Microelectronics

Diode Models and Circuits

2018/10/4

Jieh-Tsorng Wu

National Chiao-Tung University

Department of Electronics Engineering
 Outline
1. Ideal Diode Model
2. Simple Diode Circuits
3. Constant-Voltage Model
4. Exponential Model
5. Small-Signal Model

4. Diodes 2 Microelectronics; Jieh-Tsorng Wu

 Diode’s Application: Cell Phone Charger

 Diode acts as the black box (after transformer) that passes only the positive half of
the stepped-down sinusoid.

4. Diodes 3 Microelectronics; Jieh-Tsorng Wu

 Diode’s Action in The Black Box (Ideal Diode)

 The diode behaves as a short circuit during the positive half cycle (voltage across it
tends to exceed zero), and an open circuit during the negative half cycle (voltage
across it is less than zero).

4. Diodes 4 Microelectronics; Jieh-Tsorng Wu

 Ideal Diode

 In an ideal diode, if the voltage across it tends to exceed zero, current flows.
 It is analogous to a water pipe with a valve that allows water to flow in only one
direction.

4. Diodes 5 Microelectronics; Jieh-Tsorng Wu

 Current-Voltage (I-V) Characteristics of an Ideal Diode
I ID

V
V R R= VD
I

V V
R =0⇒ I = =∞ R =∞⇒ I = =0
R R

4. Diodes 6 Microelectronics; Jieh-Tsorng Wu

 Diodes in Series

 Diodes cannot be connected in series randomly. For the circuits above, only (a)
can conduct current from A to C.

4. Diodes 7 Microelectronics; Jieh-Tsorng Wu

 Anti-Parallel Ideal Diodes

 If two diodes are connected in anti-parallel, it acts as a short for all voltages.

4. Diodes 8 Microelectronics; Jieh-Tsorng Wu

 Diode-Resistor Combination

VA > 0

VA < 0

 The I-V characteristic of this diode-resistor combination is zero for negative

voltages and Ohm’s law for positive voltages.

4. Diodes 9 Microelectronics; Jieh-Tsorng Wu

 Diode Implementation of OR Gate

VA = 3 V VB = 0 V ⇒ D1 = On D2 = Off ⇒ Vout = 3 V
VA = 0 V VB = 3 V ⇒ D1 = Off D2 = On ⇒ Vout = 3 V
VA = 3 V VB = 3 V ⇒ D1 = On D2 = On ⇒ Vout = 3 V
VA = 0 V VB = 0 V ⇒ D1 = Off D2 = Off ⇒ Vout = 0 V

 The circuit above shows an example of diode-implemented OR gate.

4. Diodes 10 Microelectronics; Jieh-Tsorng Wu

 Input/Output Characteristics

 When 𝑉𝑉𝑖𝑖𝑖𝑖 is less than zero, the diode opens, and 𝑉𝑉𝑜𝑜𝑜𝑜𝑜𝑜 = 𝑉𝑉𝑖𝑖𝑖𝑖 .
 When 𝑉𝑉𝑖𝑖𝑖𝑖 is greater than zero, the diode shorts, and 𝑉𝑉𝑜𝑜𝑜𝑜𝑜𝑜 = 0.

4. Diodes 11 Microelectronics; Jieh-Tsorng Wu

 Diode’s Application: Rectifier

If 𝑉𝑉𝑖𝑖𝑖𝑖 < 0, 𝑉𝑉𝑜𝑜𝑜𝑜𝑜𝑜 is floating. If 𝑉𝑉𝑖𝑖𝑖𝑖 < 0, 𝑉𝑉𝑜𝑜𝑜𝑜𝑜𝑜 = 0.

 A rectifier is a device that passes positive-half cycle of a sinusoid and blocks the
negative half-cycle or vice versa.

4. Diodes 12 Microelectronics; Jieh-Tsorng Wu

 Signal Strength Indicator

2π
Vin ( t ) = V p sin ωt ω =
T
 T
V
 p sin ω t for 0 ≤ t ≤
Vout ( t ) = 
2
0 T
for < t ≤ T
 2
T T /2 T /2
1 1 1 Vp Vp
=
Vout ,avg = ∫ Vout ( t ) ⋅ dt = ∫ V p sin ωt ⋅ dt = ( − cos ωt )
T 0 T 0 T ω 0
π

 The averaged value of a rectifier output can be used as a signal strength indicator
for the input, since 𝑉𝑉𝑜𝑜𝑜𝑜𝑜𝑜,𝑎𝑎𝑎𝑎𝑎𝑎 is proportional to 𝑉𝑉𝑝𝑝 , the input signal’s amplitude.

4. Diodes 13 Microelectronics; Jieh-Tsorng Wu

 Diode’s application: Limiter

4. Diodes 14 Microelectronics; Jieh-Tsorng Wu

 Limiter: When Battery Varies
𝑉𝑉𝑜𝑜𝑜𝑜𝑜𝑜,𝑎𝑎𝑎𝑎𝑎𝑎

4. Diodes 15 Microelectronics; Jieh-Tsorng Wu

 I-V Characteristic of Junction Diodes

I S ( eVD VT − 1)
kT
ID = I S : Saturation Current VT = : Thermal Voltage
q

 In the forward-bias region, at a given 𝐼𝐼𝐷𝐷 , the voltage 𝑉𝑉𝐷𝐷 decrease by approximately
2 mV for every 1℃ increase in temperature.

4. Diodes 16 Microelectronics; Jieh-Tsorng Wu

 Exponential Model and Ideal Model for Diode
ID

VD

Exponential Model Ideal Model

4. Diodes 17 Microelectronics; Jieh-Tsorng Wu

 Constant-Voltage Model for Diode

VD ≤ VD ,on

VD > VD ,on

 Diode operates as an open circuit if 𝑉𝑉𝐷𝐷 < 𝑉𝑉𝐷𝐷,on and a constant voltage source of
𝑉𝑉𝐷𝐷,on if 𝑉𝑉𝐷𝐷 > 𝑉𝑉𝐷𝐷,on , where 𝑉𝑉𝐷𝐷,on = 700 mV ~ 800 mV.

3. pn Junctions 18 Microelectronics; Jieh-Tsorng Wu

 Analyses Using Ideal Model and Constant-Voltage Model

For Vin > 0

R2
Vout = Vin
R1 + R2

Ideal Model

For Vin > VD ,on

For Vin > VD ,on
R2
Vout = Vin
R1 + R2
R1
+ VD ,on
Constant-Voltage Model R1 + R2

4. Diodes 19 Microelectronics; Jieh-Tsorng Wu

 Input/Output Characteristics with a Constant-Voltage Model

R2
−∞ ⇒ D1 =
Vin = Off ⇒ Vout = Vin
D1 = Off R1 + R2
R2
=Vout = Vin VD ,on =
⇒ D1 On
R1 + R2
R1 + R2
Vin > VD ,on ⇒ D1 =
On ⇒ Vout =
VD ,on
R2

4. Diodes 20 Microelectronics; Jieh-Tsorng Wu

 Example: Constant-Voltage Model Circuit 1
D1 = On D1 = Off

D1 =
On ⇒ Vout =
Vin + VD ,on
0 − Vout V + VD ,on VD ,on
I R1 = =
− in IR2 =
R1 R1 R2
-
I D=
1 I R1 − I R 2
 R 
I R1 = ⇒ Vin =
IR2 − 1 + 1  VD ,on ⇒ I D1 =0
 R2 
R1
D1 = Off ⇒ Vout = Vin
R1 + R2
 The break point where the slope changes is when the current across 𝑅𝑅1 is equal to
the current across 𝑅𝑅2 .
4. Diodes 21 Microelectronics; Jieh-Tsorng Wu
 Example: Constant-Voltage Model Circuit 2A
Vin =
−∞ D1 =
On D2 =
On
⇒ Vout =Vin − VD ,on − VB
𝑹𝑹𝟐𝟐 0 − Vout
=
IR2 >0
R2

=I R1
( −VB − VD ,on ) − VD ,on
<0
R1
I1 = I R 2 − I R1 > 0
⇒ I D1 , I D 2 Wrong Direction

Vin =
−∞ D1 =
On D2 = Off
V=
X Vin + VD ,on
𝑹𝑹𝟐𝟐 R2
Vout = VX ×
R1 + R2

4. Diodes 22 Microelectronics; Jieh-Tsorng Wu

 Example: Constant-Voltage Model Circuit 2B

𝑹𝑹𝟐𝟐 𝑹𝑹𝟐𝟐

𝑹𝑹𝟐𝟐

Vin =
−∞ D1 =
On D2 =
Off
0 − (Vin + VD ,on ) Vin + VD ,on
⇒ Vout VX ×
=
R2
R1 + R2
( in D,on ) R + R
=V + V
R2
I D1 =
R1 + R2
=
−
R1 + R2
1 2

Vin =
−VD ,on ⇒ I D1 0=
D1 = Off ⇒ Vout = 0 D2 Off

4. Diodes 23 Microelectronics; Jieh-Tsorng Wu

 Example: Constant-Voltage Model Circuit 2C

𝑹𝑹𝟐𝟐 𝑹𝑹𝟐𝟐
+𝑉𝑉𝐷𝐷𝐷 −

𝑹𝑹𝟐𝟐
+𝑉𝑉𝐷𝐷𝐷 −

Vin =
−VD ,on ⇒ I R1 = Off ⇒ Vout = 0 D2 =
0 D1 = Off
Vin > −VD ,on ⇒ D=
1 Off D=
2 Off ⇒ Vout= 0 VD =
2 Vin − VB
Vin > VD ,on + VB ⇒ D1 =Off D2 =On ⇒ Vout =Vin − VD ,on − VB
4. Diodes 24 Microelectronics; Jieh-Tsorng Wu
 Graphical and Iterative Analysis Using the Exponential Model

I D = I S eVD VT
VDD − VD VDD VD
=
ID = −
R R R

VDD − VD
ID =
R I D = I S eVD VT
Iteration using: Wrong Iteration:
VD = VT
ID V=
D VD − I D R
IS

4. Diodes 25 Microelectronics; Jieh-Tsorng Wu

 Iterative Analysis Using the Exponential Model
=I D1 I=
Se
VD 1 VT
I D 2 I S eVD 2 VT
I D 2 I S eVD 2 VT (VD 2 −VD1 ) VT I D 2 VD 2 − VD1
⇒ = =
VD 1 VT
e ⇒ ln =
I D1 I S e I D1 VT
ID2
⇒ VD 2 =VD1 + VT ln
I D1

=
Example: I S 1×10−15 =
A VT 26 mV=
VDD 5=
V R 1 kΩ
VDD − VD ID VDD − VD
Solve: =
I D I S eVD VT =
ID ⇒=
VD VT ln =
ID
R IS R
I Dx
VD1= 700 mV I D1= I S eVD1 VT= 0.49 mA ⇒ VDx= 700 mV + 26 mV × ln
0.49 mA
VDD − VD1 5 − 0.7
→ VD1 = 700 mV I D1 = = = 4.3 mA
R 1 kΩ
4.3 VDD − VD 2 5 − 0.7565
→ VD 2 =
700 mV + 26 mV × ln =
756.5 mV I D 2 = = =4.244 mA
0.49 R 1 kΩ
4.244 VDD − VD 3 5 − 0.7561
→ VD 3 700 mV=+ 26 mV × ln = 756.1 mV I D 3 = = 4.244 mA
0.49 R 1 kΩ
4. Diodes 26 Microelectronics; Jieh-Tsorng Wu
 Two Diodes in Parallel

=I D1 I= eVD VT
I I eVD VT

+ S1 D2 S2

I in = I D1 + I D 2 = ( I S 1 + I S 2 ) eVD VT
VD
V1 − VD
− I in =
R1

I D1 I=
S1eVD VT
I D2 I S2 eVD VT

I D1 I S 1
I in I=
D1 + I D2
ID2 IS 2
I S1 IS 2
I D1 = I in × ID2 = I in ×
I S1 + I S 2 I S1 + I S 2

 In this example, since the two diodes have different cross-section areas, only
exponential model can be used.

4. Diodes 27 Microelectronics; Jieh-Tsorng Wu

 Cell Phone Adapter
=Vad 3=
V Vout 2.4 V
3 − 2.4
⇒ I X= = 6 mA
100
Vout
=
VD = 800 mV = I D 6 mA
3
=I D I=
S eVD VT
VT 26 mV
⇒ I S = 2.602 ×10−16 A
= =
Vad 3.1 V I S 2.602 ×10−16 A Find Vout
3.1 − 2.4
→ VD 800 mV
= = Vout 3 × VD =
2.4=
V IX = 7 mA
100
I 3.1 − 2.412
→ =
VD VT ln D =
804 mV V=
out 3=
VD 2.412 V =I X = 6.88 mA
IS 100
ID
→ =
VD VT ln = 803.6 mV V= out 3=
VD 2.411 V
IS
 if 𝐼𝐼𝑋𝑋 changes, iterative method is often needed to obtain 𝑉𝑉𝑜𝑜𝑜𝑜𝑜𝑜 , thus motivating a
simpler technique.
4. Diodes 28 Microelectronics; Jieh-Tsorng Wu
 Small-Signal Analysis

∆VD ∆V
 1 ⇒ e ∆VD VT ≈ 1 + D
VT VT
I D1 = I S eVD1 VT
 ∆V  I D1
I S e(
VD 1 + ∆VD ) VT
ID2 =
I S eVD 2 VT = I S eVD1 VT e ∆VD VT =
= I D1 1 + D =
 D1
I + ∆VD
 VT  VT
I D1
⇒ I D 2 = I D1 + ∆I D ∆I D = ∆VD
VT
 Small-signal analysis is performed around a bias point by perturbing the voltage by
a small amount and observing the resulting linear current perturbation.

4. Diodes 29 Microelectronics; Jieh-Tsorng Wu

 Small-Signal Analysis in Detail

I D = I S eVD VT

∆I D  dI  I
ID2 =I D1 + ∆I D =I D1 + × ∆VD =I D1 +  D  × ∆VD =I D1 + D1 × ∆VD
∆VD  dVD  VT
 VD =VD 1 

dI D 1 1 I D1 1
= I S eVD VT = I S eVD1=
VT
= gd =
dVD VD
VT
V= V V
VT VT rd
D1 D D1

4. Diodes 30 Microelectronics; Jieh-Tsorng Wu

 Large-Signal and Small-Signal Circuit Models

Large-Signal Circuit Model DC Circuit Model

Vdd =VDD + ∆VDD =VDD + vdd

I d =I D + ∆I D =I D + id
Vd =VD + ∆VD =VD + vd
dI d I D 1 V
g=
d = =
rd = T
dVd VT gd I D Small-Signal Circuit Model

4. Diodes 31 Microelectronics; Jieh-Tsorng Wu

 Small Sinusoidal Analysis

V p cos ωt
V0 + V p cos ωt
V (t ) = I d ( t=
) I 0 + I p cos ωt = I S e V0 VT
+
rd
 If a sinusoidal voltage with small amplitude is applied, the resulting current is also a
small sinusoid around a DC value.

4. Diodes 32 Microelectronics; Jieh-Tsorng Wu

 Cause and Effect

dI D dVD
∆I D = × ∆VD ∆VD = × ∆I D
dVD dI D ID
VD

= g d × ∆VD = rd × ∆I D
−1
dI D ID dVD  dI  VT
=gd = =rd =  D
= 
dVD V VT dI D I  dVD V  ID
D
D  D 

4. Diodes 33 Microelectronics; Jieh-Tsorng Wu

 Adapter Example Revisited 1

I=
D I S eVD VT I=
X I=
D Vad − 3VD Vad = 3.1 V
IS =
2.602 ×10−16 A VT 26 mV ⇒ vad = 3.1 V − 3 V = 100 mV
= =
VD 800 mV I D 6 mA vout = vad ×
3rd
V= 3=
VD 2.4 V R1 + 3rd
out
13
VT 26 mV = 100 mV × = 11.5 mV
=
rd = = 4.33 Ω 100 + 13
ID 6 mA
=
Vout 2.4 V + 11.5 mV = 2.4115 V

4. Diodes 34 Microelectronics; Jieh-Tsorng Wu

 Adapter Example Revisited 2

IL

I=
D I S eVD VT
I=
X I=
D Vad − 3VD = =
I L 0.5 mA vad 0 V
IS =
2.602 ×10−16 A VT 26 mV vout = − I L × ( 3rd  R1 )
I L = 0 mA −0.5 mA × (13  100 ) Ω
=
VD = 800 mV I D = 6 mA = −0.5 mA × 11.5 Ω = −5.75 mV
V=
out 3=
VD 2.4 V =
Vout 2.4 V + vout
VT 26 mV = 2.4 V − 5.75 mV = 2.394 V
=
rd = = 4.33 Ω
ID 6 mA

4. Diodes 35 Microelectronics; Jieh-Tsorng Wu