Derivation of Diode Equation

No current is flowed from the junction at equilibrium

condition.
The following equations of carrier concentration of electron
and hole for non degenerate semiconductors
E F − ECP E F − ECN
n p = nC e kT
nn = nC e kT

EVP − E F EVN − E F

p p = nV e kT pn = nV e kT

pp EVP − E F − EVN − E F e∆Φ

=e
−
kT
EEvp

=e
VN

kT
pn
− e∆Φ pn junction in equilibrium
pn = p p e kT
condition (without bias)
− (e∆Φ − V )
In Forward bias ′
pn = p p e kT
 When we forward bias , the Barrier height will be reduced.
The hole will be injected towards the n region. The injected
holes
′
∆p = pn − pn

− e ( ∆Φ −V ) − e∆Φ
= p pe kT
− p pe kT

− e∆Φ − eV − e∆Φ
= p pe kT
e kT
− p pe kT

− e∆Φ
 −kTeV 
= p pe kT
e − 1
 
 eV 
= pn e kT − 1
 
Current due to injected holes
∂ (∆p ) Dp is diffusion coefficient
J h = −eD p
∂x of minority carrier holes
 −x
 in n region
∂  Lp 
J h = −eD p ∆p0 e  Lp is diffusion length for
∂x   holes

−x
eD p ∆p 0 Lp
= e
Lp

eD p ∆p
=
Lp
eD p  eV

=  pn (e − 1) 
kT
Lp  
eD p pn  eV 
= (e − 1) 
kT
Lp  
 Similarly current due to injected electron is given by
eDn n p  eV 
Je = e kT
− 1 Dn is diffusion coefficient of minority
Ln   carrier electrons in p region. Ln is
diffusion length for electrons

eD p Pn eV
eDn Pp eV
J = J e + J h= (e kT
− 1) + (e kT
− 1)
Lp Lp
 eD p Pn eDn Pp  eV
J = + (e kT − 1)
 L L 
 p p 
eV
= J o (e kT
− 1)
 eD p Pn eDn Pp 
J o=  + 
 L L 
 p p 
For an ideal diode J0 should be as small as
possible
For V=+Ve J=J0 ( eeV/kT- 1)
For V=-Ve J=-J0
 Recombination and Generation in transition region
Diode Ideality Factor
In analogy to the p-n junction we have assumed that the
recombination and thermal generation of carriers occur
primarily in the neutral p and n region, outside the transition
region. In this model forward current in the diode is due to
injection carriers into the neutral region. The reverse
saturation current is due to thermal generation of EHP in the
neutral region.
A more complete description of junction operation should
include recombination and generation in the transition region.
When a junction is forward biased, the transition region
contains Excess carriers of both type, which are in transit of
one side of the junction to the other. Unless the width of the
transition region is being small compared with carrier diffusion
length Ln and Lp recombination can take place within the
transition region(W).
The diode equation can be modified to include this effect by
including the parameter n .
I=I0(eeV/nkT -1)
Where n varies between 1 and 2.
Since n determines the departure from the ideal diode
characteristics ,it is often called the ideality factor