Power Substrate Young

backgro Distance
(W)/Pow (type / Substrate SH argon Depositio Film Surface ’s
Authors Depositio Substrate Target to Adhesion Hardness
[ref] n system
er surface Temperat
bias (-V)
rotati und Pressure
Substrate
n Rate Thicknes Roughnes
(N) (GPa)
modul Notes
Density roughnes ure (◦C) on pressure (mbar) (nm/min) s (µm) s (nm) us
(cm)
(W/cm2) s) (GPa)

Co Ti content
sputt 17
crystallite
ering C Oxide 35 %
(Vacu globular
(Dc) const silicon
um 41
Ti 150 300 20rp columnar
and 200 m 2.5×10
−3
7 17.6 205
(99.9 W nm structure
2019 x=0.47
95 %), Ti 40 oxide
n.d.) to 0.98
c W layer
(99.9 stoichio
99%) metry,
Co
Column
sputt
C ar
ering
(Sedlá const width
(Dc) .75
17.57
čková 150 .05-.0 204.9 10-100
Ti Si 200 7 - -- +-
et al. W pa 7 2 nm
(99.9 2.24
n.d.) Ti 40 Thickne
95 %),
W ss of c
c(99.9
2-5 nm
99%)
(Baláz Co C Oxide 200 20 .25 pa 7 .06 300 - - 18 205 the
atomic
si et sputt const silicon rp nm / s nm layers of
al. ering 150 (001) m TiC

n.d.) (Dc) W 300 column

in which
Ti Ti 40 nm the atomic
(99.9 oxide distance is
15-25 nm
95 %), layer and ~5 nm
thin
c(99.9 amorphou
99%) s carbon
matrix
 between
columns
Co
sputt
ering Ti 70- No c- ti at
(Foga
(Dc) 150w biase 26 at 58-85
rassy 3*10
−8
2,5*10−3
Ti C 25- 25 d or mbar ti 67 240 at %
et al. mbar
(99.9 150 heate at % h- ti 86
n.d.)
95 %), W d at %
c(99.9
99%)