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Sipmos Power Transistor: Buz 73 L
Sipmos Power Transistor: Buz 73 L
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TC = 28 °C 7
Pulsed drain current IDpuls
TC = 25 °C 28
Avalanche current,limited by Tjmax IAR 7
Avalanche energy,periodic limited by Tjmax EAR 6.5 mJ
Avalanche energy, single pulse EAS
ID = 7 A, VDD = 50 V, RGS = 25 Ω
L = 3.67 mH, Tj = 25 °C 120
Gate source voltage VGS ± 14 V
Gate-source peak voltage,aperiodic Vgs ± 20
Power dissipation Ptot W
TC = 25 °C 40
Operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC ≤ 3.1 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C 200 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = 1 mA 1.2 1.6 2
Zero gate voltage drain current IDSS µA
VDS = 200 V, VGS = 0 V, Tj = 25 °C - 0.1 1
VDS = 200 V, VGS = 0 V, Tj = 125 °C - 10 100
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 10 100
Drain-Source on-resistance RDS(on) Ω
VGS = 5 V, ID = 3.5 A - 0.3 0.4
Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = 3.5 A 5 6.5 -
Input capacitance Ciss pF
VGS = 0 V, VDS = 25 V, f = 1 MHz - 630 840
Output capacitance Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 120 200
Reverse transfer capacitance Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 60 90
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50 Ω - 15 20
Rise time tr
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50 Ω - 60 90
Turn-off delay time td(off)
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50 Ω - 100 130
Fall time tf
VDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50 Ω - 40 50
Reverse Diode
Inverse diode continuous forward current IS A
TC = 25 °C - - 7
Inverse diode direct current,pulsed ISM
TC = 25 °C - - 28
Inverse diode forward voltage VSD V
VGS = 0 V, IF = 14 A - 1.1 1.7
Reverse recovery time trr ns
VR = 100 V, IF=lS, diF/dt = 100 A/µs - 140 -
Reverse recovery charge Qrr µC
VR = 100 V, IF=lS, diF/dt = 100 A/µs - 0.7 -
45 7.5
A
W
6.5
Ptot 35 ID 6.0
5.5
30 5.0
4.5
25
4.0
20 3.5
3.0
15 2.5
2.0
10
1.5
1.0
5
0.5
0 0.0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC
10 2 10 1
K/W
t = 15.0µs
A p
ID ZthJC
10 0
D
/I
DS
100 µs
=V
10 1
n)
(o
DS
R
10 -1
1 ms
D = 0.50
0.20
10 0 0.10
10 ms 0.05
10 -2
0.02
0.01
single pulse
DC
10 -1 10 -3
0 1 2 -7 -6 -5 -4 -3 -2 -1 0
10 10 10 V 10 10 10 10 10 10 10 s 10
VDS tp
16 1.3
Ptot = 40W
li
kj h
gf e
Ω a b c
A
VGS [V] 1.1
ID a 2.0 RDS (on)
1.0
12 b 2.5
d
c 3.0 0.9
d 3.5
10 0.8
e 4.0
f 4.5 0.7
8 g 5.0
h 5.5 0.6
c i 6.0
6 0.5
j 7.0
k 8.0 0.4
d e
4 l 10.0 hjf kig
0.3
b 0.2
2 VGS [V] =
a b c d e f g h i j k
0.1 2.0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0
0 a 0.0
0 2 4 6 8 V 12 0 2 4 6 8 10 A 13
VDS ID
18 12
S
A
10
ID 14 gfs
9
12 8
7
10
6
8
5
6 4
3
4
2
2
1
0 0
0 1 2 3 4 5 6 7 8 V 10 0 2 4 6 8 10 12 A 15
VGS ID
1.3 4.6
Ω V
1.1 4.0
RDS (on) VGS(th)
1.0 3.6
0.9 3.2
0.8
2.8
0.7
2.4
0.6 98%
98% 2.0
0.5 typ
typ 1.6
0.4 2%
1.2
0.3
0.2 0.8
0.1 0.4
0.0 0.0
-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160
Tj Tj
10 4 10 2
pF A
C IF
10 3 10 1
Ciss
10 2 Coss 10 0
Tj = 25 °C typ
Crss Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 1 10 -1
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD
130 16
mJ
V
110
EAS VGS
100
12
90
70
8
60
50 6
40
4
30
20
2
10
0 0
20 40 60 80 100 120 °C 160 0 10 20 30 40 50 60 70 80 nC 100
Tj Q Gate
240
230
V(BR)DSS
225
220
215
210
205
200
195
190
185
180
-60 -20 20 60 100 °C 160
Tj
Package Outlines
TO-220 AB
Dimension in mm
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