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introducing

FIELD EFFECT
TRANSISTOR
 Field Effect Transistor

• FET is another semiconductor device

like BJT which can be used as switch,
amplifier, resistor etc.
• uses the voltage that is applied to
their input terminal, called the Gate
to control the current flowing
through them resulting in the
output current being proportional to
the input voltage.
• As their operation relies on an electric field (hence
the name field effect) generated by the inputGate
voltage, this then makes the Field Effect Transistor a
VOLTAGE operated device.
Field Effect Transistor

• a three terminal unipolar semiconductor

device that has very similar characteristics to
those of their Bipolar Transistor counterparts
• can be made much smaller than an equivalent
BJT transistor and along with their low power
consumption and power dissipation makes
them ideal for use in integrated circuits such
as the CMOS range of digital logic chips.
Field Effect Transistor

• a three terminal device that is constructed

with no PN-junctions within the main current
carrying path between the Drain and the
Source terminals. These terminals correspond
in function to the Collector and the Emitter
respectively of the bipolar transistor. The
current path between these two terminals is
called the channel which may be made of
either a P-type or an N-type semiconductor
material.
Two main types of FET

• Junction Field Effect Transistor or JFET

• Metal Oxide Semiconductor Field Effect
Transistor or MOSFET
– Also known as Insulated Gate FET (IGFET)
Junction FET
Junction FET
VGS = 0 V, VDS some Positive value
VGS = 0 V, VDS some Positive value

Pinch-off (VGS=0 V, VDS =VP). ID versus VDS for VGS = 0 V.

VGS = 0 V, VDS some Positive value

• Current source equivalent for VGS=0 V,

VDS > VP.
VGS < 0 V

• For the n-channel device the controlling voltage

VGS is made more and more negative from its
VGS=0V level.
• It is to establish depletion regions similar to those
obtained with VGS =0 V, but a lower level of VDS
• Eventually, when VGS = -Vp will be sufficiently
negative to establish a saturation level that is
essentially 0 mA, and for all practical purposes
the device has been turned off.
VGS < 0 V

• The level of VGS that results in ID = 0 mA is

defined by VGS = Vp, with Vp being a negative
voltage for n-channeldevices and a positive
voltage for p-channel JFETs.
n-channel JFET Characteristics
Voltage –Controlled Resistance

• The resistance level in terms of the applied

voltage:

𝒓𝒐
𝒓𝒅 =
𝑽𝑮𝑺 𝟐
(𝟏 − )
𝑽𝒑
• Where:
𝑟𝑜 - is the resistance with 𝑉𝐺𝑆 = 0V
𝑟𝑑 - is the resistance at a particular level of
𝑉𝐺𝑆 .
P-channel Devices
p-Channel JFET characteristics
JFET BIASING
 Shockley’s Equation
𝟐
𝑽𝑮𝑺
𝑰𝑫 = 𝑰𝑫𝑺𝑺 𝟏−
𝑽𝑷
Where:
ID = Drain Current
IDSS = maximum Drain current at VGS = 0
VP = pinch-off voltage
Fixed Bias
Self Bias
Voltage Divider
Example
Example
MOSFET
MOSFET
MOSFET

n-Channel depletion-type MOSFET with VGS 0 V and an

applied voltage VDDs
MOSFET

Drain and transfer characteristics for an n-channel

depletion-type MOSFET.
MOSFET
MOSFET
MOSFET (Enhancement Type)
MOSFET (Enhancement Type)
MOSFET (Enhancement Type)
MOSFET (Enhancement Type)
MOSFET (Enhancement Type)
MOSFET (Enhancement Type)
E-MOSFET
E-MOSFET

𝟐
𝑰𝑫 = 𝒌 𝑽𝑮𝑺 − 𝑽𝑮𝑺 𝑻𝑯

k = 0.3 mA/V2 if not given

END
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