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HGTG30N60B3D: 60A, 600V, UFS Series N-Channel IGBT With Anti-Parallel Hyperfast Diode Packaging
HGTG30N60B3D: 60A, 600V, UFS Series N-Channel IGBT With Anti-Parallel Hyperfast Diode Packaging
Features
• 60A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 3Ω.
TC = 150oC - - 3 mA
Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES - 7.2 - V
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
60 225
ICE, COLLECTOR TO EMITTER CURRENT (A)
200
50
175
40 150
125
30
100
20 75
50
10
25
0 0
25 50 75 100 125 150 0 100 200 300 400 500 600 700
FIGURE 1. DC COLLECTOR CURRENT vs CASE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TEMPERATURE
www.DataSheet4U.com 20 500
16 400
ISC
10
14 350
12 300
f = 0.05 / (td(OFF)I + td(ON)I) TC VGE
1 MAX1
fMAX2 = (PD - PC) / (EON + EOFF) 75oC 15V 10 250
75oC 10V tSC
PC = CONDUCTION DISSIPATION
110oC 15V
(DUTY FACTOR = 50%) 8 200
110oC 10V
RθJC = 0.6oC/W, SEE NOTES
0.1 6 150
5 10 20 40 60 10 11 12 13 14 15
ICE , COLLECTOR TO EMITTER CURRENT (A) VGE , GATE TO EMITTER VOLTAGE (V)
225 350
DUTY CYCLE <0.5%, VGE = 10V DUTY CYCLE <0.5%, VGE = 15V
200 PULSE DURATION = 250µs PULSE DURATION = 250µs
300
175
TC = -55oC TC = 150oC 250
150 TC = -55oC
125 200
TC = 25oC TC = 150oC
100 150
75
100
50 TC = 25oC
50
25
0 0
0 2 4 6 8 10 0 1 2 3 4 5 6 7
VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
6 4.5
RG = 3Ω, L = 1mH, VCE = 480V RG = 3Ω, L = 1mH, VCE = 480V
EOFF, TURN-OFF ENERGY LOSS (mJ)
EON , TURN-ON ENERGY LOSS (mJ)
4.0
5
TJ = 25oC, TJ = 150oC, VGE = 10V 3.5
4 3.0
2.5
3 TJ = 150oC, VGE = 10V OR 15V
2.0
2 1.5
1.0
1
0.5 TJ = 25oC, VGE = 10V OR 15V
TJ = 25oC, TJ = 150oC, VGE = 15V
0 0
10 20 30 40 50 60 10 20 30 40 50 60
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT
55
www.DataSheet4U.com 250
RG = 3Ω, L = 1mH, VCE = 480V RG = 3Ω, L = 1mH, VCE = 480V
TJ = 25oC, TJ = 150oC, VGE = 10V
tdI , TURN-ON DELAY TIME (ns)
50
200
50
30
TJ = 25oC, TJ = 150oC, VGE = 15V
0
25 10 20 30 40 50 60
10 20 30 40 50 60
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT
300 120
RG = 3Ω, L = 1mH, RG = 3Ω, L = 1mH, VCE = 480V
td(OFF)I , TURN-OFF DELAY TIME (ns)
VCE = 480V
tfI , FALL TIME (ns)
250 100 TJ = 150oC, VGE = 10V AND 15V
TJ = 150oC, VGE = 10V, VGE = 15V
TJ = 25oC, VGE = 10V, VGE = 15V
200 80
150 60
TJ = 25oC, VGE = 10V AND 15V
100 40
10 20 30 40 50 60 10 20 30 40 50 60
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
EMITTER CURRENT CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
300 16
Ig (REF) = 1mA, RL = 10Ω, TC = 25oC
VGE, GATE TO EMITTER VOLTAGE (V)
150 8
TC = 25oC
TC = 150oC 6
100 VCE = 200V
4
VCE = 400V
50 2
0 0
4 5 6 7 8 9 10 11 0 50 100 150 200
VGE , GATE TO EMITTER VOLTAGE (V) QG, GATE CHARGE (nC)
www.DataSheet4U.com 10
FREQUENCY = 1MHz
8 CIES
C, CAPACITANCE (nF)
6
COES
2
CRES
0
0 5 10 15 20 25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
100
0.50
0.20
0.10
10-1
0.05
0.02 t1
0.01 PD
DUTY FACTOR, D = t1 / t2
10-2 SINGLE PULSE t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
200 50
TC = 25oC, dIEC/dt = 200A/µs
175
IEC , FORWARD CURRENT (A)
40
t, RECOVERY TIMES (ns)
trr
150
125 25oC 30
ta
100
20
75
100oC tb
50
-55oC 10
25
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 2 5 10 20 30
VEC , FORWARD VOLTAGE (V) IEC , FORWARD CURRENT (A)
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD FIGURE 18. RECOVERY TIME vs FORWARD CURRENT
VOLTAGE DROP
90%
VGE 10%
EON
L = 1mH EOFF
VCE
RG = 3Ω
90%
+ ICE 10%
td(OFF)I trI
VDD = 480V tfI
-
td(ON)I
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. SWITCHING TEST WAVEFORMS
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. I10