Umm Al-Qura University

College of Engineering and Islamic Architecture

Electrical Engineering Department

ELECTRONICS (I) LAB REPORT

EXPERIMENT DATE: Wednesday, Oct 27, 2021

SUBMISSION DATE: Wednesday, Nov 10, 2021

Experiment #5:
BJT Characteristics

Prepared by
Monthir Rakkah 439004590
Turki Al-harbi 441002080

SECTION #3
 Report by:
Monthir Rakkah
Turki Al-harbi
Experiment: #5 TEAM: #7
BJT Characteristics

Part I: Characteristics of the Emitter-base Junction:

1- Construct the circuit as shown in Fig. 1.

2- Connect the power supply and set Vcc= 15V.

3- Connect the other power supply and set V BB = 6V.

4- Connect the DMM to measure IB as shown in Fig. 1.

5- Connect another DMM to measure lc as shown in Fig. 1.

6- Set the base current I B = 100 µA, by adjusting the variable resistor R B .

7- Set the collector current Ic as per Table-I by adjusting the variable resistor Rc and
measure the VCE using CRO probe between collector and ground terminals and
record it in the Table-I.

8- Repeat the measurement of VCE for each value of lc and record the readings in
the Table-I.

9- Again, Set the base current I B=200µA, 300µA, 400µA and S00µA by adjusting the variable
resistor RB.

10- Set the collector current Ic as per Table-I and measure the V CE as above for each set of
IB.

11- Plot the lc Versus V CE for all the five values of the I B ,
 Report by:
Monthir Rakkah
Turki Al-harbi
Experiment: #5 TEAM: #7
BJT Characteristics

Table I: Readings

IB= 100 µA
Rc(Ω) 0 100 300 500 700 1K 2K 3K
VCE(V) 11.69 7.21 3.5 1.21 0.341 0.7 0.41 0.3
Ic(mA) 24.4 23 21.5 18.48 16.2 13.5 7.08 4.78
IB= 200 µA

Rc(Ω) 0 100 300 500 700 1K 2K 3K

VCE(V) 45.9 10.2 3.6 0.93 0.241 0.17 0.125 0.105
Ic(mA) 54.01 41.8 35.5 27.1 20.5 14.44 7.3 4.88

IB= 300 µA
Rc(Ω) 0 100 300 500 700 1K 2K 3K
VCE(V) 13.9 8.4 1.94 0.270 0.183 0.150 0.110 0.092
Ic(mA) 63.7 58 41.4 28.5 20.58 14.5 7.3 4.89

IB= 400 µA

Rc(Ω) 0 100 300 500 700 1K 2K 3K

VCE(V) 14 7.7 1.22 0.213 0.164 0.137 0.1 0.087
Ic(mA) 75 65.4 43.9 28.6 20.6 14.5 7.3 4.88

IB= 500 µA
Rc(Ω) 0 100 300 500 700 1K 2K 3K
VCE(V) 14 7.23 0.813 0.198 0.155 0.130 0.096 0.081
Ic(mA) 80.6 69.1 45.2 28.7 20.6 14.53 7.32 4.89
 Report by:
Monthir Rakkah
Turki Al-harbi
Experiment: #5 TEAM: #7
BJT Characteristics

I. What is the type of the transistor you used here?

n – p – n type.

2. What are different regions (modes) of operation of the

transistor?

A- Saturation. B- Active. C- Inverse active. D- cut off.

3. In what region the transistor can be used as an amplifier?

Active region.

4. In what region the transistor remains OFF?

Saturation region.

5. In what region the transistor remains ON?

Cutoff region.

7. What is value of VCE if the transistor is in saturation mode of

operation?

VCE = VCE(sat)