AON7405

30V P-Channel MOSFET

General Description Product Summary

The AON7405 uses advanced trench technology to VDS -30V

provide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50A
This device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V) < 6.2mΩ
applications.
RDS(ON) (at VGS = -6V) < 8.9mΩ
• RoHS and Halogen-Free Compliant

100% UIS Tested

100% Rg Tested

DFN 3.3x3.3 EP Top View D

Top View Bottom
1
Pin 1 8

2 7

3 6

4 5
G

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TC=25°C -50
ID
CurrentG TC=100°C -39 A
C
Pulsed Drain Current IDM -210
Continuous Drain TA=25°C -25
IDSM A
Current TA=70°C -20
Avalanche Current C IAR, IAS -44 A
Repetitive avalanche energy L=0.1mH C EAR, EAS 97 mJ
TC=25°C 83
PD W
Power Dissipation B TC=100°C 33
TA=25°C 6.25
PDSM W
Power Dissipation A TA=70°C 4
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 16 20 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 45 55 °C/W
Maximum Junction-to-Case Steady-State RθJC 1.1 1.5 °C/W

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 AON7405

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS= ±25V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 -2.2 -2.8 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -210 A
VGS=-10V, ID=-20A 5.1 6.2
mΩ
TJ=125°C 7.6 9.2
RDS(ON) Static Drain-Source On-Resistance
VGS=-6V, ID=-20A 7.1 8.9 mΩ
VGS=-4.5V, ID=-10A 10.7 mΩ
gFS Forward Transconductance VDS=-5V, ID=-20A 46 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.7 -1 V
G
IS Maximum Body-Diode Continuous Current -50 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1960 2450 2940 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 380 550 720 pF
Crss Reverse Transfer Capacitance 220 370 520 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 7 14 28 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 33 42 51 nC
Qg(4.5V) Total Gate Charge 16 21 26 nC
VGS=-10V, VDS=-15V, ID=-20A
Qgs Gate Source Charge 5.5 7 8.5 nC
Qgd Gate Drain Charge 7 12 17 nC
tD(on) Turn-On DelayTime 9.5 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, 10 ns
tD(off) Turn-Off DelayTime RL=0.75Ω, RGEN=3Ω 104 ns
tf Turn-Off Fall Time 78 ns
trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs 20 25 30 ns
Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs 37 47 57 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AON7405

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

120 120
VDS=-5V
100 -5V 100

80 80
-6V,-8V,-10V
-ID (A)

-ID(A)
60 60
-4V
40 40
125°C 25°C
20 VGS=-3.5V 20

0 0
0 1 2 3 4 5 1 2 3 4 5 6
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

9 1.8

Normalized On-Resistance VGS=-10V

8 ID=-20A
1.6

7
Ω)
RDS(ON) (mΩ

VGS=-6V 1.4
17
6 VGS=-6V
5
ID=-20A
1.2 2
5
10
VGS=-10V
4 1

3 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

21 1.0E+02
ID=-20A
1.0E+01
17
40
1.0E+00
Ω)

13 125°C
-IS (A)

1.0E-01
RDS(ON) (mΩ

125° 25°
1.0E-02
9
1.0E-03

5 1.0E-04
25°
1.0E-05
1 0.0 0.2 0.4 0.6 0.8 1.0
3 4 5 6 7 8 9 10
-VSD (Volts)
-VGS (Volts) Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)

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 AON7405

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 4000
VDS=-15V
3500
ID=-20A
8
3000 Ciss

Capacitance (pF)
2500
-VGS (Volts)

6
2000
4 1500

1000
2 Coss
500
Crss
0 0
0 10 20 30 40 50 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 400
350
100.0 10µs TJ(Max)=150°C
RDS(ON) 10µs 300
100µs TC=25°C
-ID (Amps)

250
Power (W)

10.0
1ms 17
DC 200 5
1.0 2
150
10
0.1 100
TJ(Max)=150°C
TC=25°C 50
0.0
0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10
-VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

RθJC=1.5°C/W 40
1

0.1
PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON7405

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1000 90
-IAR (A) Peak Avalanche Current

80

Power Dissipation (W)

70

TA=25°C 60
TA=100°C 50
100
40
30
TA=150°C
20
TA=125°C 10

10 0
1 10 100 1000 0 25 50 75 100 125 150
µs)
Time in avalanche, tA (µ °C)
TCASE (°
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)
(Note C)

60 10000

50 TA=25°C
-Current rating ID(A)

1000
40
17
Power (W)

5
30 100
2
20
10
10
10

0 1
0 25 50 75 100 125 150 0.00001 0.001 0.1 10 0 1000
°C)
TCASE (° Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

1
Thermal Resistance

RθJA=55°C/W 40
0.1

0.01
PD
0.001
Single Pulse
Ton
T
0.0001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 AON7405

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L E AR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

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