RV COLLEGE OF ENGINEERING®, Bengaluru - 59

Department of Electronics & Communication Engineering

3rd Semester- Analog Microelectronic Circuits (18EC33)
Tutorial-1

17.10.2021
1. In a process technology for which tox = 12nm and µn = 600cm2/v.sec, find Cox and kn’ and
the over drive voltage VOV required for an NMOS transistor, with an aspect ratio of 15,
to operate in saturation with a drain current = 150µA. Determine the minimum value of
VDS needed. Also calculate rDS for small values of VDS.
2. A PMOS transistor has tox = 20nm, µp = 400cm2/v.sec, Vt = - 0.8V and W/L = 12. Find the
drain current for the following cases. a) VGS = - 5V & VDS = - 1V
b) VGS = - 2V & VDS = - 1.2V.
3. An NMOS transistor operating in linear region with V DS = 0.1V is found to conduct 60µA
with VGS = 2V and 160µA with VGS = 4V. Find Vt of the device.
4. Determine the region of operation of the MOSFET in the circuits of fig1.
Assume |Vt| = 0.4V.

5. In the circuit of fig2, calculate the minimum allowable VDD, so that the transistor must
not enter triode region. Assume Vt = 0.4 V, kn’ = 200µA/v2 and λ = 0.

6. The NMOS transistor in fig 3 has Vt = 0.5V, aspect ratio =200, kn’=0.2mA/v2. What value
of VB places the transistor at the edge of saturation?
7. An NMOS device operating in saturation with λ=0 must provide a trans-conductance of
1/50Ω. Vt = 0.4V and kn’ = 0.2mA/v2. a) Determine W/L if ID = 0.5mA. b) Determine W/L if
VGS – Vt = 0.5V. c) Determine ID if VGS – Vt = 0.5V.
8. An NMOS device with VA = 10V must provide an intrinsic gain of 20 with VDS = 1.5V.
Determine the required value of W/L, if ID =0.5mA. Assume Vt = 0.4V and kn’ = 0.2mA/v2.
 RV COLLEGE OF ENGINEERING®, Bengaluru - 59
Department of Electronics & Communication Engineering
3rd Semester- Analog Microelectronic Circuits (18EC33)
Tutorial-1

9. If λ = 0, what value of W/L places the P-channel device at the edge of saturation in the
circuit of fig4?

10. Draw the small signal equivalent model for the circuit in fig5 and fig 6. Assume all
transistors operate in saturation and λ ≠ 0. Also determine the small signal gain of fig 6.
11. Determine the drain current in the circuit of fig7, if µnCox =100µA/v2, Vt =0.5V and λ = 0.
What value of RD is necessary to reduce ID by a factor of 2?
12. For the two circuits shown in fig8, determine V1, V2, V3, V4 and V5. Kn’W/L = 2mA/v2,
Vt = 1V and λ=0.

13. Design the circuit in fig9, so that the PMOS device operates in saturation with VD biased
1V from the edge of triode region, with ID = 1mA and VD = 3V. The device has Vt = - 1V
and kp’W/L = 0.25mA/v2. Assume 10µA current in the voltage divider.
14. In the common source amplifier circuit of fig10, determine ID, gm and ro. Draw the small
signal equivalent circuit and calculate Rin, Ro, vi/vs, vo/vi and vo/vs.