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Evaluation of Reactive Ion Etching Processes For Fabrication of GaAs Algaas Devices
Evaluation of Reactive Ion Etching Processes For Fabrication of GaAs Algaas Devices
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Abstract
Reactive ion etching (RIE) was used for the fabrication of GaAs/AlGaAs optoelectronic devices (laser diodes and photodetec-
tors) for optical interconnect applications. Smooth, vertical sidewalls with a smooth surface at the field were obtained after
optimizing RIE conditions in BCl3-formed plasma. Accurate in-situ monitoring of the etching process was realized by laser
interferometry end-point detection. This led to good process control and reproducibility of the demanding fabrication of the
optoelectronic devices. The RIE etching process did not affect the electrical properties of the device by increasing the surface
recombination currents. Lasers with etched mirrors exhibited a threshold current density of 970 A cm − 2, which is one of the best
values ever reported. The feasibility of a simple technology for the fabrication of optoelectronic circuits, based on a BCl3 RIE
process for laser mirror etching, has been demonstrated. © 2001 Elsevier Science B.V. All rights reserved.
Keywords: Reactive ion etching; End-point detection; Laser diodes; Multiple quantum wells; Optical interconnects
0921-5107/01/$ - see front matter © 2001 Elsevier Science B.V. All rights reserved.
PII: S 0 9 2 1 - 5 1 0 7 ( 0 0 ) 0 0 5 9 3 - 6
78 E. Aperathitis et al. / Materials Science and Engineering B80 (2001) 77–80
Acknowledgements
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