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Bipolar Junction Transistor
Bipolar Junction Transistor
Bipolar Junction Transistor
DEFINITION
A Bipolar Junction Transistor, or BJT, is a solid-state device in which the current flow
between two terminals (the collector and the emitter) is controlled by the amount of current
that flows through a third terminal (the base).
APPLICATION
These are the transistors that are preferred in the logic circuits
It is used in the circuits of amplification
These are preferred in the oscillation circuits
MATERIAL MADE UP OF
Bipolar junction transistors usually contain silicon
Impurities are commonly added to silicon via doping to make the layer behave as desired
CONDUCTION RANGE
Their range around 100, but can range from 50 to 200
BJT
JUNCTION-GATE FIELD EFFECT-TRANSISTOR(JFET)
DEFINITION
A JFET or junction field-effect transistor is a FET in which the gate is created by reverse-
biased junction as opposed to the MOSFET which creates a junction via a field generated by
conductive gate, separated from the gate region by a thin insulator.
APLLICATION
A JFET can be used as a switch.
JFET can be used as an amplifier.
JFET can be used as a chopper.
JFET can be used as a buffer.
JFET can be used as voltage-controlled resistors in the operational amplifiers.
MATERIALS MADE UP OF
N – Channel JFET −It consists of an n – type silicon bar forming the conduction channel for
the charge carriers. The pn – junction forming diodes are connected internally and a common
terminal called GATE is taken out from the p - Region.
CONDUCTIVE RANGE
Typical values vary from −0.3 V to −10 V.
JFET