Ec8353-Electron Devices and Circuits: UNIT III

EC8353- ELECTRON DEVICES AND CIRCUITS
UNIT iii
AMPLIFIERS
E.ELAKKIA,
ASSISTANT PROFESSOR/EEE,
R.M.K.ENGINEERING COLLEGE
21 August 2020 E.ELAKKIA/AP/EEE/RMKEC 1

SYLLABUS
• BJT small signal model – Analysis of CE, CB, CC
amplifiers- Gain and frequency response –
MOSFET small signal model– Analysis of CS and
Source follower – Gain and frequency response-
High frequency analysis.

CONTENTS
• BJT small signal model – Analysis of CE, CB, CC amplifiers
• Gain and frequency response
• MOSFET small signal model– Analysis of CS and Source
follower
• Gain and frequency response-
• High frequency analysis.
• https://www.youtube.com/watch?v=NESchIntkR8&list=PLBln
K6fEyqRiw-GZRqfnlVIBz9dxrqHJS&index=92
 BJT: Two port network, Transistor hybrid model,
determination of h- parameters, conversion of h-
parameters, generalized analysis of transistor
amplifier model using h-parameters, Analysis of CB,
CE and CC amplifiers using exact and approximate
analysis, Comparison of transistor amplifiers.
 FET: Generalized analysis of small signal model,
Analysis of CG, CS and CD amplifiers, comparison of
FET amplifiers.

SMALL SIGNAL AMPLIFIER ANALYSIS
 We represent the transistor amplifier circuit in the
form of a two port network as shown in fig• This
two port network represent the transistor in any
one of its three configurations (CE,CB,CC).

Small Signal Analysis of Amplifiers
• Small signal response is analyzed using the h-parameter model

• Response of an amplifier depends on frequency considerations.
•Frequency response curves of RC Coupled amplifier , DCamplifier is
shown.
•There are 3 regions of frequency : low , mid and high
•The difference between high and low frequency is the bandwidth
https://www.yumpu.com/en/document/read/51015358/12-transistor-audio-power-amplifiers-talking-electronics

RC Coupled Amplifier

DC Amplifier

CE AMPLIFIER

CE AMPLIFIER

Hybrid h-Parameter model for an amplifier
 The equivalent circuit of a transistor can be dram using simple approximation by
retaining its essential features.
 These equivalent circuits will aid in analyzing transistor circuits easily and
rapidly.
 A transistor can be treated as a two part network. The terminal behavior of any
two part network can be specified by the terminal voltages V1 & V2 at parts 1 & 2
respectively and current i1 and i2, entering parts 1 & 2, respectively, as shown in
figure.
Hybrid Equivalent Model
• The hybrid parameters: hie, hre, hfe, hoe are developed and used to
model the transistor. These parameters can be found in a specification
sheet for a transistor
Two Port Network
•Of these four variables V•1, V2, i1 and i2, two can be selected as independent variables and the remaining two can be
expressed in terms of these independent variables. This leads to various two part parameters out of which the
following three are more important
Hybrid Parameters or h-parameters
• If the input current i1 and output Voltage V2 are takes as
independent variables, the input voltage V1 and output current
i2 can be written as
V1 = h11 i1 + h12 V2
i2 = h21 i1 + h22 V2
• The four hybrid parameters h11, h12, h21 and h22 are defined as
follows.
1. h11 = [V1 / i1] with V2 = 0
= Input Impedance with output part short circuited.
Hybrid Parameters or h-parameters
1. h11 = [V1 / i1] with V2 = 0
= Input Impedance with output part short circuited.
2. h22 = [i2 / V2] with i1 = 0
= Output admittance with input part open circuited.
3. h12 = [V1 / V2] with i1 = 0
= Reverse voltage transfer ratio with input part open
circuited.
4. h21 = [i2 / i1] with V2 = 0
= Forward current gain with output part short circuited.
DIMENSIONS OF H PARAMETER
• h11 - Ω
• h22 – mhos
• h12, h21 – dimension less.
as the dimensions are not alike, (i.e) they are hybrid in
nature, and these parameters are called as hybrid parameters.
Hybrid model of two port network
• V1 = h11 i1 + h12 V2 I2 = h1 i1 + h22 V2
• V1 = hi i1 + hr V2 I2 = hf i1 + h0 V2
General h-Parameters for any Transistor
Configuration
hi = input resistance
hr = reverse transfer voltage ratio (Vi/Vo)
hf = forward transfer current ratio (Io/Ii)
ho = output conductance
Hybrid model of two port network
• V1 = hi i1 + hr V2
• I2 = hf i1 + h0 V2
TYPICAL VALUE OF CE, CB & CC
ADVANTAGE OF HYBRID MODEL
Use of h – parameters to describe a transistor have the following
advantages:
•h – parameters are real numbers up to radio frequencies .
•They are easy to measure
•They can be determined from the transistor static characteristics
curves.
•They are convenient to use in circuit analysis and design.
•Easily convertable from one configuration to other.
•Readily supplied by manufactories.

TRANSISTOR HYBRID MODEL OF CE
CONFIGURATION
• In common emitter transistor configuration, the input signal
is applied between the base and emitter terminals of the
transistor and output appears between the collector and
emitter terminals. The input voltage (Vbe) and the output
current (ic) are given by the following equations:
• Vbe = hie.ib + hre.Vc
• ie = hfe.ib + hoe.Vc

CONFIGURATION
• V1 = hi i1 + hr V2
• Vbe = hie.ib + hre.Vce
• I2 = hf i1 + h0 V2
• ic= hfe.ib + hoe.Vce

ANALYSIS OF A TRANSISTOR AMPLIFIER USING H-
PARAMETERS:
To form a transistor amplifier it is only necessary to connect an external load and
signal source as indicated in fig. 1 and to bias the transistor properly.

Consider the two-port network of CE amplifier. RS is the source resistance and ZL is the load impedence h-
parameters are assumed to be constant over the operating range. The ac equivalent circuit is shown in fig. 2.
(Phasor notations are used assuming sinusoidal voltage input). The quantities of interest are the current
gain, input impedence, voltage gain, and output impedence.

Analysis of a Transistor amplifier circuit using h-
parameters
The two port network of Fig. 1.4 represents a transistor in any one of its configuration. It is assumed
that h-parameters remain constant over the operating range.The input is sinusoidal and I1,V1,I2 and V2 are
phase quantities

Current Gain or Current Amplification (Ai)
For transistor amplifier the current gain Ai is defined as the ratio of output current
to input current,i.e,
Ai =IL /I1 = -I2 / I1
From the circuit of Fig
I2= hf I1 + hoV2
Substituting V2 = ILZL = -I2ZL
I2= hf I1- I2ZL ho
I2 + I2ZL ho = hf I1
I2( 1+ ZL ho) = hf I1
Ai = -I2 / I1 = - hf / ( 1+ ZL ho)
Therefore,
Ai = - hf / ( 1+ ZL ho)
Input Impedence (Zi)
• In the circuit of Fig , RS is the signal source resistance .The impedence seen when
looking into the amplifier terminals (1,1’) is the amplifier input impedence Zi,
Zi = V1 / I1
From the input circuit of Fig V1 = hi I1 + hrV2
Zi = ( hi I1 + hrV2) / I1 = hi + hr V2 / I1
Substituting V2 = -I2 ZL = A1I1ZL
Zi = hi + hr A1I1ZL / I1 = hi + hr A1ZL
Substituting for Ai
Zi = hi - hf hr ZL / (1+ hoZL)
= hi - hf hr ZL / ZL(1/ZL+ ho)
Taking the Load admittance as YL =1/ ZL
Zi = hi – (hf hr / (YL + ho))

Voltage Gain or Voltage Gain Amplification
Factor(Av)
• The ratio of output voltage V2 to input voltage V1 give the
voltage gain of the transistor i.e,
Av = V2 / V1
Substituting
V2 = -I2 ZL = A1I1ZL
Av = A1I1ZL / V1 = AiZL / Zi

Output Admittance (Yo)
• Yo is obtained by setting VS to zero, ZL to infinity and by
driving the output terminals from a generator V2. If the
current V2 is I2 then Yo= I2/V2 with VS=0 and RL= ∞.
From the circuit of fig
I2= hf I1 + hoV2
Dividing by V2,
I2 / V2 = hf I1/V2 + ho

Output Admittance (Yo)
With V2= 0, by KVL in input circuit,
RSI1 + hi I1 + hrV2 = 0
(RS + hi) I1 + hrV2 = 0
I1 / V2 = -hr / (RS + hi)
therefore I2 / V2 = hf (-hr/( RS + hi)+ho
Yo= ho- hf hr/( RS + hi)
The output admittance is a function of source resistance. If the
source impedence is resistive then Yo is real.

Voltage Amplification Factor(Avs) taking into
account the resistance (Rs) of the source
• This overall voltage gain Avs is given by
Avs = V2 / VS = V2/V1 *V1/VS = Av V1/ VS
From the equivalent input circuit using Thevenin's equivalent for
the source shown in Fig
V1 = VS Zi / (Zi + RS)
V1 / VS = Zi / ( Zi + RS)
Then, Avs = Av Zi / ( Zi + RS)
Substituting Av = AiZL / Zi
Avs = AiZL / ( Zi + RS)

Current Amplification (Ais) taking into account the
sourse Resistance(RS)
• The modified input circuit using Norton’s equivalent
circuit for the calculation of Ais is shown in Fig.
• Overall Current Gain,
Ais = -I2 / IS
= - I2I1 *I1 IS
= Ai I1/IS
From Fig. I1= IS RS / (RS + Zi)
I1 / IS = RS / (RS + Zi)
and hence, Ais = Ai RS / (RS + Zi)

Operating Power Gain (AP)
• The operating power gain AP of the transistor is defined as
AP = P2 / P1
= -V2 I2 / V1 I1
= AvAi
= Ai AiZL/ Zi
AP = Ai2(ZL/ Zi)

Analysis of Transistor Amplifier using Complete h-
Parameter Model
• In the h-parameter model consider the load Resistance RL and input signal Vs.
The expressions for Current gain, Voltage gain ,input and output impedance are:
1. Current Gain:
Ai=-hf/(1+hoRL)
Where Ai is the current amplification or current gain

• The overall current gain taking source resistance is given by:
Ais=Ai * (Rs/Zi + Rs)
where
Zi input impedance
Rs source resistance

Analysis of Transistor Amplifier using Complete h-
Parameter Model
2)Input Impedance(Zi)
Zi= hi+hrAiRL
3)Voltage Gain(Av):
Av=(Ai * RL)/ Zi
Voltage gain taking source resistance is given
by Avs=(Av * Zi)/(Zi+Rs)
4) Output Admittance(Yo)
Yo=ho-hf * hr/(hi+Rs)
CONFIGURATION

TRANSISTOR HYBRID MODEL OF CB
CONFIGURATION

TRANSISTOR HYBRID MODEL OF CC
CONFIGURATION

EXACT ANALYSIS RESULTS FOR CE, CB AND CC

TYPICAL VALUES

Characteristics of Common Base Amplifier
• Current gain is less than unity and its magnitude decreases
with the increase of load resistance RL,
• Voltage gain AV is high for normal values of RL,
• The input resistance Ri is the lowest of all the three
configurations, and
• The output resistance Ro is the highest of all the three
configurations.

Applications Of CB Amplifier
• Applications The CB amplifier is not commonly used for
amplification purpose. It is used for
• Matching a very low impedance source
• As a non inverting amplifier to voltage gain exceeding unity.
• For driving a high impedance load.
• As a constant current source.

Characteristics of Common Collector Amplifier
• For low RL (< 10 kΩ), the current gain Ai is high and almost equal
to that of a CE amplifier.
• The voltage gain AV is less than unity.
• The input resistance is the highest of all the three configurations.
• The output resistance is the lowest of all the three configurations.
Applications :The CC amplifier is widely used as a buffer stage
between a high impedance source and a low impedance load.

Characteristics of Common Emitter Amplifier
• The current gain Ai is high for RL < 10 kΩ.
• The voltage gain is high for normal values of load resistance
RL.
• The input resistance Ri is medium.
• The output resistance Ro is moderately high.
Applications: CE amplifier is widely used for amplification.

Comparison of CE,CB & CC

CE CONFIGURATION

Simplified General h-Parameter Model
The model can be simplified based
on these approximations:
hr  0 therefore hrVo = 0 and ho 

 (high resistance on the output)

Simplified common emitter hybrid model:
• In most practical cases it is appropriate to obtain approximate
values of A V , A i etc rather than calculating exact values. How the
circuit can be modified without greatly reducing the accuracy. Fig.
shows the CE amplifier equivalent circuit in terms of h-
parameters Since 1 / hoe in parallel with RL is approximately equal
to RL if 1 / hoe >> RL then hoe may be neglected. Under these
conditions.

Simplified common emitter hybrid model:
Ic = hfe IB .
hre vc = hre Ic RL = hre hfe Ib RL .
• Since h fe.h re = 0.01(approximately), this voltage may be neglected in
comparison with h ic Ib drop across h ie provided RL is not very large. If load
resistance RL is small than hoe and hre can be neglected.
• Output impedence seems to be infinite. When Vs = 0, and an external voltage

is applied at the output we fined Ib = 0, I C = 0. True value depends upon RS and
lies between 40 K and 80K.

SIMPLIFIED MODEL OF CE AMPLIFIER

SIMPLIFIED HYBRID MODEL

Analysis of CE Amplifier using Approximate h
model

Analysis of CE Amplifier using Approximate h-
model

Analysis of CB Amplifier using the Approximate
Model

Analysis of CB Amplifier using the Approximate
Model

Conversion from CE to CB & CC

Steps involved in analysing a BJT amplifier using
small signal model
• Guideline 1: Draw the actual • Guideline 2: short coupling and
circuit diagram bypass capacitor

small signal model
Guideline 4: Mark Point B, C & E and locate
Guideline 3: short Vcc and groundline these points as start of the equivalent circuit

small signal model
Guideline 5: replace the transistor by it hybrid model and
calculate effective Ri and effective Ro

CE AMPLIFIER WITHOUT EMITTER RESISTOR

CE AMPLIFIER WITH EMITTER RESISITOR

CE AMPLIFIER WITH VOLTAGE DIVIDER BIASING
Actual circuit diagram AC equivalent circuit

ANALYSIS OF CE AMPLIFIER WITH VOLTAGE
DIVIDER BIASING

ANALYSIS OF CE AMPLIFIER WITH VOLTAGE
DIVIDER BIASING

CE AMPLIFIER WITH FIXED BIAS
ACTUAL CIRCUIT DIAGRAM AC EQUIVALENT CIRCUIT

ANALYSIS OF CE AMPLIFIER WITH FIXED BIAS

Analysis of Transistor Amplifier using simplified h-
Parameter Model
• Common Emitter Configuration
Fixed Bias configuration:
Input Impedance Zi = RB || hie
Output Impedance Zo=RC || (1/hoe)
Voltage gain Av=-hfe * (RC || (1/hoe) /hie
Current Gain Ai=hfe * RB/(RB + hie)
Voltage Divider Configuration:

Input impedance Zi=(RB1 || RB2)|| hie
Output Impedance Zo=RC ||(1/hoe)
Voltage gain Av=-hfe * [RC || (1/hoe)]/hie
Current gain Ai=hfe * (RB1||RB2)/(RB1|| RB2) + hie
EMITTER FOLLOWER
The emitter follower transistor is a design which is basically a CC amplifier.
Current gain:
Input resistance:
Voltage gain:
Output resistance An emitter follower

configuration with biasing
21The emitter
August 2020 follower is used for impedance matching.
E.ELAKKIA/AP/EEE/RMKEC 76
ANALYSIS OF CS AND CD AMPLIFIER
JFET PARAMETERS
A C Drain resistance(rd):
• also called dynamic drain resistance
• It is the a.c.resistance between the drain and source
terminal,when the JFET is operating in the pinch off or saturation
region.
• It is given by the ratio of small change in drain to source voltage
∆Vds to the corresponding change in drain current ∆Id for a
constant gate to source voltage Vgs.
• rd=∆Vds/ ∆Id where Vgs is held constant.

JFET PARAMETERS
• TRANSCONDUCTANCE (gm):
• It is also called forward transconductance . It is given by the
ratio of small change in drain current (∆Id) to the
corresponding change in gate to source voltage (∆Vds)
• Mathematically the transconductance can be written as
gm=∆Id/∆Vds

JFET PARAMETERS
• AMPLIFICATION FACTOR (µ)
• It is given by the ratio of small change in drain to source
voltage (∆Vds) to the corresponding change in gate to source
voltage (∆Vgs)for a constant drain current (Id).
• Thus µ=∆Vds/∆Vgs when Id held constant
• The amplification factor µ may be expressed as a product of
transconductance (gm)and ac drain resistance (rd)
• µ=∆Vds/∆Vgs=gm rd
FET SMALL SIGNAL MODEL
Small Signal Current source model for FET Small Signal voltage source model for FET


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EC8353- ELECTRON DEVICES AND CIRCUITS

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• Small signal response is analyzed using the h-parameter model

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• Vbe = hie.ib + hre.Vce

• ic= hfe.ib + hoe.Vce

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Where Ai is the current amplification or current gain

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hr  0 therefore hrVo = 0 and ho 

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• Output impedence seems to be infinite. When Vs = 0, and an external voltage

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Actual circuit diagram AC equivalent circuit