2SK2393

Silicon N-Channel MOS FET

Application

High voltage / High speed power switching

Features

• Low on-resistance, High breakdown voltage

• High speed switching
• Low Drive Current
• No Secondary Breakdown
• Suitable for Switching regulator, Motor Control

Outline

TO-3PL

G 1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
2SK2393

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Drain to source voltage VDSS 1500 V
Gate to source voltage VGSS ±20 V
Drain current ID 8 A
1
Drain peak current I D(pulse)* 20 A
Body to drain diode reverse drain current I DR 8 A
2
Channel dissipation Pch* 200 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown V(BR)DSS 1500 — — V I D = 10 mA, VGS = 0*1
voltage
Gate to source leak current I GSS — — ±1 µA VGS = ±20 V, VDS = 0
Zero gate voltage drain current I DSS — — 500 µA VDS = 1200 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V I D = 1 mA, VDS = 10 V
Static drain to source on state RDS(on) — 1.9 2.8 Ω ID = 4 A
resistance VGS = 15 V*1
Forward transfer admittance |yfs| 1.8 3.0 — S ID = 4 A
VDS = 20 V*1
Input capacitance Ciss — 4370 — pF VDS = 10 V
Output capacitance Coss — 560 — pF VGS = 0
Reverse transfer capacitance Crss — 200 — pF f = 1 MHz
Turn-on delay time t d(on) — 75 — ns ID = 4 A
Rise time tr — 180 — ns VGS = 10 V
Turn-off delay time t d(off) — 260 — ns RL = 7.5 Ω
Fall time tf — 125 — ns
Body to drain diode forward VDF — 0.9 — V I F = 8 A, VGS = 0
voltage
Body to drain diode reverse t rr — 6.5 — µs I F = 8 A, VGS = 0,
recovery time diF / dt = 100 A / µs
Note 1. Pulse Test

2
 2SK2393

Power vs. Temperature Derating Maximum Safe Operation Area

400 100
Pch (W)

30

I D (A)
300 10
10 µs
10 0µ
s
1m
Channel Dissipation

PW

Drain Current
200 DC =1 s
3 Op 0m
era s(
Operation in tio 1s
n( ho
1 this area is Tc t)
limited by R DS(on) =2
100 5°
C)
0.3

0.1 Ta = 25 °C
0 50 100 150 200 20 50 100 200 500 1000 2000
Case Temperature Tc (°C) Drain to Source Voltage V DS (V)

Typical Output Characteristics Typical Transfer Characteristics

10 5
Pulse Test
V DS = 10 V
15 V 10 V Pulse Test
8
I D (A)

4
(A)

8V
7V
ID

6
3
Drain Current

Drain Current

4
2
6V Tc = 75°C 25°C
2 –25°C
VGS = 5 V 1

0 10 20 30 40 50 0 2 4 6 8 10
Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V)

3
2SK2393

Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance
Gate to Source Voltage vs. Drain Current
20 20
V DS(on) (V)

Drain to Source On State Resistance

R DS(on) ( Ω )
Pulse Test Pulse Test
10
16
5
Drain to Source Voltage

12 VGS = 10 V
ID=5A 2
15 V
8
1

4 2A 0.5
1A
0.2
0 4 8 12 16 20 0.1 0.3 1 3 10 30 100
Gate to Source Voltage V GS (V) Drain Current I D (A)

Static Drain to Source on State Resistance Forward Transfer Admittance vs.

vs. Temperature Drain Current
10
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance

5
R DS(on) ( Ω)

Pulse Test ID=5A

5
2A
4 Tc = –25 °C
1A 2
3 25 °C
V GS = 15 V 1
75 °C
2 0.5

1 0.2 V DS = 20 V
Pulse Test
0.1
0
0.1 0.2 0.5 1 2 5 10
–40 0 40 80 120 160
Case Temperature Tc (°C) Drain Current I D (A)

4
 2SK2393

Body to Drain Diode Reverse Typical Capacitance vs.

Recovery Time Drain to Source Voltage
50 10000
Ciss
Reverse Recovery Time trr (µs)

3000

Capacitance C (pF)
20
1000
10
Coss
5 300
Crss
100
2

1 30 VGS = 0
di/dt = 100 A/µs
V GS = 0, Ta = 25°C f = 1 MHz
0.5 10
0.1 0.3 1 3 10 0 10 20 30 40 50
Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V)

Dynamic Input Characteristics Switching Characteristics

2000
1000 20 V GS = 10 V, V DD = 30 V
V GS (V)

ID=8A
V DS (V)

1000 PW = 5 µs, duty < 1 %

Switching Time t (ns)

800 16
V DD = 250 V 500
t d(off)
VDS 400 V
Gate to Source Voltage
Drain to Source Voltage

600 600 V VGS 12 tf

200

400 8 100 tr

50 t d(on)
200 V DD = 250 V 4
400 V
600 V
0 20
0 40 80 120 160 200 0.1 0.2 0.5 1 2 5 10
Gate Charge Qg (nc) Drain Current I D (A)

5
2SK2393

Reverse Drain Current vs.

Source to Drain Voltage
10
Pulse Test

Reverse Drain Current I DR (A)

10 V
8
5V

6
V GS = 0, –5 V

0 0.2 0.4 0.6 0.8 1.0

Source to Drain Voltage V SD (V)

Switching Time Test Circuit Waveform

Vin Monitor Vout

Monitor
90%
D.U.T.
RL
Vin 10%

Vin V DD Vout 10%

50Ω 10%
10 V = 30 V

90% 90%

td(on) tr td(off) tf

6
 Unit: mm

6.0 ± 0.2
20.0 ± 0.3 5.0 ± 0.2
φ3.3 ± 0.2

26.0 ± 0.3

1.4
20.0 ± 0.6
2.5 ± 0.3

3.0
2.2
1.2 +0.25
–0.1

5.45 ± 0.5 5.45 ± 0.5 0.6 +0.25

–0.1 2.8 ± 0.2

1.0

3.8
7.4 Hitachi Code TO-3PL
JEDEC —
EIAJ —
Weight (reference value) 9.9 g
Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http:semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor Hitachi Europe GmbH Hitachi Asia Pte. Ltd. Hitachi Asia (Hong Kong) Ltd.
(America) Inc. Electronic components Group 16 Collyer Quay #20-00 Group III (Electronic Components)
179 East Tasman Drive, Dornacher Stra§e 3 Hitachi Tower 7/F., North Tower, World Finance Centre,
San Jose,CA 95134 D-85622 Feldkirchen, Munich Singapore 049318 Harbour City, Canton Road, Tsim Sha Tsui,
Tel: <1> (408) 433-1990 Germany Tel: 535-2100 Kowloon, Hong Kong
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0 Fax: 535-1533 Tel: <852> (2) 735 9218
Fax: <49> (89) 9 29 30 00 Fax: <852> (2) 730 0281
Hitachi Europe Ltd. Hitachi Asia Ltd. Telex: 40815 HITEC HX
Electronic Components Group. Taipei Branch Office
Whitebrook Park 3F, Hung Kuo Building. No.167,
Lower Cookham Road Tun-Hwa North Road, Taipei (105)
Maidenhead Tel: <886> (2) 2718-3666
Berkshire SL6 8YA, United Kingdom Fax: <886> (2) 2718-8180
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.