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TK20J50D: Switching Regulator Applications
TK20J50D: Switching Regulator Applications
TK20J50D: Switching Regulator Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
TK20J50D
Switching Regulator Applications
Unit: mm
15.9 MAX. Ф3.2 ± 0.2
4.5
2.0
1.0
• High forward transfer admittance: |Yfs| = 8.5 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
20.0 ± 0.3
3.3 MAX.
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
2.0
9.0
20.5 ± 0.5
2.0 ± 0.3
4.8 MAX.
+0.3
0.6 -0.1
1.8 MAX.
Drain-source voltage VDSS 500 V
Gate-source voltage VGSS ±30 V
1 2 3
2.8
DC (Note 1) ID 20
Drain current A 1. Gate
Pulse (Note 1) IDP 80 2. Drain(heat sink)
3. Source
Drain power dissipation (Tc = 25°C) PD 280 W
Single pulse avalanche energy
JEDEC ⎯
EAS 470 mJ
(Note 2)
JEITA SC-65
Avalanche current IAR 20 A
TOSHIBA 2-16C1B
Repetitive avalanche energy (Note 3) EAR 28 mJ
Weight : 4.6 g (typ.)
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics Symbol Max Unit
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
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TK20J50D
Electrical Characteristics (Ta = 25°C)
Marking
Note 4: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
TOSHIBA Part No.
(or abbreviation code)
Please contact your TOSHIBA sales representative for details as to
K20J50D
environmental matters such as the RoHS compatibility of Product.
Lot No.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
Note 4
hazardous substances in electrical and electronic equipment.
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TK20J50D
ID – VDS ID – VDS
20 50
Common source 8 7.5 10 8
Tc = 25°C
10 7 Common source
Pulse Test
16 40 Tc = 25°C
Pulse Test
(A)
(A)
7.5
6.7
ID
ID
12 30
Drain current
Drain current
6.5
7
8 20
6.5
VGS = 6 V
4 10
VGS = 6 V
0 0
0 2 4 6 8 10 0 10 20 30 40 50
40 8
ID (A)
VDS
30 6
Drain-source voltage
Drain current
ID = 20 A
20 4
25
10
10 100
2
5
Tc = −55 °C
0 0
0 2 4 6 8 10 0 4 8 12 16 20
10 Tc = −55 °C
RDS (ON) (Ω)
25
100
VGS = 10, 15 V
1
0.1 0.1
0.1 1 10 100 0.1 1 10 100
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TK20J50D
10
RDS (ON) (Ω)
0.6
20
10
0.4 10
ID = 5 A 1 5
0.2 3
1 VGS = 0 V
0 0.1
−80 −40 0 40 80 120 160 0 −0.3 −0.6 −0.9 −1.2 −1.5
Pulse Test
4
1000
(pF)
Coss
Gate threshold voltage
3
Capacitance C
100
10
Common source Crss
1
VGS = 0 V
f =1MHz
Tc = 25°C
1 0
0.1 1 10 100 −80 −40 0 40 80 120 160
VDS
Drain power dissipation PD (W)
(V)
VGS (V)
400 200 16
300
VDS
VDD = 100 V
300 400 12
Drain-source voltage
Gate-source voltage
200
200 8
VGS Common source
ID = 20 A
100 Tc = 25°C
100 4
Pulse Test
0 0 0
0 40 80 120 160 0 20 40 60 80
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TK20J50D
rth – tw
10
0.2
0.1 PDM
SINGLE PULSE
0.1
0.05 t
0.02
T
Duty = t/T
0.01
Rth (ch-c) = 0.446 °C/W
0.01
10μ 100μ 1m 10m 100m 1 10
400
ID max (continuous) 1 ms *
10
300
Avalanche energy
Drain current ID (A)
1
200
DC OPERATION
Tc = 25°C
100
0.1
0
25 50 75 100 125 150
0.01
* Single pulse Tc=25°C Channel temperature (initial) Tch (°C)
Curves must be derated
linearly with increase in
VDSS max
temperature.
0.001
1 10 100 1000 BVDSS
15 V
Drain-source voltage VDS (V)
IAR
−15 V
VDD VDS
RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 2.0 mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠
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TK20J50D
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