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Semiconductor KTA1661: Technical Data
Semiconductor KTA1661: Technical Data
FEATURES A
C
High Voltage : VCEO=-120V.
H
High Transition Frequency : fT=120MHz(Typ.). G
B
J
E
Small Flat Package.
DIM MILLIMETERS
Complementary to KTC4373. A 4.70 MAX
D D B _ 0.20
2.50 +
K C 1.70 MAX
D 0.45+0.15/-0.10
F F
E 4.25 MAX
F _ 0.10
1.50 +
G 0.40 TYP
MAXIMUM RATING (Ta=25 ) H 1.75 MAX
1 2 3
J 0.75 MIN
CHARACTERISTIC SYMBOL RATING UNIT K 0.5+0.10/-0.05
Type Name
D
I C - V CE h FE - I C
-800 1k
COMMON EMITTER
COLLECTOR CURRENT I C (mA)
COMMON EMITTER
A
A
VCE =-5V
m
-10m
500
-7
Ta=25 C
DC CURRENT GAIN h FE
-5mA
-600 300
-4mA Ta=100 C
Ta=25 C
-3mA
-400 100 Ta=-25 C
-2mA
50
-200 I B=-1mA 30
0mA
0 10
0 -4 -8 -12 -16 -20 -3 -10 -30 -100 -300 -1k
VCE(sat) - I C I C - V BE
COLLECTOR-EMITTER SATURATION
-0.5 -1.0
COLLECTOR CURRENT I C (mA)
-0.8
-0.6
Ta=100 C
Ta=-25 C
Ta=25 C
-0.1
C -0.4
00
=1
-0.05 Ta
Ta=25 C -0.2
Ta=-25 C
-0.02 0
-3 -10 -30 -100 -300 -1k 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V)
-3k 1.2
I C MAX(PULSE) 1 MOUNTED ON CERAMIC
COLLECTOR CURRENT I C (mA)
1
I C MAX SUBSTRATE(250mm 2 x0.8t)
1m
m 2 Ta=25 C
10 s
-300 DC 0m
OP s 0.8
ER
-100 AT
IO
N 0.6 2
-30
SINGLE NONREPETITIVE 0.4
-10 PULSE Ta=25 C
CURVES MUST BE DERATED
-3 LINEARLY WITH INCREASE 0.2
IN TEMPERATURE
-1 0
-0.3 -1 -3 -10 -30 -100 -300 0 20 40 60 80 100 120 140 160