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09 - Tomas Bauer - Silex Microsystems
09 - Tomas Bauer - Silex Microsystems
Medical
sensors
Timing Inertial
devices navigation
sensors
Micromirror
devices Microphones
Thermal Camera
imaging autofocus
Industrial Consumer
Program
Development Manufacturing
Start
Pilot
Prospect TG Concept TG Prototype TG TG Production
Production
Phase 0 Phase 1 Phase 2 3 Phase
Phase
Acronyms Defined
PFMEA - Process Failure Mode Effects Analysis
Examples of products
• TSV Integration in MEMS High Vacuum Cavity manufactured at Silex:
[10-3 mbar]
• Accelerometers*
• Cantilevers
• Cell Analysis
• Drug Delivery
• Electrodes
• Filter structures
• Flow sensors*
• Gyros*
• IC Interposers*
• Lab-on-chips*
• Microphones*
• Mirrors*
• Needles
• Optical Membranes
• Optical Benches*
• Pressure sensors*
• Print heads*
• RF switches
• Resonators*
• Touch Membrane
• µBatteries*
• IR Sensors
Sil-Via® Bump Interface MEMS Structure
* Sil-Via® implemented
Flip-chip
bumping
• Full wafer (300µm) thickness for wafer handling and structural strength
• Unique construction for high reliability vias
• Thick plating for low ohmic resistance per via (15mΩ typ)
Met-Cap® Wafer
Partially filled full
with TSV wafer thickness metal
via technology
Vacuum Sealed
Cavity
Hermetic seal
ring for die
Hermetic seal
and electric
connection
for Met-Via®
Device cavity
Frontside Backside
Backside Wafer Minimum Via
Met-Via Via Via
Via Depth Thickness Via Pitch Density
Generation Diameter Diameter
[µm] [µm] [µm] [1/mm2]
[µm] [µm]
Silex Met-Via®
Silex Met-Via® based thick wafer metal via interposer (300 um)
• Met-Via® TSVs is full wafer thickness TSV, which means the Si interposer
replaces the need for an intermediate BGA laminate in 2.5D solutions
• Rigid interposers take advantage of robust wafer processing
– Eliminates thin wafer handling (temporary bonding / de-bonding)
– Reliable wafer handling at 300-400 µm
• Eliminating organic substrate improves heat transfer and thermal
matching of die to package
• All signal routing is done in a multilayer fanout on top side of the
Met-Via® Interposer – going directly from microbump with 5µm/5µm
line/space to a PCB pitch of 400µm or 500µm.
Copyright © 2015 Silex Microsystems. All rights reserved. 19
Silex Glass Wafer Via – TGV for RF Applications
D2
Pt bottom electrode
PZT
Si membrane
Si membrane
cavity
Zero-Crosstalk™
Feature
Low Temperature Low Loss Metal Via with Cavities for MEMS or
Hermetic Bonding Optional Coaxial Shielding CMOS MEMS Structures
Integration
CMOS WAFER