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Electronic Devices and Circuits EE-231: CH:5 AC Biasing BJT
Electronic Devices and Circuits EE-231: CH:5 AC Biasing BJT
EE-231
CH:5 AC Biasing BJT
Prepared by: Dr. Waleed Tariq Sethi- Ghulam Ishaq Khan Institute-Fall 2021
CHAPTER OBJECTIVES
Prepared by: Dr. Waleed Tariq Sethi- Ghulam Ishaq Khan Institute-Fall 2021
Introduction
Small Scale vs Large Scale Analysis
Equivalent Model:
A model is an equivalent circuit that represents the AC characteristics of the
transistor.
A model uses circuit elements that approximate the behavior of the transistor.
The re model
The hybrid PI model
Hybrid equivalent model
Prepared by: Dr. Waleed Tariq Sethi- Ghulam Ishaq Khan Institute-Fall 2021
Amplification in the ac Domain
Efficiency =P0/Pi
The output sinusoidal signal is greater than the input signal, i.e;
the output power is greater than input ac power.
How the ac power output can be greater than its power input?
An ac power output greater than the input ac power is only due
to dc power.
Conversion efficiency=P0(ac)/Pi(dc)
Where P0(ac) is the ac power to the load
Pi(dc) is the dc power supplied
iac(p-p)>>ic(p-p)
Peak to peak value of the output current far exceeds that of the
control current.
Amplification in the ac Domain
The superposition theorem is applicable for the analysis and design of
the dc and ac components of a BJT network, permitting the separation of
the analysis of the dc and ac responses of the system.
By removal of the dc supply and insertion of the short-circuit equivalent for the capacitors.
BJT Transistor Modeling
The ac equivalent of a network is obtained by:
1. Setting all dc sources to zero and replacing them by a short-circuit equivalent.
2. Replacing all capacitors by a short-circuit.
3. Removing all elements bypass by the short-circuit equivalents.
4. Redrawing the network in a more convenient and logical form.
Prepared by: Dr. Waleed Tariq Sethi- Ghulam Ishaq Khan Institute-Fall 2021
The re Transistor Model
BJTs are basically current-controlled devices, therefore the re
model uses a diode and a current source to duplicate the behavior
of the transistor.
Prepared by: Dr. Waleed Tariq Sethi- Ghulam Ishaq Khan Institute-Fall 2021
1- Common Emitter Conf
• Output Characteristics
Prepared by: Dr. Waleed Tariq Sethi- Ghulam Ishaq Khan Institute-Fall 2021
1- Common Emitter Conf
• Impedance analysis
Prepared by: Dr. Waleed Tariq Sethi- Ghulam Ishaq Khan Institute-Fall 2021
1- Common Emitter Conf
• Final CE Conf Equivalent model for BJT
Prepared by: Dr. Waleed Tariq Sethi- Ghulam Ishaq Khan Institute-Fall 2021
Early Voltage
Prepared by: Dr. Waleed Tariq Sethi- Ghulam Ishaq Khan Institute-Fall 2021
2- Common Base Confg
Prepared by: Dr. Waleed Tariq Sethi- Ghulam Ishaq Khan Institute-Fall 2021
2- Common Base Confg
Prepared by: Dr. Waleed Tariq Sethi- Ghulam Ishaq Khan Institute-Fall 2021
NOTE:
Prepared by: Dr. Waleed Tariq Sethi- Ghulam Ishaq Khan Institute-Fall 2021