Mixed Signal & RF

Technology
Mixed Signal/RF Technology

Overview
TSMC provides the most robust logic-compatible mixed-signal/RF technology portfolio and has shipped large volumes of
mixed-signal/RF wafers serving a myriad of applications for hundreds of communication, computer, and consumer products.

CMOS processes technologies run from 0.50-micron to 40nm standard CMOS for high-precision ADC chips and complex
single cellular System-on-Chip (SoC) devices. More and more RF products are now designed for CMOS technology since
CMOS switching speed climbs higher with each progressively smaller geometry.

Accurate SPICE models reduce design barriers and achieve first-time silicon success. TSMC's process design kits (PDKs)
include flexible and complete pcells, accurate modeling, and a comprehensive set of technology files to simplify the design
process.

SiGe BiCMOS CMOS

Core Device

I/O Device

High R Resistor

MiM

MoM

UTM

HVMOS

Mismatch Report

Analog Fitting Model

(stat Model, noise corner)
RF Model

PDK

0.35μm 0.18μm Ś0.5μm 0.35μm 0.25μm 0.18μm 0.13μm 90nm 65nm 40nm 28nm

Available In Planning

Mixed-Signal/RF Technology
TSMC's mixed-signal/RF technology provides high performance and high precision analog device functions that are coupled
with logic density, speed, and power to serve a broad range of advanced technology platform applications. Our technology
platforms feature precision, process stability, the largest available manufacturing capacity, and time-to-volume foundry
services that are the hallmarks of TSMC's mixed-signal/RF processes.

TSMC's cost-effective CMOS technology generates consistently high manufacturing yields, high performance analog devices,
robust passive components, and reliability that are key to sensitive mixed-signal applications.

Designers can add precision capacitors, precision high poly resistors, thick-metal inductors, high quality varactors and diodes
that enhance phase-locked loops, clocks, and other components for advanced consumer and communication products.
TSMC provides complete characterization reports for design reference. SPICE models and TSMC's PDKs provide the flexibility
to design mixed-signal and wireless-related circuits that shorten design time, enhance product performance, and reduce
time-to-market.
TSMC's mixed-signal/RF platform provides the necessary flexibility to meet cost-sensitive and high-precision product
requirements. Cost sensitive products can adopt fully logic-compatible devices without increasing mask count. High
precision product requirements are met through special precision devices as cost-effective add-ons. TSMC's complete
matching characterization reports cover both active and passive devices.

RF applications can take advantage of a thick copper top metal layer for a high-Q inductor. TSMC's optimal device layout and
complete characterization information are the foundation of the company's position as the foundry of choice for
communication applications.

Passive Devices Transistors

Cost Effective High Precision
ĸCapacitors ĸUltra Thick Metal Inductor ĸCMOS
ĸLogic Compatible Metal Inductor ĸVaractors ĸBipolar
ĸResistors
ĸHVMOS
Communication
ĸDiodes Cellular phone
WiMAX
WLAN
Bluetooth
Proven Logic Platform

SIPCE Models Process Design Kit (PDK)

ĸRFCMOS models ĸStatistical models ĸModels ĸStandard I/Os Consumer
ĸFlicker noise models ĸModel Scalability ĸP-cells ĸLC Finder DTV
ĸThermal noise models ĸEM Simulator ĸCustomized devices DVD
ĸMismatch models ĸStandard Cells STB

Accurate SPICE Modeling

TSMC SPICE models promote first-time silicon success to shorten time-to-market. The advanced mixed-signal model is
synchronized with logic technology. TSMC focuses on analog parameter fitting quality; accuracy is bounded by model
equation only. The temperature coefficient, voltage coefficient, mismatch, and noise statistics are monitored to confirm that
the model accuracy is in acceptable ranges.
Logic Models Mixed-Signal Models in Sub-circuit RF

Technolog Device Types Fixed Corner Flicker Noise Mismatch Statistical Flicker Noise Thermal Noise
Model Model Model Model Corner Corner RF

n/p mos Core_io

n mos Native core_io
LO
Logic Gates
SRAM Bit Cell
n mos Varactor Core_io
Junction Varactors
RTMOM
P+Poly Resistor w/o Silicide
P+Poly Resistor w/i Silicide
N-well Resistor Under OD and/or STI
Other Resistors
Diodes
BJT (PNP & NPN)
MS MIM
RF UTM Inductor
Available Not Available
Mixed Signal/RF Technology

Process Design Kits

TSMC's process design kits (PDKs) are the cornerstone for all mixed-signal/RF designs. We provide the most comprehensive
portfolio of enhanced silicon devices to address all mixed-signal/RF design needs. TSMC's PDKs are optimized with layout
(pcell) for manufacturing, simulated with accurate SPICE models, checked with thorough technology files, and re-simulated
with accurate layout parasitic extraction models. In addition, TSMC partners with industry-leading EDA suppliers to deliver a
robust mixed-signal/RF portfolio.

Cost Effective Time Domain Simulation Layout Edit Design Verification Parasitic Extraction
ĸ Cadence Composer ĸ Cadence/Spectre ĸ Parameterized cell ĸ DRC/LVS ĸ LPE

ĸ Synopsys/Hspice ĸ Virtuoso - XL/VXL Layout ĸ Cadence/Assura ĸ Cadence/Assura RCX

ĸ Mentor/Eldo Editor ĸ Mentor/Calibre ĸ Mentor/Calibre XRC

ADE

Frequency Domain Simulation

ĸ Agilent/ADS (Harmonic Balance)
GDS II

Silicon Germanium BiCMOS Technology

TSMC's Silicon Germanium BiCMOS technology delivers higher performance, faster time-to-market, lower power
consumption, and better manufacturing reliability than Gallium Arsenide or other similar processes. TSMC's Silicon
Germanium technology features:

ĸCMOS logic compatibility

ĸComprehensive device offerings and design support including a complete process design kit
ĸMulti-generation process geometries, including 0.35-micron and 0.18-micron

Combining the integration and cost benefits of silicon with the speed of more esoteric and expensive technologies makes
Silicon Germanium an ideal process for wireless and wired communication applications. Products manufactured on TSMC
Silicon Germanium processes demonstrate dramatically improved functionality at a lower cost.

TSMC is the foundry leader because we produce more mixed-signal/RF wafers than anyone else and we possess a
comprehensive mixed-signal/RF portfolio of processes and services. From our reliable and cost-effective products to our
cutting edge advanced technologies.
 0.18SiGe 0.18SiGe_PA 0.35SiGe

Core 1.8 1.8 3.3

CMOS FET
IO 3.3 3.3 3.3
HS 120 62
Ft (GHz) ST 65 55 40
HV 35 40 25
HS 120 70
Fmax (GHz) ST 90 80 60
HV 60 60 40
HS 2.3 2.5
BJT NPN BVceo ST 3.4 3.4 3.8
HV 4.8 6.5 6
HS 280 155
hFE ST 280 280 190
HV 280 280 190
HS 300 300
VA ST 300 300 400
HV 300 300 300
Ft (GHz) ST 8 8
BVceo ST 6 6
BJT PNP
hFE ST 35 35
VA ST 100 100

Collaborate, innovate and grow with TSMC

The trusted technology and capacity provider
 TSMC Headquaters
8, Li-Hsin Rd. 6 Hsinchu Science Park, Hsinchu, Taiwan 300-78
Tel: 886-3-563-6688, Fax: 886-3-563-7000

TSMC North America

2585 Junction Avenue, San Jose, CA 95134, U.S.A.
Tel: 1-408-382-8000, Fax: 1-408-382-8008

TSMC Europe B.V.

World Trade Center (H7), Zuidplein 60 1077 XV, Amsterdam, The Netherlands
Tel: 31-20-305-9900, Fax: 31-20-305-9911

TSMC Japan Limited

21F, Queen’s Tower C, 2-3-5, Minato Mirai, Nishi-Ku, Yokohama, Kanagawa, 220-6221, Japan
Tel: 81-45-682-0670, Fax: 81-45-682-0673

TSMC (China) Company Limited

4000, Wen Xiang Road, Songjiang, Shanghai, China, Postcode: 201616
Tel: 86-21-5776-8000, Fax: 86-21-5776-2525

TSMC Korea Limited

15F, AnnJay Tower, 718-2, Yeoksam-dong, Gangnam-gu, Seoul 135-080, Korea
Tel: 82-2-2051-1688, Fax: 82-2-2051-1669

TSMC India
1st Floor, Pine Valley, Embassy Golf-Links Business Park, Bangalore–560071, India.
Tel: +91-80-4176-8615, Fax: +91-80-4176-4568

Information in this document is subject to change without notice. Copyright 2011 Taiwan Semiconductor Manufacturing Company Ltd. All rights reserved. All trademarks are the property of their respective owners.
2010-6/04.11