BUK7908-40AIE

N-channel TrenchPLUS standard level FET

Rev. 03 — 17 February 2009 Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed
and qualified to the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

„ Electrostatically robust due to „ Reduced component count due to
integrated protection diodes integrated current sensor
„ Low conduction losses due to low „ Suitable for standard level gate drive
on-state resistance sources
„ Q101 compliant

1.3 Applications
„ Electrical Power Assisted Steering „ Variable Valve Timing for engines
(EPAS)

1.4 Quick reference data

Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 40 V
ID drain current VGS = 10 V; Tmb = 25 °C; [1] - - 117 A
see Figure 2; see Figure 3
Static characteristics
RDSon drain-source VGS = 10 V; ID = 50 A; - 6 8 mΩ
on-state resistance Tj = 25 °C; see Figure 7;
see Figure 8
ID/Isense ratio of drain current Tj > -55 °C; Tj < 175 °C; 450 500 550
to sense current VGS > 10 V

[1] Current is limited by power dissipation chip rating.

Nexperia BUK7908-40AIE
N-channel TrenchPLUS standard level FET

2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
mb d
2 ISENSE sense current
3 D drain
4 KS Kelvin source
g
5 S source
mb D mounting base; connected to
drain s
MBL368 Isense Kelvin source

12 3 4 5

SOT263B
(TO-220)

3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BUK7908-40AIE TO-220 plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead SOT263B
TO-220

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Product data sheet Rev. 03 — 17 February 2009 2 of 15

Nexperia BUK7908-40AIE
N-channel TrenchPLUS standard level FET

4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V
VDGR drain-gate voltage RGS = 20 kΩ - 40 V
VGS gate-source voltage -20 20 V
ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 2; [1] - 117 A
see Figure 3 [2] - 75 A
Tmb = 100 °C; VGS = 10 V; see Figure 2 [2] - 75 A
IDM peak drain current Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 - 468 A
Ptot total power dissipation Tmb = 25 °C; see Figure 1 - 221 W
IGS(CL) gate-source clamping continuous - 10 mA
current pulsed; tp = 5 ms; δ = 0.01 - 50 mA
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
Source-drain diode
IS source current Tmb = 25 °C [1] - 117 A
[2] - 75 A
ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - 468 A
Avalanche ruggedness
EDS(AL)S non-repetitive ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; - 0.63 J
drain-source avalanche Tj(init) = 25 °C; unclamped
energy
Electrostatic discharge
Vesd electrostatic discharge HBM; C = 100 pF; R = 1.5 kΩ - 6 kV
voltage

[1] Current is limited by power dissipation chip rating.

[2] Continuous current is limited by package.

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Product data sheet Rev. 03 — 17 February 2009 3 of 15

Nexperia BUK7908-40AIE
N-channel TrenchPLUS standard level FET

03na19
120 03ni93
120

Pder ID
(%) (A)

80
80

Capped at 75 A due to package

40 40

0 0
0 50 100 150 200 0 50 100 150 200
Tmb (°C) Tmb (°C)

Fig 2. Normalized continuous drain current as a

Fig 1. Normalized total power dissipation as a function of mounting base temperature
function of mounting base temperature

03nl55
103

ID
(A)
Limit RDSon = VDS / ID tp = 10 μ s

102
100 μ s

1 ms
Capped at 75 A due to package
DC 10 ms
10
100 ms

1
1 10 VDS (V) 102

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

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Product data sheet Rev. 03 — 17 February 2009 4 of 15

Nexperia BUK7908-40AIE
N-channel TrenchPLUS standard level FET

5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from vertical in still air - 60 - K/W
junction to ambient
Rth(j-mb) thermal resistance from see Figure 4 - - 0.68 K/W
junction to mounting base

03nj21
1

Zth(j-mb) δ = 0.5
(K/W)
0.2

10-1 0.1

0.05

0.02

10-2 tp
P δ=
T
single shot

tp t
T
10-3
10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

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Product data sheet Rev. 03 — 17 February 2009 5 of 15

Nexperia BUK7908-40AIE
N-channel TrenchPLUS standard level FET

6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 40 - - V
breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 36 - - V
VGS(th) gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C; 2 3 4 V
voltage see Figure 9
ID = 1 mA; VDS = VGS; Tj = 175 °C; 1 - - V
see Figure 9
ID = 1 mA; VDS = VGS; Tj = -55 °C; - - 4.4 V
see Figure 9
IDSS drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.1 10 µA
VDS = 40 V; VGS = 0 V; Tj = 175 °C - - 250 µA
V(BR)GSS gate-source breakdown IG = 1 mA; VDS = 0 V; Tj > -55 °C; 20 22 - V
voltage Tj < 175 °C
IG = -1 mA; VDS = 0 V; Tj > -55 °C; 20 22 - V
Tj < 175 °C
IGSS gate leakage current VDS = 0 V; VGS = 10 V; Tj = 25 °C - 22 300 nA
VDS = 0 V; VGS = -10 V; Tj = 25 °C - 22 300 nA
VDS = 0 V; VGS = 10 V; Tj = 175 °C - - 10 µA
VDS = 0 V; VGS = -10 V; Tj = 175 °C - - 10 µA
RDSon drain-source on-state VGS = 10 V; ID = 50 A; Tj = 25 °C; - 6 8 mΩ
resistance see Figure 7; see Figure 8
VGS = 10 V; ID = 50 A; Tj = 175 °C; - - 15.2 mΩ
see Figure 7; see Figure 8
R(D-ISENSE) drain-ISENSE on-state VGS = 10 V; ID = 10 mA; Tj = 25 °C 1.59 1.87 2.2 Ω
on resistance VGS = 10 V; ID = 10 mA; Tj = 175 °C 3.02 3.55 4.18 Ω
ID/Isense ratio of drain current to VGS > 10 V; Tj > -55 °C; Tj < 175 °C 450 500 550
sense current
Dynamic characteristics
QG(tot) total gate charge ID = 25 A; VDS = 32 V; VGS = 10 V; - 78 84 nC
QGS gate-source charge Tj = 25 °C; see Figure 14 - 14 16 nC
QGD gate-drain charge - 34 36 nC
Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; - 2670 3140 pF
Coss output capacitance Tj = 25 °C; see Figure 12 - 900 1053 pF
Crss reverse transfer - 560 653 pF
capacitance
td(on) turn-on delay time VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; - 19 - ns
tr rise time RG(ext) 10 Ω; Tj = 25 °C - 76 - ns
td(off) turn-off delay time - 121 - ns
tf fall time - 122 - ns

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Product data sheet Rev. 03 — 17 February 2009 6 of 15

Nexperia BUK7908-40AIE
N-channel TrenchPLUS standard level FET

Table 6. Characteristics …continued

Symbol Parameter Conditions Min Typ Max Unit
LD internal drain from upper edge of drain mounting base to - 2.5 - nH
inductance centre of die; Tj = 25 °C
LS internal source from source lead to source bond pad; - 7.5 - nH
inductance Tj = 25 °C; lead length 6 mm
Source-drain diode
VSD source-drain voltage IS = 40 A; VGS = 0 V; Tj = 25 °C; - 0.85 1.2 V
see Figure 17
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V; - 55 - ns
Qr recovered charge VDS = 30 V; Tj = 25 °C - 30 - nC

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Product data sheet Rev. 03 — 17 February 2009 7 of 15

Nexperia BUK7908-40AIE
N-channel TrenchPLUS standard level FET

03nn70 03nn72
400 16
ID 10 9 Label is VGS (V) RDSon
(A) (Ω)
20 8.5
300 12
8
7.5

7
200 8
6.5

100 5.5 4
5
4.5
4
0 0
0 2 4 6 8 10 4 8 12 16 20
VDS (V) VGS (V)

Fig 5. Output characteristics: drain current as a Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values of gate-source voltage; typical values

03ni30
03nn71 2.0
20
5.5
a
RDSon 6 Label is VGS (V)
6.5
(mΩ) 1.6
7 7.5 8
16

1.2

12

0.8

10
8
0.4
20

4 0
0 100 200 300 I (A) 400 −60 0 60 120 180
D Tj (°C)

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature

BUK7908-40AIE_3 © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 03 — 17 February 2009 8 of 15

Nexperia BUK7908-40AIE
N-channel TrenchPLUS standard level FET

03aa32 03aa35
5 10−1
VGS(th) ID
(V) (A)
min typ max
4 10−2
max

3 10−3
typ

2 min 10−4

1 10−5

0 10−6
−60 0 60 120 180 0 2 4 6
Tj (°C) VGS (V)

Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of
junction temperature gate-source voltage

03nn73 03nn76
80 5000
gfs C
(S) (pF)

60 3750

Ciss

40 2500 Coss
Crss

20 1250

0 0
0 25 50 75 I (A) 100 10-1 1 10 102
D VDS (V)

Fig 11. Forward transconductance as a function of Fig 12. Input, output and reverse transfer capacitances
drain current; typical values as a function of drain-source voltage; typical
values

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Product data sheet Rev. 03 — 17 February 2009 9 of 15

Nexperia BUK7908-40AIE
N-channel TrenchPLUS standard level FET

03nn74 03nn77
100 10
ID VGS
(A) (V)
8
75
VDS = 14 V

6
32 V
50
175 °C
4

25
2
Tj = 25 °C

0 0
0 2 4 6 8 0 25 50 75 100
VGS (V) QG (nC)

Fig 13. Transfer characteristics: drain current as a Fig 14. Gate-source voltage as a function of charge;
function of gate-source voltage; typical values typical values

03nn79 03nn78
600 6

ID/Isense RD(Is)on
(Ω)

550
4

500

2
450

400 0
4 8 12 16 20 4 8 12 16 20
VGS (V) VGS (V)

Isense = 25mA
Fig 15. Drain-sense current ratio as a functionof Fig 16. Drain-sense current on-state resistance as a
gate-source voltage; typical values
function of gate-source voltage; typical values

BUK7908-40AIE_3 © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 03 — 17 February 2009 10 of 15

Nexperia BUK7908-40AIE
N-channel TrenchPLUS standard level FET

03nn75
100

ID
(A)
75

50
175 °C

25
Tj = 25 °C

0
0.0 0.4 0.8 1.2
VSD (V)

Fig 17. Drain current as a function of source-drain diode voltage; typical values

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Product data sheet Rev. 03 — 17 February 2009 11 of 15

Nexperia BUK7908-40AIE
N-channel TrenchPLUS standard level FET

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 SOT263B

E
p1 A
∅p A1

q
D1

mounting
D base

L1
Q

m L2
L

1 5

e b w M c

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

(1) (2)
UNIT A A1 b c D D1 E e L L1 L2 m ∅p p1 q Q w

4.5 1.39 0.85 0.7 15.8 6.4 10.3 15.0 2.4 0.8 3.8 4.3 3.0 2.6
mm 1.7 0.5 0.4
4.1 1.27 0.70 0.4 15.2 5.9 9.7 13.5 1.6 0.6 3.6 4.1 2.7 2.2

Notes
1. Terminal dimensions are uncontrolled in this zone.
2. Positional accuracy of the terminals is controlled in this zone.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT263B 5-lead TO-220 01-01-11

Fig 18. Package outline SOT263B (TO-220)

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Product data sheet Rev. 03 — 17 February 2009 12 of 15

Nexperia BUK7908-40AIE
N-channel TrenchPLUS standard level FET

8. Revision history
Table 7. Revision history
Document ID
BUK7908-40AIE_3
Modifications:
BUK71_7908_40AIE-02
(9397 750 12086)
BUK71_7908_40AIE-01
(9397 750 11695)
Release date Data sheet status Change notice Supersedes
20090217 Product data sheet - BUK71_7908_40AIE-02
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK7908-40AIE separated from data sheet BUK71_7908_40AIE-02.
20031024 Product data sheet - BUK71_7908_40AIE-01
20030819 Product data sheet - -

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Product data sheet Rev. 03 — 17 February 2009 13 of 15

Nexperia BUK7908-40AIE
N-channel TrenchPLUS standard level FET

9. Legal information

9.1 Data sheet status

Document status [1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.

9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Nexperia does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — Nexperia products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nexperia.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by Nexperia. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

10. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

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Product data sheet Rev. 03 — 17 February 2009 14 of 15

Nexperia BUK7908-40AIE
N-channel TrenchPLUS standard level FET

11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14
9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
10 Contact information. . . . . . . . . . . . . . . . . . . . . .14

© Nexperia B.V. 2017. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 17 February 2009