Microelectronics

Cascode Stages

2019/2/25

Jieh-Tsorng Wu

National Chiao-Tung University

Department of Electronics Engineering
 Outline
1. Review of Basic BJT and MOSFET Amplifiers
2. Cascode as a Current Source
3. Cascode as an Amplifier

14. Cascode Stages 2 Microelectronics; Jieh-Tsorng Wu

 BJT in Active Mode

 VCE 
=IC I S e VBE VT
1 + 
 V A 

1
I= I S eVBE VT
I= IC + I B
B
β E

VBE > 0 VBC < 0 VCE > VCE , sat

IC kT
= =
g m Transconductance = VT
VT q
β
rπ =
gm
VA
= =
ro Output Resistance
IC
14. Cascode Stages 3 Microelectronics; Jieh-Tsorng Wu
 MOSFET in Active Mode

𝐼𝐼𝐷𝐷 I
=
1 W
µnCox Vov2 (1 + λVDS )
D
2 L
Vov = VGS − VTH > 0 VDS > Vov 𝐼𝐼𝐷𝐷

W
=g m µnCox (VGS − VTH )
L
W 2I D
= 2 µnCox I D
=
L VGS − VTH
1
g=
o = λID
ro

14. Cascode Stages 4 Microelectronics; Jieh-Tsorng Wu

 Input and Output Impedance

14. Cascode Stages 5 Microelectronics; Jieh-Tsorng Wu

 Common-Emitter Stage

Av = − g m × ( RC  ro )
Rout = RC  ro
Rin = rπ

14. Cascode Stages 6 Microelectronics; Jieh-Tsorng Wu

 Common-Emitter Stage with Emitter Degeneration
iout gm gm
𝑰𝑰𝒐𝒐𝒐𝒐𝒐𝒐 G= = ≈
1  1 + g m RE
m
vin
1 +  + g m  RE
 rπ 
Rout ro + ( RE  rπ ) + g m ro ( RE  rπ )
=
≈ ro 1 + g m ( RE  rπ ) 

− RC − RC
=Av ≈
1 β +1 RB 1 RB
+ RE + + RE +
gm β β gm β
Rin = RB + rπ + ( β + 1) RE

14. Cascode Stages 7 Microelectronics; Jieh-Tsorng Wu

 Common-Base Stage
VCC
vout
RC =
Av = g m RC
Vout
vin
VB Q1
11
=Rin ≈
1 gm
gm +
Vin rπ
VCC
RC
Vout β RC RC
RB = Av ≈
VB Q1
( β + 1) RE + rπ + RB 1 R
+ RE + B
gm β +1
RE rπ + RB 1 R
Rin = RE + ≈ RE + + B
Vin β +1 gm β + 1

14. Cascode Stages 8 Microelectronics; Jieh-Tsorng Wu

 Common-Collector Stage (Emitter Follower)
RE RE
=Av ≈
r 1
RE + π RE +
β +1 gm
Rin= rπ + ( β + 1) RE
1 1
Rout = rπ   RE ≈  RE
gm gm

RE
Av =
1 R
RE + + S
gm β + 1
Rin = RS + rπ + ( β + 1) RE
 1 RS 
Rout = +   RE
 gm β + 1 
14. Cascode Stages 9 Microelectronics; Jieh-Tsorng Wu
 Common-Source Stage
vout
Av = = − g m ( RD  ro )
𝑣𝑣𝑖𝑖𝑖𝑖 𝑣𝑣𝑜𝑜𝑜𝑜𝑜𝑜 vin
Rin = ∞
vX
=
Rout = RD  ro
iX

g R RD
Av =
− m D = −
1 + g m RS 1
+ RS
gm
vout
Rout = =ro + RS + g m ro RS
id 1
=RS + ro (1 + g m RS ) =ro + RS (1 + g m ro )

14. Cascode Stages 10 Microelectronics; Jieh-Tsorng Wu

 Common-Gate Stage

Assume λ = 0
Av = g m RD
1
Rin =
gm
Rout = RD

vout g m RD RD
=
Av = =
vin 1 + g m RS 1
+ RS
gm
1
R=
in RS +
gm
vout
Rout = =ro + RS + g m ro RS
id 1
14. Cascode Stages 11 Microelectronics; Jieh-Tsorng Wu
 Common-Drain Stage (Source Follower)

ro  RL
Av =
1
+ ( ro  RL )
gm
1 1
=Rout  ro  RL ≈  RL
gm gm

14. Cascode Stages 12 Microelectronics; Jieh-Tsorng Wu

 CS and CE Amplifiers with Current-Source Loads

Av = − g m1 × ( ro1  ro 2 )
Rout = ro1  ro 2

 To increase 𝐴𝐴𝑣𝑣 , want to increase 𝑟𝑟𝑜𝑜𝑜 and 𝑟𝑟𝑜𝑜𝑜 .

 A current source need headroom (𝑉𝑉𝑚𝑚𝑚𝑚𝑚𝑚 ) to maintain a
constant out current.
 A real current source exhibits output resistance effect.

14. Cascode Stages 13 Microelectronics; Jieh-Tsorng Wu

 Supply-Independent Biasing Using Current Source

RS = ∞ RS = ro 2
RS ro 2
=Av = 1 Av =
1 1
+ RS + ro 2
gm gm

 If 𝑅𝑅𝑆𝑆 is replaced by a current source, drain current 𝐼𝐼𝐷𝐷 becomes independent of

supply voltage.

14. Cascode Stages 14 Microelectronics; Jieh-Tsorng Wu

 Boosted Output Impedances by Emitter (Source) Degeneration

ro + ( RE  rπ ) + g m ro ( RE  rπ )
Rout1 = Rout 2 =ro + RS + g m ro RS

( RE  rπ ) + ro  g m ( RE  rπ ) + 1 ro
= =RS + ro (1 + g m RS )

= ro + (1 + g m ro )( RE  rπ ) ro RS (1 + g m ro )
=+

 The voltage drop across the degeneration resistor increases the 𝑉𝑉𝑚𝑚𝑚𝑚𝑚𝑚 of a current
source.

14. Cascode Stages 15 Microelectronics; Jieh-Tsorng Wu

 Bipolar Cascode Stage

ro1 + ( ro 2  rπ 1 ) + g m1ro1 ( ro 2  rπ 1 ) ≈ g m1ro1 ( ro 2  rπ 1 )

Rout =

14. Cascode Stages 16 Microelectronics; Jieh-Tsorng Wu

 Bipolar Cascode Stage Example
= mA VT 26 mV β ==
Let I C 1= 100 VA 5 V
IC 1 β VA
g=
m =  =
rπ = 2.6 kΩ =
ro = 5 kΩ
VT 26 gm IC
Rout ≈ g m1ro1 × ( ro 2  rπ 1 ) = 192 ×1.71 = 328 kΩ

= mA VT 26 mV β = 100
Let I C 1=
=VA1 5=
V VA 2 50 V
β
Rout ≈ g m1ro1 ( ro 2  rπ 1 )
IC 1
g=
m1 =  r=
π1 = 2.6 kΩ
VT 26 gm
VA1 VA 2
=
ro1 = 5 kΩ =
ro 2 = 50 kΩ
IC IC
Rout ≈ g m1ro1 × ( ro 2  rπ 1 ) = 192 × 2.47 = 475 kΩ

14. Cascode Stages 17 Microelectronics; Jieh-Tsorng Wu

 Maximum Bipolar Cascode Output Impedance

If RE → ∞
Rout ,max = ro + ( RE  rπ ) + g m r ( RE  rπ )
≈ ro1 + rπ 1 + g m1ro1rπ 1
≈ g m1rπ 1ro1
≈ β1ro1

 The maximum output impedance of a bipolar cascode is bounded by the ever-

present 𝑟𝑟𝜋𝜋 between emitter and ground of Q1.

14. Cascode Stages 18 Microelectronics; Jieh-Tsorng Wu

 Example: Output Impedance

ro 2 + ( RE  rπ 2 ) + g m 2 ro 2 ( RE  rπ 2 ) ≈ g m 2 ro 2 ( RE  rπ 2 )
RoutA =
Want Rout ≈ g m1ro1 ( RoutA  rπ 1 ) = 2 g m1ro1 ( ro 2  rπ 1 )
2ro 2 rπ 2
2 ( ro 2  rπ 1 ) ⇒ RoutA =
⇒ RoutA  rπ 1 =
rπ 1 − ro 2

 Typically 𝑟𝑟𝜋𝜋 is smaller than 𝑟𝑟𝑜𝑜 , so in general it is impossible to double the output
impedance by degenerating Q2 with a resistor.

14. Cascode Stages 19 Microelectronics; Jieh-Tsorng Wu

 PNP Cascode Stage

ro1 + ( ro 2  rπ 1 ) + g m1ro1 ( ro 2  rπ 1 ) ≈ g m1ro1 ( ro 2  rπ 1 )

Rout =

14. Cascode Stages 20 Microelectronics; Jieh-Tsorng Wu

 Another Interpretation of Bipolar Cascode

 Instead of treating cascode as Q2 degenerating Q1, we can also think of it as Q1

stacking on top of Q2 (current source) to boost Q2’s output impedance.

14. Cascode Stages 21 Microelectronics; Jieh-Tsorng Wu

 False Cascodes

1 1
ro1 + ( RE  rπ 1 ) + g m1ro1 ( RE  rπ 1 )
Rout = RE =  ro 2 ≈
gm2 gm2
 1  g m1
≈ ro1 + g m1ro1   rπ 1  ≈ ro1 + ro1 ≈ 2ro1
 gm2  gm2

 When the emitter of Q1 is connected to the emitter of Q2, it’s no longer a cascode
since Q2 becomes a diode-connected device instead of a current source.

14. Cascode Stages 22 Microelectronics; Jieh-Tsorng Wu

 MOS Cascode Stage

Rout ro=
1 + RS + g m1ro1 RS ro1 + ro 2 + g m1ro1ro 2 RS =
ro 2
≈ g m1ro1ro 2

14. Cascode Stages 23 Microelectronics; Jieh-Tsorng Wu

 MOS Cascode Stage Example

µnCox = 100 μA/V 2 λ = 0.1 V −1

= =
Want I D 0.5 mA Rout 500 kΩ
1
Rout ≈ g m1ro1ro 2 r= ro= = 20 kΩ
o1 2
λ ID
500k 1 W
⇒ g= = = 2 µnCox ID
20k × 20k 800
m1
L
W
Rout ≈ g m1ro1ro 2 ⇒ = 15.6
L
1
g m1ro1 = × 20k = 25  1
800
Rout ≈ g m1ro1ro 2 = 25 × 20k = 500 kΩ

14. Cascode Stages 24 Microelectronics; Jieh-Tsorng Wu

 Another Interpretation of MOS Cascode

 Similar to its BJT counterpart, MOS cascode can be thought of as stacking a

transistor on top of a current source.
 Unlike BJT cascode, the output impedance is not limited by β.

14. Cascode Stages 25 Microelectronics; Jieh-Tsorng Wu

 PMOS Cascode Stage

=
Rout ro1 + RS + g m1ro1 RS ro1 + ro 2 + g m1ro1ro 2 ≈ g m1ro1ro 2

14. Cascode Stages 26 Microelectronics; Jieh-Tsorng Wu

 Example: Parasitic Resistance

Without RP
Rout = ro1 + ro 2 + g m1ro1ro 2

With RP
=
Rout ( ro1  RP ) + ro 2 + g m1 ( ro1  RP ) ro 2

 𝑅𝑅𝑃𝑃 will lower the output impedance, since its parallel combination with 𝑟𝑟𝑜𝑜𝑜 will
always be lower than 𝑟𝑟𝑜𝑜𝑜 .

14. Cascode Stages 27 Microelectronics; Jieh-Tsorng Wu

 Short-Circuit Transconductance

iout
Gm =
vin vout = 0

 The short-circuit transconductance of a circuit measures its strength in converting

input voltage to output current.

14. Cascode Stages 28 Microelectronics; Jieh-Tsorng Wu

 Transconductance Example

iout id 1
=
Gm = = g m1
vin v =0 vgs1
out

14. Cascode Stages 29 Microelectronics; Jieh-Tsorng Wu

 Derivation of Voltage Gain

iout = Gm vin
vout =
−iout Rout =
−Gm vin Rout
vout
= −Gm Rout
vin

 By representing a linear circuit with its Norton equivalent, the relationship between
𝑉𝑉𝑜𝑜𝑜𝑜𝑜𝑜 and 𝑉𝑉𝑖𝑖𝑖𝑖 can be expressed by the product of 𝐺𝐺𝑚𝑚 and 𝑅𝑅𝑜𝑜𝑜𝑜𝑜𝑜 .

14. Cascode Stages 30 Microelectronics; Jieh-Tsorng Wu

 Example: Voltage Gain

iout ic1 vx
=
Gm = = g m1 R=
out = ro1
vin v 0=
vbe1 ix v 0
out in

vout
Av = =
−Gm Rout =
− g m1ro1
vin
14. Cascode Stages 31 Microelectronics; Jieh-Tsorng Wu
 Comparison between Bipolar Cascode and CE Stage

=Gm1 g=
m1 Rout1 ro1 Gm 2 ≈ g m1 Rou 2 > ro1
Av1 = −Gm1 Rout1 Av 2 =
−Gm 2 × Rout 2 > Av1
I V V
=
− g m1 ⋅ ro1 =
− D⋅ A= − A
VT I D VT
 Since the output impedance of bipolar cascode is higher than that of the CE stage,
we would expect its voltage gain to be higher as well.

14. Cascode Stages 32 Microelectronics; Jieh-Tsorng Wu

 Voltage Gain of Bipolar Cascode Amplifier

gm 2 + go 2
Gm = g m1 × ≈ g m1
g o1 + gπ 2 + g m 2 + g o 2
ro 2 + ( ro1  rπ 2 ) + g m 2 ro 2 ( ro1  rπ 2 ) ≈ g m 2 ro 2 ( ro1  rπ 2 )
Rout =
Av = − g m1 g m 2 ro 2 ( ro1  rπ 2 )
−Gm Rout =
 Since 𝑟𝑟𝑜𝑜 is much larger than 1⁄𝑔𝑔𝑚𝑚 , most of 𝐼𝐼𝐶𝐶,𝑄𝑄𝑄 flows into the diode-connected Q2.
Using 𝑅𝑅𝑜𝑜𝑜𝑜𝑜𝑜 as before, 𝐴𝐴𝑣𝑣 is easily calculated.
14. Cascode Stages 33 Microelectronics; Jieh-Tsorng Wu
 Alternate View of Cascode Amplifier

 A bipolar cascode amplifier is also a CE stage in series with a CB stage.

14. Cascode Stages 34 Microelectronics; Jieh-Tsorng Wu

 Practical Cascode Stage

Rout =ro 3   ro 2 + ( ro1  rπ 2 ) + g m 2 ro 2 ( ro1  rπ 2 ) 

≈ ro 3   g m 2 ro 2 ( ro1  rπ 2 ) 

 Since no current source can be ideal, the output impedance drops.

14. Cascode Stages 35 Microelectronics; Jieh-Tsorng Wu

 Improved Cascode Stage

Rop ≈ g m 3 ro 3 ( ro 4  rπ 3 )
Ron ≈ g m 2 ro 2 ( ro1  rπ 2 )

− g m1 Rout = − g m1 × ( Rop  Ron )

Av =

 In order to preserve the high output impedance, a cascode PNP current source is
used.

14. Cascode Stages 36 Microelectronics; Jieh-Tsorng Wu

 MOS Cascode Amplifier

go 2 + gm 2
Gm = g m1 × ≈ g m1
g o1 + g o 2 + g m 2
Rout= ro1 + ro 2 + g m 2 ro 2 ro1 ≈ g m 2 ro 2 ro1
Av = −Gm × Rout ≈ g m1ro1 × g m 2 ro 2

14. Cascode Stages 37 Microelectronics; Jieh-Tsorng Wu

 Improved MOS Cascode Amplifier

Rop ≈ g m 3 ro 3 ro 4
Ron ≈ g m 2 ro 2 ro1

Av = − g m1 Rout = − g m1 × ( Rop  Ron )

 Similar to its bipolar counterpart, the output impedance of a MOS cascode amplifier
can be improved by using a PMOS cascode current source.

14. Cascode Stages 38 Microelectronics; Jieh-Tsorng Wu

 MOS Cascode Amplifier Example
µnCox = 100 μA/V 2 λn = 0.1 V −1
µ p Cox = 50 μA/V 2 λ p = 0.15 V −1
W  W 
=
  30 =  =
50 I D 0.5 mA
 L 1,2  L 3,4
W 1 1
g m1,2 = 2µnCox = ID =
ro1,2 = 20 kΩ
L 577 Ω λn I D
W 1 1
g= 2µ pnCox = ID =
ro1,2 = 13.3 kΩ
m 3,4
L 707 Ω λn I D
20k × 20k
Ron ≈ g m 2 ro 2 ro1 = = 693 kΩ
577
13.3k ×13.3k
Rop=≈ g m 3 ro 3 ro 4 = 250 kΩ
707
693k  250k
Av = − g m1 Rout = − g m1 × ( Rop  Ron ) =
− =
−318
577
14. Cascode Stages 39 Microelectronics; Jieh-Tsorng Wu