AO4496

General Description Product Summary

The AO4496 uses advanced trench technology to VDS (V) = 30V
provide excellent RDS(ON) with low gate charge. This ID = 10A (VGS = 10V)
device is suitable for use as a DC-DC converter RDS(ON) < 19.5mΩ (VGS = 10V)
application. RDS(ON) < 26mΩ (VGS = 4.5V)

100% UIS Tested

100% Rg Tested

SOIC-8

Top View Bottom View D

D
D
D
D

G G
S
S S
S

Absolute Maximum Ratings TJ=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 10
Current A TA=70°C ID 7.5
B A
Pulsed Drain Current IDM 50
Avalanche Current G IAR 17
G
Repetitive avalanche energy L=0.1mH EAR 14 mJ
TA=25°C 3.1
Power Dissipation A PD W
TA=70°C 2.0
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady State 59 75 °C/W
Maximum Junction-to-Lead C Steady State RθJL 16 24 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4496

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V
VDS = 30V, VGS = 0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ = 55°C 5
IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA 1.4 1.8 2.5 V
ID(ON) On state drain current VGS = 10V, VDS = 5V 50 A
VGS = 10V, ID = 10A 16 19.5
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 24 29 mΩ
VGS = 4.5V, ID = 7.5A 21 26
gFS Forward Transconductance VDS = 5V, ID = 10A 30 S
VSD Diode Forward Voltage IS = 1A,VGS = 0V 0.76 1 V
IS Maximum Body-Diode Continuous Current 3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 550 715 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 110 pF
Crss Reverse Transfer Capacitance 55 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3 4 4.9 Ω
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge 9.8 13 nC
Qg (4.5V) Total Gate Charge 4.6 6.1 nC
VGS=10V, VDS=15V, ID=10A
Qgs Gate Source Charge 1.8 nC
Qgd Gate Drain Charge 2.2 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL= 1.5Ω, 3.2 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 24 ns
tf Turn-Off Fall Time 6 ns
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 22 29 ns
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 14 nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating. 0
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev5: Nov. 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4496

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 50
10V VDS= 5V
4.5V
4V 40
40

30 30

ID(A)
ID (A)

3.5V
20 20

VGS= 3V 125°C
10 10
25°C

0 0
0 1 2 3 4 5 1 2 3 4 5
VDS (Volts) VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

26 1.8

VGS= 10V
On-Resistance

24 VGS= 4.5V 1.6 ID= 10A

22
Ω)
RDS(ON) (mΩ

1.4 VGS= 4.5V

Normalized On

20 ID= 7.5A

1.2
18
VGS= 10V

16 1.0

14 0.8
0 5 10 15
IF=-6.5A,
20
dI/dt=100A/µs
25 30 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

50
ID= 10A
45 1E+01
40 1E+00
Ω)

35
RDS(ON) (mΩ

1E-01
125°C
IS (A)

30
1E-02 125°C
25
1E-03
20 25°C
1E-04
25°C
15
1E-05
10
1E-06
2 4 6 8 10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4496

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 800
VDS= 15V
ID= 10A
8 Ciss
600

Capacitance (pF)
VGS (Volts)

6
400
4

200 Coss
2

Crss
0 0
0 2 4 6 8 10 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000
10µs TJ(Max)=150°C
TA=25°C
10 100µs
100
Power (W)
ID (Amps)

RDS(ON) 1ms
1 limited
10ms
100mss 10
0.1 10s
TJ(Max)=150°C DC
TA=25°C
0.01 1
IF=-6.5A, dI/dt=100A/µs
0.1 1 10 100 0.0001 0.01 1 100
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-
Operating Area (Note E) to-Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=75°C/W
Thermal Resistance

0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
PD NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT Ton
SingleNOTICE.
Pulse T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4496

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Qgs Qgd
- VDC Vds
DUT -
Vgs
Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs +
Vgs VDC Vdd I AR
Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ IRM
Vgs Vdd
VDC
Vdd
Ig
- Vds

Alpha & Omega Semiconductor, Ltd. www.aosmd.com