No. of Printed Pages : 06 Roll No. .......................

C515
B. Sc. EXAMINATION, 2020
(Third Semester)
(Main & Re-appear)
(PHY)
DPH205
ELECTRONIC AND NETWORKING THEORY

Time : 2½ Hours] [Maximum Marks : 75

Before answering the question-paper candidates

should ensure that they have been supplied to correct
and complete question-paper. No complaint, in this
regard, will be entertained after the examination.

Note : Attempt Four questions in all. All questions

carry equal marks.

(3)M-C515 1
1. (a) Why does a pure semiconductor behave
like an insulator at absolute zero
temperature ?
(b) What is the need of doing biasing in
transistor circuit ?
(c) The collector and base current of npn
transistor are measured as IC = 5 mA,
IB = 50 A and ICBO = 1 A. Determine
the value of ,  and IE.
(d) Define ripple factor. What is the use of
calculating ripple factor in a rectifier
circuit ?
(e) An amplifier has a voltage amplification
Av and a fraction mv at its output is
feedback in opposition to the input. If
mv = 0.1. and Av = 100, calculate the
percentage change in the gain of the
system if Av falls 6 dB due to aging.

(3)M-C515 2
2. (a) With the help of circuit diagram explain

the working of a full wave rectifier. Also

justify that the efficiency of full wave

rectifier is twice as compare to half wave

rectifer.

(b) Differentiate between intrinsic and

extrinsics semiconductor.

(c) What is the function of filter in regulated

power supply ?

3. (a) Describe, how diode can be used as a

capacitor. Also mention different types

of capacitance associated with diode.

(b) What is p-n junction diode ? Explain the

conduction mechanism in reverse bias
p-n junction diode in terms of flow of

charge carrier.

(3)M-C515 3
4. (a) Describe, how loadline helps in
understanding the working of transistor.
(b) With the help of circuit diagram discuss
the characteristic curve for CB
configuration of n-p-n transistor.

5. (a) For a p-n-p transistor biased in the active

region (in each region E, B and C) using
plot of potential variation and minority
carrier concentration, explain various
current component associated with it.
(b) In the given figure transistor has  = 19.
If VE = 4V, determine the value of
RB.

(3)M-C515 4
6. (a) Briefly introducing various parameters
used for two port network, explain the
transistor hybrid model for common
emitter and common collector
configuration.
(b) A transitor used in CE connection has the
following set of h-parameters when the d.c.
operating point is VCE = 5V and
I = 1 mA. hie = 1700 , hre = 1.3 × 10–4,
hfe = 38 and hoe = 6 × 10–6  . If the a.c.
load rL seen by the transistor is 2 k. Find :
(i) Input Impedance
(ii) Current Gain
(iii) Voltage Gain.

7. (a) Describe in detail how h-parameter can

be determine experimentally.
(b) Write notes on the following :
(i) Controlled sources and
(ii) Limitations of h-parameters.
(3)M-C515 5
8. (a) List the operation of BJT in cutoff,
saturation and linear region. Also discuss,
how the fixed biasing is provided to CE,
n-p-n configuration.
(b) Determine the voltage VCB and the
current IB for the common base
configuration with  = 60 for the
following circuit : 10,5

9. (a) Discuss the classification of amplifier and

explain the working of RC-coupled
transistor amplifier.
(b) Differentiate between positive and
negative feedback. Also explain the
feedback used in amplifier in detail.

(3)M-C515 6 40