Professional Documents
Culture Documents
Electronic Chpter 4
Electronic Chpter 4
181 INTRODUCTION I
In tho p1<'\'lauu:ho1pt,n, "~ Im>< J.·.it "'"h 11>< ,-•·r
or --1•• """"'""' 1hr onl""") /►- r.,.
"'·f''t IUn!l-t11or I" 1h.,, ltirot,&r function tr,nsbtor (HIT). h, n.111\f' ti tfttwnl hnlll I.ht• f,t1,:t th.at ltlc,
m.afnnt)· imd m\non1~ an(L-r» t.'IL! p.srt ln Wph)'tlcal ~ - - ,-..-curt~ 1ni.l,"-• th., dt•\~, "- t\JI,~
ll\ (\l.~: ol Wll·pubr Ir,mJbh,t ooh· m..,1111\ c.1,.,....,.. t.t\l' pU1 in IN' ph\'UC.,I l"ffltl'ti" •,nth1n 1tw-
<ll,,icT Th< 111upnbr lt>Miltar b cocnmonl>· .._.n., u,. fidJ dk'<I tnn>t,l&lf ,,, I Fl In IL'T 1J1o
1,.:Urrm1 1,- CU\trvlk<J b) rkdrk hdd TI11tc~ tt fW'\l m.a.:ri ,1.a*a Oil ttc'ld rii«1 tr,1n,l,ton -'' 111.,. 11
Ill Fig 41
1,1 '"'"'""" r.,lct .m....11,.,_,., 01n or "fflf'') fl'Tl
(u) Th, ln,ul•tod g.11< lk•ld <11,<1 tr.1-tc>r{(G1'£1). II u•l'l>callrJ m,-t.11.,,u.. ..-ntlronduct,r
fu:ld olr«t IISlll<l.•l<V (MO!'ITT or ,lmrlf ~tOS-11. A M()jfff k lur1J~, ,ul,lh-,J,J t,,1u
own•>~·
l•I Ori-it-hon MOSft,,
!bl l.nh.sn«.,,..111 \10SFl"r
W,• ,h.,U a,ruldn llu• JFrT hr,,1, ond 11~11 llw M®TI
Intl
--
,..
•
o<h.lnncl
'"..,.. t.a,,, l!br ~ , . , . _ 5loa lt,r '"""'tut ■ r:itn al tbr dt- l'!>d tlwn•I ti-.- ""1:.
..., al tt, ,t,_.1, ... • , . . oun ~o• , I"...!, d..-1 oum •-•rid::'• ""'"""lniP
"1o
IDU• Ill 11w ,!wn ffli Tl>r ,,_.,s - I -dly""""",, r1.1 .,....,,do,,dj Jl,r a,mr,t ~l M
..,,... ...-,wi!!io..-anrv... 1,.,,,,., .. _...,,, ..IIPllon•ak,,
UIMIJlorlk■ J0..drJMr 1QtZ::C- tdl,p 'V~ t0dlltlt"""" tlW'tffrTM'b'ft2~.dowJI
oci:,<111w,....~lhm•iav-lo..-,._..1romd1.mi,,,...,,,whldl....,. t,,
~-.....iop,,-...
11-it.pw ■aadr,.,,.w.a, --1uo1"9!h'"f"'<l"'-'"'"'vCl'.-1v,
_ _ _ ..,..Vu ._.,-,,,..,aMl"- mo"l""t,md,Mw"- rJ,,cvn,_lt
rJI -,.u d,opP bul la .t:bd "°""'
Mid 11,r prd, di"""' ID, o,lln ,.,._ tA IVc,: 1hr
..,_.,....,,,,__ ,,.,_ltbt...:-.W-l!•tudw111C•~---
IM APPUCATIOHS OF JFET I
0
., .1•~r,.l 0 ..-
on lohN1 b ,'On('l"lt\rdl II \,~• ti\ 1nJ Jru
Thb II u. uall> n·,hu tt,J (• tar 1:1 Ow:- "J'IC'l.:1!1c.1\i
d,ar .._- u.,.- n. lhlt IN) l'tdillir\111
•olui;<-vwnd IOIO I<\' 11,c. ...,o/ u-.,ll urc,u o/ 11,t ~ n..,..'Ut o/J nln -ltv ff)'
mln
io.l, 1gr, J'fl. -•lly .h11 ,,1n i,,,.. .,ldf 1-,u
Lo,p tqt,1 C hum 10 IJl iu huod rnlt •~ ""Ii·' .,tun,.
.c:tM<t ,_,_
Oil TnnM ond• rf•.nt t ta..J for •ulll. U CWN
jt" hM, 1hr dr-.1, (Wff llt ll irwa und t, tr~u c:u: ncw
Thar «iotn ~ 1h.n Uw ~k uliiUl O\Yt'
-c., JI u, br Jcltn t,l .t, ,OU. ~, IHl'U lff71
-IM.T., ..
n,, , _ . , . , ,..,,.m,,,~1 --~r M"t f 'P'"' "'S,...,.,. • ,., ,.,,, o! - du"l
l.lo'c.,l.d _
t "···
, , _ , . , roh'S' Tiu! It
MM ll 1.llpl. IO Utt ..wll m1n,v
........
........
• ,. o o I • • •
_.lJ lc:t-:-.,.::..8..
G
..
lc,N_. • 11
G
~Ill-----..
s
...
-lO - TS
u • ..
0
,., Vttl() Ir
t11-<.1'. pnc,xolam,t.,- b 0 1n<luffldMil>l ~ ,..SU
TfJI• of MOSFETS
nu-~ ml p<t,.um,J MOSl'lrr ue lurdic:r ol two l)t-
(1) Tht Enh.\otttnenl MOSFET
fill ll1't D,,pll'~on MOS~cl'
DIFFERENCE BETWEEN FET AND BJT I
Follo\ving are the main points of difference beh\•een field effect transistor and bipolar transistor.
FIT ~T 7
1. Its operation depends upon the flo.v of 1. Its operation depends upon the flow of -
majority came.rs onJy. both the majority and minority earners.
2. High input resistance. 2. Lo~ input resistance as compared toFET.
3. BasicaJJy voltage control device. 3. Bas1caJly current controlled device.
4. Less noisy. 4. More noisy.
5. The carriers move through the channel by 5. Carriers move through the base by the
the drift p~ocess. process of diffusion.
6. Thermally more stable. 6. Thermally Jess stable.
Exampl e 4.6. A co111nzon sour,ce FET amplifier has a load resistance R 1 = 500 Kn is the a.c. drain
resistance ( = r4) and am1,lificai1011 fnclor ( = µ) of the FET are 100 k.Q and 24 respectively. Calcu1JZtl 1M
voltage gain of the an,pli.fier. (P.U. 2001}
S o lution . Given, RL = 500 k:fl, rd= 100 k!l, µ = 24, Av=?
, _ µR 1 _ 20x500xl0 3 12000
Weha~e IAv f - r4+RL - 100x]03 +500x10 3 = 600 = 20 Ans.
Omlh
·~ '
t11ni..o ,, •UOSFtT
A - - 1 "P" o1 \IO,ITT c.m t,, mad, 11, ., lht 'bl...- .-'MT cl "4 UD • ~ II
dillw,J t.t,....,. L._, IOWft and tht drAIII. wt:I, ,i,,. """''IT' ol Ullf""IJ .. l&ll'd for tlw ~
a.I - dUlmlm. \\ilh t!,n dn-n, c t ~ dra;n ammt le.,,., Oo,., lo<,.,., p ~
_,.,.,. "c. •II. u t:.r ;:a» •all.Ip- .. .,,.J, pa,,oli\<.rqotr.•~ lit lndsx>d ln111t
<Nnnrl ~ U,, 5'l: ol ti..- p!r ai-,t In Fiji I~~ tlw <Utfflll In & m b~.. _,
_ , , . omen ho!,. k>r • p-t)'f'< """""11, tho - , J ""S'h•< du,:., :NU lllr d>alrlli ....
m>d"'1r<·~• ...i t/lo--Jropo .. \'g.li"".lt..- r-i,,e T h t ~ o f c:hq,,
.. lbcdwmcl ....,.,. ... fflffl!'Y~ol ffl.llCll\1l"wttn. .!,id, ...-.....,,., lo<"""""""~
· · · - \OifFr XOit In R;. l.!! Iha~1,,,c,.,,. ol tht ,.ius,, d"'f' du,., lht d D U \ ~ ...
<h.m.-wlll'glal\-lht.ii:&ona - ~ -tlw rcgiannoartht-. Thi. pba ........,
is-.,.,... IDUul ol ~""<Ufflng U'I • JfF[ •l ,ht Jrun...J ol dllech.amcl. A>• """"of
--0-
b.:~ lht1'11L! ............ ~ g j th.Jrrlmm"""'• ~ll.'6ni ...i I),, !TIT ... qwt,-.i.,
l'"'
-- I
f"-s.-L:::.p()Wtn.!~M0SRT11clllh.qj! efll•,.._.•,-,-.
A MOSFET ol tl..-d~I)'!" fU"' J..a,kd .,., .i,ot,,aprr:,l<d aun.mNnmnCI\I mode.
II is only.,.._. 10 •pph• l nt'g>b\-. pl\' wol~ to that pallb"' di.a,,......,
tllduttd uilO tho f"hobXol •f wt'II~ '«Outt ~t.-i( t:1,., ~m"' 1\-..-h
l'')l"'d,.w,cl, In du.-. tho<onduan"II\ ol lll<ch.wwl~ u"1 hC\IITCftl ri>oON>\·t ns11tll\tt d""""" •llh .., - "'i.,;.'n on_,- wt,m
las-
-1\1
0t, \'Oll-,~T< d\u""""'to UI du, ,i..,.., :m,, m.lol<d ,n Rg. U.3 lot .nd lht tnndt, . -....1 11- dn _ _ ., • thin ""i;IN>)•uJ ..
~-.
Ol(..,.c:~.- • - • f.tam•t
..
........
---·----
.... light Jtr<,,d.mt ......... (I.DR). 1lwy ,..,_.. ",mill
the.,• ., ~-oil lf'ffl'III f.1"11"., tht hum.,n l'J• .nJ ,,. ' - - - - - -- - - '
~\'l,'.Jcl)•~ln,,rr...u.w\\-hcftthist)"P'·of,~-·
....,..... ""'l"'~
, .. u • ~ · ...
10
...
15 • J_-• •
t..... \\ Ith pN>Urtn-r <ido for ,><IJl\l pNO«- •JI-or rb,n< """' "") I'< mdu.W ~""'
-,d,ot lbt' >ll1p ,U\' bn,ughl OUI .,.,,,_~I""....,•. lhr ...... ffii l.11>
Vcilt/'J .....
....
~-v.M
-3 t"hococondu<ti,t ttll dmalt
Th, dmul di.tjtr.un kW dw • rt,o,,-...-l"'-11\' cell u .h .,_.., 0\ fig 4l5