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Time-Interleaved and Circuit-Shared Dual-Channel 10 B 200 MS/s 0.18 Analog-to-Digital Convertor
Time-Interleaved and Circuit-Shared Dual-Channel 10 B 200 MS/s 0.18 Analog-to-Digital Convertor
Time-Interleaved and Circuit-Shared Dual-Channel 10 B 200 MS/s 0.18 Analog-to-Digital Convertor
KIM et al.: TIME-INTERLEAVED AND CIRCUIT-SHARED DUAL-CHANNEL 10 b 200 MS/s 0.18 µm CMOS ADC 3
TABLE I
P OWER C ONSUMPTION OF THE T HREE T YPES OF SHA
Power
Structure
Consumption (mW)
SHA for a single-channel 200 MS/s ADC 17.2
Two SHAs for a dual-channel TI 100 MS/s
16.3
ADC
SHA for the proposed ADC 8.4
The shared op-amp samples and holds the inputs during the
full 100 MHz clock period alternately while the held outputs
are effective at a rate of 200 MS/s.
As a result, the required bandwidth and power dissipation
for the amplifier of the proposed ADC are approximately
a half of those for a single-channel 200 MS/s ADC or
for a dual-channel T-I 100 MS/s ADC, as summarized in
Table I.
The same double-channel and op-amp sharing techniques
are employed in the MDAC1 and MDAC2 of Fig. 2. Two input Fig. 6. MDAC1 operation at each clock phase.
channels of the MDAC1 consist of two separate capacitor-
array banks, CBANK-X and CBANK-Y, with a shared op-amp
as shown in Fig. 5. The operation of the MDAC1 is detailed with a large chip area during a nonamplifying mode. How-
in Fig. 6. ever, the proposed double-channel time-interleaving scheme
During clock phase Q1s, the CBANK-X capacitors sample is continuously processing dual-channel inputs based on a
the output of the X-channel SHA while the shared two-stage shared single amplifier, regardless of the sampling rate. As
op-amp amplifies a residue voltage, which is the difference a result, the shared single op-amp improves the power and
of the sampled input on the CBANK-Y capacitors and the area efficiency while minimizing the gain, offset, and band-
reconstructed voltage corresponding to the thermometer code width mismatches. The amplifier and capacitor mismatches
from the Y-channel FLASH1. In contrast, during Q2s, the are reduced furthermore with 3-D fully symmetrical layout
shared amplifier amplifies a residue voltage generated by the techniques without any calibration [11]. Although the shared
CBANK-X capacitors while the CBANK-Y capacitors sample op-amp scheme has various merits, a memory effect due to
the output of the Y-channel SHA. As a result, the shared op- the nonreset input nodes of the shared op-amp may degrade
amp operates for a full clock cycle. the ADC performance [12]. The proposed op-amp, as shown
The amplifiers of the SHA and MDACs in conventional in Fig. 6, employs two separate input differential pairs [13]
pipeline ADCs use only a half of a full sampling clock cycle and the input summing nodes of the deactivated differential
for amplification in a complementary fashion. If the sub-ADC pair are reset to the signal common to remove the memory
in each channel of a dual-channel T-I ADC employs a separate effect.
amplifier operating at a half sampling rate in a complementary The amplifiers in the SHA and MDACs employ a two-stage
fashion, the amplifier can dissipate undesired high power op-amp to meet the gain and bandwidth requirements for a
This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.
KIM et al.: TIME-INTERLEAVED AND CIRCUIT-SHARED DUAL-CHANNEL 10 b 200 MS/s 0.18 µm CMOS ADC 5
(b)
Fig. 13. Measured SFDR and SNDR of the ADC depending on fs. Fig. 15. FFT spectrum of the ADC measured with a fin of 80 MHz based
on (a) conventional and (b) proposed input sampling schemes.
TABLE II
P ERFORMANCE S UMMARY OF THE P ROTOTYPE ADC
Resolution 10 bits
Conversion Rate 200 MS/s
Process 0.18 µm CMOS
Input Range 1.2 Vp-p (Differential)
Max.DNL/Max.INL 0.62 LSB/0.99 LSB
SNDR 52.8 dB (@ f in = 4 MHz)
SFDR 60.4 dB (@ f in = 4 MHz)
ADC Power Consumption 54.0 mW@1.8V
Die Area 1.28 mm2 (= 1.16 mm × 1.10 mm)
Fig. 14. Measured SFDR and SNDR of the ADC depending on a fin at
200 MS/s.
of 200 MS/s is illustrated in Fig. 14. Using the conventional as shown in Fig. 15(a) and (b). The harmonic component at
input sampling scheme in Fig. 9 without a low-jitter SHA [fs/2 - fin], indicated with the dotted circle, is mostly gen-
sampling clock generator and a delay control circuit, the SFDR erated by the sampling-time mismatch of each channel [22].
and SNDR performances are degraded due to the sampling- The sampling-time mismatch effect of the conventional ADC
time mismatch. However, using the input sampling scheme is improved greatly in the proposed ADC, as observed in
with a 50% duty cycle, as proposed in Fig. 9, the SNDR Fig. 15(a) and (b).
and SFDR at the Nyquist input frequency are measured to The performance of the prototype ADC is summarized in
be 49.5 and 57.2 dB, respectively. The prototype ADC with Table II. The performance of the prototype ADC is com-
the proposed input sampling scheme shows the considerably pared with the up-to-date reported various CMOS ADCs at
improved dynamic performance compared to the ADC based a 10 b resolution and a sampling rate exceeding 200 MS/s,
on the conventional input sampling scheme. as shown in Table III. The figure of merit (FoM), defined
The FFT spectrum of the conventional input sampling as (2), of the prototype ADC is 1.11 pJ/conversion-step,
scheme is compared to the proposed input sampling scheme, including the power consumption of the on-chip reference
This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.
KIM et al.: TIME-INTERLEAVED AND CIRCUIT-SHARED DUAL-CHANNEL 10 b 200 MS/s 0.18 µm CMOS ADC 7
TABLE III
P ERFORMANCE C OMPARISON OF R ECENTLY R EPORTED 10 b CMOS ADC S AT S AMPLING R ATE H IGHER T HAN 200 MS/ S
generator. Although the prototype ADC is implemented [4] S. C. Lee, Y. D. Jeon, K. D. Kim, J. K. Kwon, J. Kim, J. W. Moon, and
in a 0.18 µm CMOS process, it shows somewhat bet- W. Lee, “A 10 b 205 MS/s 1 mm2 90 nm CMOS pipeline ADC for flat-
panel display applications,” in IEEE Int. Dig. Tech. Papers, Solid-State
ter power efficiency than the ADCs in deep sub-micron Circuits Conf., Feb. 2007, pp. 458–615.
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Power A. Briskemyr, C. Holdo, and O. Moldsvor, “A 92.5 mW 205 MS/s
FoM = ENOB . (2) 10 b pipeline IF ADC implemented in 1.2/3.3 V 0.13 µm CMOS,”
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V. C ONCLUSION [6] P. Bogner, F. Kuttner, C. Kropf, T. Hartig, M. Burian, and E. Hermann,
“A 14 b 100 MS/s digitally self-calibrated pipelined ADC in 0.13 µm
This paper proposed a double-channel 10 b 200 MS/s CMOS,” in IEEE Int. Dig. Tech. Papers, Solid-State Circuits Conf.,
Feb. 2006, pp. 832–841.
0.18 µm CMOS pipeline ADC based on time-interleaving and
[7] D. G. Nairn, “Time-interleaved analog-to-digital converters,” in Proc.
op-amp sharing techniques to minimize power dissipation and CICC, Sep. 2008, pp. 289–296.
channel mismatch. The dual-channel time-interleaved scheme [8] S. Y. Chuang and T. L. Sculley, “A digitally self-calibrating 14-bit
reduced the required operating speed of amplifiers in the 10-MHz CMOS pipelined A/D converter,” IEEE J. Solid-State Circuits,
vol. 37, no. 6, pp. 674–683, Jun. 2002.
SHA and MDACs by half. The switched and shared op-
[9] J. Bjornsen, O. Moldsvor, T. Sather, and T. Ytterdal, “A 220 mW 14 b
amp with two differential input pairs amplified each channel 40MSPS gain calibrated pipelined ADC,” in Proc. 31st Eur. Solid-State
signal without extra series switches and memory effects, while Circuits Conf., Sep. 2005, pp. 165–168.
the shared op-amp minimized the gain, offset and bandwidth [10] S. T. Ryu, S. Ray, B. S. Song, G. H. Cho, and K. Bacrania, “A 14 b linear
capacitor self-trimming pipelined ADC,” IEEE J. Solid-State Circuits,
mismatches that are usually observed in the conventional dual- vol. 39, no. 11, pp. 2046–2051, Nov. 2004.
channel ADCs using separate amplifiers for each channel. [11] K. H. Lee, H. C. Choi, K. J. Moon, Y. L. Kim, and S. H. Lee,
The Flash ADCs employed a DDA type shared pre-amp with “Calibration-free 14 b 70 MS/s 0.13 µm CMOS pipeline A/D convert-
two latches to continuously process the dual-channel outputs ers based on high-matching 3D symmetric capacitors,” Electron Lett.,
vol. 43, no. 6, pp. 35–36, Mar. 2007.
from the SHA and MDACs. The conventional sampling-time [12] K. Nagaraj, H. S. Fetterman, J. Anidjar, S. H. Lewis, and R. G.
mismatch, which was caused by parasitic load and logic gate- Renninger, “A 250-mW, 8-b, 52-Msamples/s parallel-pipelined A/D
delay mismatches in a clock generator, was reduced by the converter with reduced number of amplifiers,” IEEE J. Solid-State
Circuits, vol. 32, no. 3, pp. 312–320, Mar. 1997.
proposed low-jitter input sampling clock. The prototype ADC
[13] K. H. Lee, S. W. Lee, Y. J. Kim, K. S. Kim, and S. H. Lee, “Ten-bit
implemented in a 0.18 µm CMOS technology occupied an 100 MS/s 24.2 mW 0.8 mm2 0.18 µm CMOS pipeline ADC based on
active area of 1.28 mm2 and the measured DNL and INL maximal circuit sharing schemes,” Electron Lett., vol. 45, no. 25, pp.
were within 0.62 and 0.99 LSB, respectively. At 200 MS/s, 1296–1297, Dec. 2009.
[14] Y. J. Kim, K. H. Lee, M. H. Lee, and S. H. Lee, “A 0.31 pJ/conversion-
the prototype ADC demonstrates a maximum measured SNDR step 12-bit 100 MS/s 0.13 µm CMOS A/D Converter for 3G com-
of 52.8 dB and a maximum SFDR of 60.4 dB, consuming munication systems,” IEICE Trans. Electron., vol. E92-C, no. 9,
54.0 mW at a 1.8 V supply voltage. pp. 1194–1200, Sep. 2009.
[15] H. Alzaher and M. Ismail, “A CMOS fully balanced differential differ-
ence amplifier and its application,” IEEE Trans. Circuits Syst. II, vol. 48,
R EFERENCES no. 6, pp. 614–620, Jun. 2001.
[16] B. S. Park, S. H. Ji, M. H. Choi, K. H. Lee, G. C. Ahn, and S. H. Lee,
[1] S. C. Lee, G. H. Kim, J. K. Kwon, J. D. Kim, and S. H. Lee, “Offset “A 10 b 100 MS/s 25.2 mW 0.18 µm CMOS ADC with various circuit
and dynamic gain-mismatch reduction techniques for 10 b 200 MS/s sharing techniques,” in Proc. IEEE Int. SoC Design Conf., Nov. 2009,
parallel pipeline ADCs,” in Proc. 31st Eur. Solid-State Circuits Conf., pp. 329–332.
Sep. 2005, pp. 531–534. [17] S. M. Myung, Y. G. Kwon, S. P. Nam, H. J. Kim, and S. H. Lee,
[2] L. Sumanen, M. Waltari, and K. A. I. Halonen, “A 10-bit 200-MS/s “A circuit-shared double-channel low-power 10 b 170 MS/s 0.18 µm
CMOS parallel pipeline A/D converter,” IEEE J. Solid-State Circuits, CMOS ADC,” in Proc. ITC-CSCC, Jun. 2011, pp. 279–282.
vol. 36, no. 7, pp. 1048–1055, Jul. 2001. [18] S. M. Louwsma, A. J. M. V. Tuijl, M. Vertregt, and B. Nauta, “A
[3] C. C. Hsu, C. C. Huang, Y. H. Lin, and C. C. Lee, “A 10 b 200 MS/s 1.35 GS/s, 10 b, 175 mW time-interleaved AD converter in 0.13 µm
pipelined folding ADC with offset calibration,” in Proc. 33rd Eur. Solid- CMOS,” IEEE J. Solid-State Circuits, vol. 43, no. 4, pp. 778–786,
State Circuits Conf., Sep. 2007, pp. 151–154. Apr. 2008.
This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.
[19] S. Gupta, M. Choi, M. Inerfield, and J. Wang, “A 1 GS/s 11 b time- Tai-Ji An received the B.S. degree in electronic
interleaved ADC in 0.13 µm CMOS,” in IEEE Int. Solid-State Circuits engineering from the University of Seoul, Seoul,
Conf., Dig. Tech. Papers, Feb. 2006, pp. 264–265. Korea, in 2007. He is currently pursuing the M.S.
[20] S. C. Lee, K. D. Kim, J. K. Kwon, J. D. Kim, and S. H. Lee, “A 10 bit degree in electronic engineering with Sogang Uni-
400 MS/s 160 mW 0.13 µm CMOS dual-channel pipeline ADC without versity, Seoul.
channel mismatch calibration,” IEEE J. Solid-State Circuits, vol. 41, He was with Luxen Technologies, Seoul, from
no. 7, pp. 1596–1605, Jul. 2006. 2007 to 2011. His current research interests include
[21] V. Karutharaja, M. Bhaskar, and B. Venkataramani, “Synchronization of design of high-resolution low-power CMOS data
on-chip serial interconnect transceivers using delay locked loop (DLL),” converts, PMICs, and very high-speed mixed-mode
in Proc. Int. Conf., Signal Process., Commun., Comput. Netw. Technol., integrated systems.
Jul. 2011, pp. 213–216.
[22] N. Kurosawa, H. Kobayashi, H. Sugawara, and K. Kobayashi, “Explicit
analysis of channel mismatch effects in time-interleaved ADC systems,”
IEEE Trans. Circuits Syst. I, Fundam. Theory Appl., vol. 48, no. 3, Sung-Meen Myung (S’11) received the B.S. and
pp. 261–271, Mar. 2001. M.S. degrees in electronic engineering from Sogang
[23] Y. Chai and J. T. Wu, “A 5.37 mW 10 b 200 MS/s dual-path pipelined University, Seoul, Korea, in 2010 and in 2012,
ADC,” in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, respectively.
Feb. 2012, pp. 462–464. He has been with the Display Driver Solution
Team, Brand Business Division, Dongbu HiTek Co.,
[24] T. Nezuka, K. Misawa, J. Azami, Y. Majima, and J. Okamura, “A 10-bit
Ltd., Seoul, since 2012. His current research inter-
200 MS/s pipeline A/D converter for high-speed video signal digitizer,”
ests include analog IC design for TFT-LCD drivers
in Proc. IEEE Asian Solid-State Conf., Nov. 2006, pp. 459–463.
and very high-speed mixed-mode integrated systems.
[25] Y. D. Jeon, Y. K. Cho, J. W. Nam, K. D. Kim, W. Y. Lee, K. T. Hong,
and J. K. Kwon, “A 9.15 mW 0.22 mm2 10 b 204 MS/s pipelined SAR
ADC in 65 nm CMOS,” in Proc. IEEE Custom Integr. Circuits Conf.,
Sep. 2010, pp. 19–22.
[26] Z. Cao and S. Yan, “A 52 mW 10 b 210 MS/s two-step ADC for digital- Seung-Hoon Lee (M’91) received the B.S. and M.S.
IF receivers in 0.13 µm CMOS,” in Proc. IEEE Custom Integr. Circuits degrees (Hons.) in electronic engineering from Seoul
Conf., Sep. 2008, pp. 309–312. National University, Seoul, Korea, in 1984 and in
1986, respectively, and the Ph.D. degree in electrical
and computer engineering from the University of
Illinois, Urbana-Champaign, in 1991.
He was with Analog Devices Semiconductor,
Wilmington, MA, from 1990 to 1993, as a Senior
Design Engineer. Since 1993, he has been with
the Department of Electronic Engineering, Sogang
University, Seoul, where he is currently a Professor.
His current research interests include design and testing of high-resolution
high-speed CMOS data converters, CMOS communication circuits, integrated
Hyo-Jin Kim received the B.S. degree in electronic
sensors, and mixed-mode integrated systems.
engineering from Suwon University, Suwon, Korea,
Dr. Lee is a member of the editorial board and the technical program
in 2011. She is currently pursuing the M.S. degree in
committee of many international and domestic journals and conferences
electronic engineering of Sogang University, Seoul,
including the IEEK Journal of Semiconductor Devices, Circuits, and Systems,
Korea.
and the IEICE T RANSACTIONS ON E LECTRONICS , and the IEEE Symposium
Her current research interests include design of
on VLSI Circuits. Since 2006, he has been organizing various industry-
high-resolution low-power CMOS data converters
university cooperative programs with many companies such as Samsung
and very high-speed mixed-mode integrated systems.
Electronics, SK Hynix Semiconductor, and LG Electronics. In 2010, he
founded Analog IP Research Center supported by the Ministry of Knowledge
and Economy, Korea.