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fully edited. Content may change prior to final publication. Citation information: DOI 10.1109/TIE.2021.3139185, IEEE
Transactions on Industrial Electronics
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New Discontinuous Space Vector
Modulation Strategies for
Impedance-Source Inverter with Superior
Thermal and Harmonic Performance
Ping Liu, Senior Member, IEEE, Jie Xu, Meidi Sun, Jing Yuan, Member, IEEE, Frede
Blaabjerg, Fellow, IEEE
 ST
Abstract— Impedance-source inverters (ISIs) provide a
promising single-stage power conversion with boost-buck
capabilities and inverter legs short-circuit immunity. To
achieve superior thermal and output harmonic
performance, two novel discontinuous modulation
strategies for the three-phase quasi-Z source inverter
(qZSI), called the maximum-boost discontinuous SVM
(MBDSV) and the simple-boost discontinuous SVM (SBDSV)
respectively, are proposed in this paper. By properly
arranging the shoot-through (ST) states and clamping a
certain switch to the positive or negative dc-link rail during
one-third of the fundamental period, reduced thermal
stresses and superior THD performance can be achieved.
The proposed modulation strategies are analyzed and
compared to the conventional ones in terms of current
stresses, power losses, thermal stresses, and output
harmonics. Finally, simulations and experimental tests are
carried out to validate the performance of the proposed
modulation strategies and verify the presented analysis.
Index Terms—Z-source, modulation strategy,
impedance-source inverter, thermal stress, total harmonic
distortion.
NOMENCLATURE
ISI Impedance-source inverter
ZSI Z-source inverter
qZSI Quasi-Z-source inverter
VSI Voltage-source inverter
PWM Pulse-width modulation
SVM Space vector modulation
Manuscript received May 20, 2021; revised July 23, 2021 and
October 12, 2021; accepted December 20, 2021. This work was
supported by the State Key Laboratory of Reliability and Intelligence of
Electrical Equipment, Hebei University of Technology under Grant
EERI_KF2020011 (Corresponding author: Ping Liu; Jie Xu).
Ping Liu and Meidi Sun are with the College of Electrical and
Information Engineering, Hunan University, Changsha 410082, China
(e-mail: pingliu@hnu.edu.cn; sunmeidi_smd@hnu.edu.cn).
Jie Xu is with the Shanghai Institute of Space Power-Sources,
Shanghai 200245, China and College of Electrical and Information
Engineering, Hunan University, Changsha 410082, China (e-mail:
jxwzdd@hnu.edu.cn).
Jing Yuan and Frede Blaabjerg are with the Department of Energy
Technology, Aalborg University, Aalborg 9220 Denmark (e-mail:
yua@energy.aau.dk; fbl@et.aau.dk).
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Shoot-through
THD Total harmonic distortion
MBMSV Maximum boost modified SVM
MBDSV Maximum boost discontinuous SVM
SBDSV Simple boost discontinuous SVM
ZSVM6 Six switching times modified SVM
ZSVM4 Four switching times modified SVM
SBC Simple boost control
MBC Maximum boost control
I. INTRODUCTION
I
mpedance-source inverters (ISIs) serve as a promising
alternative to two-state converters, provide a cost-effective
solution in renewable energy system applications, such as
photovoltaic, electric vehicle, and fuel cells [1-3]. This family
of inverters introduces an impedance source network between
the dc source and the inverter bridge to achieve phase legs
short-circuit immunity and functionality of boost-buck
capabilities [4-5]. Note that, the unique impedance source
network makes the ISIs embrace an additional switching state
(i.e. ST state) which is not permitted in conventional VSI.
Hence, additional concerns on the modulation strategy are
required to achieve the desired performance for ISIs.
Thermal stress and output harmonic are critical
considerations for ISIs in real operation as they affect the
reliability of power devices, system efficiency, and power
quality [6-7]. The modulation strategy is one of the effective
methods to relieve the thermal stress of the power device and
improve the THD performance by adjusting operating
conditions [8]. A comparative assessment of ISIs with different
modulation strategies was introduced in [9], where the results
indicated that modulation strategies can significantly affect the
thermal and harmonic performance of ISIs. Developed
modulation strategies have been investigated to improve the
thermal or harmonic performance of power converters [10-14].
But unfortunately, few modulation strategies for ISIs with
superior thermal and harmonic performance have been
explored yet.
Literature review shows many modulation strategies have
been investigated for the ISIs [14-29]. These strategies can be
broadly categorized as continuous modulation and
discontinuous modulation. The continuous modulation
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strategies can achieve symmetrical/balanced voltage boosting
per switching cycle and reduced device commutation with the
continuous modified reference technique [15]. Several
continuous SVMs to minimize the loss and harmonic for a
current-fed qZSI have been proposed in [14]. Unfortunately,
these SVMs cannot be applied to voltage-fed ISIs since the
current-fed ISI adopts an additional open-circuit state by
turning OFF all switches to realize boost-buck capabilities.
Four continuous SVMs for the three-phase voltage-fed
ZSI/qZSI were investigated in [22], which indicates that
ZSVM6 [23] and ZSVM4 [24] can achieve lower inductor
current ripples and output harmonics. Nonetheless, under the
continuous modulation strategies, the power devices
continuously commutate with a relatively high current level,
which yields high power loss thus degrade the efficiency [9].
Hence, recently, several improvements on discontinuous
modulation strategies have been presented to reduce the power
loss of the power devices [25-27]. In [25], two modified
discontinuous SVMs were proposed for qZSI to decrease the
switching loss by reducing commutation counts. However, the
current stresses of these modulation strategies are extremely
high due to single-phase leg ST at a time. Moreover, a
discontinuous modulation strategy for qZSI was proposed to
reduce the switching loss by reducing effective switching
frequency to 1/3 fs (switching frequency) [26]. However, it
requires a bulky impedance source network to avoid producing
high harmonics at the output. Another discontinuous SVM [27]
has been applied to the qZSI to reduce the switching loss with
shortened commutation periods during the ST state.
Nonetheless, it also needs a bulky impedance source network
due to the variable ST duty ratio.
As aforementioned, discontinuous modulation strategies
have the following merits in comparison with the continuous
strategies:
• Exhibited a highly comparative advantage of switching
loss reduction;
• Further improve the efficiency and thermal stress
performance.
To reduce the thermal and current stress and achieve superior
harmonic performance, this paper proposes two discontinuous
SVM strategies for the three-phase qZSI, i.e. the
maximum-boost discontinuous SVM (MBDSV) and the
simple-boost discontinuous SVM (SBDSV).
The rest of this paper is organized as follows. Section II
briefly reviews the operation and modulation principles of the
three-phase qZSI. In Section III, the proposed modulation
strategies are introduced and analytical expressions are also
derived. In Section IV, the current stresses, thermal stresses,
and output harmonics using the proposed and conventional
modulation strategies are simulated and analyzed
comparatively. Moreover, the impacts of these modulation
strategies on the thermal and harmonic performance of qZSI are
analyzed by exploring the relationship among the power losses,
junction temperatures, and inductor current ripples. In Section
V, experimental results are presented to validate the theoretical
and simulation analysis. Finally, the conclusions are
summarized in Section VI.
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II. REVIEW OF QZSI OPERATION AND MODULATION
STRATEGIES
The schematic of the three-phase qZSI and its equivalent
circuits are shown in Fig. 1. Due to the insertion of the
impedance source network, the qZSI has two operation states,
which are the non-ST state and the ST state. During the non-ST
state, the qZSI operates as a conventional VSI that feeds power
into the AC load, as shown in Fig. 1(b). During the ST state, as
shown in the equivalent circuit in Fig. 1(c), the qZSI allows the
upper and lower switches to turn on simultaneously and achieve
the voltage boost capability.
Inferring from the operation principle, the qZSI modulation
strategies could be modified from conventional SVMs by
adding the ST states into the traditional zero states.
The state-of-the-art modulation strategies for qZSI can be
classified into continuous and discontinuous modulation
strategies. Continuous modulation strategies normally utilize
additional reference signals to generate the ST state.
Accordingly, various continuous PWM strategies are presented
in the literature, e.g., SBC [4], MBC, [21], ZSVM6 [23],
ZSVM4 [24]. Among the continuous modulation strategies,
ZSVM6 is prevalent for its excellent inductor current ripple
performance. The ST state of ZSVM6 can be generated when
v*x+ (x=a,b,c) is smaller than the carrier signal and the v*x- is
larger than the carrier signal simultaneously. And the ST period
during one switching cycle is divided into six parts and evenly
inserted into the zero states. This mechanism makes it being an
effective modulation strategy to reduce the inductor current
ripple and improve the output harmonic performance.
Using the discontinuous modulation strategies, the qZSI is
implemented by selectively clamping one phase leg to the
dc-link rail throughout 1/3 of the fundamental period to achieve
minimal power device commutations. In [28] and [29], a series
of discontinuous strategies have been studied, yet they increase
the implementation complexity. By contrast, the MBMSV [25]
simplifies the implementation by utilizing only three reference
signals to modulate the qZSI. And the ST state is generated
when the carrier signal is larger than the upper envelope or
smaller than the lower envelope. Besides, it reduces the
switching loss to some extent with a relatively low effective
switching frequency.
Impedance network
C2 Inverter bridge
L1 D L2
To AC
Sap Sbp Scp
isap load
+
Vin C1 vpn iph
- isan Sbn Scn
San
(a)
(b) (c)
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Fig. 1. Circuit diagram of the three-phase qZSI. (a) The three-phase ST duty ratio; low inductor current ripples and output
qZSI topology. (b) The equivalent circuit during the non-ST state. (c) The
harmonics; relative lower switching losses and thermal stress;
equivalent circuit during the ST state. Here, Vin is the input voltage, vpn is
the dc-link voltage, vC1, and vC2 are the voltage drops on the capacitors as well as lower current stresses.
C1, C2, and iL is the current flowing through the inductors.

III. ANALYSIS OF THE PROPOSED MODULATION

STRATEGIES
This section starts by introducing the proposed two
discontinuous modulation strategies (MBDSV and SBDSV),
then, the theoretical analysis and mathematical derivation from
different aspects are presented.
A. Proposed Modulation Strategies
1) MBDSV
(a)
The reference signals of the MBDSV have been depicted in
Fig. 2(a). These reference signals are the same as the MBMSV,
which has been studied in [25]. They can be generated by
taking away the upper envelope (i.e. max (va*,vb*,vc*)) from the
conventional SVM sinusoidal signals and adding the rest to
(1+M)/2.
Fig. 2(b) shows the logic diagram of the MBDSV. The qZSI
using this scheme is modulated as follows: the ST states are
generated when the carrier signal is larger than the upper
envelope or smaller than the lower envelope (i.e.
min(va*,vb*,vc*)). Then they are inserted into three-phase legs.
Obviously, the current flowing through each switch is 1/3 of the
dc-link current. Between the upper and lower envelopes, the
qZSI is modulated as the VSI by comparing the three-phase
(b)
signals with the carrier signal. Fig. 2. Proposed MBDSV for the three-phase Qzsi. (a) Switching
Note that the MBDSV is a discontinuous modulation sequence within a fundamental period. (b) Logic diagram of the
strategy, during 1/3 of the To, since certain reference signal is generation of gate signals.
clamped to the positive rail (i.e. (1+M)/2) without carrying out
conventional pulse-width modulating, a certain switch will
maintain the ON/OFF state. Apparently, the effective switching
frequency and the switching loss will be reduced. Hence, the
merits of this modulation strategy are as follows: further reduce
switching losses and thermal stresses; reduce current stresses
by three-phase legs ST simultaneously.
2) SBDSV
The reference signals of the SBDSV are similar to the
aforementioned MBDSV and MBMSV, here additionally, an
extra lower envelope is adopted, as shown in Fig. 3(a). With
this arrangement, the ST duty ratio maintains constant during (a)
each switching period. The ST states are generated when the
carrier signal is larger than the upper envelope vp* (i.e.
max(va*,vb*,vc*)) or smaller than the lower envelope vn* (i.e.
(1-M)/2). Meanwhile, the qZSI is modulated as the VSI when
the reference signals are between the upper and lower
envelopes.
Considering that the SBDSV decoupled the M and DST with a
constant ST duty ratio, it is possible to eliminate the
low-frequency component ripples in the impedance source
network. Fig. 3(b) shows the logic diagram of the modulation
scheme. The ST states are inserted into the three-phase legs
simultaneously to achieve lower current stress. Consequently,
the following merits of the SBDSV can be obtained: constant
(b)

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Fig. 3. Proposed SBDSV for the three-phase ISI. (a) Switching 2 1

sequence within a fundamental period. (b) Logic diagram of the i p  iˆL  iˆph (7)
generation of gate signals. 3 2
B. Theoretical Analysis 3) Inductor Current Ripple
Fig. 5 shows the inductor current ripple and switching
1) ST Duty Ratio and Voltage Gain pattern of the MBDSV and SBDSV. It can be seen that the
For the MBDSV, the ST duty ratio varies periodically every inductor charging time is proportional to the ST state time. And
1/6 of the fundamental period. Based on the assumption that the the switching cycle Ts can be expressed as Ts=T1+T2+T0+TST,
amplitude of carrier waveform is normalized, the instantaneous where T1, T2, and T0 denote the active and zero time intervals
ST duty ratio dST during π/6 to π/2 can be expressed as separately. Generally, the inductor current ripples can be
3    defined by
dST  1  M sin(  ) (   ) (1)
 Vin  VC1
2 6 6 2
iL1 _ fall  L (T1 +T0 )
Then, the average ST duty ratio DST can be calculated by  1
 (8)
i V  VC 2

3  3 3M  in TST
DST  2 (1  M sin(  ))d  1  (2)  L1 _ rise L1
6 2 6 2
TABLE I
Then, the voltage gain is calculated as equation (3). EXPRESSIONS OF VOLTAGE GAIN FOR QZSI WITH DIFFERENT
1 M 2 1  DST PWM STRATEGIES
GM = =  (3)
1  2DST 3 3M - 3 3 1  2DST Modulation Scheme G vs. M G vs. DST DST vs. M
M 1  DST
For the SBDSV, the ST duty ratio maintains constant and the SBC 1 M
2 M -1 1  2 DST
dST and DST can be calculated as
M 2 1  DST  3M
3 ZSVM6 1
d ST  DST =1  M (4) 3M -1 3 1  2DST  2
2
M 2 1  DST  3 3M
Then, the voltage gain can be calculated using the following MBMSV 1
3 3M - 3 3 1  2DST  2
equation (5).
M 2 1  DST  3 3M
1 M 2 1  DST MBDSV
3 3M - 3 3 1  2DST 
1
2
G  M  B =M  = = (5)
1  2 DST 3M -1 3 1  2 DST 2 1  DST 
M 3M
For the clear comparison of proposed modulations and other SBDSV 1
3M -1 3 1  2DST  2
strategies, Table I summarizes the expressions of voltage gain
and average shoot-through duty ratio for qZSI with different 5 5 SBC
SBC
modulation strategies. The voltage gain G versus the average MBMSV & MBDSV MBMSV & MBDSV
4 ZSVM6 & SBDSV
ST duty ratio DST and modulation index M with different PWM 4 ZSVM6 & SBDSV
Voltage gain G
Voltage gain G

strategies are shown in Fig. 4. It should be noted that the 3

voltage gains of SBC, MBMSV and ZSVM6 presented in [9] 3
2
are used in this paper. We can find that, the MBMSV and
MBDSV, and the ZSVM6 and SBDSV show the same voltage 2
1
gain relationship, respectively. Moreover, both Figs. 4 (a) and
1 0
(b) indicates that with the same DST or M, the proposed 0
0.1 0.2 0.3 0.4 0.5 0.5 0.6 0.7 0.8 0.9 1.0
Average shoot-through
MBDSV has the maximum voltage boost capability. duty ratio DST Modulation index M
(a) (b)
2) Current Stress of Power Device Fig. 4. Voltage gain of qZSI with different modulation strategies. (a)
The current flowing through the qZSI power devices consists Voltage gain vs. average ST duty ratio DST. (b) Voltage gain vs.
of the non-ST state current (i.e. iNST = iph, iph is the phase modulation index M.
current) and the ST state current.
For the strategies with single-phase-leg ST, the ST state
current is expressed as follows [9]:
2iL , i ph  0
iST   (6)
2iL +i ph , i ph  0
For the strategies with three-phase-leg ST, the ST state
current iST is equal to 2/3iL+iph/2 [4].
As aforementioned, the three-phase legs of the MBDSV and
SBDSV are all in the ST state simultaneously. Therefore, the
peak current (current stress) of the power device during the ST
interval can be described as a function of the peak current of the Fig. 5. Inductor current ripple and switching pattern of the MBDSV and
inductor and output phase current, that is SBDSV during one switching cycle. Here, d0=(1-M)/2, d1=(dST-d0)/2,
d2=d0/2.

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It is noted that the ST state time interval of the MBDSV Pcon_T  Pcon_T_NST +Pcon_T_ST
generated by the upper envelope vp* maintains constant, which
1 2
is d0Ts, and the ST state time interval generated by the lower 
2  
1  dST ( )   Vce0  I NST_ave  Ron_T  I NST_rms
2
d


envelope vn* is Ts (dST-d0)/2. Then, the inductor current ripples 0

of the MBDSV and SBDSV can be derived as follows 1

 
2

2 0
+ d ST ( ) Vce0  IST_ave  Ron_T  IST_rms
2
d
iL1 _ fall _ SBDSV  i1  i3  i4  i6
 where Vce0 and Ron-T are the threshold voltage and on-state
 V  V 1  d ST d kM
 in C1 Ts  ST resistance of the power device; INST_ave, IST_ave, INST_rms, IST_rms
 L1 2 2
 (9) are the average current, and root-mean-square (RMS) current
iL1 _ rise _ SBDSV  i1  i6  i3  i4 during the non-ST and ST states, respectively.
 V  VC 2 TST k (d ST  1)(1  M ) Considering the antiparallel diode during the ST state is
  in  reverse biased, therefore the conduction loss in the diode
 L1 2 2
merely consist of the loss during the traditional state, which is
i  i i  i i
1
 
L 1_ fall _ MBDSV 2 3 4 5
 2

 
V V 1
( T  T)
in
1 d kMC1
sin(  )
 ST
Pcon_D 
2  1 M  d
0
ST
( )   VD0  iˆph sin   Ron_D  iˆph2 sin2  d
 L 2 2 2 3
1 2


1
 
i  i 
L 1_ rise _ MBDSV _ v*p
i 3 4 where VD0 and Ron-D are the threshold voltage and on-state
 resistance of the antiparallel diodes.
 V V k (d  1)(1  M ) (10)
 dT  in C2 ST
The calculation of impedance source inductor losses (core
 L 2
0 s

 1 loss and copper loss) are derived in equations (16)-(20). The

i  i i core loss can be derived by multiplying the loss density by the
L 1_ rise _ MBDSV _ v*n 2 5
 core volume.
 V V  (1  M )  PFe  a  Bpkb  f sw_L
c
 I e  Ae / 2 
  2d T  k (d  1)  d 
in C2
  
L 2 
1 s ST ST

 1 where Ie is the core path length, Ae is the effective

cross-sectional area. And all of the above coefficients including
Vin Ts
where k  . the constant a, b, c can be obtained from the datasheet. ΔBpk is
L1 (2 d ST  1) defined as half of the AC flux density fluctuation, which is
When θ = π/6, the inductor current ripple of the MBDSV  Bpk =  Bpk ( H max )-Bpk ( H min )  / 2  
reaches the maximum, which can be calculated by
where in magnetic field intensity H is a function of the number
iL1_ max_ MBDSV  iL1_ rise _ MBDSV _ max =
4
3
kM ( 3  1) M  1) (11)   of turns N, inductor DC bias current IL, and current ripple ΔiL,
which is calculated as
From Eq. (9), the maximum inductor current ripple of the N i N i
 H max  ( I L  L ), H min  ( I L  L )  
SBDSV can be calculated by Ie 2 Ie 2
d ST kM The copper loss in the impedance network inductor
iL1_ max_ SBDSV  (12)
2 comprises DC winding loss and AC winding loss [31].
 PCu  Rdc I L  Rac iL /12 
2 2
4) Power Loss  
The total losses in the ISI mainly comprise of the inverter where Rdc is the resistance of the copper wire.
power device losses (switching losses, conduction losses and Due to the skin effect under high frequency and high current
reverse recovery losses) and impedance network losses ripple, the AC winding resistance of the copper wire is related
(inductor losses, diode losses, and ESR losses of the impedance to the skin depth δ and wire thickness h, that is
network capacitors).  Rac  Rdc h /  =Rdc h fsw_L / 0.661  
The instantaneous average switching losses in a power
device can be obtained by equation (13). The calculation of diode losses (conduction loss and
switching loss) and the capacitor losses in the impedance
Psw 
v pn f sw_T

Vce 2  2

0
E (iST )  d ST ( )d network presented in [30] are used in this paper.
 5) Thermal Stress
0
2
  E (iNST )  1  d ST ( )  d )   2



0
v pn  Qrr _ D  f sw_D d The dynamic thermal modelling for the power devices is
designed using Foster lumped network. In this paper, a
where Vce is the reference collector-emitter voltage, fsw-T and
fourth-order Foster thermal network is implemented using
fsw-D are the effective switching frequency of IGBT and
thermal parameters extracted from the manufacturer datasheet.
antiparallel diode separately, E(iST) and E(iNST) are the
Thus, the mean value and fluctuation of the junction
switching energy losses, Qrr-D is the recovered charge of the
temperature of power devices can be estimated as (21)-(22).
antiparallel diode. 4
The conduction losses in a power device of the ISI appear Tj  Ploss  ( Rth ( j-c )( i )  Rth ( c-h )  Rth ( h-a ) )  Ta (21)
during the non-ST and ST states, which can be calculated by i 1

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1  exp(t
4 on
T j  2 Ploss   Rth ( j - c )( i )  (22)
i 1 1  exp( To /  th ( i ) )
where Rth(j-c)(i) and τth(i) are the ith (i=1~4) order junction-to-case
thermal resistance and time constant. Rth(c-h) and Rth(h-a) are the
case-to-heatsink and heatsink-to-ambient thermal resistance,
respectively. Ta is the ambient temperature, and Ploss is the total
power losses on the power devices, ton denotes the on-state time
duration of power device during each fundamental period To.
IV. SIMULATION RESULTS
To further benchmark the performance of the proposed
modulation strategies, a three-phase qZSI was designed with an
IGBT module FS50R12KT4 as the inverter bridge switch and
an IDW40G120C5B as the impedance network diode. The
simulation was carried out based on MATLAB/PLECS.
Simulation parameters as well as experimental ones are given
in Table II. It is noteworthy that the input voltage, modulation
index, and shoot-through duty ratio were adjusted to various
values according to different comparisons.
TABLE II
/  th ( i ) )  and 3.3% lower than using the SBC, ZSVM6 and MBMSV
2
respectively. And the power losses using the proposed SBDSV
are 6.6% and 3.3% lower than using the SBC, ZSVM6
respectively.
Fig. 8 intuitively depicts the transient state of IGBT junction
temperatures and the zoomed-in of steady-state temperature
under different modulation strategies. This figure confirms the
prior discussion about the power losses in IGBTs using the
different modulation strategies. Moreover, the MBDSV yields
the lowest junction temperature due to the lowest power loss.
Specifically, using the proposed MBDSV, the mean junction
temperatures (thermal loading) are 37.5%, 33.6% and 12%
lower than using the SBC, ZSVM6 and MBMSV respectively.
Furthermore, using the SBDSV, the mean value of the junction
temperatures and the fluctuation of junction temperatures
(thermal cycling) of the upper switches are lower than that of
the lower switches due to the asymmetric ST generation
strategy. Nonetheless, the mean value of the lower switches
junction temperatures of the proposed SBDSV is 12.8% and 7.4%
lower than that of the SBC and ZSVM6.
300
SBC ZSVM6 MBMSV MBDSV SBDSV
vpn (V)

SIMULATION AND EXPERIMENTAL PARAMETERS OF THE THREE-PHASE QZSI 150

300 300 300 300 300

0 0 0 0 0
0 Ts 0 Ts 0 Ts 0 Ts 0 Ts
0
Parameter Value Parameter Value 10
iph (A)

Input voltage Vim 150~220V Load resistance Rload 15 Ω 0

-10
Output power Pout 1~2 kW Load inductance Lload 3 mH 10
6.4 7.4 7.4 7.4 7.4
iL (A)

Impedance source C1,C2 200 μF Switching frequency fs 20 kHz 5

5.9
0 Ts
6.9
0 Ts
6.9
0 Ts
6.9
0 Ts
6.9
0 Ts
0
Impedance source L1,L2 4 mH Fundamental frequency fo 50 Hz 20 17.19A
iSap (A)

14.45A
8.93A
Ambient temperature 25 ֠C Load resistance Rload 15 Ω 10 7.87A 8.01A

0
20

Simulation results of the traditional and proposed

iSan (A)

10

modulation strategies for the dc-link voltage, phase current, 0

0 To 2To 0 To 2To 0 To 2To 0 To 2To 0 To 2To

inductor current, and currents through the upper and lower Fig. 6. Simulation results of the qZSI with different modulation strategies
switches are shown in Fig. 6. These simulation results confirm (from upper to bottom): dc-link voltage vpn, phase current iph, inductor
and verify the functionality and the reported analysis of the current iL, and currents through the upper (iSap) and lower devices iSan,
proposed modulation strategies. From these waveforms, it can where To is the fundamental period (@Pout = 1 kW, fs = 20 kHz, G = 1.2).
be observed that, the proposed MBDSV and SBDSV show 100
significantly low current stresses than the MBMSV and C1,2 ESR
fs=20 kHz
ZSVM6, due to dividing the current among the three-phase legs. 80 DFW tot
And the maximum currents in the proposed ones are close to the fs=5 kHz fs=10 kHz L1,2 Core
Power loss(W)

SBC. In the proposed MBDSV, the current stresses are reduced 60

L1,2 Cu
by 48.1% and 38.2% than the MBMSV and ZSVM6. The Proposed
DZ sw
proposed SBDSV shows 53.4% and 44.6% lower current 40
stresses than the MBMSV and ZSVM6 respectively. However, DZ con
the MBMSV and MBDSV yield higher inductor current ripples 20 T1~6 sw
than the SBC, ZSVM6, and SBDSV, since the maximum boost T1~6 con
mechanism yields a variable ST duty ratio. 0
The obtained simulation results in Fig. 7 show the power loss
distributions with impedance network capacitor ESR loss, total
loss of inverter bridge antiparallel diode, impedance network (a)
inductor core and copper loss, switching and conduction loss of
impedance network diode, switching and conduction loss of
inverter bridge IGBT. It can be observed that the MBDSV
presents the lowest power loss among these modulation
strategies. Moreover, this figure shows superior switching loss
performance using the proposed modulation strategies. As can
be seen, at the condition of Pout = 1 kW, fs = 20 kHz, G = 1.2,
using the proposed MBDSV, the total losses are 27.5%, 24.9%

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200
C1,2 ESR
Pout=2 kW
DFW tot
150
Pout=1 kW Pout=1.5 kW L1,2 Core
Power loss(W)

Proposed L1,2 Cu
100
DZ sw
DZ con
50 (a)
T1~6 sw
T1~6 con
0


(b)
200
G=2.0 C1,2 ESR
DFW tot (b)
150
L1,2 Core
Power loss(W)

G=1.2 G=1.5
L1,2 Cu
100 Proposed
DZ sw
DZ con
50
T1~6 sw
T1~6 con (c)
0


(c)
Fig. 7. Power loss distribution of the qZSI under different operating
conditions. (a) Loss vs. fs (@ Pout = 1 kW), (b) Loss vs. Pout (@ fs = 20
kHz), and (c) Loss vs. G (@ Pout = 1 kW, fs = 20 kHz).

(d)

(e)
Fig. 8. Simulated junction temperature result under different modulation Fig. 9. Simulation spectrum of the output current (@ Pout = 1 kW, fs = 20
strategies (@ Pout = 1 kW, fs = 20 kHz, G = 1.2). kHz, G = 1.2). (a) SBC. (b) ZSVM6. (c) MBMSV. (d) MBDSV. (e)
SBDSV.
The spectrum of the output current is shown in Fig. 9, where 3.5
MBMSV 7 MBMSV
low-frequency harmonics are presented. Fig. 10 shows the MBDSV 6 MBDSV
SBDSV SBDSV
output current THD versus the switching frequency and voltage 3 SBC 5 SBC
ZSVM6
THD (%)

ZSVM6
THD (%)

gain. These results confirm that the proposed two discontinuous 4

strategies have superior harmonic performance. And the 2.5
3
ZSVM6, SBC, and SBDSV result in a lower magnitude of 2
harmonic contents in the phase current than MBMSV and 2
1
MBDSV due to lower inductor current ripples and constant ST
1.5 0
duty ratios. From Fig.10, it is observed that the THD of 1.2 1.5 2 5 10 20
MBDSV is quite close to the MBMSV, and they lead to the Gain (-) Switching frequency (kHZ)
highest THD on the account of variable ST duty ratio. 
Moreover, from Figs. 8~10, it can be concluded that the (a) (b)
Fig. 10. Simulated THD levels of the output current with various
modulation strategies make a compromise between harmonic modulation strategies. (a) THD vs. G (@ Pout = 1 kW, fs = 20 kHz). (b)
and thermal performance. THD vs. fs (@ Pout = 1 kW).

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V. EXPERIMENTAL RESULTS
vpn (150 V/div)
To further validate the functionality of the proposed
modulation strategies and verify the prior simulation results, a
three-phase qZSI has been built up, as shown in Fig. 11. The iL (10 A/div)

main control board is designed based on DSP28379D. HIOKI iph (10 A/div) 4 ms/div
PW600 power analyzer is used to perform efficiency and
harmonic analysis. It is noteworthy that the silicone inside the 
(e)
IGBT module was removed to measure the junction Fig. 12. Experimental results of the qZSI for different modulation
temperature directly with silicone-rubber remover strategies (@ Pout = 1 kW, fs = 20 kHz, G = 1.2), where dc-link voltage
ARDROX2312 and the exposed chips were sprayed with the vpn, inductor current iL, phase current iph are shown from up to bottom. (a)
anticorrosive and heat-resisting paint. SBC. (b) ZSVM6. (c) MBMSV. (d) MBDSV. (e) SBDSV.
Fig. 12 shows the dc-link voltage, inductor current, phase Sap
Sap
current of the qZSI for different modulation strategies. The San San
results confirm the theoretical analysis and verified the Sbp
Sbp
simulation results that the SBC, SBDSV, and ZSVM6 possess Sbn Sbn
lower inductor current ripples than MBMSV and MBDSV.
Scp Scp
Fig. 13 presents the thermal stress results. As shown, the
Scn
junction temperature of MBDSV is the lowest, for the upper
Scn

(a) (b)
switch, which is 34.6%, 31.2% and 10.2% lower than the SBC,
ZSVM6 and MBMSV respectively. Moreover, using SBDSV, Sap Sap
San
the junction temperature of the lower switch is 14% and 9.5% San

lower than that using the ZSVM6 and SBC. Since SBDSV Sbp Sbp

leads to asymmetric thermal stress performance among the Sbn Sbn

upper and lower switches, in practical operation, the PWM Scp Scp

signals of upper and lower switches can be exchanged every Scn Scn

several output frequencies to achieve consistent performance (c) (d)
among upper and lower switches. Sap
San

Sbp
Sbn

Scp
Scn

(e)
Fig. 13. Experimental infrared images of the uncovered IGBT module for
the qZSI for different modulation strategies (@ Pout = 1 kW, fs = 20 kHz,
G = 1.2). (a) SBC. (b) ZSVM6. (c) MBMSV. (d) MBDSV. (e) SBDSV.

Fig. 14 plots the measured qZSI efficiency. This figure

confirms the merit of having reduced power losses, where
Fig. 11. Three-phase qZSI experimental setup. higher efficiency can be reached. It can be seen that, the
MBDSV results in highest qZSI efficiency. Moreover, with the
vpn (150 V/div) SBDSV, the qZSI efficiency is higher than with the ZSVM6
and SBC. At the condition of Pout = 1 kW, fs = 20 kHz, G = 1.2,
iL (10 A/div) the proposed MBDSV leads to 1.4%, 5% and 6.4% higher
iph (10 A/div) 4 ms/div
efficiency than the MBMSV, ZSVM6 and SBC respectively. It
confirms that the proposed MBDSV has superior efficiency and
(a) (b)
thermal performance.
Fig. 15 shows the output current THD versus voltage gain
vpn (150 V/div) vpn (150 V/div) and switching frequency. The simulation and experimental
values are almost the same with an acceptably small error. This
iL (10 A/div) iL (10 A/div) error is caused by really measuring errors such as current probe
iph (10 A/div) 4 ms/div iph (10 A/div) 4 ms/div
errors, and limited order of the harmonic components measured
by the power analyzer. These results confirmed the simulation
results and theoretical analysis that the proposed SBDSV leads
(c) (d)
to a lower output current harmonic than the MBMSV. In this
figure, the THD of the SBDSV is 65.1% lower than the
MBMSV at the condition of Pout = 1 kW, fs = 20 kHz, G = 1.2.
Moreover, the SBDSV achieves very close superior THD
performance to that of the continuous strategies SBC and
ZSVM6. However, the THD result for the proposed MBDSV is

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higher than other continuous strategies due to the maximum
boost mechanism.
Fig. 16 shows the measured spectrum of the output current. It
confirms that the harmonic spectra of the SBC, ZSVM6, and
SBDSV are more uniformly distributed, and less energy is
spread over high-order harmonics. The MBDSV and MBMSV
show higher output harmonics since they convert the entire zero
states into ST states to obtain the maximum voltage gain, which
obviously introduces a higher low-frequency ripple.
95
90
Efficiency (%)
Fig. 16. Measured harmonic spectrum of the output current for different
th
modulation strategies where the maximum harmonic order is 50 (@
Pout = 1 kW, fs = 20 kHz, G = 1.2). (a) SBC. (b) ZSVM6. (c) MBMSV. (d)
MBDSV. (e) SBDSV.
VI. CONCLUSION
This paper has proposed two discontinuous modulation
strategies to achieve superior thermal and harmonic
96 performance for three-phase qZSI, called the maximum-boost
discontinuous SVM (MBDSV) and the simple-boost
94
discontinuous SVM (SBDSV). They selectively clamp certain

Efficiency (%)

92 phase leg to ON or OFF state within one-third of a fundamental

85
90 period while the remaining two phase legs conduct PWM
80 modulation normally.
MBDSV 88 MBDSV
MBMSV MBMSV With the proposed strategies, the main benefits can be
75 SBDSV 86 SBDSV
ZSVM6
SBC
ZSVM6
SBC
summarized as:
70 84 • Alleviate the thermal stress without increasing the power
1.2 1.5 2.0 5 10 20
Gain (-) Switching frequency (kHz)  loss;
(a) (b)
Fig. 14. Measured qZSI efficiencies for different modulation strategies.
• Relieve the current stress by three-phase legs ST
(a) Efficiency vs. G (@ Pout = 1 kW, fs = 20 kHz). (b) Efficiency vs. fs (@ simultaneously;
Pout = 1 kW). • Ameliorate the inductor current ripple and output
3 MBMSV harmonic (i.e. the SBDSV) while barely compromising the
MBDSV thermal performance.
SBDSV
2 MBMSV
SBC For the MBDSV, the conventional zero states are entirely
ZSVM6
THD (%)

THD (%)

MBDSV converted into ST states to maximize the dc-link voltage

SBDSV
SBC utilization, and the utmost reductions in the power loss, current
1 ZSVM6 and thermal stress are achieved. Compared with the
conventional MBMSV, the proposed MBDSV reduces the
0
current stress owing to three-phase-leg ST, which is expected to
1.2 1.5 2 5 10 20 reduce the power loss and thermal stress. However, the inductor
Gain (-) Switching frequency (kHZ) current has a high low-frequency ripple. Thus, it is suitable for
(a) (b) any application operating at the high fundamental frequency in
Fig. 15. Measured THD results of the output current. (a) THD vs. G (@ order to avoid the need of a bulky impedance network, such as
Pout = 1 kW, fs = 20 kHz). (b) THD vs. fs (@ Pout = 1 kW).
400 Hz intermediate frequency inverter for ship or all-electric
aircraft, including radar, sonar, fire control, and shipborne
aircraft service systems.
For the SBDSV, an additional lower envelope is adopted for
 commanding constant ST time intervals. Preferably, with
(a)
superior thermal stress and output harmonic performance, it is
advantageous in demanding operating conditions without the
requirement of a bulky impedance network.
Finally, an extensive performance evaluation of the proposed
 modulation strategies was carried out by simulation and
(b)
experiment.

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Transactions on Industrial Electronics
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Ping Liu (Senior Member, IEEE) is currently
an Associate professor in the College of
Electrical and Information Engineering, Hunan
University, China. He received the B.S., M.S.
and Ph.D. degrees both in the department of
Electrical Engineering at Chongqing University,
China, in 2005, 2008 and 2013, respectively.
He was a Research Assistant in the department
of Electrical Engineering at The Hong Kong
Polytechnic University, Hongkong (2012) and a
Post-Doctoral Research Associate the Mcmaster Institute for
Automotive Research and Technology (MacAUTO), Mcmaster
University, Canada (2013-2014). He was a guest researcher in the
department of Energy Technology at Aalborg University, Denmark
(2017-2018).
Dr. Liu has authored more than 60 peer-reviewed publications, and has
over 30 patents granted or pending. He received the Excellent Paper
Award at the 2nd IEEE International Power Electronics and Application
Conference and Exposition (PEAC) in 2018 at Shenzhen, China. His
main research areas include power electronics and motor drives for
Electric Vehicles, active thermal optimized control of electric drives.
Jie Xu received the B.S. degree in electrical
engineering and automation from University of
South China, Hengyang, China, in 2018, and the
M.S. degree in electrical engineering from
Hunan University, Changsha, China.
He is currently working at Shanghai Institute of
Space Power-Sources as an engineer.
His research interests include reliability
evaluation, modulation strategy, impedance
source inverter, switch power converter control
theory, DC-DC converter. He received the Excellent Paper Award and
the Best Oral Presenter Award at the 2nd IEEE International Power
Electronics and Application Conference and Exposition (PEAC) in 2018
at Shenzhen.
Meidi Sun received the B.S., M.S., and Ph.D.
degrees in control engineering from Hunan
University, Changsha, China, in 2010, 2014 and
2021, respectively. She is currently a lecturer in
Changsha University of Science & Technology,
Hunan University, Changsha, China. Her
research interests include machine learning,
health management and fault diagnosis.
This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Citation information: DOI 10.1109/TIE.2021.3139185, IEEE
Transactions on Industrial Electronics

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

Jing Yuan (Member, IEEE) received the B.S.

degree from the Shenyang University of
Technology, Shenyang, China, in 2013, and two
S.M. degrees from the China University of
Petroleum (East China), Qingdao, China, and
from the Khalifa University, Abu Dhabi, United
Arab Emirates, in 2017, and the Ph.D. degree
with the Department of Energy Technology,
Aalborg University, Aalborg, Denmark, in 2021.
He is currently a Post-doc with the Department
of Energy Technology, Aalborg University, Aalborg, Denmark.,From
September 2019 to January 2020, he was a Visiting Student Research
Collaborator with the Department of Electrical Engineering, and the
Andlinger Center for Energy and the Environment, Princeton University,
Princeton, NJ, USA. His research interests include high-performance
power converters, high-frequency power electronics and grid-connected
system design.
Dr. Yuan received the First Place Award of the IEEE ECCE Best
Student Project Demonstration and the Young Professionals & Student
Award at the 2019 IEEE International Conference on Compatibility,
Power Electronics and Power Engineering.

Frede Blaabjerg (Fellow, IEEE) received the

Ph.D. degree in electrical engineering from
Aalborg University, Aalborg, Denmark, in 1995,
and the honoris causa degree from the
University Politehnica Timisoara, Timisoara,
Romania and Tallinn Technical University,
Tallinn, Estonia, in 2017 and 2018, respectively.
He was with ABB-Scandia, Randers, Denmark,
from 1987 to 1988. He became an Assistant
Professor in 1992, an Associate Professor in
1996, and a Full Professor of power electronics and drives in 1998. In
2017, he became a Villum Investigator. He has authored/coauthored
more than 600 journal papers in the fields of power electronics and its
applications. He has coauthored four monographs and is an editor of ten
books in power electronics and its applications. His research interests
include power electronics and its
applications such as in wind turbines, PV systems, reliability, harmonics,
and adjustable speed drives.
Prof. Blaabjerg was the recipient of 33 IEEE Prize Paper Awards, the
IEEE PELS Distinguished Service Award in 2009, the EPE-PEMC
Council Award in 2010, the IEEE William E. Newell Power Electronics
Award 2014, the Villum Kann Rasmussen Research Award 2014, the
Global Energy Prize in 2019, and the 2020 IEEE Edison Medal. He was
the Editor-in-Chief of the IEEE TRANSACTIONS ON POWER
ELECTRONICS, from 2006 to 2012. He has been a Distinguished
Lecturer for the IEEE Power Electronics Society from 2005 to 2007 and
for the IEEE Industry Applications Society from 2010 to 2011 as well as
from 2017 to 2018. In 2019–2020, he served as a President of IEEE
Power Electronics Society. He has been a Vice-President of the Danish
Academy of Technical Sciences. He is nominated in 2014–2020 by
Thomson Reuters to be between the 250 most-cited researchers in
engineering in the world.

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