2SC5706 D

NPN Silicon
Elektronische Bauelemente General Purpose Transistor

RoHS Compliant Product

TO-252
6. 50Ć0. 15
FEATURES 5. 30Ć0. 10
2. 30Ć0. 10

C
•Large current capacitance 0. 51Ć0. 05

•Low collector-to-emitter saturation voltage 5

•High-speed switching

5. 50Ć0. 10
0. 51Ć0. 10 1. 20

9. 70Ć0. 20

0. 75Ć0. 10
•High allowable power dissipation 0Ć0. 10

5 5

MARKING : 5706 0. 80Ć0. 10

0. 6
(With Date Code)

1. 60Ć0. 15

2. 70Ć0. 20
0. 60Ć 0. 10
2. 30Ć0. 10 0 Ć9
2. 30Ć0. 10
MAXIMUM RATINGS* TA=25ćunless otherwise noted B C E 0. 51

Parameter Symbol Ratings Unit

Collector-Base Voltage VCBO 80 V

Collector-Emitter Voltage VCES 80 V

Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 6 V
Collector Current I CBO 5 A

Collector Current (Pulse) I CP 7.5 A

Base Current IB 1.2 A
Junction Temperature Tj +150 °C
Storage Temperature TSTG -55~+150 °C
PD 0.8 W
Total Power Dissipation
PD(TC=25°C) 15 W

ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified)

O

Parameter Symbol Min Typ. Max Unit. Test Conditions

Collector-Base Breakdown Voltage BVCBO 80 - - V I C=10µA, I E=0

Collector-Emitter Breakdown Voltage BVCES 80 - - V I C=100µA, RBE=0

Collector-Emitter Breakdown Voltage BVCEO 50 - - V I C=1mA, RBE=∞

Emitter-Base Breakdown Voltage BVEBO 6 - - V I E=10µA, I C=0

Collector-Base Cutoff Current I CBO - - 1 µA VCB=40V, I E=0

Emitter-Base Cutoff Current I EBO - - 1 µA VEB=4V, I C=0

Collector Saturation Voltage 1 *VCE(sat)1 - - 135 mV I C=1A, I B=50mA
Collector Saturation Voltage 2 *VCE(sat)2 - - 240 mV I C=2A, I B=100mA

Base Saturation Voltage *V BE(sat) - - 1.2 V I C=2A, I B=100mA

DC Current Gain *hFE 200 - 560 VCE=2V, I C=500mA

Gain-Bandwidth Product fT - 400 - MHz VCE=10V, IC=500mA

Output Capacitance Cob - 15 - pF VCB=10V, f=1MHz

Turn-On Time ton - 35 - ns See specified test circuit.

Storage Time tstg - 300 - ns See specified test circuit.

Fall Time tf - 20 - ns See specified test circuit.

http://www.SeCoSGmbH.com Any changing of specification will not be informed individual

01-Jun-2002 Rev. A Page 1 of 3

 2SC5706D
NPN Silicon
Elektronische Bauelemente General Purpose Transistor

SwitchingTimeTest Circuit

Characteristics Curve

http://www.SeCoSGmbH.com Any changing of specification will not be informed individual

01-Jun-2002 Rev. A Page 2 of 3
 2SC5706D
NPN Silicon
Elektronische Bauelemente General Purpose Transistor

http://www.SeCoSGmbH.com Any changing of specification will not be informed individual

01-Jun-2002 Rev. A Page 3 of 3