MOSFET

MetalOxideSemiconductorFieldEffectTransistor

CoolMOS™C6650V
650VCoolMOS™C6PowerTransistor
IPD65R1K4C6

DataSheet
Rev.2.1
Final

Industrial&Multimarket
 650VCoolMOS™C6PowerTransistor

IPD65R1K4C6

1Description DPAK

CoolMOS™isarevolutionarytechnologyforhighvoltagepower tab
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact, 2
lighterandcooler. 1

Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
Drain
•Veryhighcommutationruggedness Pin 2
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Fully qualified according to JEDEC for Industrial Applications Gate
Pin 1

Source
Applications Pin 3

HardswitchingPWMstagesandresonantswitchingPWMstagesfore.g.
PCSilverbox,Adapter,LCD&PDPTVandLighting.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj max 700 V
RDS(on),max 1.4 Ω
Qg,typ 10.5 nC
ID,pulse 8.3 A
Eoss @ 400V 1.15 µJ
Body diode di/dt 500 A/µs

Type/OrderingCode Package Marking RelatedLinks

IPD65R1K4C6 PG-TO 252 65C61K4 see Appendix A

Final Data Sheet 2 Rev. 2.1, 2020-05-20

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TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Final Data Sheet 3 Rev. 2.1, 2020-05-20

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IPD65R1K4C6

2Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Continuous drain current 1) ID 3.2 A TC=25°C
2.0 TC=100°C
Pulsed drain current 2)
ID‚pulse 8.3 A TC=25°C
ID=0.6A,VDD=50V
Avalanche energy, single pulse EAS 26 mJ
(see table 10)
Avalanche energy, repetitive EAR 0.10 mJ ID=0.6A,VDD=50V
Avalanche current, repetitive IAR 0.6 A
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...480V
Gate source voltage VGS -20 20 V static
-30 30 AC (f > 1 Hz)
Operating and storage temperature Tj‚Tstg -55 150 °C
Continuous diode forward current IS 2.8 A TC=25°C
Diode pulse current IS‚pulse 8.3 A TC=25°C

Reverse diode dv/dt 3) dv/dt 15 V/ns VDS=0...400V,ISD≤ID,

Tj=25°C
(see table 8)
Maximum diode commutation speed dif/dt 500 A/µs
Power dissipation Ptot 28 W TC=25°C

1)
Limited by Tj max. Maximum duty cycle D=0.75
2)
Pulse width tp limited by Tj max
3)
Identical low side and high side switch with identical RG
Final Data Sheet 4 Rev. 2.1, 2020-05-20
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3Thermalcharacteristics
Table3ThermalcharacteristicsDPAK
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC 4.4 °C/W
Thermal resistance, junction - ambient 1)
RthJA 62 °C/W leaded
SMD version, device on PCB,
35
6cm² cooling area
Soldering temperature, wave- & 1.6 mm (0.063 in.) from case for
Tsold 260 °C
reflowsoldering allowed 10s

1)
Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet 5 Rev. 2.1, 2020-05-20
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4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 650 V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=0.1mA
Zero gate voltage drain current IDSS 1 µA VDS=650V,VGS=0V,Tj=25°C
10 VDS=650V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) 1.260 1.4 Ω VGS=10V,ID=1.0A,Tj=25°C
3.280 VGS=10V,ID=1A,Tj=150°C
Gate resistance RG 6.5 Ω f=1MHz,opendrain

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss 225 pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss 18 pF
Effective output capacitance, energy
Co(er) 10 pF VGS=0V,VDS=0...480V
related 1)
Effective output capacitance, time related ID=constant,VGS=0V,
Co(tr) 42 pF
2) VDS=0...480V
Turn-on delay time td(on) 7.7 ns VDD=400V,VGS=13V,ID=1.5A,
RG=10.2Ω
Rise time tr 5.9 ns
(see table 9)
Turn-off delay time td(off) 33 ns
Fall time tf 18.2 ns

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs 1.3 nC VDD=480V,ID=1.5A,
VGS=0to10V
Gate to drain charge Qgd 5.8 nC
Gate charge total Qg 10.5 nC
Gate plateau voltage Vplateau 5.4 V

1)
Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
2)
Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
Final Data Sheet 6 Rev. 2.1, 2020-05-20
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Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD 0.9 V VGS=0V,IF=1.5A,Tj=25°C
Reverse recovery time trr 200 ns VR=400V,IF=1.5A,
diF/dt=100A/µs
Reverse recovery charge Qrr 0.9 µC
(see table 8)
Peak reverse recovery current Irrm 8 A

Final Data Sheet 7 Rev. 2.1, 2020-05-20

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5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Max.transientthermalimpedance
30 101

25 0.5

0.2
20 100
0.1

ZthJC[K/W]
0.05
Ptot[W]

15

0.02
10 10-1 0.01
single pulse

0 10-2
0 40 80 120 160 10-5 10-4 10-3 10-2 10-1
TC[°C] tp[s]
Ptot=f(TC) ZthJC=f(tP);parameter:D=tp/T

Diagram3:Safeoperatingarea Diagram4:Safeoperatingarea
2
10 102

1 µs
101 101 1 µs

10 µs
10 µs

100 µs
ID[A]

ID[A]

100 100 100 µs

1 ms
1 ms
10 ms
10 ms
10-1 10-1
DC
DC

10-2 10-2
100 101 102 103 100 101 102 103
VDS[V] VDS[V]
ID=f(VDS);VGS>7V;TC=25°C;D=0;parameter:tp ID=f(VDS);VGS>7V;TC=80°C;D=0;parameter:tp

Final Data Sheet 8 Rev. 2.1, 2020-05-20

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Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
12 7

20 V
20 V 6 10 V
10
10 V 8V

5
8
8V 7V
4
ID[A]

ID[A]
6
7V
3 6V

4
5.5 V
2
6V
5V
2 5.5 V
1 4.5 V
5V
4.5 V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
8 4

3
6

5
RDS(on)[Ω]

RDS(on)[Ω]

5 V 5.5V 6V 6.5 V 7V
2 98% typ
10 V
4

3
1

1 0
0 1 2 3 4 5 6 -60 -20 20 60 100 140 180
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=1.0A;VGS=10V

Final Data Sheet 9 Rev. 2.1, 2020-05-20

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IPD65R1K4C6

Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
10 10

9
25 °C
8 8

120 V 480 V
7

6 6

VGS[V]
ID[A]

150 °C
5

4 4

2 2

0 0
0 2 4 6 8 10 0 5 10 15
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=1.5Apulsed;parameter:VDD

Diagram11:Avalancheenergy Diagram12:Drain-sourcebreakdownvoltage
30 750

725
25

700

20
675
EAS[mJ]

VBR(DSS)[V]

15 650

625
10

600

5
575

0 550
0 50 100 150 200 -60 -20 20 60 100 140 180
Tj[°C] Tj[°C]
EAS=f(Tj);ID=0.6A;VDD=50V VBR(DSS)=f(Tj);ID=1.0mA

Final Data Sheet 10 Rev. 2.1, 2020-05-20

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Diagram13:Typ.capacitances Diagram14:Typ.Cossstoredenergy
104 2.00

1.80

1.60
103
1.40
Ciss
1.20

Eoss[µJ]
C[pF]

102 1.00

0.80
Coss
0.60
101
0.40

Crss 0.20

100 0.00
0 100 200 300 400 500 600 0 100 200 300 400 500 600
VDS[V] VDS[V]
C=f(VDS);VGS=0V;f=1MHz Eoss=f(VDS)

Diagram15:Forwardcharacteristicsofreversediode
101

125 °C 25 °C
IF[A]

100

10-1
0.0 0.5 1.0 1.5 2.0
VSD[V]
IF=f(VSD);parameter:Tj

Final Data Sheet 11 Rev. 2.1, 2020-05-20

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6TestCircuits

Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

V ,I
Rg1 VDS( peak)
VDS
VDS

VDS IF
trr
tF tS
Rg 2 dIF / dt
IF t
QF QS 10 %Irrm
IF dIrr / dt trr =tF +tS
Irrm Qrr = QF + QS
Rg1 = Rg 2

Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS
ID VDS VD

VDS VDS
ID

Final Data Sheet 12 Rev. 2.1, 2020-05-20

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7PackageOutlines

MILLIMETERS
DIMENSION
MIN. MAX.
DOCUMENT NO.
A 2.16 2.41
Z8B00003328
A1 0.00 0.15
b 0.64 0.89 REVISION
b2 0.65 1.15 07
b3 4,95 5.50 SCALE:
c 0.46 0.61
10:1
c2 0.40 0.98
D 5.97 6.22 0 1 2mm
D1 5.02 5.84
E 6.35 6.73
E1 4.32 5.50 EUROPEAN PROJECTION
e 2.29
e1 4.57
N 3
H 9.40 10.48
L 1.18 1.78
L3 0.89 1.27 ISSUE DATE
L4 0.51 1.02 01.04.2020

Figure1OutlinePG-TO252,dimensionsinmm

Final Data Sheet 13 Rev. 2.1, 2020-05-20

 650VCoolMOS™C6PowerTransistor

IPD65R1K4C6

8AppendixA

Table11RelatedLinks
• IFXC6ProductBrief:www.infineon.com

• IFXC6Portfolio:www.infineon.com

• IFXCoolMOSWebpage:www.infineon.com

• IFXDesignTools:www.infineon.com

Final Data Sheet 14 Rev. 2.1, 2020-05-20

650VCoolMOSªC6PowerTransistor
IPD65R1K4C6

RevisionHistory
IPD65R1K4C6

Revision:2020-05-26,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2013-07-26 Release of final version
2.1 2020-05-26 Update of the package outlines

Trademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2020InfineonTechnologiesAG
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
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15 Rev.2.1,2020-05-26