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HT24LC02: CMOS 2K 2-Wire Serial EEPROM
HT24LC02: CMOS 2K 2-Wire Serial EEPROM
Features
· Operating voltage · Automatic erase-before-write operation
- 2.2V~5.5V for temperature 0°C to +70°C · Partial page write allowed
- 2.4V~5.5V for temperature -40°C to +85°C · 8-byte Page write modes
· Low power consumption · Write operation with built-in timer
- Operation: 5mA max. · Hardware controlled write protection
- Standby: 5mA max. · 40-year data retention
· Internal organization: 256´8
· 106 erase/write cycles per word
· 2-wire serial interface
· Commercial temperature range (-40°C to +85°C)
· Write cycle time: 5ms max.
· 8-pin DIP/SOP/TSSOP package
General Description
The HT24LC02 is a 2K-bit serial read/write non-volatile low power and low voltage operation are essential. Up
memory device using the CMOS floating gate process. to eight HT24LC02 devices may be connected to the
Its 2048 bits of memory are organized into 256 words same 2-wire bus. The HT24LC02 is guaranteed for 1M
and each word is 8 bits. The device is optimized for use erase/write cycles and 40-year data retention.
in many industrial and commercial applications where
A 0 1 8 V C C
S C L I/O H V P u m p
C o n tro l A 1 2 7 W P
S D A L o g ic
A 2 3 6 S C L
X
V S S 4 5 S D A
D E E P R O M
M e m o ry E A rra y H T 2 4 L C 0 2
W P C o n tro l C
L o g ic 8 D IP -A /S O P -A /T S S O P -A
P a g e B u f
Y D E C
A d d re s s
A 0 ~ A 2 S e n s e A M P
C o u n te r
R /W C o n tro l
V C C
V S S
Pin Description
Pin Name I/O Description
A0~A2 I Address inputs
SDA I/O Serial data inputs/output
SCL I Serial clock data input
WP I Write protect
VSS ¾ Negative power supply, ground
Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those
listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil-
ity.
D.C. Characteristics
Test Conditions
Symbol Parameter Min. Typ. Max. Unit
VCC Conditions
Note: These parameters are periodically sampled but not 100% tested
A.C. Characteristics
Standard Mode* VCC=5V±10%
Symbol Parameter Remark Unit
Min. Max. Min. Max.
fSK Clock Frequency ¾ ¾ 100 ¾ 400 kHz
tHIGH Clock High Time ¾ 4000 ¾ 600 ¾ ns
tLOW Clock Low Time ¾ 4700 ¾ 1200 ¾ ns
tr SDA and SCL Rise Time Note ¾ 1000 ¾ 300 ns
tf SDA and SCL Fall Time Note ¾ 300 ¾ 300 ns
After this period the
tHD:STA START Condition Hold Time first clock pulse is 4000 ¾ 600 ¾ ns
generated
Only relevant for
tSU:STA START Condition Setup Time repeated START 4000 ¾ 600 ¾ ns
condition
tHD:DAT Data Input Hold Time ¾ 0 ¾ 0 ¾ ns
tSU:DAT Data Input Setup Time ¾ 200 ¾ 100 ¾ ns
tSU:STO STOP Condition Setup Time ¾ 4000 ¾ 600 ¾ ns
tAA Output Valid from Clock ¾ ¾ 3500 ¾ 900 ns
Time in which the bus
must be free before a
tBUF Bus Free Time 4700 ¾ 1200 ¾ ns
new transmission can
start
Input Filter Time Constant Noise suppression
tSP ¾ 100 ¾ 50 ns
(SDA and SCL Pins) time
tWR Write Cycle Time ¾ ¾ 5 ¾ 5 ms
Note: These parameters are periodically sampled but not 100% tested
* The standard mode means VCC= 2.2V to 5.5V at Ta= 0°C to +70°C, VCC= 2.4V to 5.5V at Ta= -40°C to +85°C
For relative timing, refer to timing diagrams
Functional Description
· Page write
S e n d W r ite C o m m a n d
The 2K EEPROM is capable of an 8-byte page write.
A page write is initiated the same as byte write, but the
S e n d S to p C o n d itio n
microcontroller does not send a stop condition after to In itia te W r ite C y c le
the first data word is clocked in. Instead, after the
EEPROM acknowledges the receipt of the first data
S e n d S ta rt
word, the microcontroller can transmit up to seven
more data words. The EEPROM will respond with a
zero after each data word received. The S e n d C o tr o ll B y te
w ith R /W = 0
microcontroller must terminate the page write se-
quence with a stop condition.
The data word address lower three (2K) bits are inter-
(A C K = 0 )? N o
nally incremented following the receipt of each data
word. The higher data word address bits are not incre-
mented, retaining the memory page row location (re- Y e s
fer to Page write timing). N e x t O p e r a tio n
· Acknowledge polling
Acknowledge Polling Flow
To maximise bus throughput, one technique is to allow
· Current address read
the master to poll for an acknowledge signal after the
start condition and the control byte for a write com- The internal data word address counter maintains the
mand have been sent. If the device is still busy imple- last address accessed during the last read or write op-
menting its write cycle, then no ACK will be returned. eration, incremented by one. This address stays valid
The master can send the next read/write command between operations as long as the chip power is main-
when the ACK signal has finally been received. tained. The address roll over during read from the last
byte of the last memory page to the first byte of the first
· Write protect
page. The address roll over during write from the last
The HT24LC02 has a write-protect function and pro- byte of the current page to the first byte of the same
gramming will then be inhibited when the WP pin is page. Once the device address with the read/write se-
connected to VCC. Under this mode, the HT24LC02 is lect bit set to one is clocked in and acknowledged by
used as a serial ROM. the EEPROM, the current address data word is seri-
· Read operations ally clocked out. The microcontroller should respond a
The HT24LC02 supports three read operations, No ACK (High) signal and following stop condition (re-
namely, current address read, random address read fer to Current read timing).
and sequential read. During read operation execution,
the read/write select bit should be set to ²1².
B y te W r ite T im in g
D e v ic e a d d r e s s W o rd a d d re s s D A T A
S D A S A 2 A 1 A 0 P
S ta rt R /W A C K A C K
A C K
S to p
P a g e W r ite T im in g
D e v ic e a d d r e s s W o rd a d d re s s D A T A n D A T A n + 1 D A T A n + x
S D A S P
S ta rt A C K A C K A C K A C K
S to p
C u r r e n t R e a d T im in g
D e v ic e a d d r e s s D A T A
S to p
S D A S A 2 A 1 A 0 P
S ta rt A C K N o A C K
R a n d o m R e a d T im in g
D e v ic e a d d r e s s W o rd a d d re s s D e v ic e a d d r e s s D A T A
S to p
S D A S A 2 A 1 A 0 S P
A C K A C K A C K N o A C K
S ta rt S ta rt
S e q u e n tia l R e a d T im in g
D e v ic e a d d r e s s D A T A n D A T A n + 1 D A T A n + x
S to p
S D A S P
S ta rt A C K A C K N o A C K
Timing Diagrams
tf tr tH IG H
tL O W
S C L
tS U :S T A tH D :S T A tS U :D A T tS U :S T O
tH D :D A T
S D A tS P
tB U F
tA A
S D A
V a lid V a lid
O U T
S C L
S D A 8 th b it A C K
W o rd n tW R
S to p S ta rt
C o n d itio n C o n d itio n
Note: The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the valid start
condition of sequential command.
Package Information
8-pin DIP (300mil) Outline Dimensions
8 5
B
1 4
D
= I
E G
Dimensions in mil
Symbol
Min. Nom. Max.
A 355 ¾ 375
B 240 ¾ 260
C 125 ¾ 135
D 125 ¾ 145
E 16 ¾ 20
F 50 ¾ 70
G ¾ 100 ¾
H 295 ¾ 315
I 335 ¾ 375
a 0° ¾ 15°
8 5
A B
1 4
C '
G
D H
E F =
Dimensions in mil
Symbol
Min. Nom. Max.
A 228 ¾ 244
B 149 ¾ 157
C 14 ¾ 20
C¢ 189 ¾ 197
D 53 ¾ 69
E ¾ 50 ¾
F 4 ¾ 10
G 22 ¾ 28
H 4 ¾ 12
a 0° ¾ 10°
8 5
E 1
1 4
E
D
L
A A 2
C G
e B A 1 L 1
R 0 .1 0 y
(4 C O R N E R S )
Dimensions in mm
Symbol
Min. Nom. Max.
A 1.05 ¾ 1.20
A1 0.05 ¾ 0.15
A2 0.95 ¾ 1.05
B ¾ 0.25 ¾
C 0.11 ¾ 0.15
D 2.90 ¾ 3.10
E 6.20 ¾ 6.60
E1 4.30 ¾ 4.50
e ¾ 0.65 ¾
L 0.50 ¾ 0.70
L1 0.90 ¾ 1.10
y ¾ ¾ 0.10
q 0° ¾ 8°
D
T 2
A B C
T 1
SOP 8N
Symbol Description Dimensions in mm
A Reel Outer Diameter 330±1.0
B Reel Inner Diameter 62±1.5
13.0+0.5
C Spindle Hole Diameter
-0.2
D Key Slit Width 2.0±0.15
12.8+0.3
T1 Space Between Flange
-0.2
T2 Reel Thickness 18.2±0.2
TSSOP 8L
Symbol Description Dimensions in mm
A Reel Outer Diameter 330±1.0
B Reel Inner Diameter 62±1.5
13.0+0.5
C Spindle Hole Diameter
-0.2
D Key Slit Width 2.0±0.5
12.8+0.3
T1 Space Between Flange
-0.2
T2 Reel Thickness 18.2±0.2
P 0 P 1
D t
F
W
B 0
C
D 1 P
K 0
A 0
SOP 8N
Symbol Description Dimensions in mm
12.0+0.3
W Carrier Tape Width
-0.1
P Cavity Pitch 8.0±0.1
E Perforation Position 1.75±0.1
F Cavity to Perforation (Width Direction) 5.5±0.1
D Perforation Diameter 1.55±0.1
D1 Cavity Hole Diameter 1.5+0.25
P0 Perforation Pitch 4.0±0.1
P1 Cavity to Perforation (Length Direction) 2.0±0.1
A0 Cavity Length 6.4±0.1
B0 Cavity Width 5.20±0.1
K0 Cavity Depth 2.1±0.1
t Carrier Tape Thickness 0.3±0.05
C Cover Tape Width 9.3
TSSOP 8L
Symbol Description Dimensions in mm
12.0+0.3
W Carrier Tape Width
-0.1
P Cavity Pitch 8.0±0.1
E Perforation Position 1.75±0.1
F Cavity to Perforation (Width Direction) 5.5±0.5
D Perforation Diameter 1.5+0.1
D1 Cavity Hole Diameter 1.5+0.1
P0 Perforation Pitch 4.0±0.1
P1 Cavity to Perforation (Length Direction) 2.0±0.1
A0 Cavity Length 7.0±0.1
B0 Cavity Width 3.6±0.1
K0 Cavity Depth 1.6±0.1
t Carrier Tape Thickness 0.3±0.013
C Cover Tape Width 9.3