PD - 97404

IRGP4063PbF
IRGP4063-EPbF
INSULATED GATE BIPOLAR TRANSISTOR

Features
• Low VCE (ON) Trench IGBT Technology C
• Low switching losses
VCES = 600V
• Maximum Junction temperature 175 °C
IC = 48A, TC = 100°C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for ILM 
G tSC ≥ 5μs, TJ(max) = 175°C
• Positive VCE (ON) Temperature co-efficient
• Tight parameter distribution
E VCE(on) typ. = 1.65V
• Lead Free Package n-channel

Benefits C C
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability E E
• Excellent Current sharing in parallel operation GC GC
• Low EMI TO-247AC TO-247AD
IRGP4063PbF IRGP4063-EPbF

G C E
Gate Collector Emitter

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 96 h
IC @ TC = 100°C Continuous Collector Current 48
ICM Pulse Collector Current, VGE = 15V 144 A
ILM Clamped Inductive Load Current, VGE = 20V c 192 A
VGE Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
PD @ TC = 25°C Maximum Power Dissipation 330 W
PD @ TC = 100°C Maximum Power Dissipation 170
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.45 °C/W
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40

1 www.irf.com
06/30/09
IRGP4063PbF/IRGP4063-EPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 150μA f CT6
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.30 — V/°C VGE = 0V, IC = 1mA (25°C-175°C) CT6

— 1.65 2.14 IC = 48A, VGE = 15V, TJ = 25°C 5,6,7

VCE(on) Collector-to-Emitter Saturation Voltage — 2.0 — V IC = 48A, VGE = 15V, TJ = 150°C 8,9,10

— 2.05 — IC = 48A, VGE = 15V, TJ = 175°C

VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 1.4mA 8,9
ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -21 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) 10,11

gfe Forward Transconductance — 32 — S VCE = 50V, IC = 48A, PW = 80μs

ICES Collector-to-Emitter Leakage Current — 1.0 150 μA VGE = 0V, VCE = 600V
— 450 1000 VGE = 0V, VCE = 600V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig
Qg Total Gate Charge (turn-on) — 95 140 IC = 48A 18

Qge Gate-to-Emitter Charge (turn-on) — 28 42 nC VGE = 15V CT1

Qgc Gate-to-Collector Charge (turn-on) — 35 53 VCC = 400V

Eon Turn-On Switching Loss g — 625 1141 IC = 48A, VCC = 400V, VGE = 15V CT4

Eoff Turn-Off Switching Loss — 1275 1481 μJ RG=10Ω, L= 200μH, LS=150nH, TJ= 25°C
Etotal Total Switching Loss — 1900 2622 Energy losses include tail & diode reverse recovery
td(on) Turn-On delay time — 60 78 IC = 48A, VCC = 400V, VGE = 15V CT4

tr Rise time — 40 56 ns RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C

td(off) Turn-Off delay time — 145 176
tf Fall time — 35 46
Eon Turn-On Switching Loss g — 1625 — IC = 48A, VCC = 400V, VGE=15V 12, 14

Eoff Turn-Off Switching Loss — 1585 — μJ RG=10Ω, L=200μH, LS=150nH, TJ = 175°C f CT4

Etotal Total Switching Loss — 3210 — Energy losses include tail & diode reverse recovery WF1, WF2

td(on) Turn-On delay time — 55 — IC = 48A, VCC = 400V, VGE = 15V 13, 15

tr Rise time — 45 — ns RG = 10Ω, L = 200μH, LS = 150nH CT4

td(off) Turn-Off delay time — 165 — TJ = 175°C WF1

tf Fall time — 45 — WF2

Cies Input Capacitance — 3025 — pF VGE = 0V 17

Coes Output Capacitance — 245 — VCC = 30V

Cres Reverse Transfer Capacitance — 90 — f = 1.0Mhz
TJ = 175°C, IC = 192A 4

RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2
Rg = 10Ω, VGE = +15V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μs VCC = 400V, Vp =600V 16, CT3

Rg = 10Ω, VGE = +15V to 0V WF3

Notes:
 VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10Ω.
‚ This is only applied to TO-247AC package.
ƒ Pulse width limited by max. junction temperature.
„ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
… Turn-on energy is measured using the same co-pak diode as IRGP4063DPbF.
† Calculated continuous current based on maximum allowable junction temperature.
Bond wire current limit is 80A. Note that current limitations arising from heating of
the device leads may occur with some lead mounting arrangements.

2 www.irf.com
 IRGP4063PbF/IRGP4063-EPbF
100 350
90
300
80
70 250

60
200

Ptot (W)
IC (A)

50
40 150

30 100
20
50
10
0 0
0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200
T C (°C) T C (°C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature
1000 1000

100 10μsec

100μsec 100
IC (A)

IC (A)

10 1msec

DC 10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1 1
1 10 100 1000 10 100 1000
VCE (V) VCE (V)
Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V TJ = 175°C; VGE =15V

200 200

180 180

160 VGE = 18V 160

VGE = 18V
VGE = 15V
140 140 VGE = 15V
VGE = 12V
VGE = 10V VGE = 12V
120 120 VGE = 10V
VGE = 8.0V
ICE (A)
ICE (A)

100 100 VGE = 8.0V

80 80

60 60

40 40

20 20

0 0
0 2 4 6 8 10 0 2 4 6 8 10

VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs TJ = 25°C; tp = 80μs

www.irf.com 3
IRGP4063PbF/IRGP4063-EPbF
200 20
180 VGE = 18V 18
VGE = 15V
160 VGE = 12V 16
VGE = 10V
140 14
VGE = 8.0V
120 12 ICE = 24A

VCE (V)
ICE (A)

100 10 ICE = 48A

ICE = 96A
80 8
60 6
40 4
20 2
0 0
0 2 4 6 8 10 5 10 15 20
VGE (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typical VCE vs. VGE
TJ = 175°C; tp = 80μs TJ = -40°C

20 20

18 18

16 16

14 14

12 ICE = 24A 12 ICE = 24A

VCE (V)
VCE (V)

10 ICE = 48A 10 ICE = 48A

ICE = 96A ICE = 96A
8 8

6 6

4 4

2 2

0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)

Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = 25°C TJ = 175°C
200 6000

180
T J = 25°C
5000
160 T J = 175°C EOFF
140
4000
Energy (μJ)

120
ICE (A)

100 3000 EON

80
2000
60
40
1000
20
0 0
0 5 10 15 0 50 100 150
VGE (V)
IC (A)
Fig. 11 - Typ. Transfer Characteristics Fig. 12 - Typ. Energy Loss vs. IC
VCE = 50V; tp = 10μs TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V

4 www.irf.com
 IRGP4063PbF/IRGP4063-EPbF
1000 5000

4500
EOFF
4000
EON
Swiching Time (ns)

tdOFF 3500

Energy (μJ)
100 3000
tdON
2500
tF
2000
tR
1500

10 1000
0 20 40 60 80 100 0 25 50 75 100 125

IC (A) Rg (Ω)

Fig. 13 - Typ. Switching Time vs. IC Fig. 14 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
1000 18 400

tdOFF 16 350

14 300
Swiching Time (ns)

tR

Current (A)
tdON
Time (μs)

12 250
100
tF 10 200

8 150

6 100

10 4 50
0 25 50 75 100 125 8 10 12 14 16 18
RG (Ω) VGE (V)

Fig. 15 - Typ. Switching Time vs. RG Fig. 16 - VGE vs. Short Circuit Time
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V VCC = 400V; TC = 25°C

10000 16

Cies 14 V CES = 300V

VGE, Gate-to-Emitter Voltage (V)

V CES = 400V
12
1000
Capacitance (pF)

10

8
Coes
6
100
4
Cres
2

10 0
0 20 40 60 80 100 0 25 50 75 100
VCE (V) Q G, Total Gate Charge (nC)
Fig. 17 - Typ. Capacitance vs. VCE Fig. 18 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 48A; L = 600μH

www.irf.com 5
IRGP4063PbF/IRGP4063-EPbF

D = 0.50
Thermal Response ( Z thJC )

0.1 0.20
0.10
0.05

0.01 0.02 R1 R2 R3
Ri (°C/W) τi (sec)
R1 R2 R3
0.01 τJ
τJ
τC
τ
0.0872 0.000114
τ1 τ2 τ3
τ1 τ2 τ3 0.1599 0.001520
SINGLE PULSE
( THERMAL RESPONSE ) Ci= τi/Ri 0.2020 0.020330
0.001 Ci i/Ri

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

6 www.irf.com
 IRGP4063PbF/IRGP4063-EPbF

DUT VCC 80 V +
0 - DUT
1K VCC
Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

diode clamp /
DUT

L
4X

DC VCC -5V
DUT / VCC
DUT DRIVER
Rg

SCSOA

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

C force

R= VCC
ICM

100K

D1 22K
VCC C sense
DUT
DUT
Rg G force 0.0075μF

E sense

E force
Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit

www.irf.com 7
IRGP4063PbF/IRGP4063-EPbF

700 140 600 120

600 120 500 100

500 100 tr
400 80

400 80 TEST
tf 300 CURRE 60

VCE (V)
VCE (V)

90% test
300 60
90% ICE
200 40
200 40 10% test
5% VCE
100 20
100 20 5% VCE
5% ICE

0 0 0 0
EOFF Loss EON
-100 -20 -100 -20
-0.40 0.10 0.60 1.10 6.20 6.40 6.60 6.80 7.00
Time(µs) Time (µs)

Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4

600 600

500 500
ICE
VCE
400 400

300 300
VCE (V)

I CE (A)

200 200

100 100

0 0

-100 -100
-5.00 0.00 5.00 10.00
time (µS)
Fig. WF3 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3

8 www.irf.com
 IRGP4063PbF/IRGP4063-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

(;$03/( 7+,6,6$1,5)3(
:,7+$66(0%/< 3$57180%(5
/27&2'( ,17(51$7,21$/
$66(0%/('21:: 5(&7,),(5 ,5)3(

,17+($66(0%/</,1(+ /2*2 +


'$7(&2'(
$66(0%/< <($5 
1RWH3LQDVVHPEO\OLQHSRVLWLRQ
LQGLFDWHV/HDG)UHH /27&2'( :((.
/,1(+

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com 9
IRGP4063PbF/IRGP4063-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)

TO-247AD Part Marking Information

(;$03/( 7+,6,6$1,5*3%.'(
:,7+$66(0%/< 3$57180%(5
/27&2'( ,17(51$7,21$/
$66(0%/('21:: 5(&7,),(5
,17+($66(0%/</,1(+ /2*2 +

'$7(&2'(


$66(0%/< <($5 

1RWH3LQDVVHPEO\OLQHSRVLWLRQ
LQGLFDWHV/HDG)UHH /27&2'( :((.
/,1(+

TO-247AD package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/09

10 www.irf.com