H11C4/H11C5/H11C6

Photo SCR Optocoupler

Dimensions in Inches (mm)
pin one ID
FEATURES 3 2 1
• Turn On Current (IFT), 5.0 mA Typical Anode 1 6 Gate
.248 (6.30)
• Gate Trigger Current (IGT), 20 mA Typical .256 (6.50)
• Surge Anode Current, 5.0 A Cathode 2 5 Anode
• Blocking Voltage, 400 V Gate Trigger Voltage 4 5 6
(VGT), 0.6 V Typical .335 (8.50) NC 3 4 Cathode
• Isolation Voltage, 5300 VRMS .343 (8.70)
• Solid State Reliability .300 (7.62)
.039 .048 (0.45)
.022 (0.55) typ.
• Standard DIP Package (1.00)
Min.
• Underwriters Lab File #E52744 .130 (3.30)
.150 (3.81)
DESCRIPTION 4° 18°
typ. .114 (2.90)
The H11C4/H11C5/H11C6 are optically coupled .031 (0.80) min. .130 (3.0)
3°–9° .010 (.25)
SCRs with a Gallium Arsenide infrared emitter and
.031 (0.80) typ.
a silicon photo SCR sensor. Switching can be .018 (0.45) .035 (0.90)
.022 (0.55) .300–.347
achieved while maintaining a high degree of isola- .100 (2.54) typ. (7.62–8.81)
tion between triggering and load circuits. These
optocouplers can be used in SCR triac and solid
Characteristics TA=25°C
state relay applications where high blocking volt-
Parameters Sym Min. Typ. Max. Unit Condition
ages and low input current sensitivity are required.
Emitter
The H11C4 and H11C5 are identical and have a
Forward Voltage VF — 1.2 1.5 V IF=10 mA
maximum turn-on-current of 11 mA. The H11C6 has
a maximum of 14 mA. Reverse Current IR — — 10 µA VR=3.0 V

Maximum Ratings Capacitance CO — 50 — pF VR=0, f=1.0 MHz

Emitter Detector
Peak Reverse Voltage ...................................... 6.0 V Forward Blocking VDM 400 — — V RGK=10 KΩ
Continuous Forward Current ..........................60 mA Voltage TA=100°C
Peak Forward Current (1.0 ms, 1% Duty Cycle).....3.0 A Reverse Blocking VDM 400 — — V Id=150 µA
Power Dissipation at 25°C........................... 100 mW Voltage
Derate Linearly from 25°C ..................... 1.33 mW/°C On-state Voltage Vt — 1.1 1.3 V IT=300 mA
Detector Holding Current IH — — 500 µA RGK=27 KΩ
Reverse Gate Voltage....................................... 6.0 V VFX=50 V
Anode Voltage (DC or AC Peak) ..................... 400 V Gate Trigger VGT — 0.6 1.0 V VFX=100 V
RMS Forward Current...................................300 mA Voltage RGK=27 KΩ
Surge Anode Current (10 ms duration) ............5.0 A RL=10 KΩ
Peak Forward Current (100 µs, 1% Duty Cycle) .. 10 A Forward Leakage IR — 150 — µA RGK=10 KΩ
Surge Gate Current (5.0 ms duration)..........200 mA Current VRM=400 V
Power Dissipation, 25°C case ................... 1000 mW IF=0, TA=100°C
Derate Linearly from 25°C ..................... 13.3 mW/°C Reverse Leakage IR — 150 — µA RGK=10 KΩ
Package Current VRX=400 V
Isolation Test Voltage............................... 5300 VRMS IF=0, TA=100°C
(between emitter and detector referred to Gate Trigger Current IGT — 20 50 µA VFX=100 V
Standard Climate23°C/50%RH, DIN 50014) RGK=27 KΩ,
Creepage .................................................. ≥7.0 mm RL=10 KΩ
Clearance .................................................. ≥7.0 mm Capacitance — — —
Comparative Tracking Index per Anode to Gate 20 pF V=0, f=1.0 MHz
DIN IEC 112/VDE 0303, part 1 ....................... 175 Gate to Cathode 350 pF
Isolation Resistance Package
VIO=500 V, TA=25°C................................ ≥1012 Ω Turn-0n Current IFT — —
VIO=500 V, TA=100°C.............................. ≥1011 Ω H11C4/H11C5 20 mA VDM=50 V
Total Package Dissipation ........................... 400 mW H11C6 30 mA RGK=10 KΩ
Derate Linearly from 25°C ....................... 5.3 mW/°C Turn-0n Current IFT —
Operating Temperature Range...... –55°C to +100°C H11C4/H11C5 5.0 11 mA VDM=100 V
Storage Temperature Range ......... –55°C to +150°C H11C6 7.0 14 mA RGK=27 KΩ
Lead Soldering Time at 260°C ..................... 10 sec.
 2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178 1 March 7, 2000-20