lab Report-05

Experiment Name: TRANSISTOR Common Emitter (CE)

CHARACTERISTICS

Course Code: CSE-224

Course Title: Electronic Device and Circuits Lab

EXPERIMENT 6. TRANSISTOR Common Emitter (CE) CHARACTERISTICS AIM:

1. To draw the input and output characteristics of transistor connected in CE configuration

2. To find β of the given transistor.

APPARATUS:

● Transistor (BC 107)

● R.P.S (O-30V)
● 2NosVoltmeters (0-20V)
● 2NosAmmeters (0-200µA)(0-500mA)
● Resistors 1Kohm
● Bread board

THEORY:

A transistor is a three terminal device. The terminals are emitter, base, collector. In common
emitter configuration, input voltage is applied between base and emitter terminals and output is
taken across the collector and emitter terminals. Therefore the emitter terminal is common to both
input and output.

The input characteristics resemble that of a forward biased diode curve. This is expected since the
Base-Emitter junction of the transistor is forward biased. As compared to CB arrangement IB
increases less rapidly with VBE . Therefore input resistance of CE circuit is higher than that of CB
circuit.

The output characteristics are drawn between Ic and VCE at constant IB . the collector current varies

with VCE up to few volts only. After this the collector current becomes almost constant, and

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 independent of VCE . The value of VCE up to which the collector current changes with VCE is known

as Knee voltage. The transistor always operated in the region above Knee voltage, IC is always

constant and is approximately equal to IB .

The current amplification factor of CE configuration is given by

I
β = ICB
CIRCUIT DIAGRAM:

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 INPUT CHARACTERISTICS:

S.NO VCE = 1v VCE = 2v VCE = 4v

VBE (V) IB(µA) VBE (V) IB(µA) VBE (V) IB(µA)

1. 0.64 9.10 0.64 9.10 0.64 9.10

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 34 34 34
2. 0.68 0.68 0.68

59 59 59
3. 0.69 0.69 0.69

80 80 80
4. 0.70 0.70 0.70

110 110 110

5. 0.71 0.71 0.71

135 135 135

6. 0.72 0.72 0.72

7. 0.726 161 0.726 161 0.726 161

186 186 186

8. 0.731 0.731 0.731

212 212 212

9. 0.729 0.729 0.729

237 237 237

10 0.739 0.739 0.739

MODEL GRAPHS:

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 Chart Title
250

200

150

100

50

0
0.64 0.68 0.69 0.7 0.71 0.72 0.726 0.731 0.729 0.739

Series 1 Series 2 Series 3

I NPUT
CHARACTERSITICS:

OUTPUT CHARACTERISTICS:
IB = 20 µA
IB = 10 µA IB = 30 µA
S.NO

VCE (V) IC (mA) VCE (V) IC (mA)) VCE (V) IC (mA)

1. 0.153 0.85 0.124 0.88 0.11 0.89

2. 0.25 1.77 0.16 1.84 0.14 1.86

3. 0.934 2.07 0.2 2.81 0.16 2.84

4. 1.91 2.1 0.25 3.8 0.18 3.82
5. 2.9 2.11 0.95 4.05 0.2 4.8

6. 3.9 2.13 3.9 4.1 3.9 5.6

7. 4.9 2.22 4.9 4.12 4.9 6.1

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 8. 5.8 2.22 5.8 4.16 5.8 6.16

9. 6.8 2.11 6.8 4.2 6.8 6.21

10 7.8 2.13 7.8 4.24 7.8 5.25

MODEL GRAPHS:

Chart Title
7

0
0.15 0.25 0.93 1.91 2.9 3.9 4.9 5.8 6.8 7.8

Ib=10 Ib=20 Ib=202

PRECAUTIONS:

1. Thesupply voltage should not exceed the rating of the transistor

2. Meters should be connected properly according to their polarities

RESULT:

1. The input and output characteristics of a transistor in CE configuration

are drawn.

2. The β of a given transistor is calculated

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