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Curso Propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero
Curso Propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero
Curso Propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero
They are the basis for MOS memory structures such as Flash memory and
CMOS logic structures.
Before we can understand the MOSFET we need to look closely at the MOS
diode itself…
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 139
SiO2
d Si
V is the voltage applied to the metal contact and is positive if the applied bias
is positive with respect to the Ohmic contact.
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 140
Band diagram
Evac
eχ
eφ s
eφ m
EC
Eg 2
Ei
eψ B
EF
d EV
p-type
metal oxide semiconductor
At thermal equilibrium, with no bias applied the Fermi levels of the metal and
semiconductor are aligned.
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 141
1) At zero applied bias, the energy difference between the metal and the
semiconductor work functions is zero (the flat-band condition),
⎛ Eg ⎞
eφ ms = eφ m − eφ s = eφ m − ⎜⎜ eχ + + eψ B ⎟⎟ = 0
⎝ 2 ⎠
2) The only charges which exist in the system at any bias are those in the
semiconductor and those with equal and opposite sign on the metal surface.
For the purposes of our discussion we will consider a p-type semiconductor MOS diode.
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 142
MOS diode under bias accumulation
Negative bias (V<0)
No current flows so semiconductor Fermi level constant. The bands bend
upwards. Excess holes are induced at the semiconductor-oxide interface.
p p = ni e ( Ei − EF ) kT
Qm = Qs
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 143
p p = ni e ( Ei − EF ) kT
Qsc = −eN AW
n p = ni e ( EF − Ei ) kT
Qs = Qn + Qsc = Qn − eN AWm
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 146
Surface depletion region
Semiconductor Devices, 2/E by S. M. Sze Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 147
Electrostatic potential
Band-bending is described in terms of a quantity which we will call the
electrostatic potential. This is defined as zero in the bulk and is a measure of
the intrinsic Fermi level position with respect to the bulk intrinsic Fermi level.
n p = ni e ( EF − Ei ) kT & p p = ni e ( Ei − EF ) kT
We can express them too as a function of the electrostatic potential,
n p = ni e q (ψ −ψ B ) kT & p p = ni e q (ψ B −ψ ) kT
ns = ni e q (ψ s −ψ B ) kT & ps = ni e q (ψ B −ψ s ) kT
The following regions of surface potential are therefore identified,
ψs = 0 Flat-band condition
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 149
Depletion width
We can think of the surface depletion region as a one sided n+-p abrupt
junction where the built-in potential is replaced by the surface potential,
2ε sψ s
W=
eN A
Our earlier convenient-but-arbitrary definition stated that at the onset of
strong inversion the electron concentration at the surface is equal to the
substrate impurity concentration (ns=NA),
ni e e (ψ s (inv )−ψ B ) kT = ni e eψ B kT
2kT ⎛ N A ⎞
ψ s (inv ) ≅ 2ψ B = ln⎜⎜ ⎟⎟ Band diagram
e ⎝ ni ⎠
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 150
Depletion width
When the surface is strongly inverted the depletion width is at its maximum,
2ε sψ s (inv ) 2ε s 2ψ B
Wm = ≅
eN A eN A
4ε s kT ln ( N A ni )
Wm =
e2 N A
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 151
C-V Characteristics
In the absence of any work function differences, the applied bias will
appear partly across the oxide and partly across the semiconductor,
V = Vo + ψ s
Semiconductor Devices, 2/E
The potential across the oxide is given by S. M. Sze
V =Fd
Copyright © 2002 John
by, Wiley & Sons. Inc. All
o o rights reserved.
Qs d
Vox =
ε ox
Cox = ε ox d
Qs
Vox =
Cox
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 152
C-V Characteristics
The total capacitance of the MOS diode is a series combination of the oxide
capacitance and the semiconductor depletion-layer capacitance,
εs
Cj =
Co C j W
C=
(C o +Cj )
where,
ε ox
Co =
d
When the applied bias is negative, there is no depletion layer and we have
accumulation of holes at the surface of the semiconductor. In this case, the
total capacitance is close to that of the oxide.
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 153
C-V Characteristics
2ε s eN A (2ψ B )
+ ψ s (inv ) ≅
eN AWm
VT = +ψ B
Co Co
Beyond strong inversion, the capacitance will remain at a minimum value,
ε ox εs
Cmin = Cj =
d + (ε ox ε s )Wm
since,
Wm
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 155
φ m = 3.95eV n+-polysilicon
φ m = 4.1eV Aluminium
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 156
Figure 6.8.
Work function
difference as a
function of
background impurity
concentration for Al,
n+-, and p+
polysilicon gate
materials.
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 157
eφ m EC
eφ s
EF
EC
EF
EV
metal p-Si
EV
SiO2
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 158
Si-SiO2 band diagram
Evac
EC
eφ s
eφ m EC
EF EF
EV
p-Si
EV
metal
SiO2
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 159
Flat-band voltage
At thermal equilibrium, the bands are bent downwards so the semiconductor
surface is negatively charged, and the metal positively charged.
In order to get back to the flat-band condition discussed for our ideal MOS
diode we need to apply a negative bias to the metal (the flat-band voltage),
VFB = φ ms eφm
eφs eφs
eφm
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 160
Traps & charges
Real MOS diodes are also affected by charges trapped within the oxide and
the interface…
Metal
Na+
Mobile ionic charge, Qm
K+
SiO2 + + + Oxide trapped charge, Qot
- - -
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 161
Semiconductor Devices, 2/E by S. M. Sze Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 162
Oxide charges & the flat-band voltage
Consider a positive charge sheet per unit area, Qo within the oxide, inducing
negative charges on both the metal and the semiconductor.
The flat-band condition is reached by increasing the charges on the metal (by
applying a negative voltage, VFB) to reduce the electric field distribution at the
semiconductor surface to zero.
The area under the electric field profile at this point gives the flat-band
voltage,
Qo Qo xo
VFB = − Fo xo = − xo = −
ε ox Co d
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 163
1 ⎡1 d ⎤
( )
Co ⎢⎣ d ∫0
VFB =− xρ x dx ⎥⎦
For a real diode in which the work function difference is nonzero and the
interface-trapped charge is negligible, the flat-band voltage is given by,
VFB = φ ms −
(Q f + Qm + Qot )
Co
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 164
Figure 6.12. Effect of a fixed oxide charge and interface traps on
the C-V characteristics of an MOS diode.
Curso propedéutico de Electrónica INAOE 2009 Dr. Pedro Rosales Quintero 165