AO4952

30V Dual Asymmetric N-Channel AlphaMOS

General Description Product Summary

• Latest Trench Power AlphaMOS (αMOS LV) technology Q1 Q2

• Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V
• Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 11A 11A
• Low Gate Charge
RDS(ON) (at VGS=10V) <10.5mΩ <11.5mΩ
• High Current Capability
• RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V) <15.5mΩ <16.5mΩ

Application 100% UIS Tested

100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial

SOIC-8
Q1:
Top View Bottom View SRFETTM D1 D2
Soft Recovery MOSFET:
Top View Integrated Schottky Diode

D2 G2
D2 S2/D1
G1 S2/D1
S1 S2/D1 G1 G2

S1 S2
Pin1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max Q1 Max Q2 Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain TA=25°C 11 11
ID
Current TA=70°C 9 9 A
Pulsed Drain Current C IDM 75 74
Avalanche Current C IAS 18 15 A
Avalanche Energy L=0.1mH C EAS 16 11 mJ
VDS Spike 100ns VSPIKE 36 36 V
TC=25°C 2 2
PD W
Power Dissipation B TC=70°C 1.3 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 74 90 °C/W
Maximum Junction-to-Case Steady-State RθJL 32 40 °C/W

Rev.1.0: February 2013 www.aosmd.com Page 1 of 8

 AO4952

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 V
VDS=30V, VGS=0V 0.5
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C 100
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 1.8 2.5 V
VGS=10V, ID=11A 8.3 10.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 11.8 15
VGS=4.5V, ID=9A 12.2 15.5 mΩ
gFS Forward Transconductance VDS=5V, ID=11A 52 S
VSD Diode Forward Voltage IS=0.2A,VGS=0V 0.45 0.65 V
IS Maximum Body-Diode Continuous Current 2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 605 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 275 pF
Crss Reverse Transfer Capacitance 37 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1 2 3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 10.2 15 nC
Qg(4.5V) Total Gate Charge 4.9 8 nC
VGS=10V, VDS=15V, ID=11A
Qgs Gate Source Charge 2 nC
Qgd Gate Drain Charge 2.3 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.36Ω, 3 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17.5 ns
tf Turn-Off Fall Time 3 ns
trr Body Diode Reverse Recovery Time IF=11A, dI/dt=500A/µs 11 ns
Qrr Body Diode Reverse Recovery Charge IF=11A, dI/dt=500A/µs 12.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.1.0: February 2013 www.aosmd.com Page 2 of 8

 AO4952

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 80
10V 5V
VDS=5V
7V
60 4.5V 60

4V
ID (A)

ID(A)
40 40

125°C
20 20
25°C
VGS=3V

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

20 1.6

Normalized On-Resistance
16 VGS=10V
VGS=4.5V 1.4 ID=11A
Ω)
RDS(ON) (mΩ

12
1.2
8
VGS=4.5V
VGS=10V 1 ID=9A
4

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E)
(Note E)

25 1.0E+01
ID=11A
ID=11.5A
1.0E+00
20
125°C
1.0E-01
Ω)

15
RDS(ON) (mΩ

125°C
IS (A)

1.0E-02
125°C
10
1.0E-03
25°C
5 25°C 1.0E-04
25°C
0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO4952

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1000
VDS=15V
ID=11A
8 800

Capacitance (pF)
Ciss
VGS (Volts)

6 600

4 400
Coss

2 200

Crss
0 0
0 3 6 9 12 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 10000
TA=25°C

100.0
10µs 1000
RDS(ON)
limited
Power (W)
ID (Amps)

10.0
100us
100
1.0 1ms
TJ(Max)=150°C
TA=25°C 100ms 10
0.1 DC

0.0 1
0.01 0.1 1 10 100 1E-05 0.001 0.1 10 1000
VDS (Volts) Pulse Width (s)

VGS> or equal to 4.5V Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Ambient (Note H)
Safe Operating Area (Note F)
10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=90°C/W

0.1

PD
0.01 Single Pulse
Ton
T

0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)

Rev.1.0: February 2013 www.aosmd.com Page 4 of 8

 AO4952

Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 1.8 2.2 V
VGS=10V, ID=11A 9 11.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 12.4 15.8
VGS=4.5V, ID=9A 12.8 16.5 mΩ
gFS Forward Transconductance VDS=5V, ID=11A 40 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 542 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 233 pF
Crss Reverse Transfer Capacitance 31 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1 2 3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 9 12.5 nC
Qg(4.5V) Total Gate Charge 4.3 6 nC
VGS=10V, VDS=15V, ID=11A
Qgs Gate Source Charge 2.2 nC
Qgd Gate Drain Charge 1.7 nC
tD(on) Turn-On DelayTime 4 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.36Ω, 3.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 18 ns
tf Turn-Off Fall Time 3 ns
trr Body Diode Reverse Recovery Time IF=11A, dI/dt=500A/µs 9.7 ns
Qrr Body Diode Reverse Recovery Charge IF=11A, dI/dt=500A/µs 11.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.1.0: February 2013 www.aosmd.com Page 5 of 8

 AO4952

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 50
10V
4.5V VDS=5V
40 40
6V 4V

30 30
ID (A)

ID(A)
3.5V
20 20
125°C

10 10 25°C
VGS=3V
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

20 1.6

Normalized On-Resistance
16 VGS=4.5V VGS=10V
1.4
ID=11A
Ω)
RDS(ON) (mΩ

12
1.2
8
VGS=10V VGS=4.5V
1
4 ID=9A

0 0.8
0 5 10
15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature
(Note E)

25 1.0E+01
ID=11A
1.0E+00
20

1.0E-01
Ω)

125°C
RDS(ON) (mΩ

IS (A)

15 125°C

1.0E-02
10
25°C
1.0E-03

5 25°C
1.0E-04

0
1.0E-05
2 4 6 8 10
0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
(Note E) Figure 6: Body-Diode Characteristics (Note E)

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 AO4952

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 800
VDS=15V
ID=11A
8
600 Ciss

Capacitance (pF)
VGS (Volts)

6
400
4
Coss
200
2
Crss

0 0
0 2 4 6 8 10 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

10000
1000.0
TA=25°C

100.0
10µs 1000
RDS(ON)
Power (W)

limited
ID (Amps)

10.0
100µs
100

1.0 1ms
DC 10ms
TJ(Max)=150°C 10
0.1 TA=25°C

0.0 1
0.01 0.1 1 10 100 1E-05 0.001 0.1 10 1000
VDS (Volts) Pulse Width (s)

VGS> or equal to 4.5V Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe Ambient (Note H)
Operating Area (Note F)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=90°C/W

0.1
PD

0.01
Ton
Single Pulse T

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)

Rev.1.0: February 2013 www.aosmd.com Page 7 of 8

 AO4952

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev.1.0: February 2013 www.aosmd.com Page 8 of 8