TA8246AHQ

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA8246AHQ
Dual Audio Power Amplifier 6 W × 2 Ch

TA8246AHQ is dual power amplifier for Consumer applications.

This IC provides an output power of 6 watts per channel
(at VCC = 20 V, f = 1 kHz, THD = 10%, RL = 8 Ω).
It is suitable for power amplifier of TV and home Stereo.

Features
• : High output power: Pout = 6 W (Typ.)
(VCC = 20 V, RL = 8 Ω, f = 1 kHz, THD = 10%)
• Built-in audio muting circuit. Weight: 4.04 g (typ.)
• NF terminal capacitor less
: Fixed gain (Gv = 34dB), needless external capacitor.
• Protectors
: Thermal shut down protection circuit, over voltage protection circuit
• Low poping noise
• High THD ratio
• High input dynamic range
• Available for using same PCB layout with 3 channel IC: TA8256BHQ
• Operating supply voltage range
: VCC (opr) = 10~30 V (Ta = 25°C)

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Block Diagram

VCC

6 9
RIPPLE FILTER

4 kΩ
INPUT1 4

30 kΩ
Amp 1 8
OUT1

350 Ω 20 kΩ RL

3 Pre-GND V18 PW-GND 10

2.1 V
20 kΩ RL

350 Ω
Amp 2 12
4 kΩ OUT2
INPUT2 2
30 kΩ

5 7
MUTE SW MUTE T.C.

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Terminal Explanation
Terminal
Symbol Function Equivalent Circuit
No.

VCC
2 IN2

4 kΩ 20 kΩ
2/4 OUT
Input

350 Ω
30 kΩ
NF へ
4 IN1
GND

3 Pre-GND GND terminal ⎯

VCC

5 MUTE SW

7
to MUTE
MUTE control terminal 10 kΩ Amplifier
5

7 MUTE T.C.

GND
10 kΩ

to POP-NOIZE
6 R/F Ripple filter
preventive circuit
6 to Bias circuit
5.1 kΩ

VCC
8 OUT1

Output 8/12
2.2 kΩ

12 OUT2
GND

9 VCC Supply voltage terminal ⎯

10 PW-GND GND terminal ⎯

1, 11: NC

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Cautions
This IC is not proof enough against a strong E-M field by CRT which may cause malfunction such as leak.
Please set the IC keeping the distance from CRT.

Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Supply voltage VCC 30 V

Output current (peak/ch) IO (peak) 2 A
Power dissipation PD (Note) 25 W
Operating temperature Topr −20~75 °C
Storage temperature Tstg −55~150 °C

Note: Derated above Ta = 25°C in the proportion of 200 mW/°C.

Electrical Characteristics
(Unless otherwise specified, VCC = 20 V, RL = 8 Ω, Rg = 620 Ω, f = 1 kHz, Ta = 25°C)
Test
Characteristic Symbol Test Condition Min. Typ. Max Unit
Circuit
Quiescent current ICCQ ⎯ Vin = 0 50 85 130 mA
Pout (1) ⎯ THD = 10% 5 6 ⎯
Output power W
Pout (2) ⎯ THD = 1% ⎯ 4.5 ⎯
THD (1) ⎯ Pout = 2 W ⎯ 0.04 0.2
Total harmonic distortion %
THD (2) ⎯ Pout = 2 W, f = 10 kHz, ⎯ 0.1 0.6
Voltage gain Gv ⎯ Vout = 0.775 Vrms 32.5 34 35.5 dB
Input resistance RIN ⎯ ⎯ ⎯ 34 ⎯ kΩ
Ripple rejection ratio R.R. ⎯ f = 100 Hz −40 −47 ⎯ dB
Rg = 10 kΩ,
Output noise voltage Vno ⎯ ⎯ 0.14 0.3 mVrms
BW = 20 Hz~20 kHz
Rg = 10 kΩ,
Cross talk C.T. ⎯ ⎯ −60 ⎯ dB
Vout = 0.775 Vrms
Vth (ON) ⎯ MUTE ON 3.1 ⎯ VCC
Mute control voltage V
Vth (OFF) ⎯ MUTE OFF 0 ⎯ 2.5
Mute attenuation level ATT ⎯ Vout = 0.775 Vrms → Mute −52 −60 ⎯ dB

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Test Circuit

VCC

1000 µF
100 µF
6 9
RIPPLE FILTER

4 kΩ
INPUT1 4 1000 µF

30 kΩ
1.0 µF Amp 1 8
OUT1

2.2 Ω
350 Ω RL

0.10 µF
20 kΩ

3 Pre-GND V18 PW-GND 10

2.1 V

0.10 µF
20 kΩ RL

2.2 Ω
350 Ω
Amp 2 12
4 kΩ OUT2
INPUT2 2 1000 µF
30 kΩ

1.0 µF

5 7
MUTE SW MUTE T.C.
10 µF

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ICCQ, Vout (DC) – VCC THD – f

200 20 10
VCC = 20 V

(%)
VIN = 0 5 Pout = 2 W
3 RL = 8 Ω
ICCQ (mA)

Output voltage Vout (DC) (V)

Total harmonic distortion THD

160 16
Vout
1

120 12 0.5
ICCQ 0.3
Quiescent current

80 8 0.1

0.05
0.03
40 4

0.01
30 100 300 1k 3k 10 k 30 k 100 k
0 0
0 4 8 12 16 20 24 28 32 36 Frequency f (Hz)

Supply voltage VCC (V)

THD – Pout THD – Pout

30 30

VCC = 20 V f = 1 kHz
RL = 8 Ω RL = 8 Ω
10 10

5 5
(%)

(%)

3 3
VCC = 12 V 20 28
Total harmonic distortion THD

Total harmonic distortion THD

1 1

0.5 0.5

0.3 0.3

f = 10 kHz
0.1 0.1

0.05 f = 1 kHz 0.05

0.03 0.03

f = 100 Hz
0.01 0.01
0.3 0.5 1 3 5 10 30 0.3 0.5 1 3 5 10 30

Output Power Pout (W) Output Power Pout (W)

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 TA8246AHQ

Pout – VCC Gv – f
20 70
f = 1 kHz
VCC = 20 V
18 RL = 8 Ω
THD = 10% 60 Vout = 0.775 Vrms
16 RL = 8 Ω
(W)

Gv (dB)
14 50
Output power Pout

12
40
10

Voltage gain
30
8

6 20

4
10
2

0 0
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 30 100 300 1k 3k 10 k 30 k 100 k

Supply voltage VCC (V) Frequency f (Hz)

R.R. – f C.T. – f
0 0
VCC = 20 V VCC = 20 V
RL = 8 Ω RL = 8 Ω
−10 R = 0 −10 V
(dB)

g out = 0.775 Vrms

Vripple = 0.775 Vrms Rg = 10 kΩ
Cross talk C.T. (dB)

−20 −20
R.R.

−30 −30
Ripple rejection ratio

−40 −40

−50 −50

−60 −60

−70 −70
30 100 300 1k 3k 10 k 30 k 100 k 30 100 300 1k 3k 10 k 30 k 100 k

Frequency f (Hz) Frequency f (Hz)

Vno – Rg R.R. – Rg
1.6 0
VCC = 20 V VCC = 20 V
RL = 8 Ω
(mVrms)

1.4 RL = 8 Ω −10 f
(dB)

BW = 20 Hz~20 kHz ripple = 100 Hz

Vripple = 0.775 Vrms
1.2
−20
R.R.
Output noise voltage Vno

1.0
−30
Ripple rejection ratio

0.8
−40
0.6

−50
0.4

0.2 −60

0 −70
30 100 300 1k 3k 10 k 30 k 100 k 30 100 300 1k 3k 10 k 30 k 100 k

Signal source resistance Rg (Ω) Signal source resistance Rg (Ω)

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C.T. – Rg PD – Pout
0 18
VCC = 20 V Dual
f = 1 kHz 16 f = 1 kHz
−10 R = 8 Ω RL = 8 Ω
L

(W)
Vout = 0.775 Vrms 14
Cross talk C.T. (dB)

−20

Power dissipation PD
12 V
CC = 28 V THD = 1%
−30 10 10%

−40 8
20 V
6
−50
4
−60 12 V
2

−70 0
30 100 300 1k 3k 10 k 30 k 100 k 0 2 4 6 8 10 12 14 16

Signal source resistance Rg (Ω) Output power Pout (W)

PD MAX – VCC ICCQ – Ta

20 180
(W)

f = 1 kHz VCC = 20 V
18 160
RL = 8 Ω VIN = 0
ICCQ (mA)
Maximum power dissipation PD MAX

16
140
14
120
12
100
Quiescent current

10
80
8
60
6
40
4

2 20

0 0
8 12 16 20 24 28 32 −40 −20 0 20 40 60 80 100

Supply voltage VCC (V) Ambient temperature Ta (°C)

Vno – Ta THD – Ta
0.8 10
VCC = 20 V VCC = 20 V
5 RL = 8 Ω
(mVrms)

(%)

0.7 Rg = 10 kΩ
3 f = 1 kHz
Pout = 2 W
Total harmonic distortion THD

0.6
Dual
1
Output noise voltage Vno

0.5
0.5
0.4 0.3

0.3
0.1

0.2 0.05
0.03
0.1

0 0.01
−40 −20 0 20 40 60 80 100 −40 −20 0 20 40 60 80 100

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

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PD MAX – Ta
30
(W)

1: Infinite heat sink

1 2: 4.1°C/W heat sink
Allowable power dissipation PD MAX

25
3: 9.5°C/W heat sink

20
2

15

3
10

0
0 25 50 75 100 125 150 175 200

Ambient temperature Ta (°C)

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Package Dimensions

Weight: 4.04 g (typ.)

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About solderability, following conditions were confirmed

• Solderability

(1) Use of Sn-63Pb solder Bath

· solder bath temperature = 230°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux

(2) Use of Sn-3.0Ag-0.5Cu solder Bath

· solder bath temperature = 245°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux

RESTRICTIONS ON PRODUCT USE 030619EBF

• The information contained herein is subject to change without notice.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

• The products described in this document are subject to the foreign exchange and foreign trade laws.

• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

• This product generates heat during normal operation. However, substandard performance or malfunction may
cause the product and its peripherals to reach abnormally high temperatures.
The product is often the final stage (the external output stage) of a circuit. Substandard performance or
malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the
product.

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