THANTHAI PERIYAR GOVERNMENT INSTITUTE OF TECHNOLOGY,

DEPARTMENT OF ELECTRONICS & COMMUNICATION

ENGINEERING

COURSE PLAN

Sub. Code : EC8252 YEAR/SEM : I/II

Sub. Name: Electronic Devices Batch: A, B
Staff Name: Mrs. M.Janani AY: 2020-21

UNIT I SEMICONDUCTOR DIODE 9

PN junction diode, Current equations, Energy Band diagram, Diffusion and drift current
densities, forward and reverse bias characteristics, Transition and Diffusion Capacitances,
Switching Characteristics, Breakdown in PN Junction Diodes.

Course Outcome 1 : Describe the principle and characteristics of semiconductor diode

Sl. Mapped
Topics to be covered Ref
No. PO

1 PN Junction Diode R2, Pg – 92 to 98

2 Current Equation, Energy band diagram R2, Pg – 98 - 107

3 Diffusion and Drift Current Densities R2, Pg – 84 - 86

4 Forward and Reverse Bias Characteristics R2, Pg – 96 - 98 PO 1,2,3,

12
5 Transition and Diffusion Capacitances R2, Pg – 107 - 110
6 Switching Characteristics R2, Pg – 112 - 114

7 Break down in PN Junction Diodes R2, Pg – 114 - 116

8 Review & Problem Discussion R2, Chapter 4

 THANTHAI PERIYAR GOVERNMENT INSTITUTE OF TECHNOLOGY,
DEPARTMENT OF ELECTRONICS & COMMUNICATION
ENGINEERING

COURSE PLAN

UNIT II BIPOLAR JUNCTION TRANSISTORS 9

NPN -PNP -Operations-Early effect-Current equations – Input and Output characteristics of

CE, CB, CC - Hybrid -π model - h-parameter model, Ebers Moll Model- Gummel Poon-
model, Multi Emitter Transistor.

Course Outcome 2 : Analyze various transistor configurations

Mapped
Sl. No. Topics to be covered Ref
PO
R2,
1 NPN-PNP Operations, Current Equation
Pg – 112 - 115
Input and Output Characteristics of CB, Early R1,
2
Effect Pg – 115 - 120
R1,
3 Input and Output Characteristics of CE
Pg – 120 - 127
R1,
4 Input and Output Characteristics of CC
Pg – 127 - 130
R2*,
5 Hybrid π Model PO
Pg – 91 - 95
R2, 1,2,3,4,12
6 h-parameter Model
Pg – 157 - 163
R2,
7 Ebers Moll Model
Pg – 172 - 174
R2*,
8 Gummel Poon Model
Pg – 95 - 98
R2*,
9 Multi Emitter Transistor
Pg – 98 - 99
10 Review & Problem Discussion R1, Chapter 3
 THANTHAI PERIYAR GOVERNMENT INSTITUTE OF TECHNOLOGY,
DEPARTMENT OF ELECTRONICS & COMMUNICATION
ENGINEERING

COURSE PLAN

UNIT III FIELD EFFECT TRANSISTORS 9

JFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its
significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation,
DMOSFET, E-MOSFET- Characteristics – Comparison of MOSFET with JFET.

Course Outcome 3: Construct small signal modeling of a transistor

Sl. Mapped
Topics to be covered Ref
No. PO
R1,
1 JFETs
Pg – 211 - 218
Drain and Transfer Characteristics, R1,
2
Current Equation Pg – 219 - 221
R1,
3 Pinch off Voltage and its significance
Pg – 214 - 215

MOSFET-Characteristics, Threshold voltage, R1, PO 1,2,3,4,

4 5, 12
Channel Length Modulation, D-MOSFET Pg – 228 - 233
R1,
5 E-MOSFET Characteristics
Pg – 234 - 242
R2,
6 Comparison of MOSFET with JFET
Pg – 210

7 Review & Problem Discussion R1, Chapter 5

 THANTHAI PERIYAR GOVERNMENT INSTITUTE OF TECHNOLOGY,
DEPARTMENT OF ELECTRONICS & COMMUNICATION
ENGINEERING

COURSE PLAN

UNIT IV SPECIAL SEMICONDUCTOR DEVICES 9

Metal-Semiconductor Junction- MESFET, FINFET, PINFET, CNTFET, DUAL GATE

MOSFET, Schottky barrier diode-Zener diode-Varactor diode –Tunnel diode- Gallium
Arsenide device, LASER diode, LDR.

Course Outcome 4 : Analyze the behaviour of special semiconductor devices.

Sl. Mapped
Topics to be covered Ref
No. PO
R2*,
1 Metal Semiconductor Junction
Pg – 136 - 141
R2*,
2 MESFET
Pg – 146 - 147
R2*,
3 FINFET, PINFET, CNTFET
Pg – 130 - 133
R2*,
4 Dual Gate MOSFET
Pg – 127 - 130
R1,
5 Schottky Barrier Diode
Pg – 810 - 814
R1, PO
6 Zener Diode
Pg – 87 - 94 1,2,3,4,5,6
R1, , 12
7 Varactor Diode
Pg – 814 - 818
R2*,
8 Tunnel Diode
Pg – 160 - 163
R2*,
9 Gallium Arsenide Devices
Pg – 141 - 146
R2*,
10 LASER Diode
Pg – 163 - 164
R2*,
11 LDR
Pg – 164 - 166
12 Review & Problem Discussion R1,R2
 THANTHAI PERIYAR GOVERNMENT INSTITUTE OF TECHNOLOGY,
DEPARTMENT OF ELECTRONICS & COMMUNICATION
ENGINEERING

COURSE PLAN

UNIT V POWER DEVICES AND DISPLAY DEVICES 9

UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo
transistor, Opto Coupler, Solar cell, CCD.

Course Outcome 5: Operate the basic electronic devices such as Power control devices,
LED, LCD and other Opto-electronic devices

Mapped
Topics to be covered Ref
Sl. No. PO
1 UJT R1, Pg – 861 - 871

2 SCR R1, Pg – 842 - 852

3 DIAC,TRIAC R1, Pg – 858 - 861

4 Power BJT, Power MOSFET R2*, Pg – 183 - 188

R2*, Pg – 188
5 DMOS,VMOS
R1, Pg – 243 - 244
PO
6 LED –Light Emitting Diode R1, Pg – 871 - 872 1,2,3,4,5,6,
7 LCD – Liquid Crystal Display R1, Pg – 831-833 12

8 Photo Transistor R1, Pg – 871 - 872

9 Opto Coupler R2*, Pg – 196 - 197

10 Solar Cell R1, Pg – 833 -837

11 CCD – Charge Coupled Devices R2*, Pg – 198 - 200

12 Review & Problem Discussion R1,R2

REFERENCES:
1. Robert Boylestad and Louis Nashelsky, “Electron Devices and Circuit Theory”
Pearson Prentice Hall, 10th edition, July 2008. (7th edition)
2. Salivahanan. S, Suresh Kumar. N, Vallavaraj.A, “Electronic Devices and circuits”,
Third Edition, Tata McGraw- Hill, 2008. (second edition)
* Salivahanan. , “Electronic Devices”, Third Reprint, Tata McGraw- Hill, 2015.