MDP1901 – Single N-Channel Trench MOSFET 100V

MDP1901
Single N-channel Trench MOSFET 100V, 36A, 22mΩ

General Description Features

The MDP1901 uses advanced MagnaChip’s MOSFET  VDS = 100V
Technology, which provides high performance in on-state  ID = 36A @VGS = 10V
resistance, fast switching performance and excellent  RDS(ON)
quality. MDP1901 is suitable device for DC/DC Converters < 22mΩ @VGS = 10V
and general purpose applications. < 25mΩ @VGS = 6.0V

G D
S
S

Absolute Maximum Ratings (Tc = 25oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 100 V
Gate-Source Voltage VGSS ±20 V
o
TC=25 C 36 A
Continuous Drain Current o
ID
TC=100 C 24 A
Pulsed Drain Current IDM 144 A
o
TC=25 C 34
Power Dissipation o
PD W
TC=100 C 14
Single Pulse Avalanche Energy (2) EAS 200 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics

Characteristics Symbol Rating Unit

Thermal Resistance, Junction-to-Ambient RθJA 40 o
C/W
Thermal Resistance, Junction-to-Case RθJC 2.3

August. 2010. Version 1.2 1 MagnaChip Semiconductor Ltd.

 MDP1901 – Single N-Channel Trench MOSFET 100V
Ordering Information

Part Number Temp. Range Package Packing Rohs Status

MDP1901TH -55~150oC TO-220 Tube Halogen Free

Electrical Characteristics (Tc =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 100 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 2.8 4.0
Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1
μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
VGS = 10V, ID = 35A - 17 22
o
Drain-Source ON Resistance RDS(ON) TJ=125 C - 28 33 mΩ
VGS = 6.0V, ID = 20A 19 25
Forward Transconductance gfs VDS = 5V, ID = 35A - 35 - S
Dynamic Characteristics
Total Gate Charge Qg - 75 110
VDS = 50V, ID = 20A,
Gate-Source Charge Qgs - 20 - nC
VGS = 10V
Gate-Drain Charge Qgd - 18 -
Input Capacitance Ciss - 3045 -
VDS = 30V, VGS = 0V,
Reverse Transfer Capacitance Crss - 160 - pF
f = 1.0MHz
Output Capacitance Coss - 234 -
Gate Resistance Rg VGS=0V,VDS=0V,F=1MHz - 0.81 - Ω
Turn-On Delay Time td(on) - 25 40
Rise Time tr VGS = 10V, VDS = 50V, - 12 20
ns
Turn-Off Delay Time td(off) RL = 30Ω, RG = 6Ω - 70 120
Fall Time tf - 20 35
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - 0.7 1.2 V
Body Diode Reverse Recovery Time trr - 70 100 ns
IF = 20A, dl/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr - 240 - nC

Note :

1. Surface mounted RF4 board with 2oz. Copper.

2. Starting TJ=25°C, L=1mH, IAS=20A, VDD=50V, VGS=10V

August. 2010. Version 1.2 2 MagnaChip Semiconductor Ltd.

 MDP1901 – Single N-Channel Trench MOSFET 100V
100 40

6.0V ~ 10V

80
5.0V
ID, Drain Current[A]

30

RDS(ON) [mΩ ]
60
4.5V

40 VGS=6.0V

20

20 4.0V

VGS=10V

3.5V
0 10
0 1 2 3 4 5 0 10 20 30 40
VDS, Drain-Source Voltage [V]
ID [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

2.2 70
Drain-Source On-Resistance [mΩ ]

2.0
60
1.8
RDS(ON), (Normalized)

50
1.6 VGS=10V
RDS(ON) [mΩ ]

ID=35A
1.4 40

1.2 125 ℃

30

1.0
20
0.8
25 ℃

10
0.6

0.4 0
-50 -25 0 25 50 75 100 125 150 4 6 8 10
o
TJ, Junction Temperature [ C] VGS [V]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

20 10
*Note ; VDS=5.0V

15
0.1

0.01
ID [A]

IS [A]

10
1E-3

1E-4
5 125 ℃

125 ℃
25℃
25 ℃

1E-5

0 1E-6
0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0

VGS [V] VSD [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature

August. 2010. Version 1.2 3 MagnaChip Semiconductor Ltd.

 MDP1901 – Single N-Channel Trench MOSFET 100V
10 5000
Ciss = Cgs + Cgd (Cds = shorted)
* Note ; ID = 20A Coss = Cds + Cgd
9 4500
Crss = Cgd

8 4000

7 3500 Ciss

Capacitance [pF]
6 3000
VGS [V]

5 2500

4 2000
* Notes ;
3 1500 1. VGS = 0 V
2. f = 1 MHz
2 1000
Coss
1 500
Crss
0 0
0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40
Qg [nC] VDS [V]
Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

40

2
10

100us 30

1
10 1 ms
ID [A]
ID [A]

20
Operation in This Area
is Limited by R DS(on) 10 ms

0
10 100ms 10
DC
Single Pulse
Rθ jC=2.3 /W
℃

Ta=25℃

10
-1 0
-1 0 1 2 25 50 75 100 125 150
10 10 10 10

VDS [V] TC [ ℃ ]

Fig.10 Maximum Drain Current vs. Case

Fig.9 Maximum Safe Operating Area
Temperature

1
10
Zθ ja, Normalized Thermal Response [t]

0
10
D=0.5

0.2
10
-1
0.1 ※ Notes :
0.05 Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ Ja* Rθ Ja(t) + Ta
0.02 RΘ JC=2.3 /W
℃

-2 0.01
10

single pulse

-3
10
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response Curve

August. 2010. Version 1.2 4 MagnaChip Semiconductor Ltd.

 MDP1901 – Single N-Channel Trench MOSFET 100V
Physical Dimensions

3 Leads, TO-220

Dimensions are in millimeters unless otherwise specified

August. 2010. Version 1.2 5 MagnaChip Semiconductor Ltd.

 MDP1901 – Single N-Channel Trench MOSFET 100V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

August. 2010. Version 1.2 6 MagnaChip Semiconductor Ltd.