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L5 - Capacitive Accelerometers
L5 - Capacitive Accelerometers
Lecture 5
http://www.microsystems.metu.edu.tr/gyroscope/gyroscope.html
http://www.findmems.com/bosch/mems-bosch-automotive-applications-and-beyond
2
Applications
• Crash/shock detection
e.g. for air-bag deployment in cars
• Vibration analysis
e.g. industrial machinery
• Feedback signals
e.g. to stabilize the image in a video recorder
or to control the flight of a plane
• Mobile devices (incl. smartphones)
• Disk drive protection (e.g. in laptops)
• Gaming systems
• Sports and health devices
• Earthquake analysis
• Building and structural monitoring
• Inertial navigation systems
http://www.greencarsite.co.uk/econews/electric-car-crash-test-ncap-results.htm
http://www.reliableplant.com/Read/27324/Vibration-analysis-bearing-wear
http://sportsbioengineering.com/sportsaccelerometergyroscope.html
http://en.wikipedia.org/wiki/Accelerometer 3
To read: Senturia 19.2
How do we measure acceleration ?
Spring-mass Transduction
b k x Electrical
circuit
m
m.a(t)
Voltage V(t)
5
Piezoelectric transduction
http://dev.nsta.org/evwebs/2014102/news/default.html http://www.nanotech.dtu.dk/Research/Research%20groups/
MEMS-AppliedSensors/NewResearch 6
To read: Senturia 19.3
Capacitive transduction
Idem. electrostatic actuator (cf. projection displays)
Capacitance varies with
• distance d between electrodes,
• effective area A of the electrodes,
• Permittivity ε of the dielectric between electrodes
Senturia, p.501
Sensitivity increased
with many electrodes
(comb drive)
http://matthieu.lagouge.free.fr/mems/hist_app.html ADXL250
https://nepp.nasa.gov/eeelinks/February2002/Thermal_and_Mechanical_Reliability.htm 8
ADXL150
Senturia, p.514
9
From acceleration to displacement
x(t)
Damping b due to the interstitial fluid b
Natural frequency:
m
Quality factor:
m.a(t)
Dimensionless variables:
Dimensionless equation:
10
From acceleration to displacement
11
Analysis of the dimensionless harmonic resonator
• This means that for Q > 1/sqrt(2) there is a maximum at ω > 0 and for Q ≤ 1/sqrt(2)
no maximum is found and the amplitude decreases with frequency.
12
Frequency response and Bode plots
Q=5 Q=5
Q=1/2
Q=1/2
Q=1/20
Q=1/20
Q<1/2 over-damped
Q=1/2 critically damped
Q>1/2 under-damped
In general,
1. the frequencies present in a(t) are below the natural frequency, AND
2. the quality factor Q is not too low (i.e. not too much damping)
« quasi-static » accelerometers
In dimensional terms,
Good response at high freq. take ω0 large (e.g. with piezoelectric transduction)
14
Low-frequency versus high-frequency response
• The low-frequency response describes the accelerometer operation below its
mechanical resonant frequency. Most MEMS sensors operate in this region
(typical ω0 are in the 10 Hz to 10 kHz range).
Example (V. Kaajakar, Practical MEMS, 2009)
15
Low-frequency versus high-frequency response
• The high frequency responses in MEMS are used in special applications where a
very high sensitivity is required (i.e. seismographs, where the resonant frequency
might be 1Hz or lower). For this we select a very low resonant frequency.
• Example: assume k = 1 N/m and f0 = 0.2 Hz. The resulting proof mass, in this case,
would be:
This is very large ! Equivalent silicon cube has sides equal to 6.5 cm.
In order to reduce the proof mass, we can increase the spring constant (bound by
technological considerations), or increase the resonant frequency (reducing the
sensitivity). E.g. increasing f0 to 100 Hz, would reduce the proof mass to 2.5
milligram. Equivalent silicon cube has sides equal to 1 mm.
16
Revision: inverting amplifier
• Observe that there is negative feedback, i.e. the output (vo) counteracts the input
(v-) so as to force vid to zero.
• Because there is negative feedback, the voltage at v- tracks the voltage at v+.
Since v+ = 0 V, v- is forced to 0 V.
Since v- = v+ = 0 V:
Negative voltage gain implies 180o phase shift between input and output signals
(hence the name: inverting amplifier). 17
Warm-up: integrator
Integrator !
In a practical circuit, C would be shunted with a large resistor to avoid saturating the
opamp at very low frequencies.
18
Wheatstone bridge
• The measurement frequency is assumed to be significantly higher than the
frequency of the capacitance variations. In that case: IC = C. dVC/dt
• One possible circuit is to use a capacitive Wheatstone bridge. Recall that there are
significant benefits to measuring the capacitance change ratiometrically: by
looking at the difference in the capacitance changes the effect of environmental
variations can be minimized.
19
Wheatstone bridge
• Disregard CP for the time being.
• Consider two parallel plate capacitors moving in opposite directions (Cw1 and Cw2).
Parallel plate capacitances are calculated as follows:
ε is permittivity, A is the capacitor plate area, d is the initial gap between the
plates, x is the capacitor plate displacement.
20
Wheatstone bridge
• The main issue with this type of circuit are the parasitic capacitances which are
formed between any two conductors and a dielectric (such as air). We will
represent these capacitances by CP, and calculate their effect on the sensed
output voltage.
21
Wheatstone bridge
• Effect of parasitic capacitors – example.
22
Opamp circuits measuring a capacitance
• This circuit offers an improvement. The opamp is now connected as a
transimpedance amplifier (the input is a current - ic - and the output is a voltage -
Vo).
Senturia, Microsystem
Design, 2001.
24
Opamp circuits measuring a capacitance
• If VS is a sine wave, we need to take into account both terms of the previous
expression in case x is time varying.
• We can cancel out the second term by increasing the frequency of Vs, which
renders the term dx/dt negligible. In this case:
25
Opamp circuits measuring a capacitance
• When using a high-frequency AC source, so that the velocity-dependent
component of the current can be ignored, we use the following circuit.
26
Opamp circuits measuring a capacitance
• The next step is to demodulate the low frequency signal information from Vo.
Recall that VS is sinusoidal, and so Vo = - [C(x)/CF].VS is sinusoidal as well.
Senturia, Microsystem
Design, 2001.
27
Interference
• Electromagnetic interference from nearby radio, television, cell phones, ...
• EMC = electromagnetic compatibility.
• Google “EMC banana skins” for more.
• We combat interference by using careful layout as well as circuit techniques, such
as using differential signals.
• Source: NASA Reference Publication 1374, July 1995: During the Falklands War, the
British Ship H.M.S. Sheffield sank with heavy casualties after being hit by an Exocet
missile ... the system created electromagnetic interference to radio
communications to and among the contingent of Harrier jets ... While the Harriers
took off and, landed, the missile defense was disengaged to allow communications
with the jets ...
28
Noise
• Noise is a random fluctuation of electrons, atoms or molecules. Because of noise,
it is not possible to predict the instantaneous value for the measured signal. Noise
needs to be studied statistically.
• We define the noise spectral density Sn(f) as the average normalized noise power
over a 1Hz bandwidth.
• The noise spectral density is related to the total mean-squared noise for the
broadband noise source, since:
• We will discuss two noise sources: thermal noise and flicker noise.
29
Thermal noise
• Thermal noise (a.k.a. Johnson noise) is due to the thermal excitation of charge
carriers in a conductor. It occurs in any resistor, and is proportional to the
temperature.
30
Thermal noise
• Consider a noisy resistor in parallel with a capacitor.
The average value stored across the capacitor does not depend on the size of the
resistor.
31
Flicker noise
• Flicker noise is found in all active devices, but it occurs only when a DC current is
flowing. Flicker noise is caused by traps in the semiconductor, where carriers that
would normally constitute DC current flow are held for some time period and then
released.
• Flicker noise is also commonly referred to as 1/f noise (or pink noise) since it is well
modelled as having a 1/f spectral density Flicker noise is a significant noise source
in MOS transistors.
• Thermal noise and flicker noise are the two main noise sources.
T. C. Carusone, D.
Johns, K. Martin, Analog
Integrated Circuit
Design, John Wiley &
Sons, 2011.
32
To read: Senturia 16
Conclusion – there’s more to “noise” than “noise”
Comes from:
1) Interfering signals (e.g. 50Hz power-lines, broadcast radio, etc.) well-defined frequency
use shields, grounds, filtering, etc.
33
Mechanical noise in an accelerometer
• Lumped modelling of an accelerometer:
b k x
F = m.a
• The thermal noise will induce mechanical vibrations which will set the lower limit
for the acceleration that we will measure.
34
Mechanical noise in an accelerometer
• The thermal noise energy stored in the capacitor and in the inductor are going to
be identical.
• The energy stored in the capacitor is equal to (equipartition theorem):
• The energy stored in the spring should be identical to the energy stored in the
capacitor as per the lumped model:
• We can conclude:
35
Mechanical noise in an accelerometer
• In quasi-static accelerometers:
m.a = k.x b k x
F = m.a
36
Mechanical noise in an accelerometer
• How can we reduce the mechanical noise in an accelerometer ?
– Increase the mass m (not practical in MEMS).
– Decrease ω0, which essentially means increasing m and/or decreasing k. This
is comparable to limiting Δf when reducing the thermal noise of a resistor.
– Cool the sensor (or move to Antartica).
Numerical example: MEMS accelerometer, mass = 1.10-6 kg, and f0 = 2 kHz. Say T =
300K.
Compare this value to the noise rms value given in the datasheet of the ADXL335.
Noise density = 150 µg/√Hz. The datasheet mentions that:
38