Professional Documents
Culture Documents
Irf540, Sihf540: Vishay Siliconix
Irf540, Sihf540: Vishay Siliconix
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 100
• Repetitive Avalanche Rated Available
RDS(on) () VGS = 10 V 0.077
• 175 °C Operating Temperature RoHS*
Qg (Max.) (nC) 72 COMPLIANT
• Fast Switching
Qgs (nC) 11
Qgd (nC) 32
• Ease of Paralleling
Configuration Single • Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
D
TO-220AB DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G
cost-effectiveness.
The TO-220AB package is universally preferred for all
S commercial-industrial applications at power dissipation
D
G S levels to approximately 50 W. The low thermal resistance
N-Channel MOSFET
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
IRF540PbF
Lead (Pb)-free
SiHF540-E3
IRF540
SnPb
SiHF540
VGS 102
102 Top 15 V
10 V 25 °C
8.0 V
ID, Drain Current (A)
91021_01 VDS, Drain-to-Source Voltage (V) 91021_03 VGS, Gate-to-Source Voltage (V)
VGS 3.0
102 ID = 17 A
Top 15 V VGS = 10 V
10 V 2.5
8.0 V
ID, Drain Current (A)
7.0 V
6.0 V 2.0
(Normalized)
5.5 V
5.0 V
101 Bottom 4.5 V 4.5 V 1.5
1.0
0.5
20 µs Pulse Width
TC = 175 °C
0.0
10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160180
91021_02 VDS, Drain-to-Source Voltage (V) 91021_04 TJ, Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature
3000
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted 150 °C
101 25 °C
Ciss
1800
1200
Coss 100
600
Crss
VGS = 0 V
0 10-1
100 101 0.4 0.8 1.2 1.6
91021_05 VDS, Drain-to-Source Voltage (V) 91021_07 VSD, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 103
ID = 17 A Operation in this area limited
VGS, Gate-to-Source Voltage (V)
5 by RDS(on)
VDS = 80 V
16 2
VDS = 50 V
ID, Drain Current (A)
102 10 µs
VDS = 20 V
12 5
100 µs
2
8 1 ms
10
4 5 10 ms
TC = 25 °C
For test circuit
2 TJ = 175 °C
see figure 13 Single Pulse
0 1
2 5 2 5 2 5 2 5 2 5
0 10 20 30 40 50 60 70 0.1 1 10 102 103 104
91021_06 QG, Total Gate Charge (nC) 91021_08 VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
RD
VDS
VGS
D.U.T.
30 RG
+
- VDD
25
10 V
ID, Drain Current (A)
20 Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
15
Fig. 10a - Switching Time Test Circuit
10
VDS
5
90 %
0
25 50 75 100 125 150 175
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms
10
Thermal Response (ZthJC)
1
0 − 0.5
PDM
0.2
0.1 0.1 t1
0.05 t2
0.02 Single Pulse Notes:
0.01 (Thermal Response) 1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10
L VDS
VDS
Vary tp to obtain tp
required IAS VDD
RG D.U.T +
V DD
- VDS
IAS
10 V
tp 0.01 Ω
IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
600
ID
Top
EAS, Single Pulse Energy (mJ)
11 A
500 20 A
Bottom 28 A
400
300
200
100
VDD = 25 V
0
25 50 75 100 125 150 175
Current regulator
Same type as D.U.T.
QG 50 kΩ
10 V 12 V 0.2 µF
0.3 µF
QGS QGD +
VDS
D.U.T. -
VG
VGS
3 mA
Charge
IG ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
- +
-
Rg • dV/dt controlled by Rg +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor “D”
• D.U.T. - device under test
VGS = 10 Va
Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 % ISD
Note
a. VGS = 5 V for logic level devices
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91021.
DWG: 5471
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
• Xi’an and Mingxin actual photo
C
b
e
J(1)
e(1)
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.