BJT and MOSFET basics, biasing and

small-signal models

Review of EE 212 Lecture Notes (Prof. Dr. Cengiz Beşikci)

Bipolar Junction Transistors (BJTs)
 BJTs- Circuit Symbols

Collector Collector
-
+ n VBC p
VCB IC IC
Base
- Base +
+ -
IB p VCE=VCB+VBE IB n VEC=VEB+VBC
- +
+ -
VBE IE VEB IE
- +
n Emitter p Emitter

npn BJT I E  IC  I B pnp BJT

IC   I E
with BE junction forward- and
IC   I B BC junction reverse-biased

I E  (   1) I B

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 BJTs- Operation
Configurations
Output
Output

Input +
Input VCB
-

Common Base
Common Emitter

Input
Output

Common Collector

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 BJTs-Operation Modes

BE Junction BC Junction Mode npn pnp

Forward Forward Saturation VBE>0 VEB>0
VBC>0 VCB>0

Forward Reverse Forward Active VBE>0 VEB>0

VBC<0 VCB<0

Reverse Forward Reverse Active VBE<0 VEB<0

VBC>0 VCB>0

Reverse Reverse Cut off VBE<0 VEB<0

VBC<0 VCB<0

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 BJTs- Operation

Common Base IC-VCB characteristics of the npn BJT.

IC
IC=IE
+
VCB
-
IE 

0 VCB IC

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 BJTs- Characteristics Ref. 4: 5.7

IC-VCE (Common Emitter) Characteristics of the npn BJT

100 A
0.78 V
VCB= 0V VBE IB 80 A
0.77 V

Saturation
Forward Active 60 A

Saturation
Forward Active
0.76 V
40 A
0.75 V
0.74 V 20 A
0.73 V
Cut-off (IB=0)
0.72 V

Deep Saturation
VCE  VCB  VBE

VBE

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 BJTs- Characteristics Ref. 4: 5.7

F=100, R=10

IC

Both Junctions
Forward Biased

VCE=VCB+VBE=VBE-VBC
Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 BJTs-Secondary Effects Ref. 4: 5.10.1, 5.10.2

Base Width Modulation

So far we have considered the BJT as an ideal current source in the forward active
region assuming that the collector current does not change with VCE. On the other hand,
IC-VCE characteristics of a real BJT are as shown below due to the change in the
base width with the reverse bias voltage across the B-C junction. This known as the base
width modulation effect or Early effect. qVBE

IC2
IC  I S e kT
in F.A. region
npn BJT IC1 I C1 IC 2

VA  VCE1 VA  VCE 2
1
 dI  zero VCB IS
ro   C  VA VA+VCB
 dVCE 
I C 2 VA  VCB V
  I S  I SO (1  CB )
I C1 VA VA
VA (Early Voltage) VCE1 VCE2
Ideal BJT
in the F.A.
IC + Ideal Real
IC I
mode + I current BJT +
VCE  rO
in the +
V source VCE 
F.A. V
- - mode - -
Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 BJTs-Biasing

Biasing: In order to use the BJT in a specific mode of operation, proper biasing
voltages must be applied to the device terminals. As an example, the device is used
in the forward active mode (as a controlled current source) for the amplification of ac
signals.

Biasing establishes the operating point of the transistor which determines the device
parameters governing the characteristics of the circuit such as the gain, input
resistance and the output voltage swing of an amplifier.

Therefore, the biasing circuit must be carefully designed to achieve the optimum circuit
performance. VCC

R1 RC
An example circuit biasing the BJT in
the F. A. region using a DC power
supply (VCC) and resistors.
+
VBE
-

R2 RE

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 BJTs-Biasing Ref. 3: 5.5.1

BJT operates in the F.A. region, if RC is selected properly

to yield VC > VB.
VCC VCC

R1 RC RC
R1R2
Voltage divider (with VC RBB  IC
VCC) establishes the R1  R2 +
VB p n VCE
BE junction forward +
+ RBB -
biasing voltage. VBE
-
n = VBB + IB
VBE
-
- R2 IE
VBB  VCC
R2 R1  R2

VBB  RBB I B  VBE

V  VBE
I B  BB , IC = I B , I E =( +1)I B ,
A single DC power supply is sufficient to RBB
forward bias the BE junction and reverse VCE =VCC -IC R C , Q-point: (IC , VCE )
bias the BC junction at the same time.
IB is dependent on VBE, IC is dependent on   this is not a good design since it does
not provide Q-point (bias) stability. As an example, if the BJT is replaced with another
one with a different , a different Q-point is measured or the change in the temperature
(changing the BJT characteristics) results in a shift of the Q-point.
Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 BJTs-Biasing Ref. 3: 5.5.1

Let’s add a resistor (RE) to the emitter.

R2 VCC
VCC VBB  VCC
R1  R2
RC
R1 RC R1R2
RBB  IC
R1  R2
+
VCE
RBB + -
+
VBE = VBB +
IB
VBE
-
- - IE
RE
R2 RE

VBB  RBB I B  VBE  RE I E  RBB I B  VBE  RE (   1) I B

VBB  VBE
IB  , IC = I B , I E =( +1)I B , VCE =VCC -IC R C -I E R E
RBB  (   1) RE
Assume large  IE and IC are
Q-point: (IC , VCE )
VBB V stabilized!
if ( +1)R E  RBB and VBB  VBE , I B  , IC  I E   I B  BB
(   1) RE RE
Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 BJTs-Biasing

Q: How do I find the Q-point, if the BJT I-V characteristics are provided?
S:

1.88
IB
IC (mA)

Q-Point
1 IB= 10 A

Load Line

2 4 6 8 10 12 14 16
4.7

VCE =VCC -IC R C -I E R E  VCC -IC (R C +R E ) =10 V-IC x5.33K 

13
Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 BJTs-Biasing with a Current Source Ref. 3

VCC
Current I forced through the emitter develops a forward biasing
RC voltage across the BE junction.

The BJT operates in the F.A. Region (Is there any other possible
mode of operation in this configuration?)

+
VBE Main Advantage:
RB -
I Stable emitter and collector currents with the freedom of
selecting RB large (high input resistance).

-VEE

14
Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
Metal Oxide
Field Effect Transistors (MOSFETs)
 MOSFETs – Circuit Symbols Ref. 5:4.4

D D D

G G G
B B

S S S
n-channel enhancement p-channel enhancement n-channel enhancement (VSB=0)
D D D

G G G
B B

S S S
p-channel enhancement (VSB=0) p-channel depletion n-channel depletion
D D
G G
p-channel depletion (VSB=0) n-channel depletion (VSB=0)

S S
Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 MOSFETs – Current Expressions
n-channel MOSFET
W V
I D  Cox'' n (VGS  VT  DS )VDS in linear region, VGS >VT , VGD >VT (VGS -VDS >VT )
L 2
1 Cox '' nW
ID  (VGS  VT )2 in saturation region, VGS >VT , VGD <VT (VGS -VDS <VT )
2 L
I D  0 in cut off, VGS <VT

W
Define K n  nCox'' (transconductance parameter)
L
V
I D  K n (VGS  VT  DS )VDS in linear region, VGS >VT , VGD >VT (VGS -VDS >VT )
2
1
I D  K n (VGS  VT ) 2 in saturation region, VGS >VT , VGD <VT (VGS -VDS <VT )
2
I D  0 in cut off, VGS <VT

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 MOSFETs – Transfer Characteristic Ref. 5:4.2.9

Transfer Characteristic-Saturation Region

MOSFET Parameters:
C’’ox=3.5x10-7 F/cm2
VT =0.25 V
µnCoxW/L=3.5 mA/V

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 MOSFETs –Channel Length Modulation Effect Ref. 4:4.2.3

The drain current of a real MOSFET is not constant (increases with VDS) in the
saturation region. This is due to the movement of the pinch off point toward the source
end shortening the channel. As discussed before, the channel potential is constant at
V(x)=VG-VT (if VG is kept constant) at the pinch off point. A reduction of L in the
channel length results in a proportional decrease in the channel resistance
(R/R = L/L).
L 1 L R L 1 L
R  , I D  I Dsat ( )  I Dsat ( )  I Dsat ( )  I Dsat (1  )
wt  wt R  R L  L 1  L / L L
𝐼𝐷𝑠𝑎𝑡 = (𝑉𝐺 −𝑉𝑇 )Τ𝑅 for L  L
𝐼𝐷 = (𝑉𝐺 −𝑉𝑇 )Τ(𝑅 − 𝑅) This effect is modeled using a parameter
called channel length modulation parameter, .
VGVT
1 Cox nW
VD ID  (VG  VT ) 2 (1  VDS ),
2 L
1 L VGS4
L  ID
VGS3
VDS L VGS2
VGS1
L 1
 dI 
ro   D 
 dVDS 
1/ VDS
 MOSFETs – Depletion Mode Ref. 5:4.2.9

A physically implanted n-channel exists in the depletion type MOSFET. Since an

n-channel is already present, the device conducts current even when VGS=0 V. In order
to turn the drain current off, a sufficiently large negative bias voltage must be applied
to the gate. This bias voltage is defined as the threshold voltage of the depletion type
MOSFET.
n-channel depletion mode MOSFET
G
S D
Metal
Oxide
n-channel n+
n+

p-type Substrate

B
Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 MOSFETs – Depletion Mode Ref. 5:4.2.9

ID VT=-2 V
VGS= 2 V
VGS= 1 V
Transfer Characteristics-Saturation Region VGS=0 V
depletion mode VGS= -1 V
VT= -0.25 V

enhancement mode
VT=0.25 V
VDS
0
VGS< -2 V (cut off)

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 MOSFETs – p-channel Ref. 5:4.3

p-channel MOSFET (PMOS) is constructed on an n-type substrate. A p-channel (hole

inversion layer is formed between the p+ drain and source regions by the application
of a negative gate voltage with a sufficiently large magnitude.

p-channel enhancement mode MOSFET

G
D VDS<0 (VS>VD)
S
Metal VT negative
Oxide
p+ p+
VGS<VT to have the inversion
layer at the source end
VB>VS, VD
n-type Substrate

B
Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 MOSFETs – p-channel Ref. 5:4.3

VG G VD VDS<0 (VS>VD)
IS VS ID
S D
Metal VT =-2 V negative
Oxide
p+ p+ ISD

VGS= - 7 V
n-type Substrate VGS= - 6 V
VGS= - 5 V
B
VGS= - 4 V

VSD
0
VGS > - 2 V, cut off

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 MOSFETs – Current Expressions Ref. 5:4.3

p-channel enhancement type MOSFET

VDS<0 (VS>VD) VT negative
W
Define K p   p Cox'' (transconductance parameter)
L
_________________________________________________________
VSD
I SD  K p (VSG  VT  )VSD
2
in linear region, VGS negative and VGS >VT , VGD negative and VGD >VT
_________________________________________________________
1
I SD  K p (VSG  VT ) 2 (1+ VSD )
2
in saturation region, VGS negative and VGS >VT , VGD > VT
__________________________________________________________
I SD  0 in cut off, VGS  VT

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 MOSFETs-Biasing

Biasing: In order to use the MOSFET in a specific mode of operation, proper biasing
voltages must be applied to the device terminals. As an example, the device is used
in the saturation mode (as a controlled current source) for the amplification of ac
signals.

Biasing establishes the operating point of the transistor which determines the device
parameters governing the characteristics of the circuit such as the gain and the output
voltage swing of an amplifier.

Therefore, the biasing circuit must be carefully designed to achieve the optimum circuit
performance. VDD

An example circuit biasing the MOSFET in the saturation

R1 RC
region using a DC power supply (VDD) and resistors.

R2 RE

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 MOSFETs-Biasing Ref. 4:4.3, Ref. 5: 4.8, 4.9

MOSFET operates in the saturation region if VGS>VT and VGD<VT.

VDD VDD

R1 RD RD
R1R2
Voltage divider (with RG  ID
VDD) establishes the R1  R2
+
gate biasing voltage. VDS
RG +
- = VGG + IG=0 VGS-
-

- - IS=ID
R2 RS R2 RS
VGG  VDD
R1  R2

Kn
VGG  VGS  I D RS . Assume sat. region operation, I D = (VGS  VT ) 2
2
Kn
VGG  VGS  RS (VGS  VT )2 (ignore channel length modulation)
2
Solve the above equation to find VGS (choose the solution that makes sense),
Kn
Find ID from ID = (VGS  VT )2 and check to see if VGD =VGS -VDS <VT (verify sat. region assumption).
2
VDS =VDD -I D (R D +R S ) , Q-point: (I D , VDS )

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 MOSFETs-Biasing
Q . The threshold voltage and transconductance coefficient of the n-channel
enhancement mode MOSFET in the following circuit are VT=1 V and Kn= 6 mA/V2 (=0).
Find the Q-point of the MOSFET.

S:

430 K K
VGG  10  4.34V  VGS  I D 20 K , I D  n (VGS  1)2  3x103 (VGS  1)2
990 K 2
4.34  VGS  2 x104 x3x103 (VGS  1)2
VGS  1.228V , 0.755V . 0.755V  VT  VGS  1.228V
I D  1.56 x104 A, VDS  10  I D (20 K   20 K )  3.76V
VGD  VGS  VDS  2.53V  VT  saturation assumption is correct
Q-point: (1.56x10-4 A, 3.76V)
Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
Small Signal Modeling and
Introduction to Transistor Amplifiers
 Small Signal Modeling

lowercase

va purely ac signal
lowercase
CAPITAL

VA purely dc signal

CAPITAL
lowercase

vA AC+DC signal
CAPITAL

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to BJT Amplifiers Ref. 4: 5.6

If an ac signal is applied to the base of an npn BJT biased in the forward active region,
this signal introduces an ac component to the base-emitter junction voltage of the BJT.
As result, the collector current in the circuit includes an ac component since it depends
on the base emitter voltage. VBE

Remember that I C  I S e T
5V V
in the forward active region.
2 K
VBE  vbe VBE vbe VBE
vbe
v i  IS e
OUT C
VT
 IS e eVT VT
 IS e VT
(1  )
VT
vCE if vbe << VT
VBE VBE
vbe (ex  1+x for small x)
vBE  IS e VT
 IS e VT

Vbe VT
+ ic
VBE 0.7 V
- IC
DC + ac
DC + ac
vCE  vOUT  VCC  iC RC  VCC  ( I C  ic ) RC  VCC  I C RC  ic RC
Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to BJT Amplifiers Ref. 4: 5.6

For small amplitude be: v DC + ac

vOUT  VCC  IC RC  ic RC
5V

2 K
vbe  ac input signal
vce=-i R  ac output signal
c C

v OUT VBE
vbe IC
vce  ic RC   I S e VT
RC   RC vbe 180o
vCE VT VT phase
vBE vout IC
difference
Vbe AV (voltage gain)    RC   g m RC
vbe VT
+
VBE 0.7 V
- IC
gm  Transconductance of the BJT
VT
Note that ic  g m vbe
Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to BJT Amplifiers Ref. 4: 5.6

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to BJT Amplifiers Ref. 4: 5.6

Q: Does the amplifier in the above circuit amplify linearly under the given condition?
S: Yes, it does since,
IC
vout  vce   RC vbe
VT
constant (set by DC biasing conditions)
output (vout) depends linearly on input (vbe)
Q: What is the required condition for linear amplification?
S: Remember that we have assumed small amplitude be so that v
VBE  vbe VBE vbe VBE VBE VBE
vbe vbe
iC  I S e VT
 ISe e
VT VT
 ISe VT
(1  )  I S e VT
 ISe VT

VT VT

ic linearly depends on vbe. IC ic

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to BJT Amplifiers Ref. 4: 5.6

Q: How small vbe should be for linear amplification?

S: Small enough to have
 vbe 1 vbe 2 
vbe
vbe
e  1   ( )  ....  1 
VT

 VT 2 VT  VT
vbe 1 vbe 2
 ( )  vbe  2VT
VT 2 VT
This is the small signal condition for amplification with BJTs.

Q: What happens if this condition is not satisfied?

S: Nonlinear amplification  Distortion !

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to BJT Amplifiers Ref. 4: 5.6

Q: How do I find the small signal ac characteristics (such as ac voltage

gain) of a BJT amplifier without going through (tedious) graphical analysis?
S: Similar to what we have done for the diode, you need to replace the BJT
with a small signal ac equivalent circuit. Now let’s construct this equivalent
circuit. So far we found that
IC
ic  g m vbe  vbe small signal resistance
VT of the forward biased base-emitter
junction diode
Collector
ib ic
ic B + + C
Base -
ib
+
-
Vce  Vbe=v r
-
ic=gmv=ib
+ ie Vce
Vbe E
-
Emitter ie=(+1)ib -

The above equivalent circuit is called the Hyrid- Small Signal Equivalent Circuit

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to BJT Amplifiers Ref. 4: 5.6

Collector ib ic
B
ic + + C
Base -
ib +
Vce  Vbe=v r
-
ic=gmv=ib
- Vce
+
Vbe -
ie ie=(+1)ib E
Emitter
-

vbe v  v   VT
r      
ib ic /  g m v g m I C / VT I B
IC
gm 
VT
Small signal model parameters depend on the DC biasing conditions!

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to BJT Amplifiers Ref. 4: 5.6
Q: Find the small signal voltage gain of the following circuit.
5V S: Since we are interested in the ac voltage gain,
we start by drawing the ac equivalent circuit.
2 K Replace
Ideal DC Power Supply  Short Circuit
C vo Ideal DC Current Supply  Open Circuit
Large Enough Capacitor  Short Circuit
vCE RL Large Enough Inductor  Open Circuit
vBE
Vin
+
VBE 0.7 V ib ic AV (voltage gain) 
vo
- vin
ce RL
be
ie=(+1)ib

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to BJT Amplifiers Ref. 4: 5.6

After drawing the ac equivalent circuit, the BJT is replaced with the small
signal equivalent circuit.

ib ic
ic
ib
ce
RL  +
V r
ic=gmv=ib
RC//RL
be
-
ie=(+1)ib
ie=(+1)ib
vo  g m v ( RC / / RL )
AV     g m ( RC / / RL )
vin v

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to BJT Amplifiers Ref. 4: 5.6

Now let’s find the small signal input and output resistances of the circuit.

Rout Rin ic Rout

Rin ib
ic
ib
ce
RL  V
+
r
ic=gmv=ib
RC RL
be -
ie=(+1)ib
ie=(+1)ib
vin v
Rin    r , Rout  RC
ib ib
CHECK YOURSELF-POINT 
Q: How is the input resistance affected by the Q-point of the BJT?

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to BJT Amplifiers Ref. 4: 5.6
So far we have modeled the BJT (in the F.A. region) as an ideal controlled current
source. However, we know from an earlier discussion that the collector current depends
on the collector emitter voltage through the Early Effect which can be included in the
small signal equivalent circuit as follows.
ib ic
B + gmv=ib + C
V r ro
-
Vce
ie=(+1)ib E
-

IC
1
npn BJT  dI C  VA  VCE VA
ro     
 CE 
dV I C IC

VA (Early Voltage) VCE

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to BJT Amplifiers Ref. 4: 5.6

Q: Find the resistance seen from the emitter of a BJT with the base grounded.
S:
ib
+ ic=gmvbe=ib
r RC
Vbe
- Rin
ie=(+1)ib ix
+
Rin Vx
-
vx vbe ib r r
Rin      re , Note that vx  vbe and ix  ie
ix ie (   1)ib (   1)
The resistance seen from the base with emitter grounded (r) is larger than this resistance
(re) by a factor of +1. Resistance Reflection Rule: multiply the resistance connected to
the emitter by +1 to reflect it to the base.

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to BJT Amplifiers Ref. 4: 5.6

Based on the above discussion, it should be clear that the following equivalent circuit
can be used as an alternative to the hybrid- model to represent the small signal
equivalent of the npn BJT.

C
ic
i=gmv

ib T-Equivalent Circuit
B ro
+ re
Vbe=v i
-
ie
E

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to BJT Amplifiers-Common Emitter Amplifier
Q: Find the voltage gain and the input and output resistances of the following amplifier.
=100 10 V
VCC
S: Start with DC analysis.
VBE=0.7 V Replace the capacitors by open
V
circuits.
CC
VA=200 V R1 RC 3 K VCC
100 K Rout R1 RC
Rin C2
1 K vout RC

+ + RL 33.3 K


RS C1 VBE 3 K
vs - +
VCE
+
VBE
+ -
RE RBB -
-
R2 C3 VBB + VBE
-
50 K 2.33 K R2 3.33 VRE
-
RE

C1, C2: coupling capacitors

(input source and load can be coupled
without disturbing the Q-point.) VBB  VBE 3.33  0.7
IB    10  A
C3: bypass capacitor (increases the gain RBB  (   1) RE 33.3  101x 2.33
of the amplifier by removing RE from the IC = I B =1 mA, VCE =VCC -IC R C -I E R E  4.7 V
ac equivalent circuit).
Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to BJT Amplifiers-Common Emitter Amplifier

Draw the AC equivalent circuit. Replace the capacitors and dc voltage sources by short
circuit.

+ 
-
AC equivalent circuit
vout
1 K  Rs
RC//RL
+
R1//R2
vs
-

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to BJT Amplifiers-Common Emitter Amplifier

Replace the BJT with the small signal equivalent circuit.

AC equivalent circuit
vout
Rs
RC//RL
+
vs R1//R2

- Small Signal equivalent circuit

Rs ib ic Rout

ic=gmv=ib vout
+ +
V r ro RC
vs R1//R2
RL
-
-
ie=(+1)ib
Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to BJT Amplifiers-Common Emitter Amplifier

Rout g  I C  1mA  38.5 mA / V

Rs vb ib ic m
VT 26mV
ic=gmv=ib vout VT  100
+ + r     2.6 K 
vs V r ro RC RL I B g m 38.5 x103
R1//R2 - VA 200V
- ro    200 K 
I C 1mA
Rin ie=(+1)ib 3K//3K=1.5K
ro  RC / / RL

vout vout vb  g m v ( RC / / RL / / ro ) Rin

AV   
vs vb vs v RS  Rin
R1 / / R2 / / r
  g m ( RC / / RL / / ro )  40
RS  R1 / / R2 / / r

Rin  R1 / / R2 / / r  2.4K , Rout  RC / / ro  RC  3K 

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to MOSFET Amplifiers Ref. 4: 4.6

If an ac signal is applied to the gate of an n-channel enhancement mode MOSFET

biased in the saturation region, this signal introduces an ac component to the gate-source
voltage of the MOSFET. As result, the drain current in the circuit includes an ac
component since it depends on the gate-source voltage.
Kn
Remember that iD  (vGS  VT )2 in the saturation region
Cox '' nW 2
where K n  .
L
Kn Kn
iD  I D  id  (vGS  VT ) 
2
(VGS  vgs  VT ) 2
2 2
Kn
 (VGS  VT )2  2(VGS  VT )vgs  vgs2 
2
if vgs2  2(VGS  VT )vgs or vgs  2(VGS  VT )
vgs Kn
iD  I D  id  (VGS  VT ) 2  K n (VGS  VT )vgs
VGS 2
DC + ac
Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to MOSFET Amplifiers Ref. 4: 4.6

id  K n (VGS  VT )vgs if vgs  2(VGS  VT )

ac drain current depends linearly on ac gate-source voltage  linear amplification.

This is the small signal condition for MOSFET.

As found in the preceeding chapter (and as obvious from the above result):

iD W 2I D
gm   Cox n (VGS  VT )  K n (VGS  VT ) 
''

vGS Q-point
L VGS  VT
CHECK YOURSELF-POINT

Q: Compare the small signal requirements for BJT and MOSFET. Which device
can handle larger amplitude ac input signals while providing linear amplification?

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to MOSFET Amplifiers Ref. 4: 4.6

Now, let’s construct the small signal equivalent circuit for the MOSFET operating
in the saturation region.

D ig=0 id


G G + + D
vgs id=gmvgs
-
S
vds
is=id S
-

2I D
g m  K n (VGS  VT ) 
VGS  VT

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to MOSFET Amplifiers Ref. 4: 4.6

In order to account for the channel length modulation effect the finite output resistance
should be added to the equivalent circuit.

D ig=0 id


G G + id=gmvgs + D
vgs ro
-
S
vds
is=id S
-
VGS4
VGS3
ID VGS2 1/   VDS 1
VGS1 ro  
 dI D 
1
ID  ID
ro   
 DS 
dV
1/ VDS

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to MOSFET Amplifiers Ref. 4: 4.6

CHECK YOURSELF-POINT

Q: Show that the following T-small signal model for the MOSFET is equivalent
to the above model.
D

gmvgs
ig=0 T-Equivalent Circuit
G ro
+ 1/gm
Vgs
-

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to MOSFET Amplifiers

CHECK YOURSELF-POINT

Q: Draw the small signal equivalent circuit for the p-channel MOSFET.

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to MOSFET Amplifiers-Common Source Amplifier
Q: Find the small signal voltage gain and the input and output resistances of the
following MOSFET amplifier.
S: Draw the DC equivalent circuit and carry
VT=1 V out the DC anlaysis.
Kn= 6 mA/V2
=0.02 V-1 RD
RG1 RD
Rout
vout RG1
Rin
RL

RG2
vs RG2
RS RS

Q-point: (1.56x10-4 A, 3.76V)

VGS=1.23V
Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes
 Introduction to MOSFET Amplifiers-Common Source Amplifier
Draw the ac equivalent circuit and replace the MOSFET with the small
signal equivalent circuit. 1
r   320 K 
o
ID
g m  K n (VGS  VT )  1.38 mA / V
 R G ig=0
in D
ic
Rout

+ gmvgs ro
Vgs RL
RG1//RG2-
RD

vo  g m vgs ( RD / / RL / / ro )
AV     g m ( RD / / RL / / ro )  9
vs vgs
Rin  RG1 / / RG 2  243K 
Rout  RD / / ro  RD  19 K 

Middle East Technical University, EE 212-Semiconductor Devices and Modeling, Lecture Notes