). Block and Wessels[146] reported on Er-doped BaTiO3 thin films.
For the doping with rare earth ions, the BaTiO3 defect chem- The strong Er3+ intra-4f shell emission at 1550 nm was recorded
istry mainly depends on the lattice site where the ion is sub- at −257 and 21 °C, with linear dependence of the Er3+ lumines-
stituted.[155] All rare earth 3+ elements are larger than Ti4+ and cence intensity to the pump power and lifetimes of 8 ms. The
smaller than Ba2+. Therefore, the doping of BaTiO3 with rare OH complexes play a crucial role, as luminescence quenching
earths, result in the expansion of the lattice on the B-site and centers weaken the emission from the excited Er ions.[147] Zhang
the shrinkage on the A-site. During doping, BaTiO3 may turn et al. used the sol–gel method to produce Er-doped BaTiO3
into semiconducting or metallic state, however this is not yet crystalline films.[148] Optical pumping at 514 and 980 nm wave-
clear if it is dependent solely on the doping effect or the modi- lengths, led to strong photoluminescence signal at telecom band.
fication induced in crystal such as the grain size or oxygen Transient photoluminescence measurement showed that con-
reduction during the doping process.[156] The modification centration quenching occurs when the concentration of Er is
over the grain size mainly relies on the ionic radii mismatch >3.0 mol% with a lifetime of the order of few msec.
between the substituting and parent atoms. If the ionic radius Another rare earth ion dopant that has been extensively
of the doped atom is larger than that of the parent atom grain studied on the optoelectronic response of BaTiO3 is cerium (Ce).
size becomes larger and vice versa.[144] Xuan et al. studied the impact of Ce doping on BaTiO3.[127] Thin
We can recognize three main modifications in properties of films produced by pulsed laser deposition and show a tenfold
BaTiO3 after doping such as: bandgap/refractive index modifi- enhancement on the SHG signal produced by 1064 nm light
cation, enhancement of second or third order nonlinear optical illumination. This enhancement was explained by two factors,
properties, and photoluminescent response. In Table 4 is pre- first the linear susceptibility of doped films is 1.43 times larger
sented a list of dopants together with several properties accom- than undoped films, and second the lattice parameter ratio
panied with each doping element. c/a increases and spontaneous polarization in the direction
Fasasi et al. prepared barium titanate thin films doped of c-axis, and hence d33 has the largest enhancement. Further-
with zinc oxide (ZnO),[141] tungsten oxide (WO),[152] and gado- more, Liu et al.[145] reported on the impact of cerium over the
linium (Gd)[151] by pulsed laser ablation. They tested various electrooptic response of Ce-doped BaTiO3. Upon doping BaTiO3
doping concentrations. The films doped with ZnO and Gd with cerium the lattice constants are increased, because the Ce4+
remain tetragonal, while for WO samples remain cubic even has larger radius than the Ti4+. Thereby, authors deduced that
after postannealing. The transmittance of the aforementioned the cerium substitutes titanium, which result in larger spon-
doped films was strongly affected by postannealing conditions. taneous polarization, as well as lattice distortion. According to
The bandgap energy was modified by film thickness and the Didomenico and Wemple’s model[52] the electrooptic response is
amount of dopant added. They suggested that Gd in BaTiO3 proportional to the product of the spontaneous polarization and
modifies chemical properties of the films and generates a tran- the dielectric constant. Therefore, the electrooptic coefficients of
sition with bandgap energy of 4.35 eV. BaTiO3:Ce are 1.5 times larger than the undoped BaTiO3 crystal.
Transition metals such as chromium (Cr) was studied by Eden The thin films they produced by PLD method, possess an elec-
et al.[138] They have managed to replace titanium ions with chro- trooptic coefficient of 80 pm V−1 for Ce-doped BaTiO3 films and
mium and have recorded the blue-shift in the bandgap energy, as 50 pm V−1 for undoped BaTiO3 films.
Table 4. Doping elements for BaTiO3 modification. A list of the chemical elements used to dope BaTiO3, the growth method, the substitution site of
the ABO3 form, the phase of the produced crystals, and the photonic applications that are used.
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Figure 7. Electrooptic waveguides and plasmonic interferometers made from PLD and MOCVD BaTiO3 films. a) Schematic of the Mach–Zehnder
waveguide modulator, (oblique view and cross-section). b) Modulation depth (for a BaTiO3 crystalline film with the c-axis out of plane) versus frequency
(21 Vpp modulating square signal, 46 Vdc bias, 1550 nm). (a,b) Reproduced with permission.[174] Copyright 2002, AIP Publishing. c) Cross-sectional SEM
image of a polycrystalline film and d) AFM image of 1 µm thick polycrystalline BaTiO3 film on MgO, with a maximum height variation of 6.3 nm. The
rms roughness for the measured area is 0.9 nm. (c,d) Reproduced with permission.[175] Copyright 2003, The Optical Society. e) Schematic of a plasmonic
modulator based on interference of SPPs launched from a set of parallel slits milled into a planar silver film. The counter-propagating SPPs travel
along the Ag/BaTiO3 interface. The interference of these SPPs with the transmitted fields can be controlled by an applied voltage across the BaTiO3
layer, by means of EO modulation or domain switching. f) CCD image of a double-slit SPP interferometer array. Insets: Scanning electron micrograph
of slit pairs milled by focused ion beam in a chromium on silver layer. 50× image of devices with slit pitches varying from 1.5 to 1.98 µm showing the
transmitted intensity oscillation. (e,f) Reproduced with permission.[178] Copyright 2008, American Chemical Society.
either a dc or dc + ac voltage across the device electrodes. Films for the films, where the c-axis was out-of-plane and an effec-
had an effective dc electrooptic coefficient of reff = 50 ± 5 pm V−1 tive Pockels coefficient reff = 734 pm V−1 for the films where the
and reff = 18 ± 2 pm V−1 at 5 MHz. The reported EO coefficient c-axis was in-plane. The EO modulation was characterized up
is weaker by more than one order of magnitude in comparison to 1 MHz modulation speed, where no considerable reduction
to the EO response of bulk BaTiO3. of the modulation depth was recorded. The schematic of such
Petraru et al.[174] produced BaTiO3 films via pulsed laser devices and the measured modulation depth versus frequency
deposition on MgO substrates. They made Mach–Zehnder at 1550 nm is shown in Figure 7a,b.
optical waveguide EO modulators and tested how EO response In a follow up letter from the same group,[175] polycrystalline
changes for films with the c-axis oriented either in-plane or films of BaTiO3 were tested. Films of ≈1 µm thickness were
out-of-plane. They produced films of different orientation grown by PLD, similar to previous reports, however the depo-
by adjusting the energy of laser pulses of the PLD process sition temperature was ≈400 °C. They characterized the films
to either 1100 or 300 mJ pulse−1. The waveguides were of the with a prism-coupling technique and deduce the in-plane and
ridge type, with the BaTiO3 thickness to be 1 µm, the ridge step out-of-plane refractive indices, nTE = 2.316 and nTM = 2.301 of
50 nm, and the width 2 µm. The BaTiO3 waveguide propaga- the polycrystalline films at 633 nm. The films were birefrin-
tion losses were 2–3 dB cm−1. Electrodes of 3 mm length were gent, with a birefringence of 0.015 ± 0.002. The cross-sectional
deposited on each side of the waveguides. EO modulation has scanning electron microscopy (SEM) image (Figure 7d) of
been demonstrated with Vπ = 6.3 V at 632 nm wavelength and the film shows a dense structure without a columnar aspect,
Vπ = 9.5 V at 1550 nm wavelength for the samples with the thereby the relatively high birefringence was attributed to a
c-axis in-plane. For the c-axis oriented out-of-plane, they found preferential orientation of the crystallites. They also observed
a Vπ of 8 V at 632 nm wavelength and a Vπ of 15 V at 1550 nm. that the modulator exhibited hysteretic behavior when they
The typical bias dc voltage ranges from 50–60 V. It was shown measured the output intensity versus the applied voltage; i.e.,
that by increasing the dc bias, the EO coefficient also increased the scan with the voltage going up was shifted with respect to
due to the poling of the films, however an upper limit is set by the scan with the voltage going down. This indicates a ferroe-
the leakage current of the films. The theoretical estimations of lectric poling effect of the BaTiO3 during the measurements. In
the EO modulators suggest a Pockels coefficients r51 = 80 pm V−1 the same configuration of a Mach-Zehnder interferometer, the
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EO coefficient at the 1.5 µm wavelength was measured ≈22 pm bias. Since the intensity modulation data recorded for each
V−1. A square-wave voltage was applied to the modulator, and a device did not undergo the same change in nSPP, authors specu-
stable modulation in the frequency range of 1 Hz to 1 MHz was late that some change in index of this magnitude may appear
recorded. The measured half-wave voltage of the polycrystalline due to a-domain to c-domain switching in the active barium
EO modulator waveguides was Vπ ≈ 19 V at an applied electric titanate layer.
field of 9 V µm−1.
Later on, Tang et al.[176,177] on back-to-back publications
studied the EO response of polydomain films of BaTiO3. They 3.2. MBE Grown BaTiO3 EO Films
produced films of 570 nm thickness by MOCVD. The poly
domain texture corresponded to films with the c-axis oriented While MOCVD and PLD where the main fabrication methods
parallel and antiparallel of three main axis: <100>, <010>, to implement EO modulators based on BaTiO3 thin films in 90s
and <001>. The ferroelectric domains had dimensions of and 2000s, Abel et al. produced EO films out of molecular beam
50–500 nm, which was many times smaller than the operating epitaxial methods for first time.[179] They developed the direct
wavelength of 1542 nm. Authors assumed that some kind of growth of ferroelectric BaTiO3 films on silicon with EO coeffi-
averaging over several domains happened. In order to support cient of reff = 148 pm V−1. A year later, it was published the work
their hypothesis, they measured the bireference of the films by Xiong et al.[38] (Figure 8) where they also prepared via MBE
and the extracted values were lower than Δn < 0.005 for most thin films of BaTiO3 with EO coefficient of reff = 213 ± 49 pm V−1.
films, an order of magnitude smaller than bulk crystals. The The improvement on the EO coefficient from previous work,
EO modulators were based on a single mode strip-loaded wave- lies on the integration of the films in resonant waveguide
guide design. The waveguide was 4 µm wide and 125 nm thick, geometries (namely micro-racetrack optical resonators and
fabricated using standard plasma enhanced chemical vapor MZI waveguides). The false colored SEM image in Figure 8a
deposition and reactive ion etching processes. The coplanar shows the developed waveguides. A horizontal slot waveguide
electrodes had length and separation distance of 3.2 mm and is made after sandwiching the BaTiO3 in between two silicon
8 µm, respectively. The waveguide was aligned to the <110> layers, Figure 8b. In such configuration, the optical mode over-
crystallographic direction of the MgO substrate, with wave- laps with the BaTiO3 film. They produced an 80 nm BaTiO3
guide propagation losses (≈1 dB cm−1). The dc bias dependence film with MBE on silicon-on-insulator (SOI) substrate, where
of the effective ΕΟ coefficient increased from a zero-bias value
of 141 pm V−1 to a maximum of 162 pm V−1 at a bias of 10 V.
Upon stronger biasing fields, the EO response was decreasing.
The reorientation of ferroelectric domains is the responsible
mechanism for the bias dependence. Domains with polariza-
tion normal to the film plane rotate 90° into the film plane if
the total electric fields exceed the coercive field required for
such motion. The change in birefringence due to 90° domain
switching contributes to the effective electrooptic coefficient,
and is rapidly reversible due to strong elastic interaction with
the substrate. For zero dc bias, the authors could not excite
domain switching (below the coercive field, Ec < 1.6 MV m−1).
Further characterization at GHz frequencies of the EO modula-
tors shows a Vπ of 3.9 at a 2.0 V dc bias. The −3 dB electrical
bandwidth measured to be 3.7 GHz and the effective EO coef-
ficient calculated as 150 pm V−1 at 1561 nm wavelength.
Dicken et al. prepared thin films of BaTiO3 via PLD, to elec-
trically control the surface plasmon polariton (SPP) wavevector
(k-SPP) of a metal-dielectric plasmonic interferometer.[178] They
fabricated arrays of subwavelength interferometers from pairs
of parallel slits of silver on top of BaTiO3 thin films. Plasmon-
mediated transmission of incident light through the subwave-
length slits was modulated by an external voltage applied across
the barium titanate thin film, see Figure 7e,f. TM polarized Figure 8. Electrooptic waveguide modulators based on MBE grown films
laser light at 688 nm illuminated the array of nanoslits. The of BaTiO3. a) False-color scanning electron micrograph of an amorphous
slits pitch started at half micrometer and increases by 20 nm silicon waveguide (in blue) and the gold electrodes (in yellow). b) High-
for each device along a row. The observed intensity oscilla- resolution transmission electron micrograph of a cross sectional area of
tion as a function of slit pitch is due to SPP interference with the a-Si/BaTiO3/Si. c) Normalized electrooptic response (|S21|) in dB, as
light transmitted through each slit. Transmitted light modula- a function of the modulating frequency in logarithmic scale. The −3 dB
electrooptic bandwidths for the Mach−Zehnder interferometer (MZI) and
tion was ascribed to two effects, electrically induced domain
the racetrack resonator are 800 MHz and 4.9 GHz, respectively. Inset: a
switching and electrooptic modulation of the barium titanate 300 Mb s−1 nonreturn-to-zero eyeline diagram measured on the MZI mod-
index. Devices in the pitch range of 2.52–2.80 µm showed an ulator. SOI horizontal slot waveguide. Reproduced with permission.[38]
EO change in the SPP index of ΔnSPP = 0.001 at 45 V applied Copyright 2014, American Chemical Society.
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optimize such femtosecond laser pulses with the multiphoton energies (idler). The BaTiO3 core radius and the thicknesses of
intrapulse interference phase scan (MIIPS) technique. For the gold and SiO2 shells were designed such that the core–shell
such experiments, single BaTiO3 nanoparticles are a useful nanoparticle has local field enhancement and far-field radiation
source of coherent signal because they are a truly nanometric enhancement both for pump, signal and idler frequencies, such
volume. The SHG from a single BaTiO3 nanoparticle was com- that 7 × 10−7 idler photons were created per pump/signal photon
bined with a pulse shaper to obtain successful compression pair. The core shell nanostructure has potential as SPASER or
of femtosecond laser pulses and control of the spectral phase surface plasmonic enhanced optical parametric amplification.
(Figure 10e).[191] Furthermore, BaTiO3 nanoparticles covered with gold or silver
The nonlinear signal from a material can be strongly nanoparticle seeds (Figure 11c) have a significant potential
enhanced in the vicinity of a plasmonic resonance. This as nanoprobes for combined multiphoton probing. These
principle is used in hybrid nanostructures containing BaTiO3 hybrid nanoparticles have on one hand the harmonic signal,
nanoparticles and a noble metal. One example is core–shell and on the other hand offer an enhancement of the Raman
nanoparticles, where a gold shell is chemically grown on a signal. This hyper Raman scattering technique offers a com-
BaTiO3 core. The gold shell acts as a plasmonic cavity that can plimentary vibrational information from molecules and can be
absorb and scatter light efficiently at chosen wavelengths. By also used to probe environments.[194] BaTiO3 nanoparticles in
carefully tuning the ratio between the shell thickness and the combination with metallic seeds also show an enhanced third
core radius, the plasmonic resonance of the cavity containing a order nonlinearity, which makes them promising as contrast
100 nm BaTiO3 nanoparticle was overlapped with the excitation agents, biosensors or phase conjugate nanomirrors.[119]
signal (Figure 11a). This resulted in a 500-fold enhancement Another example of hybrid nanostructures are dimers con-
of the measured SHG from the core–shell nanoparticle.[192] sisting of a BaTiO3 nanoparticle and a gold nanoparticle. Such
Core shell gold–BaTiO3 nanoparticles encapsulated in a silicon dimers have been successfully assembled by capillarity-assisted
oxide layer (Figure 11b) were used for plasmon enhanced dif- particle assembly (Figure 11d)[129] or by nanopositioning with an
ference frequency generation (DFG).[193] DFG is a second order AFM tip (Figure 11e).[130] These techniques enable the combina-
nonlinear process involving the annihilation of two photons tion of BaTiO3 and gold nanoparticles with different sizes and,
with different energy (pump and signal) and the emission of thus, the optical resonances can be tuned to the desired wave-
a single photon with the difference of the original photons lengths or be overlapped to obtain hybrid resonances. The gold
nanoparticle also reshapes the polar response of the BaTiO3
nanoparticle, such that the SHG is maximized along the axis of
the hybrid dimer.
Finally, BaTiO3 nanoparticles in glycol solutions have
been used for high harmonic generation (HHG). This tech-
nique requires the creation of a BaTiO3 nanoparticle plasma
and results in coherent XUV radiation with attosecond time
scale.[113]
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Figure 13. Plasmonic metasurfaces based on BaTiO3. a–d) Electrooptic metasurface based on Au–BaTiO3 nanoparticle-films. a) Top-view and cross-
section of EO metasurface. b) Optical field distribution for the resonant wavelength of 1064 nm. c) Electrooptic measurement setup, d) dynamic
reflection modulation up to 20 MHz. Reproduced with permission under the terms of a CC-BY-NC license.[203] Copyright 2020, The Authors, published
by Wiley-VCH. e) Au–BaTiO3–ZnO nanocomposites with absorption plasmonic resonances at 589 and 597 nm. Inset: cross-section TEM image of the
sample, with the different materials place annotated. f) Hyperbolic dispersion of the Au–BaTiO3–ZnO nanocomposite films. Reproduced with permis-
sion.[206] Copyright 2019, Wiley-VCH.
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Artemios Karvounis received first his Ph.D. degree in 2018 and then continued as a research fellow
at the Optoelectronics Research Centre of the University of Southampton (United Kingdom).
In 2019, he joined the Optical Nanomaterial Group at the Physics Department of ETH Zurich
(Switzerland). In 2020, he became FP-RESOMUS fellow in the Swiss research network NCCR
MUST. The topics of his research include experimental nanophotonics, photonic metamaterials,
and the development of advanced optical materials.
Rachel Grange is an assistant tenure-track professor in the field of nonlinear integrated and
nanophotonics in the Department of Physics at ETH Zurich (Switzerland). From 2011 to 2014, she
was a group leader at the Friedrich Schiller University in Jena (Germany). Her research covers
material investigations at the nanoscale with high resolution imaging tools. She develops top-
down and bottom-up fabricated nanostructures with metal-oxides, mainly lithium niobate and
barium titanate. Her goal is to understand and control their behaviors to design versatile compact
photonic devices.
Adv. Optical Mater. 2020, 8, 2001249 2001249 (23 of 23) © 2020 The Authors. Published by Wiley-VCH GmbH