'\,?

0~ t) (j 0-- 2-,
EXPERIMENT NO. 4 Energy Gap

~ations:
011se Voltage Temp. T rRes1Stivity,
.. 10Jrr log10 p
~ TeJJJP·
(volts) (K) p (Il-cm.) (K-1)
(°C)
...... 1so°C :y, :S x,;~ t ~3 0 0 9.:Jt t,36 y 0 --0~.)

L--- -1401>c _2
/J X ID 4{' .L 14'<! 2- 'f2) c::,o ~
2. '

4o~ .I, lJ i
-------
t-- 130°C ~/4'Y r()
-1..
L •4 2. / rf , /1~
3.
1201>c 3J~ C!> :X,a
4. "J.-,x t.l Jd '\ I)" J.·48 I

5.
11
110 c <jJ '\l(; 3~:3 z ,s.T .! -.~4- '11 e:/~CJ-1
i-
6. 100°c 18.e x ro-2 34-3 ; .~.,;.c, .E /IO -C,iS'"\°.,
(),(ti)
7. 90°c -.2..
('? XI tJ 3 z(3 4 · :J., l6 2 (((j

80°C ~ -(,)((f' 3~3 i<, 1019 2 · -? rt O· k)t;

8. ,,...
10°c . ~.?.
.34-s &r i trci _; 6 w"f::_ 0 ~:.; I
9. ~('t<{J
60°C /0•0,,1 3,0) ~ I - {j 0
10. 3 333

Distance between the adjacent probes (s) = 0.20 cm.

Thickness of the crystal (w) = 0.050 cm. .

Calculations:
eV .
Energy gap = E
8
= 0.396 x slope = 1
""i , i2- l
Result: The forbidden energy gap in the given semiconductor material is found to be

~-~ ( eV.

Precautions:
1. The Ge crystal is very brittle . Therefore use only the minimum pressure required for

proper electrical contac.t s.

2· Observations should be recorded during cooling, so that heat gets uniformly dissipated

in the oven.

40
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c{! ( 'J 4o 0 ')2..,
EXPERIMENT NO. 4 Energy Gae_

A~ ; ("' , pv /YI.)) 1\1"'~ I a LJW.f,,;iwiJ.,< l w d)I''" {c: p,

r.~ 1.J.,,-,/ • "')J.v0,U. ~v1J_/:iJ

1
eu/'l"N .I,' 1 ~ -< • ,. o 1 ~1 ._ - •

frj r , .
4 ..::. "~c,d o-u'
- .

Department of A3 '. W'/"1 9J&:& · h by ::r

pphed kysics YCCE, Nagpur.
41
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