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© 2006 Wiley Periodicals, Inc.
SPURIOUS SUPPRESSION OF A DUAL-
MODE BANDPASS FILTER USING
SIMPLE C-SHAPED
ELECTROMAGNETIC BANDGAP CELLS
Hung-Wei Wu,1,2 Min-Hang Weng,3 Yan-Kuin Su,1,2
Cheng-Yuan Hung,1,2 and Ru-Yuan Yang1,2
1
Department of Electrical Engineering
Institute of Microelectronics
National Cheng Kung University
Taiwan
2
Advanced Optoelectronic Technology Center
National Cheng Kung University
Taiwan
3
National Nano Device Laboratories
Taiwan
sults verified the simulated results well. © 2006 Wiley Periodicals, Inc.
Microwave Opt Technol Lett 48: 2090 –2093, 2006; Published online in
Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.
21870
Key words: electromagnetic bandgap (EBG); bandpass filter (BPF);
spurious; suppression; equivalent circuit
1. INTRODUCTION
The dual-mode filters are attractive in recent years since they have
advantages of narrow bandwidth, two symmetric transmission zeros,
and high-selectivity characteristics in filter frequency response [1].
The dual-mode bandpass filters (BPFs) mainly consist of a physical
coupling of two degenerate modes in a symmetrical ring or patch
resonators, excited by a perturbation element such as the patch struc-
ture along the orthogonal plane of resonators [2]. Due to the simple
structure, the dual-mode ring BPF inherently exhibit spurious re-
sponses at the harmonics of the fundamental passband frequency [2,
3]. However, the requirements of the high performance filter in the
sensitive receiver needs a wider upper stop-band for reducing the
interference from out-of-band signals, and therefore a cascaded low-
pass filter or bandstop filter may be used to suppress the spurious
response at cost of extra insertion loss and size.
Recently, the electromagnetic bandgap (EBG) structure and
defected ground structure (DGS) with periodic arrays of etched on
the ground plane have been investigated for microstrip circuits to
provide the rejection in some frequency band [4, 5]. However, it is
difficult to find equivalent circuits of EBG structures and then
extract all the circuit parameters quickly and accurately. In addi-
tion, it is also difficult to design quickly a specific attenuation pole
at certain frequency region of the conventional H-shaped DGS,
since the shape of DGS is not related to the specific guided-wave
length but related to the lumped elements [3, 6, 7].
In this article, a novel C-shaped EBG cell is proposed and
applied to the spurious suppression of the dual-mode BPF. The
proposed BPF has a microstrip dual-mode square ring resonator on
the top plane and two sets of three C-shaped EBG cells on the
ground plane under the ports 1 and 2, respectively, as shown in
Figure 1. In contrary to the conventional H-shaped DGS, the
attenuation pole frequency of the proposed C-shaped cell can be
easily determined by the ring length, corresponding with the half
guide-wave length. We also extract the equivalent circuit param-
eters of C-shaped EBG cells based on the conventional transmis-
sion theory and then further discuss the proposed DGS cell with

Received 22 March 2006

ABSTRACT: This article proposes a dual-mode microstrip bandpass

filter (BPF) with C-shaped electromagnetic bandgap (EBG) cells etched
on the ground plane for spurious suppression. The C-shaped EBG cell
is modeled as a parallel RLC resonator and the equivalent circuit pa-
rameters are extracted. The relationship between bandgap characteristic
and dimension parameters of C-shaped EBG cell is discussed and the
bandgap characteristic of C-shaped EBG cells on the filter performance
is also investigated. The C-shaped EBG cells add a good stopband-re-
jection mode to the second harmonics of the dual-mode microstrip BPF Figure 1 A 3-D view configuration of proposed dual-mode ring BPF
with suppression of over ⫺40 dB, without affecting the center frequency using simple C-shaped cells

2090 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 48, No. 10, October 2006 DOI 10.1002/mop
 designed on a Duroid 5880 substrate having a thickness of 0.787
mm and a dielectric constant ␧r of 2.2. The dimension parameters
of the single C-shaped cell are radius r ⫽ 5.2 mm (the ring length
correspondence with the half guide-wave length of 4 GHz) and gap
g ⫽ 2 mm. The typical frequency response of conventional DGS
and its equivalent circuit has been studied [8]. However, the
resonant tank was modeled as parallel LC circuit without consid-
ering the lossy element, which usually expresses for lossy media.
Therefore, we tried confidently a modified equivalent circuit to
model the single C-shaped cell based on the circuit concept. Figure
2(b) shows that the equivalent circuit of single C-shaped cell is
expressed as a parallel RLC resonator. The equivalent circuit
parameters can be extracted from ␲-network by using the relation
between the measured S-parameters of fabricated single C-shaped
cell on the Duroid 5880 substrate and the ABCD matrix [9], as
following

共1 ⫹ S 11兲共1 ⫺ S 22兲 ⫹ S 12S 21 Y1

A⫽ ⫽1⫹ , (1)
2S 21 Y2

共1 ⫹ S 11兲共1 ⫹ S 22兲 ⫺ S 12S 21 1

B ⫽ Z0 ⫽ , (2)
2S 21 Y2

where Y1 is the parallel susceptance and Y2 is the series suscep-

tance of the ␲-network, A and B are the elements corresponded
with the ABCD matrix, and Z0 is the characteristic impedance of
the microstrip line. Since the S-parameters for the single C-shaped
cell are complex numbers, the resulting equivalent circuit param-
eters of the ␲-network are also complex. The resulting relations
between the equivalent circuit parameters of the ␲-network and the
equivalent circuit parameters of the proposed single C-shaped cell
are given by

A⫺1 1
Y1 ⫽ ⫽ ⫹ jB p, (3)
B Rp

1
Y2 ⫽ ⫹ jB r, (4)
R0

where Rp ⫽ 1/Re[Y1] denotes the parallel resistance that is due to

Figure 2 (a) Top view, (b) equivalent circuit and (c) comparison of the
frequency response between simulation and equivalent circuit
the step discontinuity and nonuniform current distribution effects
on the ground plane. The imaginary of parallel susceptance Bp can
be neglected because the parasitic effects (e.g. fringing filed and
eddy current at the edge of etched C-shaped EBG cell) are too
small on the ground plane. R0 ⫽ 1/Re[Y2] denotes the resistance
value in the parallel RLC resonance tank and corresponded with a
lossy characteristics within the attenuation pole frequencies of the
single C-shaped cell. The capacitance and inductance of the equiv-
alent circuit are given by [10]
Im[Y2 ]

冉 冊
C0 ⫽ , (5)
different dimensions to observe the bandgap effect. The C-shaped f0 fc
2␲f0 ⫺
EBG cells etched area in the backside ground plane can suppress f0 f0
the spurious response of the dual-mode ring BPF to ⫺40 dB
approximately. The experimental results of the fabricated filter 1
L0 ⫽ , (6)
measured by network analyzer have good agreement with the 4 ␲ 2f 02C 0
simulation results.
where f0 is the attenuation pole frequency and fc is the cutoff
2. EQUIVALENT CIRCUIT OF C-SHAPED CELL frequencies of attenuation pole of the single C-shaped cell. The
To demonstrate the equivalent circuit of single C-shaped cell, a 50 circuit parameters extracted from the measured S-parameters of
⍀ microstrip line with single C-shaped EBG cell etched on the fabricated single C-shaped cell are R0 ⫽ 3.6921 K⍀, L0 ⫽ 2.5126
ground plane, as shown in Figure 2(a). The single C-shaped cell is nH, C0 ⫽ 0.6455 pF, and Rp ⫽ 8.49 K⍀, respectively. By using

DOI 10.1002/mop MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 48, No. 10, October 2006 2091
 2 mm for all cases. As the radius r of the single C-shaped cell
increases, the attenuation pole frequency and cutoff frequency give
a lower frequency. It is suggested that the inductance depends on
the radius of single C-shaped cell. As the radius of single C-shaped
cell increases, the inductance increases and then gives to a lower
attenuation pole frequency and cutoff frequency. Similarly, the
simulated results of single C-shaped cell with different gap dis-
tance g as shown in Figure 3(b). The radius r of single C-shaped
cell is 5.2 mm for all cases. As the gap distance g increases, the
attenuation pole frequency and cutoff frequency give a higher
frequency. It is suggested that the capacitance depends on the
etched gap distance g of the single C-shaped cell. As the etched
gap distance g increases, the capacitance decreases while the value
of inductance is varied slightly. The decreasing capacitance gives
a higher attenuation pole frequency and cutoff frequency. To
further confirm the bandstop effect of the periodic C-shaped EBG
cells, frequency responses as function of the cell numbers of
C-shaped EBG cell with the dimensions of g ⫽ 2 mm and r ⫽ 5.2
mm are shown in Figure 3(c). As number of C-shaped EBG cells
increases, the stopband width varies obviously. It is clear that more
C-shaped EBG cells cause larger bandstop width around nearly
3.5–5 GHz because of the EBG effects of the periodic C-shaped
EBG cells.

3. SIMULATED AND MEASURED RESULTS

A conventional dual-mode ring BPF [6] without C-shaped EBG cells
is designed first to have a center frequency of 2.15 GHz by using the
EM simulator IE3D [11]. The dimensions of designed dual-mode ring
BPF are shown in Figure 1. The used substrate is Duroid 5880 with
thickness of 0.787 mm, a dielectric constant ␧r of 2.2, and loss tangent
tan ␦ of 0.0009. The simulated frequency response of the dual-mode
BPF without C-shaped EBG cells has return loss of ⫺13 dB, insertion
loss of ⫺1.9 dB, and FBW (defined as 3 dB bandwidth over the center
frequency) of 4%. Clearly, the dual-mode BPF without proposed
C-shaped EBG cells has a spurious response of 2f0 around 4 GHz, as
shown in Figure 4. To suppress the spurious response, the first set of
the three C-shaped EBG cells is designed below the port 1 and their
dimensions are the same with those in Figure 3(c). To enhance the
wide stopband of proposed dual-mode BPF, another set of the three
C-shaped EBG cells is designed below the port 2. The radius r ⫽ 4.7
mm and gap distance g ⫽ 0.5 mm of the second set of three C-shaped
EBG cells are designed for having a stopband around 5 GHz. Figure

Figure 3 Simulated frequency response of the single C-shaped cell

analysis with different dimension of (a) radius r (g ⫽ 2 mm for all cases),
(b) gap distance g (r ⫽ 5.2 mm for all cases), and (c) cell numbers (g ⫽ 2
mm and r ⫽ 5.2 mm for all cases)

the extracted element values in circuit simulation tool ADS 2002,

Figure 2(c) shows the comparison of the frequency responses from
the EM simulation and the equivalent circuit. Obviously, the
performance of the equivalent circuit of the single C-shaped cell
has good agreement with EM simulated results.
To understand the effects of the attenuation characteristic of the
single C-shaped cell, we inquire into the simulated frequency
response of the single C-shaped cell analysis with different dimen- Figure 4 Simulated frequency response of the dual-mode ring BPF with
sion of the radius r, as shown in Figure 3(a). The gap distance g is and without the C-shaped EBG cells

2092 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 48, No. 10, October 2006 DOI 10.1002/mop

Figure 5 Simulated and measured frequency response of the dual-mode
ring BPF with C-shaped EBG cells
4 shows the simulated frequency response of the dual-mode BPF with
C-shaped EBG cells. It can be seen that employing the proposed
C-shaped EBG cells etched on the ground plane can well suppress
spurious response of 2f0 from ⫺0.5 dB to around ⫺40 dB, and the
fundamental passband performance is still held.
Measured frequency response of the dual-mode BPF with C-
shaped EBG cells, characterized in an HP 8510C network analyzer
and compared to the simulated response, as shown in the Figure 5.
Measured frequency response at center frequency f0 ⫽ 2.11 GHz
has maximum return loss of ⫺17 dB, minimum insertion loss of
⫺2.5 dB, 3-dB fractional bandwidth of 4.7%, the spurious re-
sponse around 4 GHz with average of ⫺40 dB.
Implications of the above results are now discussed. Out-of-
band characteristic of the dual-mode BPF with proposed simple
C-shaped EBG cells are superior to that without EBG structures. In
addition, the EBG structures may cause errors such as shifting
center frequency or degrading the insertion loss of original de-
signed BPF. For example, in Ref. 4, the center frequency of the
BPF added with the PBG structure was shifted to lower frequency
about 15% corresponding to the original designed center fre-
quency. While the center frequency of our proposed BPF adding
with the C-shaped EBG cells are only 0.4% shifted lower corre-
sponding to the original designed center frequency. Compared
with the simulated results, the measured frequency response
closely matches and verifies the theoretical prediction of the wide
upper bandstop. The superior features indicate that the proposed
BPF has potential to be used in microwave communication sys-
tems.
4. CONCLUSION
A novel dual-mode BPF using C-shaped EBG cells is proposed to
suppress spurious response. The etched areas in the backside
metallic ground plane of C-shaped EBG cells are key points to
have the bandgap effect for suppressing the spurious response of
the dual-mode ring BPF. The relationship between filter frequency
response and dimension parameters of C-shaped EBG cells has
been investigated. The proposed BPF demonstrates the frequency
characteristics with a central frequency f0 ⫽ 2.11 GHz, FBW of
4.7%, and the broad stopband from 2.4 to 6 GHz at the level of
⫺30 dB. The superior features promise that the proposed filter is
potentially to be used in microwave communication system, and
other applications.
DOI 10.1002/mop MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 48, No. 10, October 2006
View publication stats
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© 2006 Wiley Periodicals, Inc.
DESIGN OF SHARP-REJECTION,
COMPACT, AND LOW-COST ULTRA-
WIDEBAND BANDPASS FILTERS USING
INTERDIGITAL RESONATORS
Cheng-Yuan Hung,1,2 Min-Hang Weng,3 Yan-Kuin Su,1,2
Ru-Yuan Yang,1,2 and Hung-Wei Wu1,2
1
Department of Electrical Engineering
Institute of Microelectronics
National Cheng Kung University
Tainan, Taiwan
2
Advanced Optoelectronic Technology Center
National Cheng Kung University
Tainan, Taiwan
3
National Nano Device Laboratories, Tainan, Taiwan
Received 14 March 2006
ABSTRACT: With the rapid development of broadband communications,
sharp rejection and wide bandwidth are very important issues for UWB
applications. In this article, a compact pseudo-interdigital ultra-wideband
filter using the tapped input/output (I/O) and strong coupling is designed
and implemented on FR4 substrate. This filter at center frequency f0 of 3.9
GHz has presented almost very good measured characteristics, including
the bandwidth of 3.1– 4.8 GHz (3-dB fractional bandwidth of 44%), low
insertion loss of ⫺1.6 dB, sharp rejection due to two transmission zeros
in the passband edge created by interstage coupling, and low group
delay varied between 0.2 and 0.5 ns. Experimental results of the fabri-
cated filter show a good agreement with the predicted results. © 2006
Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 2093–2096,
2006; Published online in Wiley InterScience (www.interscience.wiley.
com). DOI 10.1002/mop.21877
Key words: pseudo-interdigital; tapped I/O; transmission zeros; band-
width; passband
2093