THANTHAI PERIYAR GOVERNMENT INSTITUTE OF TECHNOLOGY

DEPARTMENT OF ELECTRONICS & COMMUNICATION

ENGINEERING
CONTINUOUS ASSESSMENT TEST – I
2020-21 EVEN SEMESTER

EC8252 ELECTRONIC DEVICES

YEAR : I SEM : II
DATE : 21.05.2021 DURATION : 2 Hours
FACULTY NAME : M.JANANI MAX MARKS : 50

Answer all the questions Part A (5*2=10)

S.No Questions CO PO PSO

1 Differentiate Drift current & Diffusion current. 1 2,3 2
2 Define Barrier Potential. 1 1 1
In a BJT biased in the active mode, the base current is 6uA, and the collector
3 2 1 1
current is 510uA. Find the value of alpha.
An n type silicon sample, having electron mobility μ n twice the hole mobility μp
is subjected to a steady illumination such that the electron concentration doubles
4 1 2,3 2
from its thermal equilibrium value. As a result, the conductivity of the sample
increases by a factor of
5 Why BJT is called Current controlled device? 2 1 1

Answer all the questions Part B (5*8=40)

S.No Questions CO PO PSO

Explain the construction of PN junction diode & also demonstrate the working
1 mechanism of PN junction diode in forward and reverse bias condition. Draw V I 1 1,2 1,2
characteristics of diode.
a) Enumerate the switching characteristics of PN junction diode with suitable
circuit & waveforms.
2 1 1 1
b) The reverse saturation current of a silicon PN diode is 10 µA. Calculate the
diode current for the forward bias voltage of 0.6 V at room temperature.
3 Derive Transition &diffusion capacitance of PN diode. 1 1 1
Explain the operation of NPN transistor and discuss the three different
4 2 2,3,4 2
configurations of BJT with suitable diagrams& equations.
a) The donor and accepter impurities in an abrupt junction silicon diode are 1 x
10^16 cm-3 and 5 x 10^18cm-3,respectively. Assume that the intrinsic carrier
concentration in silicon ni = 1.5 x 10^10 cm-3 at 300 K, kT/𝑞 = 26 mV and the
5 permittivity of silicon 𝜖si = 1.04 × 10^−12F/cm. The built-in potential and the 1
depletion width of the diode under thermal equilibrium conditions, respectively,
are
b) Discuss Breakdown mechanism in PN diode