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A Novel Linearly Tunable MEMS Variable Capacitor
A Novel Linearly Tunable MEMS Variable Capacitor
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Abstract
The linearly tunable microelectromechanical systems (MEMS) capacitor
with 608 comb fingers changing the overlap area is developed. Unlike the
conventional micromachined capacitor using the gap between the parallel
plates, the proposed capacitor adopts the overlap area as the tuning
parameter. In addition, the tuning range of the proposed capacitor has large
nominal capacitance C0, whereas the parallel plates have a range of C0/3
theoretically. The 6-µm-thick single-crystal silicon MEMS structure is
bonded to the pyrex glass substrate using the glass–silicon anodic bonding
technique and the chemical mechanical polish (CMP) to make the desired
capacitor. Single-crystal silicon was chosen as a capacitor structure material
because it has excellent mechanical properties greater than those of
polysilicon and aluminium as the structure material, and the pyrex glass is
used as a substrate instead of silicon to reduce the RF losses through the
substrate over the high-frequency range. The measured capacitor shows a
nominal capacitance of 1.4 pF, and 10% tuning range at 8V. The capacitor
model is also developed to explain the parasitic effect over the
high-frequency range and proved by using the Serenade software of the
Ansoft Corporation.
2. Design
2.1. RF design
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S Seok et al
silicon s ilic o n
glas s
glass
(a) (b)
s ilic o n silicon
glas s glass
(c) (d)
Figure 2. Process sequence. (a) Etching of silicon and gold patterning: the gap is defined by dry etching, the electrodes for tuning and PAD
feed-through is patterned. (b) Bonding of silicon and glass: to make the designed capacitor, the anodic bonding between silicon and the
pyrex glass is performed. (c) CMP of the bonded silicon wafer: The designed thickness of the silicon is made by the CMP process. (d) ICP
etching of the silicon and Au evaporation: to make the capacitor finally, silicon dry etching is performed and the Au signal line for RF
frequency range is evaporated.
The prototype area-varying tunable capacitor is designed made by the ratio of HCl:HNO3 = 3:1 and Cr is removed
to be operated over the RF. The gold (Au) is used as the by CR7. (c) The silicon and glass are bonded using
signal line because the resistance of the signal line reduces the anodic bonding process. The bonding temperature is
the quality factor of the capacitor. The pad of the RF device 430 ◦ C and the applied voltage on the glass is –800 V.
should be designed specially to make the RF signal through (d) The backside of the bonded wafer is etched in the
the RF devices pass well. tetramethyl ammonium hydroxide (TMAH) solution until the
thickness of the silicon is 10 µm. The wet etched silicon
wafer is polished to the desired thickness by CMP. (e) Finally,
3. Fabrication the silicon structure is etched by using the ICP deep etcher to
implement the 608 comb fingers of the capacitor. After that,
The prototype capacitor is fabricated using the silicon-glass Au is evaporated on the wafer for the RF signal line.
bonding process and chemical mechanical polish (CMP). The process sequence mentioned above is better than
The process sequence is shown in figure 2 which is as conventional surface micromachining for making the MEMS
follows: (a) 3-µm-thick silicon is etched to make the control capacitor, which consists of the three polysilicon layers. This
gap by using the ICP deep etcher. This gap determines process needs at least five masks to make the capacitor. But
the tuning range of the area-varying tuning capacitor. (b) the developed process needs only three masks, which results
Cr (500 Å) and Au (4500 Å) are evaporated consecutively in a simpler process and cost reduction. The SEM picture of
and patterned on the pyrex glass substrate to make the the fabricated capacitor is shown in figure 3. The designed
tuning electrode. Au is etched using the etchant which is 608 comb fingers are implemented successfully.
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A novel linearly tunable MEMS variable capacitor
10
10Ω C d = 1.4 pF 500 Ω
C p = 1 pF C Cp = 0.2 pF
2 GHz
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S Seok et al
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