AP4511GH

RoHS-compliant Product
Advanced Power N AND P-CHANNEL ENHANCEMENT

Electronics Corp. MODE POWER MOSFET

▼ Simple Drive Requirement D1/D2 N-CH BVDSS 35V

▼ Good Thermal Performance RDS(ON) 30mΩ
▼ Fast Switching Performance ID 15A
S1
G1
S2 P-CH BVDSS -35V
G2
RDS(ON) 48mΩ
TO-252-4L
Description ID -12A

Advanced Power MOSFETs from APEC provide the D1 D2

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G1 G2

S1 S2

Absolute Maximum Ratings

Symbol Parameter Rating Units
N-channel P-channel
VDS Drain-Source Voltage 35 -35 V
VGS Gate-Source Voltage +20 +20 V
3
ID@TC=25℃ Continuous Drain Current 15 -12 A
3
ID@TC=100℃ Continuous Drain Current 9 -7 A
1
IDM Pulsed Drain Current 50 -50 A
PD@TC=25℃ Total Power Dissipation 10.4 W
Linear Derating Factor 0.083 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
3
Rthj-c Maximum Thermal Resistance, Junction-case 12 ℃/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W

Data and specifications subject to change without notice 1

200809174
AP4511GH

o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 35 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A - - 30 mΩ
VGS=4.5V, ID=6A - - 40 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=8A - 13 - S
IDSS Drain-Source Leakage Current VDS=35V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (T j=150 C) VDS=28V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+20V - - +100 nA
2
Qg Total Gate Charge ID=8A - 11 18 nC
Qgs Gate-Source Charge VDS=28V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC
2
td(on) Turn-on Delay Time VDS=18V - 12 - ns
tr Rise Time ID=1A - 7 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 22 - ns
tf Fall Time RD=18Ω - 6 - ns
Ciss Input Capacitance VGS=0V - 830 1330 pF
Coss Output Capacitance VDS=25V - 150 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF
Rg Gate Resistance f=1.0MHz - 1.1 1.7 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=8A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=8A, VGS=0V - 18 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC

2
 AP4511GH

P-CH Electrical Characteristics@T j=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -35 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA - -0.03 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-6A - - 48 mΩ
VGS=-4.5V, ID=-4A - - 70 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-6A - 10 - S
IDSS Drain-Source Leakage Current VDS=-35V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (Tj=150 C) VDS=-28V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=+20V - - +100 nA
2
Qg Total Gate Charge ID=-6A - 10 19 nC
Qgs Gate-Source Charge VDS=-28V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 6 - nC
2
td(on) Turn-on Delay Time VDS=-18V - 10 - ns
tr Rise Time ID=-1A - 6 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 26 - ns
tf Fall Time RD=18Ω - 7 - ns
Ciss Input Capacitance VGS=0V - 690 1100 pF
Coss Output Capacitance VDS=-25V - 165 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF
Rg Gate Resistance f=1.0MHz - 5 7.5 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-6A, VGS=0V - - -1.2 V
2
trr Reverse Recovery Time IS=-6A, VGS=0V - 20 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 12 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.N-CH , P-CH are same .

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

3
AP4511GH
N-Channel
50 50

T C = 25 o C 10V
10V T C = 150 o C 7.0V
40
7.0V 40
5.0V
ID , Drain Current (A)

ID , Drain Current (A)

30 30 5.0V
4.5V

20 20 4.5V

10 V G =3.0V 10
V G =3.0V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

45 1.6

ID=8A
ID=6A V G =10V
40 1.4
T C =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ )

35 1.2

30 1.0

25 0.8

20 0.6
2 4 6 8 10 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
6 1.4
Normalized VGS(th) (V)

4 1.1
IS(A)

o o
T j =150 C T j =25 C

2 0.8

0 0.5
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

4
 AP4511GH
N-Channel
f=1.0MHz
14 1000

C iss
12 ID=8A
VGS , Gate to Source Voltage (V)

V DS = 28V
10

C oss

C (pF)
8

100
C rss
6

0 10
0 5 10 15 20 25 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (R thjc)

Duty factor=0.5

100us

10 0.2
ID (A)

0.1

0.1

0.05
1ms
PDM
1 0.02
t
T
o 0.01
T C =25 C 10ms
Single Pulse Duty factor = t/T
Single Pulse 100ms Peak Tj = PDM x Rthjc + TC

DC
0.1 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1

V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

40

V DS =5V VG

30

QG
ID , Drain Current (A)

o
T j =25 C T j =150 o C
4.5V
20
QGS QGD

10

Charge Q
0
0 2 4 6 8

V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

5
AP4511GH
P-Channel
50 50

-10V
o
T C = 25 o C -10V T C = 150 C -7.0V
40 -7.0V 40

-ID , Drain Current (A)

-ID , Drain Current (A)

-5.0V
30 30 -5.0V
-4.5V
-4.5V
20 20

V G = - 3.0V
10 10 V G = - 3.0V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

90 1.6

I D = -6 A
ID=-4A V G = - 10V
1.4

T C =25 o C
Normalized R DS(ON)
RDS(ON) (m Ω)

70

1.2

1.0

50

0.8

30 0.6
2 4 6 8 10 -50 0 50 100 150

-V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
6 1.6

5
Normalized -VGS(th) (V)

4 1.2

T j =150 o C T j =25 o C
-IS(A)

2 0.8

0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

6
 AP4511GH
P-Channel
f=1.0MHz
16 1000

I D = -6 A C iss
-VGS , Gate to Source Voltage (V)

V DS = - 28V
12

C (pF)
8

4
C oss

C rss

0 100
0 5 10 15 20 25 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (Rthjc)

100us

10 0.2
-ID (A)

0.1

0.1

0.05
1ms
PDM
0.02
1 t

0.01
T
10ms
T C =25 o C Duty factor = t/T
100ms Single Pulse Peak Tj = PDM x Rthjc + TC
Single Pulse DC
0.1 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

30

V DS =-5V VG
-ID , Drain Current (A)

T j =25 o C T j =150 o C QG
20

-4.5V
QGS QGD

10

Charge Q
0
0 2 4 6 8

-V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

7
 ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252(4L)

A Millimeters
SYMBOLS
MIN NOM MAX
B A 6.40 6.6 6.80
B 5.2 5.35 5.50
C 9.40 9.80 10.20
D 2.40 2.70 3.00
P 1.27 REF.
S 0.50 0.65 0.80
E3 C E3 3.50 4.00 4.50
M R 0.80 1.00 1.20
G 0.40 0.50 0.60
H 2.20 2.30 2.40
J 0.45 0.50 0.55
R K 0.00 0.075 0.15
L 0.90 1.20 1.50
D
M 5.40 5.60 5.80

S G 1.All Dimensions Are in Millimeters.

P
2.Dimension Does Not Include Mold Protrusions.

H
K

J L

Part Marking Information & Packing : TO-252(4L)

Part Number
Package Code
meet Rohs requirement
4511GH
LOGO
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence