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    Effect: Lab Roup13

    Uploaded by

    Bhanu Macharla
    This document describes an experiment to study the Hall Effect in an extrinsic semiconductor sample to determine the charge carrier type, density, and mobility. The sample used was crystal no. 7622. Measurements of voltage were taken at different magnetic field strengths and currents to calculate the Hall coefficient, charge density, and mobility. The sample was found to be a p-type semiconductor based on the positive value of the Hall coefficient calculated from the linear regression of voltage vs. current data points. Precautions mentioned include not exceeding the current rating of the Hall Effect setup to avoid damaging the sample.

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    Effect: Lab Roup13

    Uploaded by

    Bhanu Macharla
    18 views13 pages
    This document describes an experiment to study the Hall Effect in an extrinsic semiconductor sample to determine the charge carrier type, density, and mobility. The sample used was crystal no. 7622. Measurements of voltage were taken at different magnetic field strengths and currents to calculate the Hall coefficient, charge density, and mobility. The sample was found to be a p-type semiconductor based on the positive value of the Hall coefficient calculated from the linear regression of voltage vs. current data points. Precautions mentioned include not exceeding the current rating of the Hall Effect setup to avoid damaging the sample.

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    2001ME37_03

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    This document describes an experiment to study the Hall Effect in an extrinsic semiconductor sample to determine the charge carrier type, density, and mobility. The sample used was crystal no. 7622. Measurements of voltage were taken at different magnetic field strengths and currents to calculate the Hall coefficient, charge density, and mobility. The sample was found to be a p-type semiconductor based on the positive value of the Hall coefficient calculated from the linear regression of voltage vs. current data points. Precautions mentioned include not exceeding the current rating of the Hall Effect setup to avoid damaging the sample.

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    © All Rights Reserved
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    18 views13 pages

    Effect: Lab Roup13

    Uploaded by

    Bhanu Macharla
    This document describes an experiment to study the Hall Effect in an extrinsic semiconductor sample to determine the charge carrier type, density, and mobility. The sample used was crystal no. 7622. Measurements of voltage were taken at different magnetic field strengths and currents to calculate the Hall coefficient, charge density, and mobility. The sample was found to be a p-type semiconductor based on the positive value of the Hall coefficient calculated from the linear regression of voltage vs. current data points. Precautions mentioned include not exceeding the current rating of the Hall Effect setup to avoid damaging the sample.

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    of 13

    Etpesinent No: 3

    Nome of the Epeoiment

    STUDY of HALL EfFECT

    CYystal No 7622

    Name Macharla Venkato Bhonu

    90o1 ME3+
    Roll no

    Labroup13

    Date -9-2da
    Aim To study Hai Effect n extinsic Semi Con ductn q

    Somples and detesmine the yee, density and mobiltty of

    mojosity Chage Cassievs.

    Appasatus Requied

    Semi Conducing Sample, Compass,


    Halr Effect setup
    Extsinsic

    Constont Pouoed Suppy Gauss ietes


    wth Gensos Electso
    unit,
    magnet Connectinq woes.

    wloskinq foxmua

    RH Vd H6 RH
    R

    p-Mobility of chorqe n-charqe density


    R HalI Co efficent
    NH Measured Hal s-Conduckvity f a charge magnitude

    Noltage Sample 6
    B Magnetic fietd

    Genesated

    Cuvent
    in r cuit
    DJAGEAms

    EXPER ImENTAL SE TUP

    STUDY OF HALL EFFECT


    21 LLFFECTSFTUP

    wHert yoltoe
    ON
    CONSTT T URRE 1
    ID26 OwER SUf PLY

    Cutert

    Conto

    Sersou of
    ficld Etonsic Semi (odutt co
    Magnehc
    Sope
    CompassB
    Cwcuit elaq1amn

    B
    Obseovaion Table

    Least Count of Ammetesr 0-0]mA Least count of voltmeteg- OImV

    Gausmeles =
    10GG Resisivty of cxystol - 6
    Least Count of
    Csto No 1t2
    TicknesS of CYysta 05 mm

    By Couectng
    \eet's of Peadings V.(6,1) V3(16,-1),V3(-6,11)
    voltage i S obtoined by
    Vy-8,) . Hal

    4
    5mm Nalue of consBant field -
    2000
    Dimension of crysto 6mm x

    în mV.
    o voltages are

    TI +6fteft 6 [eight> Lelt)


    Right]
    ma) yT N-yav,ev%(yoltY,-1) |Val-V,11)
    O.5 -3-30 S4 35 23a H.05

    o -5ao 9 5 53 585
    3 1-2 95 S 335
    -9-4o 2
    o 2 - lo 5
    410
    -10-305
    -13:30 20 5 3 13 3 1505
    -14-10 23 0 y5 -14- t6S35

    2-2 16 20 5 0 G 163 8315


    |a.5 -18 30 28 3 -319. |20-9

    -9 o 2o 19-7 90 1 p2-595

    3 - t o 34-0 22 - 224
    125
    Linea Reqsession

    potnt's will
    Tf we plot ail the on
    qreph ue not qet a

    to Shai qht ine using


    Stiaiqht une, So we aPvoximate

    Linear Yeqression.

    tet the approximated CurNe be y: a1t b

    osmula ;
    Accovdng to fneaz Regoession

    a: (1J) -\57,) (63)


    ( : )
    N 7 - E1i)

    Gien
    H ' n : and i n
    valus of
    bhserahon Table Sublitute a
    From
    fosmut a to qe aand b.
    n the above

    b-o0649
    a: 8 396

    the equahon of stroght line plot


    "
    [ t VS J] s

    Hence

    8.296 1- 6-0649
    y:
    45415

    Scoue qSJuntti2mA
    t

    Equfion 314-006
    Slore 3 6

    XAxIS 0 mA
    Colculations
    is
    Equabon of Oe tn VH S gtaph

    y 8:3962 - 0.0649

    8396 it denotes
    of the above Stroighttne s
    The slope

    iven d: 0.5mm [d denotes thicknes of Sanple

    a000 9 Ce denotes Magnehc field

    Slope x

    8316x
    65xt
    &o00

    AmG
    2099 x 6

    Holl toeffient &09x10amG

    2-019 c

    Coxoies density chosqe dencity [n


    chavge Magnítude
    -6
    9.011%1o x 6x1o c C6Ais
    -971x16"]m3
    24
    Choige density (n) .97mxo3
    Mobiliby of a choge (P)

    6RH conduchiy
    :ResisHviEy
    RH
    Given = 6 Acm
    099 xio'
    GxI m

    0-349xio

    349 x m

    Mobility of chorge ) : 349 xo

    Exso% Analy sis Moimun fossible Eosos

    RH

    n09 bo th Sides
    Toking
    nI- An6
    n at ind
    sOR
    on
    both ides
    Differentahng

    dRn
    VH
    Fo the First Readinq on obseovatioo Table

    VH 4095 m d 0-5m, T:0.5mA, B3000


    dV 0 mV d 0-Otm A, d8: 10G

    dRH d dA) di db
    RH VH

    Constone
    Becouse thickness of Sample alo ng
    ursent (C) s

    So difesent ahnq Constont esult ld)o


    dV
    dR H
    t

    0ImV 0.01mA+1DG

    40a5m V
    O 5m A 20004

    dRH 0.04153

    dRH(O ouq53) (1M)

    (o-o4153) l2 o99xfo') l c
    6

    039x1Dle
    dRn
    The estos tn Rn S -031kto

    ReSult+

    Hall (oefficient s obtaoed y

    R 011xio" o3916 c

    S posikue t is p- type Senico nductor


    If RH
    it S n-type cemi tonductor.
    S Negalbye
    I f RH

    So our RH S PosSive

    Sample was of (-type.


    The Semi Conductos
    Pse cauons
    Hall Efect
    above mA from
    Do not eiceed the CUToent

    Set up, it may damage the sarnple.

    from Conctant
    ncieaséd Vesy slowly
    a) Cusent should be

    to elecromagnet as tt a high
    CUDoenE pouwes supply

    CUDBent 9upplies
    to
    of Constoant
    cusdent 9uppy
    Switch off the powe
    3)
    3)
    belose the changin 9 the polavíty
    electvo magnet

    in Constant
    CUBsent supply
    the polagity
    4) Aftes chonginq
    check the maqneic
    divechon of Maqneic field,do
    to chonge
    mekes.
    field by Gauss
    With
    of Somple with Cose.
    the leods of uide

    5) Handle

    s e it bíeats
    iqotous

    Switch off the Constant


    axe ea ing the table
    6 when you

    Cuooent poue SuPp


    SouscesS of E5

    inciease in CUToent
    )Rapid
    of leads
    Jm propes Seting
    on Hal effect set up
    3) Fluctuainq eadtngs
    Senso opposite ditecion fo t ond 6
    4) Putinq

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