SOT23 P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET BS250F

ISSUE 3 - JANUARY 1996

S
D

G
PARTMARKING DETAIL – MX

SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS -45 V
Continuous Drain Current at Tamb=25°C ID -90 mA
Pulsed Drain Current IDM -1.6 A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Drain-Source BVDSS -45 -70 V ID=-100µ A, VGS=0V

Breakdown Voltage
Gate-Source Threshold VGS(th) -1 -3.5 V ID =-1mA, VDS= VGS
Voltage
Gate-Body Leakage IGSS -20 nA VGS=-15V, VDS=0V
Zero Gate Voltage Drain IDSS -0.5. µ A VDS=-25V, VGS=0V
Current
Static Drain-Source On-State RDS(on) 9 14 Ω VGS=-10V,ID=-200mA
Resistance (1)
Forward Transconductance gfs 90 mS VDS=-10V,ID=-200mA
(1)(2)
Input Capacitance (2) Ciss 25 pF VDS=-10V, VGS=0V,
f=1MHz
Turn-On Delay Time (2)(3) td(on) 10 ns
Rise Time (2)(3) tr 10 ns VDD ≈ -25V, ID=-200mA
Turn-Off Delay Time (2)(3) td(off) 10 ns
Fall Time (2)(3) tf 10 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device

3 - 55
 BS250F BS250F

TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS

-1.2 120 120
VGS=-20V VGS=
-1.0
-1.0 -16V
-16V 100 100
-14V

gfs-Transconductance (mS)

gfs-Transconductance (mS)
ID - Drain Current (Amps)

ID - Drain Current (Amps)

-14V -0.8
-0.8 -12V
-12V 80 80
-0.6 Note:VDS=-10V Note:VDS=-10V
-10V -10V
-0.6
-9V 60 60
-9V
-8V
-0.4 -8V
-0.4
-7V -6V 40 40
-7V
-0.2 -5V -0.2 -6V
20 20
-5V
-4V -4.5V
0 0 0 0
0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10

VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)

Output Characteristics Saturation Characteristics Transconductance v drain current Transconductance v gate-source voltage
ID(On)-On-State Drain Current (Amps)

-10 -1.0 60

VGS-Gate Source Voltage (Volts)

2
VDS-Drain Source Voltage (Volts)

Note:VGS=0V 1 Note:ID=- 0.2A

50

C-Capacitance (pF)
-8 -0.8 0
f=1MHz
VDS=-10V 40
ID= -2
-6 -400mA -0.6 -4 VDS=
30 Ciss
-20V -40V -60V
-6
-4 -0.4 -8
20
Coss -10
-2 -200mA -0.2 10 -12
Crss
-14
0 -100mA 0
0 -16
0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10 0 -10 -20 -30 -40 -50 -60 -70 0 0.5 1.0 1.5

VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC)

Voltage Saturation Characteristics Transfer Characteristics Capacitance v drain-source voltage Gate charge v gate-source voltage
RDS(on)-Drain Source On Resistance (Ω)

2.6
100
Normalised RDS(on) and VGS(th)

VGS=-5V 2.4 VGS=-10V

-6V
-7V 2.2 ID=0.37A
2.0 n)
(o
DS
-10V 1.8 eR
nc
ta
10
-15V 1.6 e sis
eR
1.4 rc
-20V Sou
1.2 -
ain VGS=VDS
1.0 Dr ID=-1mA
Gate Thres
hold Voltage
0.8 VGS(TH)
1 0.6
-10 -100 -1000 -40 -20 0 20 40 60 80 100 120 140 160 180

ID-Drain Current (mA) Junction Temperature (°C)

On-resistance vs Drain Current Normalised RDS(on) and VGS(th) vs Temperature

3 - 56 3 - 57
 BS250F BS250F

TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS

-1.2 120 120
VGS=-20V VGS=
-1.0
-1.0 -16V
-16V 100 100
-14V

gfs-Transconductance (mS)

gfs-Transconductance (mS)
ID - Drain Current (Amps)

ID - Drain Current (Amps)

-14V -0.8
-0.8 -12V
-12V 80 80
-0.6 Note:VDS=-10V Note:VDS=-10V
-10V -10V
-0.6
-9V 60 60
-9V
-8V
-0.4 -8V
-0.4
-7V -6V 40 40
-7V
-0.2 -5V -0.2 -6V
20 20
-5V
-4V -4.5V
0 0 0 0
0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10

VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)

Output Characteristics Saturation Characteristics Transconductance v drain current Transconductance v gate-source voltage
ID(On)-On-State Drain Current (Amps)

-10 -1.0 60

VGS-Gate Source Voltage (Volts)

2
VDS-Drain Source Voltage (Volts)

Note:VGS=0V 1 Note:ID=- 0.2A

50

C-Capacitance (pF)
-8 -0.8 0
f=1MHz
VDS=-10V 40
ID= -2
-6 -400mA -0.6 -4 VDS=
30 Ciss
-20V -40V -60V
-6
-4 -0.4 -8
20
Coss -10
-2 -200mA -0.2 10 -12
Crss
-14
0 -100mA 0
0 -16
0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10 0 -10 -20 -30 -40 -50 -60 -70 0 0.5 1.0 1.5

VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC)

Voltage Saturation Characteristics Transfer Characteristics Capacitance v drain-source voltage Gate charge v gate-source voltage
RDS(on)-Drain Source On Resistance (Ω)

2.6
100
Normalised RDS(on) and VGS(th)

VGS=-5V 2.4 VGS=-10V

-6V
-7V 2.2 ID=0.37A
2.0 n)
(o
DS
-10V 1.8 eR
nc
ta
10
-15V 1.6 e sis
eR
1.4 rc
-20V Sou
1.2 -
ain VGS=VDS
1.0 Dr ID=-1mA
Gate Thres
hold Voltage
0.8 VGS(TH)
1 0.6
-10 -100 -1000 -40 -20 0 20 40 60 80 100 120 140 160 180

ID-Drain Current (mA) Junction Temperature (°C)

On-resistance vs Drain Current Normalised RDS(on) and VGS(th) vs Temperature

3 - 56 3 - 57
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