Lecture #20

OUTLINE
• pn Junctions:
–transient response: turn-on
• Summary of important pn-diode
concepts
• pn diode applications

Reading: Chapters 8 & 9

Prof. Changhwan Shin

 Turn-On Transient
Again, consider a p+n diode (Qp >> Qn):
Dpn(x) i(t)

vA(t)
x
xn
dpn i t
For t > 0: =- <0
dx x = xn qAD p

Prof. Changhwan Shin

 dQ p Qp Qp
=i- = IF - for t ³ 0 +
dt τp τp
• By separation of variables and integration, we have
(
Q p (t ) = I F τ p 1 - e
-t / τ p
)
• If we assume that the build-up of stored charge
occurs quasi-statically so that
Q p (t ) = I diffusion τ p = I (e
0
qv A / kT
)
-1 τ p

kT é I F -t / τ p ù
then v A (t ) = ln ê1 +
q ë I0
1- e (ú )
û
Prof. Changhwan Shin
• If tp is large, then the time required to turn on
the diode is approximately DQ/IF
where DQ = DQ p + DQ j

Prof. Changhwan Shin

 Summary of Important Concepts
• Under forward bias, minority carriers are injected
into the quasi-neutral regions of the diode
• Current flowing across junction is comprised of hole
and electron components

• In order for one of these components to be dominant,

the junction must be asymmetrically doped

Prof. Changhwan Shin

 Summary of Important Concepts (cont.)
• The ideal diode equation stipulates the relationship
between JN(-xp) and JP(xn)

Ø If holes are forced to flow across a forward-biased

junction, then electrons must also be injected across
the junction
Prof. Changhwan Shin
 Summary of Important Concepts (cont.)
• Under reverse bias, minority carriers are collected
into the quasi-neutral regions of the diode
• Minority carriers within a diffusion length of the
depletion region will diffuse into the depletion region
and then be swept across the junction by the electric
field.

® Current flowing in a reverse-biased diode depends

on the rate at which minority carriers are supplied in
the quasi-neutral regions

Prof. Changhwan Shin

 Varactor Diodes
• Voltage-controlled capacitor
– Used in oscillators and detectors
(e.g. FM demodulation circuits in your radios)
– Response changes by tailoring doping profile:

-n
C j µ Vr
1
for n= m+2
Vr >> Vbi

Prof. Changhwan Shin

 Tunnel Diodes
• Degenerately doped
such that EFp < Ev and
EFn > Ec

• Can achieve negative

differential resistance
– useful in high-speed
circuits and perhaps
static memories

Prof. Changhwan Shin

Tunnel Diodes (cont.)

Prof. Changhwan Shin

 Optoelectronic Diodes

qVA kT
I = I 0 (e - 1) - I op
I op = qAgop ( LP + W + LN ) ~ qAgop ( LP + LN )

Prof. Changhwan Shin

 é L + L
ù
Voc = VA I =0
= kTq ln ê æ L p ö p æ nL ö g op + 1ú
êë çè t p ÷ø pn +çè n t n ÷ø n p úû

Prof. Changhwan Shin

 p-i-n Photodiodes
• W @ Wi-region, so most carriers are generated in
the depletion region
à faster response time (~10 GHz operation)

• Operate near avalanche to amplify signal

Prof. Changhwan Shin

 Light Emitting Diodes (LEDs)

•LEDs are
typically made of
compound
semiconductors
(direct bandgap)

Prof. Changhwan Shin

 Organic LEDs
• Some organic materials
exhibit semiconducting
properties
– OLEDs are attractive for
low-cost, high-quality flat-
panel displays

Prof. Changhwan Shin